Renesas RM25C32DS-LTAI-B
- Part No.:
- RM25C32DS-LTAI-B
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-TSSOP (0.173", 4.40mm Width)
- Datasheet:
-
RM25C32DS-LTAI-B.pdf
- Description:
- IC CBRAM 32KBIT SPI 20MHZ 8TSSOP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
RM25C32DS-LTAI-B from Adesto Technologies is a 32Kbit serial EEPROM memory IC using CBRAM® resistive technology, operating from 1.65V to 3.6V with SPI interface (modes 0 and 3), 10 MHz fast read capability, and 100,000 write cycles endurance. It serves as non-volatile data storage in space-constrained embedded systems requiring ultra-low power and high reliability.
For engineers reviewing the RM25C32DS-LTAI-B datasheet, RM25C32DS-LTAI-B pinout, RM25C32DS-LTAI-B application, or RM25C32DS-LTAI-B equivalent, key selection criteria include its 0.5 µA ultra-deep power-down current, 60 µs byte-write latency, OTP security register, auto power-down behavior, and compatibility with industrial temperature range (–40°C to +85°C) designs.
Technical Context
The RM25C32DS-LTAI-B implements a 4-wire SPI interface (CS, SCK, SDI, SDO) with HOLD and WP pins for flow control and hardware write protection. Its CBRAM® core enables true byte-level direct-write without pre-erase, eliminating read-modify-write overhead typical of floating-gate EEPROMs.
It features dual-status registers (non-volatile Byte 1 and volatile Byte 2), supports page (32-byte) and byte programming, and integrates configurable low-power modes - including auto Ultra-Deep Power-Down after write completion and programmable Low Power Standby Enable (LPSE) - all managed via SPI commands and status bits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 32 Kbit (4 KB) non-volatile array, sufficient for firmware parameters, calibration data, or event logs in microcontroller-based systems |
| Supply voltage | 1.65 V – 3.6 V single supply, enabling direct interface with 1.8 V and 3.3 V logic domains without level shifting |
| Read speed | Up to 10 MHz fast read mode, reducing data access latency in time-critical logging or configuration retrieval |
| Write performance | 60 µs byte-write time and 1.5 ms page-write time for 32-byte pages, enabling rapid field updates without system stall |
| Endurance & retention | 100,000 write cycles and >40 years data retention at 125°C, validated across full industrial temperature range |
| Power consumption | 0.5 µA ultra-deep power-down current and 0.20 mA active read current, critical for battery-powered IoT edge nodes |
| Security register | 64-byte OTP register: 32 bytes factory-programmed unique ID + 32 bytes user-programmable, supporting device authentication and secure boot binding |
Pinout & Package
RM25C32DS-LTAI-B is housed in an 8-lead TSSOP package (3.0 mm × 4.4 mm, 0.65 mm pitch), RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: CS | Chip Select | Active-low enable for SPI communication; high state places device in standby, reducing current to ≤77 µA |
| 2: SDO | Serial Data Output | Tri-state output delivering read data on SCK falling edge; high-impedance when CS high or in ultra-deep power-down |
| 3: WP | Write Protect | Hardware lock for Status Register when SRWD = 1; prevents accidental configuration changes during power transitions |
| 4: GND | Ground reference | Primary return path for VCC and I/O; requires low-impedance connection to minimize noise coupling into CBRAM array |
| 5: SDI | Serial Data Input | Accepts SPI opcodes, addresses, and data on SCK rising edge; must be driven to valid logic level to avoid leakage-induced wake-up |
| 6: SCK | Serial Clock | Master-generated timing signal; supports polarity modes 0 and 3; max 10 MHz in fast read, 1.6 MHz in normal read |
| 7: HOLD | Communication pause | Halts ongoing SPI transfer without resetting internal address counter; enables multi-master arbitration or priority interrupt handling |
| 8: VCC | Power supply | 1.65–3.6 V input; requires 100 nF ceramic decoupling capacitor placed within 2 mm of pin per datasheet layout guidance |
Key Features
| Feature | Design Value |
|---|---|
| CBRAM® technology | Enables true byte-write without erase, delivering 40× higher endurance than floating-gate EEPROM at 85°C and no degradation across –40°C to +85°C |
| Ultra-deep power-down | 0.04 µA typical current at 25°C reduces energy use in sleep states by >99% vs. standard standby, extending battery life in metering and sensor nodes |
