Renesas RMLV0408EGSP-4S2#CA1

Overview

RMLV0408EGSP-4S2#CA1 from Renesas Electronics is a 4Mb Advanced LPSRAM organized as 524,288-word × 8-bit, operating from a single 2.7–3.6V supply with 45ns max access time and 0.3µA typical standby current, enabling ultra-low-power battery backup operation in embedded control and portable instrumentation systems.

For engineers reviewing the RMLV0408EGSP-4S2#CA1 datasheet, RMLV0408EGSP-4S2#CA1 pinout, RMLV0408EGSP-4S2#CA1 application, or RMLV0408EGSP-4S2#CA1 equivalent, key selection criteria include its 32-pin SOP package, TTL-compatible I/O, common data bus architecture, and verified low-voltage data retention down to 1.5V.

Technical Context

The RMLV0408EGSP-4S2#CA1 implements a fully static memory cell array with asynchronous parallel interface logic, supporting independent read/write cycles without internal refresh. Its address decoding uses a 19-bit input (A0–A18) to access the full 524,288-word matrix, with three-state bidirectional I/O0–I/O7 lines controlled by CS#, WE#, and OE#.

It features dual-mode power management: active operation draws ≤10mA at 45ns cycle, while chip-select-driven standby reduces current to ≤0.3µA at +25°C - validated for data retention at VCC ≥1.5V when CS# is held high, making it suitable for nonvolatile SRAM replacement in legacy systems.

Key Specifications

Pinout & Package

Package: 525-mil 32-pin plastic SOP (Small Outline Package), surface-mount, lead-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power static RAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the RMLV0408EGSP-4S2#CA1 uniquely balances 45ns performance, 0.3µA standby, and 32-pin SOP compatibility - making it optimal for battery-constrained systems requiring deterministic timing and long-term data retention without layout changes.

Availability

RMLV0408EGSP-4S2#CA1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical monitoring, automotive telematics logging, and avionics power-fail recording requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for RMLV0408EGSP-4S2#CA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The RMLV0408E Series was designed specifically for battery-backed, low-power embedded systems requiring reliable static RAM with extended data retention at reduced supply voltages - targeting portable instrumentation, safety-critical logging, and legacy system modernization.

FAQ

What is the maximum operating temperature range for RMLV0408EGSP-4S2#CA1?

The RMLV0408EGSP-4S2#CA1 is rated for operation from –40°C to +85°C, as confirmed in the Absolute Maximum Ratings and DC Operating Conditions sections of the R10DS0206EJ0300 datasheet. This extended industrial temperature range supports deployment in automotive engine compartments, factory-floor controllers, and outdoor medical equipment where ambient thermal stress is significant. The RMLV0408EGSP-4S2#CA1 maintains specified standby current and access timing across this full range.

Does RMLV0408EGSP-4S2#CA1 support true static operation without refresh cycles?

Yes, the RMLV0408EGSP-4S2#CA1 is a fully static RAM - it requires no refresh cycles, clock input, or periodic access to retain data. Its Advanced LPSRAM cell design holds state indefinitely as long as VCC remains within specification and CS# is asserted (low) during active use or held high for standby. This eliminates firmware overhead and timing constraints associated with DRAM or pseudo-SRAM solutions. The RMLV0408EGSP-4S2#CA1 delivers deterministic behavior in real-time systems.

Can RMLV0408EGSP-4S2#CA1 retain data at 1.8V supply voltage?

Yes - the RMLV0408EGSP-4S2#CA1 guarantees data retention down to VCC = 1.5V when CS# is held high, as specified in the Low VCC Data Retention Characteristics table. At 1.8V, retention is robust and validated across temperature; typical data retention current (ICCDR) is 0.3µA at +25°C and rises to 7µA at +85°C. This allows integration with single-cell Li-ion or LiFePO₄ backup sources without regulation. The RMLV0408EGSP-4S2#CA1 does not require external capacitors for hold-up time.

Is RMLV0408EGSP-4S2#CA1 pin-compatible with other members of the RMLV0408E Series?

Yes - all RMLV0408E Series variants, including RMLV0408EGSP-4S2#CA1 (32-pin SOP), RMLV0408EGSA-4S2#AA1 (32-pin sTSOP), and RMLV0408EGSB-4S2#AA1 (32-pin TSOP-II), share identical pin functions and electrical characteristics. Only the mechanical package differs; signal mapping, timing, and DC specs are fully aligned per the family datasheet R10DS0206EJ0300. The RMLV0408EGSP-4S2#CA1 may be substituted in SOP-based designs without logic or timing revalidation.

What is the minimum write pulse width required for reliable operation of RMLV0408EGSP-4S2#CA1?

The minimum write pulse width (tWP) for the RMLV0408EGSP-4S2#CA1 is 35ns, as defined in the AC Characteristics table under Write Cycle parameters. This value applies across the full operating voltage (2.7–3.6V) and temperature (–40°C to +85°C) range. To ensure robust writes, the overlap window between active-low CS# and WE# must be ≥35ns, with address valid ≥35ns before WE# falls. The RMLV0408EGSP-4S2#CA1 tolerates zero setup/hold margins (tAS = tDH = 0ns), simplifying timing closure in FPGA- or MCU-driven interfaces.