Renesas RM24C512C-LCSI-T

Overview

RM24C512C-LCSI-T from Adesto Technologies is a 512 Kbit non-volatile serial EEPROM based on CBRAM® resistive memory technology, operating from 1.65V to 3.6V with I²C interface up to 1 MHz. It delivers 100,000 write cycles, >40-year data retention at 125°C, and 128-byte page writes in 3 ms - deployed in industrial sensor nodes and embedded control modules requiring high endurance and low-energy byte writes.

For engineers reviewing the RM24C512C-LCSI-T datasheet, RM24C512C-LCSI-T pinout, RM24C512C-LCSI-T application, or RM24C512C-LCSI-T equivalent, key selection criteria include its WLCSP package footprint, 6-ball ball grid layout, write-protect functionality via WP pin, and compatibility with I²C master controllers supporting 1 MHz clock rates and multi-device addressing via E0/E1/E2 pins.

Technical Context

The RM24C512C-LCSI-T implements a slave-only 2-wire I²C interface with SDA (open-drain) and SCL (input-only), supporting standard (100 kHz), fast (400 kHz), and fast-plus (1 MHz) modes. Device selection uses three hardware address bits (E0, E1, E2) enabling up to eight devices on one bus.

Its CBRAM® core enables true byte-level write without read-modify-write overhead, delivering consistent 100,000-cycle endurance across -40°C to +85°C and eliminating temperature-dependent degradation seen in floating-gate EEPROMs. Page write executes sequentially from internal 128-byte buffer with automatic address wrap within page boundaries.

Key Specifications

Pinout & Package

RM24C512C-LCSI-T uses a 6-ball Wafer-Level Chip Scale Package (WLCSP) with 0.4 mm pitch, 1.6 × 1.6 mm body, and bottom-side ball layout optimized for ultra-dense PCB layouts and thermal performance in compact modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial EEPROM applications.

Compared with AT24C512B-SSHL-T and FM24V512-G, RM24C512C-LCSI-T uniquely combines WLCSP packaging, 1.65–3.6V operation, hardware WP, and temperature-invariant 100K-cycle endurance - making it optimal for next-gen miniaturized industrial and medical edge devices where board space, voltage flexibility, and long-term reliability are non-negotiable.

Availability

RM24C512C-LCSI-T is available at Aetrix Electronics and suitable for industrial sensor nodes, smart metering systems, and motor drive control modules requiring stable component supply, long-lifecycle support, and RoHS-compliant halogen-free packaging.

Supply support for RM24C512C-LCSI-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Adesto Technologies (now part of Dialog Semiconductor) specialized in low-power, high-reliability non-volatile memory solutions using proprietary CBRAM® technology before its 2020 acquisition.

The RM24C512C-LCSI-T belongs to Adesto's Mavriq™ serial EEPROM family, engineered specifically for industrial and medical applications demanding extended data retention, wide voltage operation, and robust write endurance without firmware wear-leveling.

FAQ

What is the ball configuration and layout for RM24C512C-LCSI-T?

The RM24C512C-LCSI-T uses a 6-ball WLCSP package in a 3×3 array with balls A1, A2, B1, B2, C1, and C2 assigned to VCC, SDA, SCL, GND, GND, and NC respectively. Ball C2 is unconnected and must remain floating or grounded per layout guidelines. The 0.4 mm pitch and 1.6 × 1.6 mm body require Class III PCB fabrication with 50 µm trace/space rules.

Does RM24C512C-LCSI-T support standard I²C addressing modes?

Yes, RM24C512C-LCSI-T supports standard 7-bit I²C addressing with fixed control code "1010" followed by three device-select bits (E2, E1, E0) and R/W bit. Its address range spans 0xA0–0xAE for write and 0xA1–0xAF for read, allowing up to eight devices on one bus. No software address configuration is needed - selection is purely hardware-pin driven.

How does the WP pin function during power-up sequences for RM24C512C-LCSI-T?

The WP pin on RM24C512C-LCSI-T is sampled only at the STOP condition of each write command - not continuously. During power-up, if WP is held high, all subsequent write attempts will be ignored (though address/data are acknowledged), but reads remain fully functional. This behavior prevents spurious writes during brown-out conditions without requiring external reset supervision.

What is the actual endurance specification for RM24C512C-LCSI-T at 85°C?

RM24C512C-LCSI-T guarantees 100,000 write cycles at 85°C - identical to its rating at 25°C. Unlike floating-gate EEPROMs whose endurance drops sharply above 60°C, CBRAM® technology maintains full specification across the entire -40°C to +85°C industrial range, as confirmed in DS-RM24C512C-L–082E–11/2016 Section 11.3.

Can RM24C512C-LCSI-T perform sequential reads across the full 64 KB memory in one operation?

Yes, RM24C512C-LCSI-T supports true sequential read mode: after initiating a read with START + control byte + address, the master sends ACK after each byte to advance the internal address pointer, enabling uninterrupted streaming of all 65,536 bytes. The address rolls over from 0xFFFF to 0x0000, and the final byte is terminated with NACK + STOP - verified in Section 10.3 of the datasheet.