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Renesas RMLV0408EGSB-4S2#HA1

Part No.:
RMLV0408EGSB-4S2#HA1
Manufacturer:
Renesas
Category:
Memory
Package:
32-SOIC (0.400", 10.16mm Width)
Datasheet:
AetrixRMLV0408EGSB-4S2#HA1.pdf
Description:
IC SRAM 4MBIT PARALLEL 32TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,000

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Product details

Overview

RMLV0408EGSB-4S2#HA1 from Renesas Electronics is a 4Mb advanced low-power static RAM organized as 524,288-word × 8-bit, operating from a single 2.7–3.6V supply, with 45ns max access time and 0.3µA typical standby current, designed for battery-backed memory applications in industrial control and portable instrumentation.

For engineers reviewing the RMLV0408EGSB-4S2#HA1 datasheet, RMLV0408EGSB-4S2#HA1 pinout, RMLV0408EGSB-4S2#HA1 application, or RMLV0408EGSB-4S2#HA1 equivalent, key selection criteria include TSOP (II) package compatibility, TTL-level I/O interface, low-voltage data retention down to 1.5V, and strict -40°C to +85°C industrial temperature operation.

Technical Context

The RMLV0408EGSB-4S2#HA1 implements a fully static memory architecture with asynchronous parallel interface, using address latching via A0–A18 inputs and bidirectional I/O0–I/O7 pins controlled by CS#, WE#, and OE# signals. It supports equal read/write cycle times (45ns) and features three-state outputs with direct TTL compatibility on all pins.

Its Advanced LPSRAM process enables ultra-low standby power (0.3µA typ.) while maintaining full SRAM functionality - no refresh required - and supports data retention at VCC as low as 1.5V when CS# is held high, making it suitable for nonvolatile backup during brownout or battery-switchover events.

Key Specifications

ParameterValue and Actual Design Meaning
Memory size4Mb (524,288 × 8-bit); provides sufficient buffer space for real-time data logging or firmware overlay in resource-constrained embedded systems.
Supply voltage2.7V to 3.6V; compatible with standard 3.3V logic rails and tolerant of Li-ion battery discharge profiles.
Access time45ns (max); enables reliable interfacing with microcontrollers running at ≤22 MHz without wait states.
Standby current0.3µA (typ.); extends battery life to years in always-on backup mode (e.g., RTC + configuration storage).
Data retention VCC1.5V min; guarantees data integrity during deep brownout or primary power loss before backup battery engages.
Operating temperature-40°C to +85°C; qualified for industrial-grade deployment in factory automation and outdoor telemetry units.
I/O interfaceCommon bidirectional data bus (I/O0–I/O7) with three-state control; simplifies PCB routing and reduces external bus transceiver count.

Pinout & Package

Package: 32-pin TSOP (II), 400-mil body width, surface-mount, JEDEC-standard footprint compatible with automated assembly.

Pin/TerminalCircuit RoleDesign Meaning
VCCPower supplyPrimary 2.7–3.6V supply rail; decoupling capacitor placement near this pin is critical for noise immunity during fast transitions.
VSSGroundSignal reference plane; must be connected to low-impedance ground plane to minimize read/write timing jitter.
A0–A18Address input19-bit address bus supporting full 524,288-word addressing; no internal address multiplexing required.
I/O0–I/O7Data input/outputBidirectional 8-bit data path; high-impedance state activated by CS# high or OE# high to prevent bus contention.
CS#Chip selectActive-low enable controlling all internal buffers; high state forces full standby mode with 0.3µA current draw.
WE#Write enableActive-low write strobe; must overlap with active CS# to initiate write; determines data capture edge timing.
OE#Output enableActive-low control for output drivers only; allows read operations while preserving write capability during shared bus arbitration.

Key Features

FeatureDesign Value
Single-supply 3V operationEliminates need for dual-rail regulators or level shifters in 3.3V system designs, reducing BOM cost and board area.
45ns access with equal cycle timingEnables deterministic memory timing in hard real-time systems without dynamic wait-state insertion logic.
0.3µA typical standby currentSupports >10-year battery life in coin-cell–powered backup applications (e.g., SRAM + RTC modules).
1.5V data retention thresholdPermits seamless handoff from main supply to backup battery without data loss during voltage sag below 2.7V.
TTL-compatible I/O levelsDirect connection to legacy microcontrollers (e.g., 8051, PIC18, ARM7) without external level translation circuitry.

Applications

Industrial PLC Data BufferMedical Device Configuration Storage

Use Scenario: Storing runtime I/O state and alarm history in programmable logic controllers during mains power interruption.

IC Role / Device Role / Timing Role: Nonvolatile backup memory holding critical process data until AC power resumes or battery backup engages.

Use Value: Guarantees zero data loss during brownouts via 1.5V data retention and sub-µA standby draw, meeting IEC 61131-2 reliability requirements.

Use Scenario: Preserving calibration coefficients, patient settings, and last-known vital sign snapshots in portable ECG monitors.

IC Role / Device Role / Timing Role: Low-power SRAM retaining configuration across sleep/wake cycles and battery swaps.

Use Value: Enables instant device restart with full user context preserved, supported by 0.3µA standby current and -40°C to +85°C qualification.

Automotive Telematics Event LogSmart Meter Firmware Overlay

Use Scenario: Capturing GPS position, CAN bus fault codes, and crash-triggered diagnostics in vehicle black box recorders.

IC Role / Device Role / Timing Role: High-speed parallel buffer accepting burst writes from microcontroller DMA engines during transient events.

Use Value: 45ns access time ensures no event data loss at 22 MHz bus clock rates; TSOP (II) package withstands automotive thermal cycling.

Use Scenario: Hosting field-upgradable firmware segments in utility smart meters where flash endurance is limited.

