Renesas RMLV0408EGSB-4S2#HA0

Overview

RMLV0408EGSB-4S2#HA0 from Renesas Electronics is a 4Mb (524,288-word × 8-bit) low-power static RAM designed for battery-backed memory systems, operating from a single 2.7V–3.6V supply with 45ns max access time and 0.4µA typical standby current in TSOP (II) package.

For engineers reviewing the RMLV0408EGSB-4S2#HA0 datasheet, RMLV0408EGSB-4S2#HA0 pinout, RMLV0408EGSB-4S2#HA0 application, or RMLV0408EGSB-4S2#HA0 equivalent, key selection criteria include low-voltage data retention down to 1.5V, TTL-compatible I/O, three-state output control, and compatibility with embedded systems requiring stable, low-leakage SRAM for real-time data buffering and backup.

Technical Context

The RMLV0408EGSB-4S2#HA0 implements a fully decoded 19-bit address space (A0–A18) supporting 524,288 × 8-bit organization, with synchronous read/write cycles governed by CS#, WE#, and OE# control signals. Its architecture features common I/O pins with high-impedance tri-state output and direct TTL-level interface compliance across all inputs and outputs.

It supports battery backup operation via low-V_CC data retention mode (V_DR = 1.5V min), where chip select (CS#) enables retention state entry with sub-µA current draw. Timing is characterized across -40°C to +85°C, with equal 45ns read and write cycle times and guaranteed t_OE ≤ 22ns output enable delay.

Key Specifications

Pinout & Package

Package: 32-pin TSOP (II), 400-mil body, surface-mount, JEDEC standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the RMLV0408EGSB-4S2#HA0 uniquely balances 45ns speed, sub-µA standby, and 1.5V data retention in a pin-compatible TSOP (II) package-making it optimal for battery-critical, space-constrained embedded systems.

Availability

RMLV0408EGSB-4S2#HA0 is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, automotive telematics units, and POS terminal backup memory requiring stable component supply across extended product lifecycles.

Supply support for RMLV0408EGSB-4S2#HA0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.

The RMLV0408E Series was developed to deliver high-density, low-power SRAM for battery-backed systems where data integrity during power loss is mission-critical - targeting embedded control, instrumentation, and safety-critical edge devices.

FAQ

What is the minimum supply voltage required for data retention in RMLV0408EGSB-4S2#HA0?

The RMLV0408EGSB-4S2#HA0 maintains valid data down to 1.5V V_CC, as specified in the Low V_CC Data Retention Characteristics table. This is achieved when CS# is held high (≥ V_CC − 0.2V) and all other inputs are in high-impedance or valid logic states. At this voltage, typical data retention current is 0.4µA at 25°C, rising to 7µA at 85°C.

Does RMLV0408EGSB-4S2#HA0 support true 3.3V TTL-level signaling?

Yes, the RMLV0408EGSB-4S2#HA0 is directly TTL-compatible: VIH is defined as ≥2.2V (min) and VIL as ≤0.6V (max) across the full 2.7–3.6V V_CC range, meeting standard TTL input thresholds. Output levels (VOH ≥2.4V at -1mA, VOL ≤0.4V at 2.1mA) also satisfy TTL drive requirements, enabling direct connection to legacy 3.3V microcontrollers without level shifters.

What is the pin compatibility status of RMLV0408EGSB-4S2#HA0 with other members of the RMLV0408E Series?

RMLV0408EGSB-4S2#HA0 shares identical pinout and electrical specifications with all RMLV0408E Series variants in the same 32-pin TSOP (II) package, including RMLV0408EGSB-4S2#AA0. Differences are limited to packaging (tray vs. embossed tape) and screening - not functionality or pin mapping - allowing seamless substitution within the same package type.

How does the standby current of RMLV0408EGSB-4S2#HA0 vary with temperature?

RMLV0408EGSB-4S2#HA0 standby current (ISB1) increases with temperature: 0.4µA typical at 25°C, 3µA at 40°C, 5µA at 70°C, and 7µA at 85°C. This behavior is documented in the DC Characteristics table and reflects silicon leakage trends; design margins should use the 7µA worst-case value for 85°C battery-life calculations.

Can RMLV0408EGSB-4S2#HA0 be used in write-cycle modes where OE# is held low during writes?

Yes, the RMLV0408EGSB-4S2#HA0 supports Write Cycle (2) per the datasheet, where OE# is held low while WE# and CS# control write operations. In this mode, I/O pins remain active outputs during write, so external drivers must be disabled. The timing parameters t_OW (5ns) and t_WHZ (≤18ns) govern output disable after write completion.