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Renesas RM25C64C-LSNI-B
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- Part No.:
- RM25C64C-LSNI-B
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
RM25C64C-LSNI-B.pdf
- Description:
- IC CBRAM 64KBIT SPI 10MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,539
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Product details
Overview
RM25C64C-LSNI-B from Adesto Technologies is a 64 Kbit non-volatile serial EEPROM memory IC based on CBRAM® resistive switching technology, operating from 1.65V to 3.6V supply and communicating via SPI interface (modes 0 and 3). It delivers 10 MHz fast read speed, 32-byte page write in 1 ms, and consumes only 50 nJ per byte write - enabling ultra-low-energy data logging in battery-powered IoT sensors.
For engineers reviewing the RM25C64C-LSNI-B datasheet, RM25C64C-LSNI-B pinout, RM25C64C-LSNI-B application, or RM25C64C-LSNI-B equivalent, this page provides verified technical context, real-world use cases, validated alternatives, and supply-ready procurement details for embedded systems requiring high endurance, low-power non-volatile storage with fast random access.
Technical Context
The RM25C64C-LSNI-B implements a 4-wire SPI interface (CS, SDO, SDI, SCK) with hardware HOLD and WP pins, supporting both normal (1.6 MHz) and fast read (10 MHz) modes. Its internal architecture includes a 32-byte page buffer, status register with WIP/WEL bits, and CBRAM® memory array enabling direct-write operation without erase-before-write overhead.
It features three power management states - Standby, Power Down (2.2 µA typical), and Ultra-Deep Power Down (1.6 µA typical) - all controlled via SPI commands (PD, UDPD, RES). Block protection is configurable via BP0/BP1 bits and hardware-enforced via SRWD+WP pin interaction, satisfying secure firmware parameter storage requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 64 Kbit (8 KB) non-volatile storage, sufficient for configuration tables and calibration data in compact edge nodes. |
| Supply voltage range | 1.65V–3.6V - compatible with single-cell Li-ion, coin cell, and 3.3V logic rails without level shifting. |
| Fast read clock rate | 10 MHz - enables full memory read in <13 ms, critical for rapid boot-time parameter loading. |
| Page write time | 1 ms for 32 bytes - 4–6× faster than conventional EEPROM, reducing host MCU wait time during field updates. |
| Write energy per byte | 50 nJ - 90% lower than comparable EEPROMs, extending battery life in wireless sensor nodes. |
| Data retention | 10 years at +85°C - validated for automotive under-hood and industrial control applications. |
| Endurance | 100,000 write cycles - supports daily firmware parameter updates over 27 years of operation. |
| Operating temperature | −40°C to +85°C - qualified for industrial and extended commercial environments. |
Pinout & Package
RM25C64C-LSNI-B is housed in an 8-lead SOIC package (3.9 mm × 4.9 mm, 1.27 mm pitch), RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS (Pin 1) | Chip Select | Active-low enable: pulls device out of standby; CS high forces high-impedance SDO and disables command acceptance. |
| SDO (Pin 2) | Serial Data Output | Tri-state output delivering read data or status on SCK falling edge; high-Z when CS high or HOLD active. |
| WP (Pin 3) | Write Protect | Hardware lock for Status Register: protects BP0/BP1/SRWD bits when SRWD=1 and WP=low. |
| GND (Pin 4) | Ground reference | Primary return path for VCC current and signal integrity reference for all I/O pins. |
| SDI (Pin 5) | Serial Data Input | Accepts opcodes, addresses, and write data on SCK rising edge; ignored unless CS is low. |
| SCK (Pin 6) | Serial Clock | Master-generated timing signal; defines SPI mode (0 or 3) via idle polarity; max 10 MHz in fast read. |
| HOLD (Pin 7) | Communication pause | Halts ongoing SPI transfer without resetting sequence; allows host MCU to service interrupts mid-transaction. |
| VCC (Pin 8) | Power supply | 1.65V–3.6V input; includes internal VCC inhibit (1.55V) to block operations during brown-out. |
Key Features
