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STMicroelectronics RF3L05150CB4
- Part No.:
- RF3L05150CB4
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- LBB
- Datasheet:
-
RF3L05150CB4.pdf
- Description:
- RF MOSFET LDMOS 28V LBB
- Quantity:
- Payment:
- Shipping:
Inventory:120
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Product details
Overview
RF3L05150CB4 from STMicroelectronics is a 150 W, 28/32 V LDMOS RF power transistor in LBB package, designed for HF-to-1 GHz wideband amplification in class AB/B/C operation. It delivers 23 dB gain and 60% drain efficiency at 520 MHz with 150 W output power under pulsed CW conditions (20 µs, 10% duty cycle), supporting modulation formats including AM, FM, and SSB in avionics and jammer systems.
For engineers reviewing the RF3L05150CB4 datasheet, RF3L05150CB4 pinout, RF3L05150CB4 application, or RF3L05150CB4 equivalent, key selection criteria include its 90 V VDS, -8 to +10 V VGS range, 0.4 °C/W RthJC, integrated HBM Class 2 ESD protection, and broadband operation from 30 MHz to 1000 MHz.
Technical Context
This LDMOS FET supports high-efficiency linear amplification across HF–UHF bands using dual-gate architecture (Gate A and Gate B) and dual-drain configuration (Drain A and Drain B) for balanced push-pull or parallel operation. Its large gate-source voltage swing (−8 V to +10 V) enables stable class C biasing while maintaining linearity under high peak-to-average ratio signals.
Thermal performance is optimized via copper-base LBB package with 0.4 °C/W junction-to-case resistance, enabling reliable 150 W RF output at TJ ≤ 200 °C. The device meets RoHS compliance (ECOPACK e4) and supports pulsed CW and continuous wave operation with VDD up to 36 V absolute maximum rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 90 V - Supports 28/32 V operation with 2.3× voltage headroom for transient suppression and VSWR tolerance up to 20:1. |
| POUT | 150 W at 520 MHz - Delivers full-rated RF power in HF avionics (118–140 MHz) and ground comms (136–174 MHz) with 1 dB compression point. |
| GPS | 23 dB - Enables single-stage amplification from driver-level input (≈1 W) to final 150 W output without intermediate stages. |
| ηD | 60 % - Reduces thermal load and DC supply current vs. lower-efficiency alternatives, critical for air-cooled or conduction-cooled enclosures. |
| RthJC | 0.4 °C/W - Allows direct mounting to heatsink with minimal thermal interface resistance; enables >100 W sustained CW dissipation at TC = 85 °C. |
| VGS(th) | 1.75–2.50 V - Ensures predictable turn-on behavior and compatibility with standard 3.3 V/5 V gate drivers in hybrid bias networks. |
| CISS | 70 pF at 28 V - Defines input matching network complexity; low enough for broadband 50 Ω design without excessive neutralization. |
Pinout & Package
LBB package is a thermally enhanced, flanged ceramic/metal RF power package with bottom-side source connection and isolated gate/drain terminals. Dimensions: 28.95 mm × 22.86 mm × 6.60 mm (L × W × H), with 5-pin terminal layout and copper base for direct heatsink mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 Drain A | RF output node (channel A) | Carries half of total RF current in push-pull configuration; requires symmetric layout and impedance-matched output trace. |
| 2 Drain B | RF output node (channel B) | Complements Drain A for differential or parallel operation; must be phase-matched within ±5° for balanced combining. |
| 3 Source (bottom side) | Common RF return path | Directly bonded to copper base; serves as primary thermal and RF ground; must be soldered to heatsink with low-inductance interface. |
| 4 Gate B | Control input (channel B) | Accepts bias and RF drive for channel B; requires separate gate resistor network to suppress oscillation and control rise/fall time. |
| 5 Gate A | Control input (channel A) | Independent gate control enables asymmetrical biasing or digital predistortion feedforward paths for IMD3 reduction. |
Key Features
| Feature | Design Value |
|---|---|
| High-efficiency wideband operation | 60% drain efficiency at 150 W, 520 MHz - reduces system-level cooling requirements and improves battery runtime in portable HF transceivers. |
| Integrated ESD protection | HBM Class 2 (≥2 kV), CDM Class C3 - eliminates need for external TVS diodes on gate lines, simplifying PCB layout and improving reliability in field-deployed radios. |
| Large VGS operating range | −8 V to +10 V - enables deep class C biasing for jammer applications while retaining safe gate oxide margin during RF overdrive events. |
| RoHS-compliant ECOPACK e4 | Lead-free, halogen-free, and compliant with EU Directive 2002/95/EC - satisfies environmental requirements for avionics and defense procurement. |
| Robust thermal design | RthJC = 0.4 °C/W and TJ(max) = 200 °C - supports operation in sealed enclosures up to 85 °C ambient without derating below 150 W. |
Applications
| Avionics Transmitter | HF Jammer System |
|---|---|
|
Use Scenario: 118–140 MHz VHF AM voice transmitter in airborne communication radios requiring 100+ W ERP with MIL-STD-461E EMC compliance. IC Role / Device Role / Timing Role: Final RF power stage delivering 150 W P1dB with 23 dB gain and 60% efficiency under pulsed AM modulation. Use Value: Dual-drain architecture enables balanced output combiner design that meets stringent spectral mask requirements (<−60 dBc adjacent channel) without external filtering. |
Use Scenario: Ground-based electronic warfare system covering 30–512 MHz with rapid frequency hopping and high peak-to-average power ratio signals. IC Role / Device Role / Timing Role: High-power broadband amplifier operating in class C with −8 V to +10 V gate swing for dynamic bias control per hop. Use Value: 20:1 VSWR tolerance ensures uninterrupted transmission during antenna mismatch events common in mobile jammer platforms. |
