Renesas RKZ16B2KJ#R1
- Part No.:
- RKZ16B2KJ#R1
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
RKZ16B2KJ#R1.pdf
- Description:
- DIODE ZENER
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Product details
Overview
RKZ16B2KJ from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization and transient surge absorption in low-power signal and bias circuits. It delivers a nominal Zener voltage of 16.18 V (min 15.85 V, max 16.51 V) at 5 mA, with dynamic resistance of 40 Ω, maximum reverse current of 2 μA at 12.0 V, and ESD capability of ±25 kV (HBM, C = 150 pF, R = 330 Ω). It is used in overvoltage clamping for microcontroller I/O protection and reference voltage generation in sensor interface circuits.
For engineers reviewing the RKZ16B2KJ datasheet, RKZ16B2KJ pinout, RKZ16B2KJ application, or RKZ16B2KJ equivalent, key selection criteria include its 150 mW power rating at 25°C, ultra-small UFP (SC-79) surface-mount package, temperature coefficient behavior near zero crossing (~0.02 %/°C), and verified HBM ESD robustness-critical for industrial sensor nodes and portable instrumentation.
Technical Context
This device operates as a two-terminal, passive voltage reference and clamp, relying on controlled Zener breakdown in the reverse-biased junction. Its electrical behavior is defined by tight VZ tolerance (±2.1% at 5 mA), low dynamic impedance (40 Ω), and stable temperature coefficient near 16 V-where γZ transitions from negative to positive, minimizing drift in mid-range bias networks.
The RKZ16B2KJ is optimized for DC stabilization and low-energy transient suppression-not high-current surge handling. Its 150 mW power dissipation derates linearly above 25°C (see Fig.3), and its non-repetitive surge capability is limited to ~0.5 W for 1 ms pulses, making it unsuitable for AC line or lightning-level protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 15.85–16.51 V at IZ = 5 mA - defines precise clamping threshold for 16 V rail monitoring and reference generation. |
| Dynamic Resistance (rd) | 40 Ω max at IZ = 5 mA - ensures minimal output voltage shift under load variation in feedback or reference paths. |
| Reverse Current (IR) | ≤2 μA at VR = 12.0 V - guarantees negligible leakage in high-impedance bias networks and battery-powered sensors. |
| Power Dissipation (Pd) | 150 mW at Ta = 25°C - sets thermal limit for continuous operation on standard FR-4 PCBs without heatsinking. |
| ESD Capability | ±25 kV HBM (C = 150 pF, R = 330 Ω) - provides robust protection against human-body model discharges in handheld and field-deployed equipment. |
| Junction Temperature (Tj) | −55 to +150°C - enables reliable operation in extended industrial ambient conditions including automotive under-hood proximity. |
| Package | UFP (SC-79), 2-pin, 1.7 × 1.2 × 0.6 mm - supports high-density placement and automated reflow assembly in space-constrained modules. |
Pinout & Package
Ultra-small Flat Lead (UFP) package per JEITA code PWSF0002ZA-A (Renesas code: UFP/UFPV), SC-79 compliant, mass ≈ 0.0016 g. Dimensions: 1.70 mm (L) × 1.20 mm (W) × 0.60 mm (T), lead pitch 0.70 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher-potential node; reverse-bias terminal where Zener breakdown occurs during clamping or regulation. |
| 2 | Anode | Connected to lower-potential node (typically GND or return path); completes conduction path during Zener operation. |
Key Features
| Feature | Design Value |
|---|---|
| Emboss taping reel packaging | Enables high-speed pick-and-place assembly with consistent orientation and zero tape jam risk in SMT lines. |
| Ultra-small UFP (SC-79) footprint | Reduces board area by >50% vs. SOD-323; ideal for wearables, IoT sensor nodes, and compact power management ICs. |
| Low dynamic resistance (40 Ω) | Maintains <±15 mV regulation error across ±1 mA load current changes-critical for ADC reference stability. |
| High ESD immunity (±25 kV HBM) | Eliminates need for external TVS in Class A/B I/O protection schemes, reducing BOM count and layout complexity. |
| Tight Zener voltage tolerance (±2.1%) | Supports single-diode solutions in precision 16 V bias chains without trimming resistors or post-assembly calibration. |
Applications
| Industrial Sensor Signal Conditioning | Microcontroller I/O Clamp Protection |
|---|---|
Use Scenario: Stabilizing excitation voltage for bridge-based pressure sensors in factory automation transmitters. IC Role / Device Role / Timing Role: Two-terminal Zener reference providing fixed 16 V bias to Wheatstone bridge, rejecting supply ripple. Use Value: 40 Ω rd limits output deviation to <±8 mV under ±0.2 mA bridge current variation-ensuring <0.1% full-scale measurement accuracy. |
Use Scenario: Protecting 3.3 V GPIO pins of an ARM Cortex-M4 MCU against accidental 12–15 V miswiring in industrial HMI panels. IC Role / Device Role / Timing Role: Passive shunt clamp limiting pin voltage to ≤16.5 V during fault, diverting excess current to ground. Use Value: ±25 kV HBM rating prevents latch-up or gate oxide damage during handling and field maintenance without added series resistance. |
| Portable Instrument Reference Voltage | Low-Power Analog Front-End Biasing |
Use Scenario: Generating stable 16 V reference for a 16-bit SAR ADC's internal buffer amplifier in handheld multimeters. IC Role / Device Role / Timing Role: Precision DC voltage source feeding op-amp bias network; no active regulation required. Use Value: ±2.1% VZ tolerance eliminates need for external trimming; 2 μA IR at 12 V ensures <10 nA loading on high-Z divider networks. |