| Feature | Design Value |
|---|---|
| CBRAM® resistive memory technology | Enables true byte-write without pre-erase, eliminating latency and wear penalty of flash-based EEPROM emulators. |
| Ultra-low write energy (50 nJ/byte) | Reduces average system power by >50% vs. standard SPI EEPROM in duty-cycled sensor logging applications. |
| 10 MHz fast read mode | Supports real-time parameter fetch in <1 µs per byte, enabling deterministic response in closed-loop control systems. |
| Configurable power-down states | Three software-controllable low-power modes (Standby, PD, UDPD) with sub-2 µA quiescent current for always-on devices. |
| Hardware + software write protection | Combines WP pin + SRWD bit and BP0/BP1 block locks to prevent accidental firmware corruption during OTA updates. |
| Self-timed page/chip erase | Eliminates host MCU timing dependencies: PERS (42h) and CERS (60h/C7h) complete autonomously with WIP flag polling. |
Applications
| Industrial Sensor Node | Medical Wearable |
|---|---|
|
Use Scenario: Continuous environmental monitoring with periodic wake-up, local data buffering, and BLE transmission. IC Role / Device Role / Timing Role: Non-volatile parameter store for calibration coefficients, sensor offsets, and last-known state across power cycles. Use Value: 50 nJ/byte write energy extends CR2032 battery life to >5 years; 100,000-cycle endurance supports daily firmware updates. |
Use Scenario: ECG patch recording raw waveform segments before compression and wireless upload. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for timestamped biometric metadata and device configuration. Use Value: 10 MHz fast read enables <100 µs parameter fetch during heartbeat-triggered processing; −40°C to +85°C rating ensures clinical reliability. |
| Automotive Body Control Module | Smart Home Hub |
|
Use Scenario: Storing seat/mirror position presets, lighting profiles, and error logs in door modules and junction boxes. IC Role / Device Role / Timing Role: Secure, tamper-resistant configuration memory with hardware write lock for safety-critical settings. Use Value: WP+SRWD hardware lock prevents unauthorized changes during CAN bus diagnostics; 10-year retention meets OEM warranty requirements. |
Use Scenario: Maintaining user preferences, network credentials, and OTA update staging across power interruptions. IC Role / Device Role / Timing Role: Low-voltage (1.65V) non-volatile storage co-located with 3.3V SoC, eliminating external regulators. Use Value: 1.65V minimum VCC allows direct connection to SoC's LDO output; 32-byte page writes minimize host CPU occupancy during config saves. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial EEPROM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT25DF041A-SSHN-B | 4 Mbit SPI NOR Flash (not EEPROM); requires sector erase before write; 3V-only supply (2.7–3.6V). | Larger capacity but higher write latency (>25 ms sector erase); unsuitable for frequent byte updates. | Select only if >64 Kbit capacity and code storage (not data logging) are primary needs. |
| 25LC640A-I/P | 64 Kbit SPI EEPROM using floating-gate technology; 1.8–5.5V supply; 5 ms page write; 1 MHz max clock. | Wider voltage range but 5× slower page write and 10× higher write energy (500 nJ/byte). | Prefer for legacy 5V systems or where CBRAM®'s ultra-low power is not required. |
Compared with AT25DF041A-SSHN-B and 25LC640A-I/P, RM25C64C-LSNI-B uniquely combines sub-1-ms page writes, 10 MHz read speed, and 50 nJ/byte write energy - making it optimal for energy-constrained, high-update-rate embedded data storage where endurance and low VCC matter.
Availability
RM25C64C-LSNI-B is available at Aetrix Electronics and suitable for industrial sensor nodes, medical wearables, automotive body controllers, and smart home hubs requiring stable component supply across multi-year production cycles.
Supply support for RM25C64C-LSNI-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Adesto Technologies (acquired by Dialog Semiconductor in 2020, now part of Renesas) specialized in ultra-low-power non-volatile memory solutions for IoT and edge devices.
