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Renesas RM25C64C-LSNI-T
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- Part No.:
- RM25C64C-LSNI-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
RM25C64C-LSNI-T.pdf
- Description:
- IC CBRAM 64KBIT SPI 10MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,403
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Product details
Overview
RM25C64C-LSNI-T from Adesto Technologies is a 64 Kbit non-volatile serial EEPROM memory IC based on CBRAM® resistive switching technology, operating from 1.65V to 3.6V supply and communicating via SPI interface (modes 0 and 3). It delivers 10 MHz fast read speed, 32-byte page write in 1 ms, and consumes only 50 nJ per byte write - enabling ultra-low-energy data logging in battery-powered IoT sensors.
For engineers reviewing the RM25C64C-LSNI-T datasheet, RM25C64C-LSNI-T pinout, RM25C64C-LSNI-T application, or RM25C64C-LSNI-T equivalent, this page provides verified technical context, validated pin functions, real-world use cases in constrained-power systems, and two confirmed alternative parts with documented functional and packaging differences.
Technical Context
The RM25C64C-LSNI-T implements a 4-wire SPI interface (CS, SDO, SDI, SCK) with hardware HOLD and WP pins for flow control and write protection. Its CBRAM® memory array supports both byte and page programming (1–32 bytes), self-timed erase/write cycles, and dual power-down modes - Ultra-Deep Power Down (1.6 µA typ.) and Auto Power Down (2.2 µA typ.).
It features an 8-bit status register with WIP/WEL flags, block protection bits (BP0/BP1), and configurable low-power enable bits (LPSE/APDE). The device uses MSB-first transmission, supports unlimited read cycles, and guarantees 100,000 write/erase cycles with 10-year data retention at -40°C to +85°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 64 Kbit (8 KB) non-volatile storage - sufficient for firmware patch storage or sensor calibration tables in edge nodes. |
| Supply voltage range | 1.65V–3.6V - compatible with single-cell Li-ion, coin-cell, and 3.3V logic rails without level shifting. |
| Fast read clock rate | 10 MHz - enables sub-100 µs access to 32-byte configuration blocks in real-time control loops. |
| Page write time | 1 ms (32-byte page) - 4–6× faster than conventional EEPROM, reducing host MCU blocking time. |
| Byte write energy | 50 nJ - 90% lower than comparable EEPROMs, critical for energy harvesting and battery lifetime extension. |
| Data retention | 10 years at +85°C - validated for industrial-grade deployment in uncooled enclosures. |
| Endurance | 100,000 write/erase cycles - meets JEDEC JESD22-A117B for mission-critical logging applications. |
| Power-down current | 2.2 µA (typ.) - allows multi-year operation on CR2032 batteries in maintenance-free sensor nodes. |
Pinout & Package
RM25C64C-LSNI-T is housed in an 8-lead SOIC package (SOIC-8, 150 mil width), RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS (Pin 1) | Chip Select | Active-low enable: pulls device out of standby; high-Z output when deasserted; required to initiate all commands. |
| SDO (Pin 2) | Serial Data Output | Tri-state output delivering read data or status bits on SCK falling edge; high-impedance when CS high. |
| WP (Pin 3) | Write Protect | Hardware lock for status register: protects BP0/BP1/SRWD bits when SRWD=1 and WP=low. |
| GND (Pin 4) | Ground reference | Primary return path for VCC and I/O; must be low-inductance connection to minimize noise during write cycles. |
| SDI (Pin 5) | Serial Data Input | Accepts opcodes, addresses, and data on SCK rising edge; latched synchronously to master clock. |
| SCK (Pin 6) | Serial Clock | Master-generated timing signal; supports modes 0 (SCK idle low) and 3 (SCK idle high); max 10 MHz in fast read. |
| HOLD (Pin 7) | Communication hold | Pauses ongoing SPI transfer without resetting state machine; allows host to service higher-priority interrupts. |
| VCC (Pin 8) | Power supply | 1.65–3.6V input; internal regulation ensures stable core voltage; requires local 100 nF ceramic decoupling. |
Key Features
| Feature | Design Value |
|---|---|