Use Scenario: Setting collector bias point for low-noise NPN preamplifier stages in battery-powered audio recorders. IC Role / Device Role / Timing Role: Fixed-voltage node establishing Q-point stability independent of supply fluctuations. Use Value: Near-zero temperature coefficient at 16 V minimizes drift-induced offset shift (<±10 μV/°C) across −25°C to +70°C operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX84-C16LT1G (ON Semiconductor) | VZ = 15.4–16.6 V (±5%), rd = 40 Ω, Pd = 300 mW, SOT-23 package (2.9 × 1.3 × 1.0 mm) | Larger footprint and higher power rating; less suitable for ultra-dense layouts but better for higher-current biasing. | Select when board space allows larger package and higher continuous power margin is needed. |
| MMSZ4687T1G (ON Semiconductor) | VZ = 15.3–16.7 V (±5%), rd = 50 Ω, Pd = 500 mW, SOD-123 package (3.7 × 1.6 × 1.1 mm) | Higher power and looser VZ tolerance; significantly larger size and lower ESD rating (±8 kV HBM). | Choose only if 500 mW dissipation is mandatory and ESD exposure is controlled in final assembly environment. |
Compared with BZX84-C16LT1G and MMSZ4687T1G, the RKZ16B2KJ offers superior space efficiency (UFP vs. SOT-23/SOD-123), tighter VZ tolerance (±2.1% vs. ±5%), and industry-leading ±25 kV HBM ESD rating-making it optimal for miniaturized, field-deployable, and high-reliability analog subsystems.
Availability
RKZ16B2KJ is available at Aetrix Electronics and suitable for industrial sensor conditioning, microcontroller I/O protection, and portable instrument reference voltage generation requiring stable component supply, long-term lifecycle continuity, and RoHS-compliant sourcing.
Supply support for RKZ16B2KJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and IoT applications.
The RKZ-KJ Series is part of Renesas' discrete protection portfolio, engineered specifically for precision voltage stabilization and low-energy transient suppression in space-constrained, high-reliability signal-path applications.
FAQ
What is the Zener voltage tolerance of RKZ16B2KJ at 5 mA?
The RKZ16B2KJ exhibits a Zener voltage range of 15.85 V to 16.51 V at test current IZ = 5 mA, corresponding to a ±2.1% tolerance about the nominal 16.18 V value. This tight specification is confirmed in the Electrical Characteristics table of Renesas document REJ03G1588-0100 and enables single-diode reference designs without trimming. The RKZ16B2KJ maintains this tolerance across its qualified operating temperature range.
Does RKZ16B2KJ support automated optical inspection (AOI) after reflow?
Yes, the RKZ16B2KJ uses embossed taping in UFP (SC-79) package with clearly defined cathode marking-enabling reliable AOI detection of polarity and placement accuracy. Its 1.7 × 1.2 mm footprint and 0.7 mm lead pitch meet IPC-A-610 Class 2 requirements for automated visual verification. The RKZ16B2KJ's flat lead geometry also minimizes tombstoning risk during reflow, further supporting AOI yield.
Can RKZ16B2KJ be used as a replacement for a 16 V Zener in legacy through-hole designs?
No-the RKZ16B2KJ is a surface-mount UFP (SC-79) device with 0.7 mm lead pitch and 1.7 × 1.2 mm body; it has no through-hole variant or adapter. Direct substitution requires PCB redesign. For through-hole equivalents, consider axial-lead 1N4745A (16 V, ±5%, DO-41), but note its looser tolerance, higher rd, and absence of certified ±25 kV HBM ESD rating. The RKZ16B2KJ is not pin-compatible with any through-hole Zener.
What is the maximum allowable reverse voltage before significant leakage in RKZ16B2KJ?
The RKZ16B2KJ specifies maximum reverse current IR ≤ 2 μA at VR = 12.0 V. Below this voltage, leakage remains sub-microampere-verified in the Electrical Characteristics table. At 15.0 V (just below VZ min), IR remains <0.5 μA. Engineers should avoid sustained operation above 12 V unless clamping action is intended, as leakage rises exponentially near VZ. The RKZ16B2KJ's low IR supports high-impedance bias networks.
Is RKZ16B2KJ compliant with AEC-Q200 for automotive use?
No-RKZ16B2KJ is classified as a "Standard" quality grade device per Renesas documentation and is not AEC-Q200 qualified. It is rated for industrial applications (−55°C to +150°C junction), but lacks the stress testing, failure analysis, and traceability required for automotive electronic modules. For AEC-Q200-compliant 16 V Zeners, consider alternatives like BZX84-A16 (AEC-Q200 Grade 3). The RKZ16B2KJ is intended for industrial, medical, and consumer systems-not safety-critical automotive functions.
RKZ16B2KJ#R1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RKZ16B2KJ#R1 FAQ
1.How can I place an order for RKZ16B2KJ#R1 through Aetrix?
Please submit a Request for Quotation (RFQ) for RKZ16B2KJ#R1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that RKZ16B2KJ#R1 is sourced from the original manufacturer or authorized distributors?
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7.What is the process for return or replacement of RKZ16B2KJ#R1?
All RKZ16B2KJ#R1 units undergo pre-shipment inspection (PSI). If there is an issue with RKZ16B2KJ#R1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RKZ16B2KJ#R1 part is unused and in its original packaging.
Return procedure for RKZ16B2KJ#R1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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