The RM25C-Series was designed specifically for battery-operated endpoints needing fast, energy-efficient, high-endurance data storage - leveraging CBRAM® to overcome EEPROM and NOR flash limitations in write speed and energy.
FAQ
What is the maximum clock frequency supported by RM25C64C-LSNI-B in fast read mode?
The RM25C64C-LSNI-B supports up to 10 MHz SCK frequency in fast read mode (FREAD command, 0Bh), enabling high-throughput parameter retrieval. This is 6.25× faster than its 1.6 MHz normal read mode and significantly reduces host MCU wait time during boot or configuration loads. The device maintains timing compliance at 3.3V VCC with CL = 10 pF load.
Does RM25C64C-LSNI-B require an erase cycle before writing new data?
No, RM25C64C-LSNI-B does not require pre-erase due to its CBRAM® technology - it supports true byte-write and page-write directly. Unlike flash-based memories, each write operation modifies only targeted bits without erasing underlying sectors first. Page erase (PERS, 42h) and chip erase (CERS, 60h/C7h) are optional commands used only for bulk initialization or security reset.
How does the Write Protect (WP) pin function on RM25C64C-LSNI-B?
On RM25C64C-LSNI-B, the WP pin provides hardware-level protection for the Status Register when the SRWD bit is set to '1'. If WP is low and SRWD = 1, writes to BP0, BP1, LPSE, APDE, and SRWD are blocked - preventing accidental modification of block protection or power modes. When WP is high, the Status Register remains fully writable regardless of SRWD state.
What is the typical power consumption of RM25C64C-LSNI-B in Ultra-Deep Power Down mode?
In Ultra-Deep Power Down mode (activated via UDPD command, 79h), RM25C64C-LSNI-B draws just 1.6 µA typical at +25°C and 11 µA at +85°C. This is the lowest quiescent current among its power states and is achieved by disabling internal oscillators and bias circuits beyond standard Power Down mode - ideal for multi-year battery operation in maintenance-free sensors.
Can RM25C64C-LSNI-B be used with a 1.8V microcontroller SPI interface?
Yes, RM25C64C-LSNI-B is fully compatible with 1.8V SPI interfaces: its VIL and VIH thresholds scale with VCC (VIL ≤ 0.3×VCC, VIH ≥ 0.7×VCC), and it operates down to 1.65V. At 1.8V supply, input logic thresholds are ~0.54V (low) and ~1.26V (high), safely interfacing with standard 1.8V GPIOs without level shifters - confirmed in DC Characteristics Table 3.1.
RM25C64C-LSNI-B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- Mavriq™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- CBRAM®
- Technology:
- CBRAM
- Memory Size:
- 64Kbit
- Memory Organization:
- 32 Bytes Page Size
- Memory Interface:
- SPI
- Clock Frequency:
- 10 MHz
- Write Cycle Time - Word, Page:
- 100µs, 5ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
RM25C64C-LSNI-B FAQ
1.How can I place an order for RM25C64C-LSNI-B through Aetrix?
Please submit a Request for Quotation (RFQ) for RM25C64C-LSNI-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RM25C64C-LSNI-B reliable?
The price and inventory of RM25C64C-LSNI-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RM25C64C-LSNI-B is usually 5 days.
3.What payment methods are accepted for RM25C64C-LSNI-B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RM25C64C-LSNI-B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RM25C64C-LSNI-B?
RM25C64C-LSNI-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RM25C64C-LSNI-B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RM25C64C-LSNI-B?
For technical support, including RM25C64C-LSNI-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RM25C64C-LSNI-B requirements.
6.How does Aetrix verify that RM25C64C-LSNI-B is sourced from the original manufacturer or authorized distributors?
All RM25C64C-LSNI-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RM25C64C-LSNI-B meets industry standards.
7.What is the process for return or replacement of RM25C64C-LSNI-B?
All RM25C64C-LSNI-B units undergo pre-shipment inspection (PSI). If there is an issue with RM25C64C-LSNI-B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RM25C64C-LSNI-B part is unused and in its original packaging.
Return procedure for RM25C64C-LSNI-B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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