| CBRAM® resistive memory technology | Enables direct-write operation with no pre-erase, eliminating latency overhead and wear leveling complexity. |
| Ultra-low-energy byte write | 50 nJ per byte - reduces average power in periodic sensor logging by >90% vs. legacy EEPROM. |
| Dual low-power states | Ultra-Deep Power Down (1.6 µA) and Auto Power Down (2.2 µA) support duty-cycled wake-up architectures. |
| Flexible write protection | Combines hardware (WP pin + SRWD bit) and software (BP0/BP1 block bits) to safeguard critical configuration data. |
| 10 MHz fast read mode | Accelerates boot-time configuration loading and runtime parameter lookup in resource-constrained MCUs. |
| Self-timed page erase | Eliminates host timing dependencies: 32-byte page erase completes autonomously in <5 ms. |
Applications
| Smart Utility Metering | Wearable Health Sensors |
|---|---|
|
Use Scenario: Storing tariff schedules, meter calibration coefficients, and tamper-event logs in AMI meters deployed in outdoor substations. IC Role / Device Role / Timing Role: Non-volatile configuration and event log storage with guaranteed 10-year retention at 85°C ambient. Use Value: Eliminates need for external backup capacitors or supercaps due to sub-µA power-down current and instant write capability. |
Use Scenario: Recording ECG waveform metadata, sensor calibration offsets, and firmware update staging in disposable biosensors. IC Role / Device Role / Timing Role: Low-energy persistent storage interfaced directly to ARM Cortex-M0+ MCU via SPI. Use Value: 50 nJ byte write enables >10,000 log entries on a single CR2016 cell, extending product shelf life. |
| Industrial PLC I/O Modules | Asset Tracking Beacons |
|
Use Scenario: Holding module identification, channel scaling factors, and fault history in DIN-rail mounted I/O expanders. IC Role / Device Role / Timing Role: SPI-configurable EEPROM replacing legacy parallel EEPROMs in space-constrained PCB layouts. Use Value: 1 ms page write reduces configuration update time by 80% vs. 5 ms EEPROM alternatives, speeding commissioning. |
Use Scenario: Storing BLE advertising payloads, GPS fix timestamps, and motion-trigger counters in battery-powered GPS trackers. IC Role / Device Role / Timing Role: Energy-optimized non-volatile memory supporting intermittent wake-up and burst transmission. Use Value: Ultra-Deep Power Down mode cuts quiescent current to 1.6 µA, enabling 5+ year operation on AA cells. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial EEPROM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT25DF041A-SSHN-B | 4 Mbit NOR flash (not EEPROM); requires sector erase before write; 2.7–3.6V only; no HOLD pin. | Higher density but unsuitable for frequent byte updates; lacks hardware write protection and low-voltage operation. | Select only if block-oriented firmware storage is needed and 1.65V operation is not required. |
| FM25V05-G | 512 Kbit F-RAM; 2.0–3.6V; 40 MHz SPI; unlimited endurance; no write delay; but 3.5 µA standby current. | Superior write speed and endurance, yet higher active current and no Ultra-Deep Power Down mode. | Prefer for high-frequency logging (>1 kHz), but avoid where sub-2 µA sleep current is mandatory. |
Compared with AT25DF041A-SSHN-B and FM25V05-G, RM25C64C-LSNI-T uniquely balances ultra-low write energy (50 nJ), 1.65V compatibility, and 1.6 µA Ultra-Deep Power Down - making it optimal for battery-limited, byte-update-intensive edge devices where density is secondary to efficiency.
Availability
RM25C64C-LSNI-T is available at Aetrix Electronics and suitable for smart metering, wearable medical sensors, industrial I/O modules, and asset tracking beacons requiring stable component supply across extended product lifecycles.
Supply support for RM25C64C-LSNI-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Adesto Technologies (acquired by Dialog Semiconductor in 2020, now part of Renesas) specialized in ultra-low-power non-volatile memory solutions for IoT and industrial edge applications.
The RM25C-Series was designed specifically for energy-constrained systems needing reliable, byte-addressable, low-voltage serial memory - leveraging CBRAM® to eliminate erase-before-write overhead and reduce system-level power management complexity.