| Auto power-state transition | Configurable APDE and LPSE bits allow automatic entry into Power-Down or Low Power Standby when idle, eliminating software polling overhead |
| OTP Security Register | Factory-programmed 32-byte unique ID enables cryptographic key derivation and clone-resistant device identity in secure firmware update workflows |
| Flexible protection scheme | Combines hardware (WP pin + SRWD bit) and software (BP0/BP1 block protection, WEL latch) mechanisms to prevent unintended writes during brown-out or reset conditions |
Applications
| Smart Energy Meters | Industrial PLC I/O Modules |
|---|---|
Use Scenario: Storing tariff schedules, tamper-event timestamps, and calibration coefficients across 10+ year field deployment. IC Role / Device Role / Timing Role: Non-volatile parameter store interfaced to ARM Cortex-M4 MCU via SPI, accessed during cold start and periodic firmware validation. Use Value: 40-year data retention at 125°C ensures integrity under transformer-adjacent thermal stress; 100K write cycles support daily log rollover without wear leveling. | Use Scenario: Retaining module configuration (I/O mapping, scaling factors, fault thresholds) after power loss in distributed control cabinets. IC Role / Device Role / Timing Role: Configuration EEPROM co-located with isolated RS-485 transceiver and ADC, updated only during commissioning or diagnostics. Use Value: 0.5 µA ultra-deep power-down current prevents battery drain in backup-supplied modules; OTP register binds firmware image to hardware identity. |
| Medical Wearable Sensors | Automotive Body Control Units |
Use Scenario: Logging patient-specific sensor offsets and therapy history in disposable patch monitors powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-energy data logger storing <100 bytes/day, accessed intermittently by BLE SoC over 1.8 V SPI bus. Use Value: 50 nJ byte-write energy minimizes per-event power draw; 1.65 V minimum VCC enables operation down to end-of-life battery voltage (~1.7 V). | Use Scenario: Storing seat position memory, mirror presets, and lighting profiles in door modules subject to automotive temperature cycling. IC Role / Device Role / Timing Role: Parameter storage IC connected to LIN or CAN gateway MCU, updated during ignition-off learning sequences. Use Value: No data loss under UV exposure ensures reliability in sun-facing locations; -40°C to +85°C rating matches AEC-Q200 ambient requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial EEPROM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT25DF041A-SSH-T | 4 Mbit NOR flash with sector erase; requires explicit erase before write; 100K program/erase cycles | Larger capacity but slower random access; lacks OTP register and ultra-deep power-down mode | Choose for firmware storage where sequential reads dominate and byte-write frequency is low |
| M95M04-DRMN6TP/K | 4 Mbit SPI EEPROM using floating-gate technology; 1 MHz max clock; 1 mA write current; no OTP register | Higher active current and lower endurance in byte-write mode; lacks CBRAM's temperature-invariant write performance | Choose for cost-sensitive legacy designs where 100K cycle requirement is relaxed and 3.3 V only operation is acceptable |
Compared with AT25DF041A-SSH-T and M95M04-DRMN6TP/K, RM25C32DS-LTAI-B delivers superior energy efficiency per write operation, guaranteed endurance across temperature, and integrated security features - making it optimal for compact, battery-operated, or safety-critical parameter storage where reliability and low quiescent power are design priorities.
Availability
RM25C32DS-LTAI-B is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, medical wearables, automotive body electronics, and IoT sensor node designs requiring stable component supply, long-term lifecycle support, and guaranteed RoHS/halogen-free compliance.
Supply support for RM25C32DS-LTAI-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Adesto Technologies (acquired by Dialog Semiconductor in 2020, now part of Renesas Electronics) specialized in ultra-low-power non-volatile memory solutions based on proprietary resistive switching technologies.
The RM25C32DS-LTAI-B belongs to Adesto's CBRAM®-based serial EEPROM product line, engineered for applications demanding high endurance, minimal energy per write, and robust operation across extended temperature and radiation-exposed environments.