| Commercial Land Mobile Radio | ISM Band Instrumentation |
|
Use Scenario: 136–174 MHz trunked radio repeater requiring 150 W output with high linearity for P25 Phase II TDMA signals. IC Role / Device Role / Timing Role: Linear RF power amplifier biased in class AB, leveraging 23 dB gain and low IMD3 (−26 dBc at 520 MHz) for clean symbol constellation. Use Value: CISS = 70 pF and CRSS = 1.1 pF minimize Miller effect, enabling stable broadband matching without neutralization capacitors. |
Use Scenario: 13.56 MHz / 27.12 MHz / 40.68 MHz industrial heating generator requiring 150 W CW output with high reliability over 20,000-hour lifetime. IC Role / Device Role / Timing Role: Solid-state RF power stage replacing vacuum tubes, operating at 28 V with 60% efficiency and 0.4 °C/W thermal resistance. Use Value: Copper-base LBB package allows direct bolt-down to water-cooled heatsink, eliminating thermal interface material degradation over time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CGHV1F015S | 150 W GaN HEMT, 50 V VDD, 22 dB gain, 65% efficiency at 520 MHz; higher RthJC (0.55 °C/W); no integrated ESD protection. | Better efficiency but requires external ESD protection and higher-voltage DC supply; less tolerant of VSWR stress than LDMOS. | Select for new designs prioritizing efficiency and bandwidth >1 GHz; avoid where legacy 28 V supplies or ruggedized VSWR handling are mandatory. |
| MRFE6VP61K25H | 150 W LDMOS, 28 V, 21.5 dB gain, 58% efficiency at 520 MHz; RthJC = 0.35 °C/W; same LBB footprint but different pinout (Gate/Drain order swapped). | Lower gain requires additional driver stage; superior thermal resistance but incompatible pin mapping prevents drop-in replacement. | Select when thermal budget is tighter and board redesign is acceptable; verify gate drive timing due to reversed Gate A/Gate B placement. |
Compared with CGHV1F015S and MRFE6VP61K25H, RF3L05150CB4 offers optimal trade-off between ruggedness (90 V VDS, 20:1 VSWR), ease of integration (integrated ESD, 28 V compatibility), and proven reliability in avionics-grade production, making it preferred for safety-critical HF/UHF transmitters.
Availability
RF3L05150CB4 is available at Aetrix Electronics and suitable for avionics transmitters, HF jammers, commercial land mobile radios, and ISM instrumentation requiring stable component supply across extended temperature and lifecycle demands.
Supply support for RF3L05150CB4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in analog, power, and RF solutions for industrial, automotive, and communications markets.
RF3L05150CB4 belongs to ST's LDMOS RF Power Transistor product line, engineered specifically for high-reliability, wideband HF–UHF amplification in mission-critical communication and electronic warfare systems.
FAQ
What is the maximum safe operating voltage for RF3L05150CB4?
The absolute maximum drain-source voltage (VDS) is 90 V at TC = 25 °C, with recommended DC operating voltage limited to 28 V or 32 V depending on thermal design and pulse duty cycle. Exceeding 36 V VDD violates absolute maximum ratings and risks immediate device failure.
Can RF3L05150CB4 operate in class C mode?
Yes - its −8 V to +10 V gate-source voltage range and robust thermal design enable stable class C operation for high-efficiency HF jammer and broadcast applications. Bias must be set using negative VGS(Q) (e.g., −3 V to −5 V) with appropriate gate current limiting.
Is the LBB package lead-free and RoHS-compliant?
Yes - RF3L05150CB4 uses ST's ECOPACK e4 package, certified lead-free, halogen-free, and compliant with EU Directive 2002/95/EC (RoHS). Marking includes "e4" identifier per Figure 11 in DS13358 Rev 3.
What is the recommended gate resistor value for stability?
Per ST application guidance in DS13358, a 15 Ω non-inductive surface-mount resistor (0805) is recommended in series with each gate (pins 4 and 5) to suppress VHF/UHF parasitic oscillations. Layout must minimize loop inductance with short, direct traces to ground.
RF3L05150CB4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- LBB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1GHz
- Gain:
- 23dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 2.5A
- Noise Figure:
- -
- Current - Test:
- 500 mA
- Power - Output:
- 150W
- Voltage - Rated:
- 90 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- LBB
RF3L05150CB4 FAQ
1.How can I place an order for RF3L05150CB4 through Aetrix?
Please submit a Request for Quotation (RFQ) for RF3L05150CB4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RF3L05150CB4 reliable?
The price and inventory of RF3L05150CB4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RF3L05150CB4 is usually 5 days.
3.What payment methods are accepted for RF3L05150CB4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RF3L05150CB4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RF3L05150CB4?
RF3L05150CB4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RF3L05150CB4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RF3L05150CB4?
For technical support, including RF3L05150CB4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RF3L05150CB4 requirements.
6.How does Aetrix verify that RF3L05150CB4 is sourced from the original manufacturer or authorized distributors?
All RF3L05150CB4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RF3L05150CB4 meets industry standards.
7.What is the process for return or replacement of RF3L05150CB4?
All RF3L05150CB4 units undergo pre-shipment inspection (PSI). If there is an issue with RF3L05150CB4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RF3L05150CB4 part is unused and in its original packaging.
Return procedure for RF3L05150CB4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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