Renesas RM25C64C-BSNC-T

Overview

RM25C64C-BSNC-T from Adesto Technologies is a 64 Kbit non-volatile serial EEPROM memory IC based on CBRAM® resistive switching technology, operating from 1.65V to 3.6V supply, supporting SPI modes 0 and 3, with 10 MHz fast read capability and 32-byte page write - used for firmware storage and parameter retention in ultra-low-power IoT sensors and medical wearables.

For engineers reviewing the RM25C64C-BSNC-T datasheet, RM25C64C-BSNC-T pinout, RM25C64C-BSNC-T application, or RM25C64C-BSNC-T equivalent, key selection criteria include its 2.2 µA power-down current, 100,000 write endurance, 10-year data retention, CBRAM-based low-energy byte write (50 nJ), and SOIC-8/TSSOP-8 package compatibility with space-constrained embedded designs.

Technical Context

The RM25C64C-BSNC-T implements a 4-wire SPI interface (CS, SDO, SDI, SCK) with dual read modes: normal (1.6 MHz max) and fast (10 MHz max). It uses self-timed internal erase/write cycles and supports both byte-level (25 µs) and 32-byte page-level (1 ms) programming.

Its CBRAM® technology enables direct-write operation without charge pumps, delivering lower energy per byte write and faster page programming than conventional EEPROM. The device includes hardware write protection via WP pin and software protection via Status Register bits (SRWD, BP0/BP1, WEL), plus three low-power states: Standby, Power Down (2.2 µA), and Ultra-Deep Power Down (1.6 µA).

Key Specifications

Pinout & Package

RM25C64C-BSNC-T is packaged in an 8-lead SOIC (Small Outline Integrated Circuit) with standard 150 mil body width and 1.27 mm pitch - RoHS-compliant, halogen-free, and compatible with automated SMT assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial EEPROM applications.

Compared with AT25DF041A-SSH-T and FM25V05-G, RM25C64C-BSNC-T uniquely balances ultra-low power-down current (2.2 µA), 100K endurance, and true byte-write flexibility - making it optimal for battery-critical, medium-write-frequency embedded systems where flash is too slow and FRAM is too power-hungry.

Availability

RM25C64C-BSNC-T is available at Aetrix Electronics and suitable for medical wearables, industrial sensor nodes, smart metering modules, and automotive cabin controllers requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for RM25C64C-BSNC-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Adesto Technologies (now part of Dialog Semiconductor, a Renesas company) specializes in ultra-low-power, non-volatile memory and IoT connectivity solutions using proprietary technologies like CBRAM®.

The RM25C-Series was designed specifically for energy-constrained embedded systems needing reliable, fast, low-energy non-volatile storage - targeting applications where traditional EEPROM and flash fall short in power, speed, or endurance.

FAQ

What is the maximum clock frequency supported by RM25C64C-BSNC-T in fast read mode?

The RM25C64C-BSNC-T supports a maximum SCK clock frequency of 10 MHz in fast read mode, enabling rapid sequential reads across the full 8 KB memory array. This is verified in Section 3.2 AC Operating Characteristics of the DS-RM25C64C-L–097D datasheet, with tOV = 6.5 ns and CL = 10 pF test condition. The 10 MHz capability allows sub-millisecond full-memory access, critical for real-time data retrieval in edge devices.

Does RM25C64C-BSNC-T require a high-voltage programming pulse like traditional EEPROMs?

No, RM25C64C-BSNC-T does not require high-voltage programming pulses. It uses Adesto's CBRAM® resistive switching technology, which operates with standard 1.65–3.6 V supply and performs direct-write operations without charge pumps or Fowler-Nordheim tunneling. This eliminates reliability risks associated with oxide stress and enables lower energy consumption - confirmed by the 50 nJ byte-write specification in the datasheet's Features section.

How many write cycles can RM25C64C-BSNC-T endure before failure?

RM25C64C-BSNC-T guarantees 100,000 write/erase cycles per memory location, as specified in the datasheet's Endurance table and compliant with JEDEC JESD22-A117B. This endurance rating applies to both byte and page write operations and is validated across the full operating temperature range (−40°C to +85°C), making it suitable for field-upgradable industrial and automotive applications.

What package types are available for RM25C64C-BSNC-T?

RM25C64C-BSNC-T is offered in 8-lead SOIC (Small Outline Integrated Circuit) package, as indicated by the "BSNC" suffix in the part number and confirmed in the Features section ("8-lead SOIC and TSSOP packages"). The SOIC variant has 150 mil body width and 1.27 mm lead pitch, ensuring compatibility with standard PCB assembly processes and footprint reuse across legacy EEPROM designs.

Can RM25C64C-BSNC-T be used with a 1.8 V microcontroller SPI interface?

Yes, RM25C64C-BSNC-T is fully compatible with 1.8 V microcontrollers. Its supply voltage range is 1.65 V to 3.6 V, and its input thresholds (VIL = 0.3×VCC, VIH = 0.7×VCC) ensure robust logic-level recognition at 1.8 V. DC characteristics in Table 3-1 confirm operation down to 1.65 V, and AC timing parameters (e.g., tSCKH/tSCKL = 7.5 ns) remain valid across the entire voltage range - enabling direct interfacing without level shifters.