STMicroelectronics RF2L36075CF2

Overview

RF2L36075CF2 from STMicroelectronics is a 75 W, 3.1–3.6 GHz internally matched LDMOS RF power transistor designed for S-Band radar and multicarrier WCDMA/PCS/DCS/LTE base station final-stage amplification. It operates at 28 V DC supply, delivers 12.5 dB small-signal gain and 45% drain efficiency at P1dB, and supports Class AB, B, or C operation with ±6 V gate-source voltage range.

For engineers reviewing the RF2L36075CF2 datasheet, RF2L36075CF2 pinout, RF2L36075CF2 application, or RF2L36075CF2 equivalent, key selection criteria include pulsed CW output power (75 W @ 3500 MHz), WCDMA ACPR performance (−48.4 dBc @ 34 dBm), thermal resistance (0.35 °C/W), ESD robustness (HBM Class 1B), and B2 package mechanical compatibility.

Technical Context

This LDMOS transistor integrates internal input matching to simplify PCB layout in 3.1–3.6 GHz S-Band systems. Its 0.35 °C/W junction-to-case thermal resistance enables high-power operation with passive heatsinking, while the −6 to +10 V gate-source voltage rating supports stable Class C biasing under large-signal swing.

Dynamic characterization confirms 12.5 dB power gain and 45% drain efficiency at 3500 MHz under 1 dB compression, with WCDMA ACPR of −48.4 dBc at 34 dBm average output. The device meets JEDEC HBM Class 1B and CDM Class C3 ESD standards, and complies with RoHS Directive 2002/95/EC.

Key Specifications

Pinout & Package

The RF2L36075CF2 uses the thermally optimized B2 package: a 12.7 mm × 9.78 mm × 20.57 mm overmolded ceramic/metal flange package with bottom-side source connection for low-inductance grounding and enhanced thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRFE6VP6750HR5 and QPD1025, RF2L36075CF2 offers lower system-level BOM cost via 28 V compatibility, simplified thermal design with 0.35 °C/W R_thJC, and proven reliability in telecom base station field deployments since 2020.

Availability

RF2L36075CF2 is available at Aetrix Electronics and suitable for S-Band radar transmitters, 3.5 GHz LTE TDD macro base stations, and multicarrier WCDMA infrastructure requiring stable component supply, traceable lot history, and long-lifecycle support.

Supply support for RF2L36075CF2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and RF solutions for industrial, automotive, and communications markets.

RF2L36075CF2 belongs to ST's high-power LDMOS RF transistor product line, engineered specifically for 3–4 GHz wireless infrastructure applications demanding high efficiency, ruggedness, and long-term reliability in outdoor base station environments.

FAQ

What is the recommended gate bias voltage for Class AB operation?

The datasheet specifies a quiescent gate voltage (V_GS(Q)) of 3 V at V_DS = 1 V and I_DS = 600 mA. For stable Class AB operation at 28 V drain supply, a fixed gate bias of +3.0 V ±0.1 V with active current sensing is recommended to maintain 600 mA I_DQ across temperature and unit variation.

Can RF2L36075CF2 operate safely at 32 V drain supply?

Yes - absolute maximum V_DD is rated at 32 V per Table 1. Typical pulsed CW performance data (Figure 2) confirms stable operation at 32 V with 12.5 dB gain and 47% efficiency at 3500 MHz, though thermal derating to ≤65 W output is advised to maintain T_J ≤ 200 °C under continuous duty.

Is external input matching required for 3.4 GHz operation?

No - the device features internal input matching optimized across 3.1–3.6 GHz. Measurement data (Table 4, Figure 1) shows <1.5:1 VSWR at 3.4 GHz with 50 Ω source impedance, eliminating discrete matching networks and reducing layout sensitivity to parasitic reactance.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum V_GS rating is −6 V to +10 V (Table 1). During fast turn-on/off transitions, gate ringing must be limited to this range using RC snubbers or ferrite beads; exceeding +10 V risks permanent oxide damage, while going below −6 V may cause threshold shift due to hot carrier injection.