FAQ
What is the maximum clock frequency supported by RM25C32DS-LTAI-B in fast read mode?
The RM25C32DS-LTAI-B supports up to 10 MHz SCK frequency in fast read mode (FREAD command, 0Bh), enabling high-throughput data retrieval while maintaining signal integrity on compact PCB layouts. This is double the 1.6 MHz limit of normal read mode (READ command, 03h) and is validated under CL = 10 pF loading per the DS-RM25C32DS–124C datasheet.
Does RM25C32DS-LTAI-B require pre-erase before byte programming?
No, RM25C32DS-LTAI-B does not require pre-erase before byte programming. As a CBRAM®-based device, it supports true direct-write: any byte can be overwritten in-place without erasing surrounding cells or entire pages. This eliminates the read-modify-write overhead inherent in floating-gate EEPROMs and contributes to its 100,000-cycle endurance guarantee.
How does the OTP Security Register function in RM25C32DS-LTAI-B?
The RM25C32DS-LTAI-B includes a 64-byte One-Time Programmable (OTP) Security Register: the first 32 bytes are factory-programmed with a unique device identifier, and the remaining 32 bytes are user-programmable once. Access is via ROTPSR (77h) and POTPSR (9Bh) commands. This register supports secure boot binding, anti-cloning, and cryptographic key derivation in trusted execution environments.
What power-down modes are available on RM25C32DS-LTAI-B, and how do they differ?
RM25C32DS-LTAI-B offers three low-power states: Standby (CS high, ~77 µA), Power-Down (PD command, ~2.8 µA), and Ultra-Deep Power-Down (UDPD command, 0.04 µA typical). Auto Ultra-Deep Power-Down can be enabled (AUDPD bit) to enter UDPD automatically after write completion. Only the Exit Ultra-Deep Power-Down sequence wakes the device from UDPD - all other commands are ignored.
Is RM25C32DS-LTAI-B compatible with standard SPI controllers?
Yes, RM25C32DS-LTAI-B is fully compatible with standard SPI controllers supporting Mode 0 (CPOL=0, CPHA=0) and Mode 3 (CPOL=1, CPHA=1). It uses standard 4-wire SPI (CS, SCK, SDI, SDO) with optional HOLD and WP pins. All instructions follow JEDEC-standard opcodes (e.g., 03h for READ, 02h for WRITE), and timing meets SPI bus specifications across its 1.65–3.6 V supply range.
RM25C32DS-LTAI-B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- Mavriq™
- Package/Case:
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- CBRAM®
- Technology:
- CBRAM
- Memory Size:
- 32Kbit
- Memory Organization:
- 32 Bytes Page Size
- Memory Interface:
- SPI
- Clock Frequency:
- 20 MHz
- Write Cycle Time - Word, Page:
- 100µs, 2.5ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSSOP
RM25C32DS-LTAI-B FAQ
1.How can I place an order for RM25C32DS-LTAI-B through Aetrix?
Please submit a Request for Quotation (RFQ) for RM25C32DS-LTAI-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RM25C32DS-LTAI-B reliable?
The price and inventory of RM25C32DS-LTAI-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RM25C32DS-LTAI-B is usually 5 days.
3.What payment methods are accepted for RM25C32DS-LTAI-B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RM25C32DS-LTAI-B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RM25C32DS-LTAI-B?
RM25C32DS-LTAI-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RM25C32DS-LTAI-B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RM25C32DS-LTAI-B?
For technical support, including RM25C32DS-LTAI-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RM25C32DS-LTAI-B requirements.
6.How does Aetrix verify that RM25C32DS-LTAI-B is sourced from the original manufacturer or authorized distributors?
All RM25C32DS-LTAI-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RM25C32DS-LTAI-B meets industry standards.
7.What is the process for return or replacement of RM25C32DS-LTAI-B?
All RM25C32DS-LTAI-B units undergo pre-shipment inspection (PSI). If there is an issue with RM25C32DS-LTAI-B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RM25C32DS-LTAI-B part is unused and in its original packaging.
Return procedure for RM25C32DS-LTAI-B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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