IC Role / Device Role / Timing Role: Executable code cache enabling fast over-the-air updates without interrupting metering accuracy.

Use Value: 4Mb capacity accommodates dual-bank firmware images; 32-pin TSOP (II) footprint fits constrained meter PCB layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV25616AL-10TLI256K × 16-bit organization (512Kb), 10ns access, 3.3V-only supply (3.0–3.6V), 32-pin TSOP (II)Higher density per byte but wider bus; requires 16-bit data path and lacks 1.5V data retention capabilitySelect when system uses 16-bit microcontroller bus and prioritizes speed over ultra-low standby current
AS6C4008-55ZIN4Mb × 8-bit, 55ns access, 2.7–3.6V, 32-pin SOP; higher standby current (1µA typ.) and no specified low-VCC retentionSame memory map and voltage range but slower timing and less robust battery backup behaviorSelect when SOP package is preferred for through-hole prototyping or legacy rework, accepting reduced retention margin

Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the RMLV0408EGSB-4S2#HA1 uniquely balances 45ns speed, 0.3µA standby, and 1.5V data retention in a TSOP (II) package - critical for industrial battery-backed systems where both performance and energy efficiency are non-negotiable.

Availability

RMLV0408EGSB-4S2#HA1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device configuration storage, and automotive telematics event logging requiring stable component supply across extended product lifecycles.

Supply support for RMLV0408EGSB-4S2#HA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The RMLV0408E Series was developed to deliver high-density, low-power static RAM for battery-critical embedded systems - emphasizing data integrity during power transitions and long-term reliability in harsh environments.

FAQ

What is the maximum access time specification for RMLV0408EGSB-4S2#HA1?

The RMLV0408EGSB-4S2#HA1 has a maximum access time of 45ns under all operating conditions (VCC = 2.7–3.6V, Ta = −40°C to +85°C). This value is guaranteed across temperature and voltage ranges and defines the worst-case delay from address valid to valid data appearing on I/O0–I/O7 during read operations. The RMLV0408EGSB-4S2#HA1 achieves this timing without requiring external wait-state generation in most 3.3V microcontroller interfaces.

Does RMLV0408EGSB-4S2#HA1 support true data retention during power loss?

Yes, the RMLV0408EGSB-4S2#HA1 supports guaranteed data retention down to VCC = 1.5V when CS# is held high, with typical retention current of 0.3µA at +25°C. This feature enables seamless transition to backup power sources such as coin cells or supercapacitors. The RMLV0408EGSB-4S2#HA1 does not require external circuitry to enter or maintain retention mode - it is controlled solely by CS# assertion and VCC level.

What package type is used for RMLV0408EGSB-4S2#HA1?

The RMLV0408EGSB-4S2#HA1 is packaged in a 32-pin TSOP (II) with 400-mil body width, conforming to JEDEC MO-141BA standards. Its lead pitch is 0.5mm, and it is optimized for high-density surface-mount assembly. This package differs from the sTSOP and SOP variants in the RMLV0408E family and is not pin-compatible with them despite identical pin count and function mapping.

Is RMLV0408EGSB-4S2#HA1 compatible with TTL-level logic interfaces?

Yes, the RMLV0408EGSB-4S2#HA1 is directly TTL-compatible: VIH = 2.2V min and VIL = 0.6V max ensure reliable recognition of standard 3.3V logic highs and lows, and VOH ≥ 2.4V (at IOH = −1mA) and VOL ≤ 0.4V (at IOL = 2.1mA) guarantee clean drive into TTL inputs. All control (CS#, WE#, OE#) and data (I/O0–I/O7) pins meet these specifications, eliminating need for level shifters when interfacing with legacy 3.3V microcontrollers.

What is the standby current consumption of RMLV0408EGSB-4S2#HA1 at +85°C?

At +85°C, the RMLV0408EGSB-4S2#HA1 exhibits a maximum standby current (ISB1) of 7µA, with typical value of 5µA. This is measured with CS# ≥ VCC−0.2V and all other inputs at valid logic levels. The RMLV0408EGSB-4S2#HA1 maintains ultra-low power behavior across its full industrial temperature range, making it suitable for thermally demanding deployments such as motor control cabinets or outdoor base stations.

RMLV0408EGSB-4S2#HA1 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
32-SOIC (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
4Mbit
Memory Organization:
512K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-TSOP II

RMLV0408EGSB-4S2#HA1 FAQ

1.How can I place an order for RMLV0408EGSB-4S2#HA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for RMLV0408EGSB-4S2#HA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RMLV0408EGSB-4S2#HA1 reliable?

The price and inventory of RMLV0408EGSB-4S2#HA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0408EGSB-4S2#HA1 is usually 5 days.

3.What payment methods are accepted for RMLV0408EGSB-4S2#HA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV0408EGSB-4S2#HA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RMLV0408EGSB-4S2#HA1?

RMLV0408EGSB-4S2#HA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RMLV0408EGSB-4S2#HA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RMLV0408EGSB-4S2#HA1?

For technical support, including RMLV0408EGSB-4S2#HA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0408EGSB-4S2#HA1 requirements.

6.How does Aetrix verify that RMLV0408EGSB-4S2#HA1 is sourced from the original manufacturer or authorized distributors?

All RMLV0408EGSB-4S2#HA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0408EGSB-4S2#HA1 meets industry standards.

7.What is the process for return or replacement of RMLV0408EGSB-4S2#HA1?

All RMLV0408EGSB-4S2#HA1 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0408EGSB-4S2#HA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RMLV0408EGSB-4S2#HA1 part is unused and in its original packaging.

Return procedure for RMLV0408EGSB-4S2#HA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RMLV0408EGSB-4S2#HA1 Tags

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