Renesas RKZ8.2B2KJ#R1

Overview

RKZ8.2B2KJ from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization and transient surge absorption in low-power signal paths. It delivers a nominal Zener voltage of 8.2 V (min 8.02 V, max 8.36 V) at 5 mA, with dynamic resistance of 30 Ω, 150 mW power dissipation, and ESD capability of ±30 kV (HBM), commonly used in I/O protection circuits of microcontroller peripherals.

For engineers reviewing the RKZ8.2B2KJ datasheet, RKZ8.2B2KJ pinout, RKZ8.2B2KJ application, or RKZ8.2B2KJ equivalent, key selection considerations include its UFP package footprint, low leakage (<2 µA at 5.0 V), tight V_Z tolerance, and suitability for space-constrained consumer and industrial interface protection where stable clamping voltage and high ESD robustness are required.

Technical Context

This device operates as a two-terminal voltage reference and clamp, leveraging silicon planar junction technology to maintain stable reverse breakdown characteristics across temperature. Its design targets low-current stabilization (IZ = 5 mA) and fast transient response during ESD events, supported by a 150 pF / 330 Ω test model per JEDEC JS-001.

The RKZ8.2B2KJ exhibits a positive Zener voltage temperature coefficient near +0.04 %/°C (≈ +3.3 mV/°C), optimized for minimal drift in ambient ranges up to +125°C. Its ultra-small flat lead (UFP) package enables direct integration into high-density PCB layouts without thermal derating penalties typical of larger packages.

Key Specifications

Pinout & Package

Package: Ultra Small Flat Lead (UFP), JEITA code PWSF0002ZA-A, SC-79 compliant, mass 0.0016 g. Dimensions: 1.70 mm (L) × 1.20 mm (W) × 0.60 mm (H), with cathode marked by dot on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZX55C8V2 and MMSZ5236B, the RKZ8.2B2KJ offers superior space efficiency and tighter voltage control in a fully surface-mountable UFP package, making it the preferred choice for next-generation portable and IoT designs where PCB area and ESD margin are critical constraints.

Availability

RKZ8.2B2KJ is available at Aetrix Electronics and suitable for USB interface protection, industrial sensor signal conditioning, smartphone button ESD suppression, and IoT battery monitoring requiring stable component supply and guaranteed long-term sourcing.

Supply support for RKZ8.2B2KJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and enterprise applications.

The RKZ-KJ Series was developed specifically for high-reliability, low-power voltage stabilization and surge absorption in space-constrained consumer and industrial electronics, emphasizing ESD resilience and tight parametric control.

FAQ

What is the maximum reverse voltage the RKZ8.2B2KJ can safely clamp without degradation?

The RKZ8.2B2KJ is rated for nonrepetitive surge reverse power (PRSM) up to 1.0 W for 1 ms pulses, with a maximum steady-state reverse voltage of 8.36 V at 5 mA. Continuous operation above this voltage risks thermal runaway; design must ensure average power remains ≤150 mW with appropriate series impedance. The RKZ8.2B2KJ maintains specification integrity only within its absolute maximum ratings-exceeding 8.36 V at I_Z >5 mA requires derating per Fig.3 in the datasheet.

Does the RKZ8.2B2KJ meet RoHS and REACH compliance standards?

Yes, the RKZ8.2B2KJ conforms to RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed by Renesas' material declarations and manufacturing records. Lead content is below 1000 ppm, and all restricted substances-including cadmium, mercury, hexavalent chromium, PBBs, and PBDEs-are absent at detectable levels. The RKZ8.2B2KJ is also halogen-free per JESD209-2.

Can the RKZ8.2B2KJ be used in bidirectional ESD protection configurations?

No-the RKZ8.2B2KJ is a unidirectional Zener diode optimized for cathode-to-anode reverse breakdown. For bidirectional protection, two RKZ8.2B2KJ devices must be connected anode-to-anode (back-to-back), or a dedicated bidirectional TVS like the RCLAMP0524P should be selected. Using a single RKZ8.2B2KJ in forward bias provides only ~0.7 V clamping, insufficient for most ESD threats.

What is the thermal resistance (θ_JA) of the RKZ8.2B2KJ in standard PCB layout?

While not explicitly listed in the datasheet, θ_JA for the RKZ8.2B2KJ in a typical 2-layer FR-4 board with 1-oz copper and no thermal vias is approximately 833°C/W-calculated from P_d = 150 mW and ΔT = (T_j − T_a) = 125°C at rated power. This value assumes 10 mm² copper pad per terminal; adding thermal vias reduces θ_JA to ~400°C/W. The RKZ8.2B2KJ's UFP package relies on lead conduction rather than die attach for heat transfer.

How does the Zener voltage temperature coefficient affect performance in automotive cabin applications?

The RKZ8.2B2KJ has a positive temperature coefficient of +0.04 %/°C (≈ +3.3 mV/°C), meaning V_Z increases linearly with junction temperature. Over −40°C to +125°C, total drift is ~0.55 V-within acceptable limits for non-critical clamping functions. In automotive cabin applications (e.g., infotainment button protection), this drift does not compromise ESD immunity, as the RKZ8.2B2KJ's ±30 kV HBM rating remains stable across temperature. System-level validation is still recommended.