FAQ
What is the maximum SPI clock frequency supported by RM25C64C-LSNI-T in fast read mode?
The RM25C64C-LSNI-T supports up to 10 MHz SCK frequency in Fast Read mode (FREAD command, 0BH), enabling rapid sequential reads across its 8 KB memory array. This is 6.25× faster than its 1.6 MHz normal read mode and significantly accelerates configuration loading in microcontroller-based systems. The 10 MHz specification is valid across the full operating temperature range (-40°C to +85°C) and supply voltage (1.65V–3.6V).
Does RM25C64C-LSNI-T require an erase cycle before writing new data?
No, RM25C64C-LSNI-T does not require a separate erase cycle before writing. As a CBRAM®-based device, it supports direct-write operation: new data can be programmed into any location without prior erasure. This eliminates write latency overhead and simplifies firmware design compared to flash-based alternatives. Page or chip erase commands (PERS/CERS) are optional and used only to reset blocks to all-1 states.
How does the Write Protect (WP) pin function on RM25C64C-LSNI-T?
The WP pin on RM25C64C-LSNI-T provides hardware-level protection for the Status Register. When WP is low and the SRWD bit is set to '1', writes to the Status Register (including BP0/BP1 protection bits) are blocked. When WP is high, the Status Register remains fully writable regardless of SRWD state. This dual-layer mechanism prevents accidental corruption of memory protection settings during field operation.
What is the typical power consumption of RM25C64C-LSNI-T in Ultra-Deep Power Down mode?
In Ultra-Deep Power Down mode (activated via UDPD command, 79H), RM25C64C-LSNI-T draws just 1.6 µA typical current at 25°C and 3.3V VCC. This is the lowest quiescent current among its operational states and enables multi-year battery life in intermittently active devices like wireless sensors. Exit time from this mode is 70 µs (tXUDPD), ensuring rapid responsiveness upon wake-up.
Can RM25C64C-LSNI-T be used as a drop-in replacement for standard SPI EEPROMs?
RM25C64C-LSNI-T is pin-compatible and command-set compatible with standard SPI EEPROMs (e.g., Atmel AT25xxx, Microchip 25AAxxx) in SOIC-8 packages and supports identical SPI modes 0 and 3. However, it is not a functional drop-in replacement due to differences in timing (e.g., faster page write), power modes (Ultra-Deep Power Down), and CBRAM®-specific behavior (no erase-before-write). Firmware validation is required to leverage its full efficiency benefits.
RM25C64C-LSNI-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- Mavriq™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- CBRAM®
- Technology:
- CBRAM
- Memory Size:
- 64Kbit
- Memory Organization:
- 32 Bytes Page Size
- Memory Interface:
- SPI
- Clock Frequency:
- 10 MHz
- Write Cycle Time - Word, Page:
- 100µs, 5ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
RM25C64C-LSNI-T FAQ
1.How can I place an order for RM25C64C-LSNI-T through Aetrix?
Please submit a Request for Quotation (RFQ) for RM25C64C-LSNI-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RM25C64C-LSNI-T reliable?
The price and inventory of RM25C64C-LSNI-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RM25C64C-LSNI-T is usually 5 days.
3.What payment methods are accepted for RM25C64C-LSNI-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RM25C64C-LSNI-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RM25C64C-LSNI-T?
RM25C64C-LSNI-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RM25C64C-LSNI-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RM25C64C-LSNI-T?
For technical support, including RM25C64C-LSNI-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RM25C64C-LSNI-T requirements.
6.How does Aetrix verify that RM25C64C-LSNI-T is sourced from the original manufacturer or authorized distributors?
All RM25C64C-LSNI-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RM25C64C-LSNI-T meets industry standards.
7.What is the process for return or replacement of RM25C64C-LSNI-T?
All RM25C64C-LSNI-T units undergo pre-shipment inspection (PSI). If there is an issue with RM25C64C-LSNI-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RM25C64C-LSNI-T part is unused and in its original packaging.
Return procedure for RM25C64C-LSNI-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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