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Renesas RMLV0414EGSB-4S2#AA0
- Part No.:
- RMLV0414EGSB-4S2#AA0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
RMLV0414EGSB-4S2#AA0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,463
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Product details
Overview
RMLV0414EGSB-4S2#AA0 from Renesas Electronics is a 4Mb Advanced LPSRAM organized as 262,144-word × 16-bit, operating on a single 2.7V–3.6V supply with 45ns max access time and 0.4µA typical standby current. It supports battery backup operation and features byte-selectable read/write via LB#/UB# control in a 44-pin TSOP (II) package, used in embedded systems requiring low-power non-volatile data retention.
For engineers reviewing the RMLV0414EGSB-4S2#AA0 datasheet, RMLV0414EGSB-4S2#AA0 pinout, RMLV0414EGSB-4S2#AA0 application, or RMLV0414EGSB-4S2#AA0 equivalent, key selection criteria include its 45ns access timing, 0.4µA standby current at +25°C, TTL-compatible I/O, and dual-byte write capability for memory-constrained industrial controllers and portable instrumentation.
Technical Context
This static RAM implements a synchronous, common I/O architecture with independent upper and lower byte enables (UB#, LB#), enabling partial-word writes without external bus transceivers. Its control logic decodes CS#, OE#, and WE# to manage three-state output, high-impedance hold, and data retention modes under low VCC (down to 1.5V).
The device uses Renesas's Advanced LPSRAM process to achieve equal access and cycle times (tRC = tAA = 45ns), direct TTL compatibility on all pins, and data retention at VCC ≥ 1.5V when CS# or both LB#/UB# are held inactive-critical for battery-backed real-time clock and configuration storage subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4Mb (262,144 × 16-bit); supports 16-bit parallel data interface without external multiplexing. |
| Access time | 45ns max; ensures compatibility with 22 MHz bus clocks in legacy microcontroller interfaces. |
| Supply voltage | 2.7V–3.6V single supply; eliminates need for dual-rail regulators in 3.3V systems. |
| Standby current | 0.4µA typ. at +25°C; enables multi-year battery life in always-on backup memory applications. |
| Data retention VCC | 1.5V min; maintains SRAM contents during brown-out or battery-switchover events. |
| I/O interface | Common bidirectional data bus (I/O0–I/O15) with three-state control; reduces PCB trace count vs. separate DQ/DQ̅. |
| Byte control | Independent LB# and UB# enables; allows 8-bit sub-word writes without disturbing adjacent bytes. |
Pinout & Package
Package: 44-pin TSOP (II), 400-mil body width, surface-mount, JEDEC standard footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power supply | Primary 2.7–3.6V supply rail; requires local 100nF decoupling per datasheet layout guidelines. |
| VSS | Ground | Signal and power ground reference; must be connected to low-impedance PCB plane. |
| A0–A17 | Address input | 18-bit address bus supporting full 262,144-word addressing; A0–A17 mapped directly to internal row/column decode. |
| I/O0–I/O15 | Data input/output | Bidirectional 16-bit data bus; high-impedance when CS#, OE#, or byte enables inactive. |
| CS# | Chip select | Active-low enable controlling all internal buffers; primary signal for entering data retention mode when high. |
| OE# | Output enable | Active-low control for output drivers only; does not affect address or write logic when asserted. |
| WE# | Write enable | Active-low strobe initiating write cycles; must overlap with active CS# and at least one byte enable. |
| LB#, UB# | Byte select | Independent active-low enables for lower (I/O0–I/O7) and upper (I/O8–I/O15) bytes; support partial writes. |
| NC | No connection | Pin 44 is unconnected; must remain floating or tied to VSS per PCB design rules. |
Key Features
| Feature | Design Value |
|---|---|
| Low-power standby | 0.4µA typical current at +25°C enables decade-scale coin-cell backup in portable devices. |
| Direct TTL compatibility | All inputs and outputs meet TTL voltage thresholds (VIH ≥ 2.2V, VOL ≤ 0.4V), eliminating level-shifter requirements. |
| Equal access/cycle timing | tAA = tRC = 45ns simplifies timing budgeting in fixed-frequency bus designs without wait-state insertion. |
| Battery backup operation | Guaranteed data retention down to 1.5V VCC with automatic entry into low-current mode when CS# or LB#/UB# inactive. |
| Three-state output control | Independent OE# and byte enables allow selective bus sharing among multiple peripherals without external logic. |
Applications
| Industrial PLC Data Buffer | Medical Device Configuration Storage |
|---|---|
Use Scenario: Storing runtime I/O state and calibration tables in programmable logic controllers with intermittent power loss. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding critical operational parameters during AC dropout or battery switchover. Use Value: 0.4µA standby current and 1.5V data retention threshold ensure >5-year backup life on CR2032 cells without refresh circuitry. | Use Scenario: Retaining user-configured therapy settings and sensor calibration offsets in portable infusion pumps. IC Role / Device Role / Timing Role: Battery-backed SRAM providing instant-access parameter storage between power cycles and firmware updates. Use Value: 45ns access time meets real-time response requirements for safety-critical alarm and dosage calculation subsystems. |
| Automotive Telematics Log Buffer | Test Equipment Firmware Patch Cache |
Use Scenario: Caching GPS position logs and CAN bus diagnostic snapshots in vehicle black-box recorders. IC Role / Device Role / Timing Role: High-reliability SRAM interfacing directly to microcontroller's external memory bus for burst logging. Use Value: Dual-byte write (LB#/UB#) enables efficient 8-bit status flag updates without overwriting adjacent 16-bit log entries. | Use Scenario: Holding field-upgradable firmware patches in automated test equipment during power-down sequences. IC Role / Device Role / Timing Role: Fast-access scratchpad memory for patch code staging prior to flash programming. Use Value: TTL-compatible I/O and 2.7–3.6V operation eliminate level translation, reducing BOM cost and board space in legacy 3.3V test platforms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10ns access time, 3.3V only (3.0–3.6V), 256K×16 organization (2Mb), 25ns cycle time | Higher speed but smaller capacity; suited for latency-critical cache, not long-term backup | Select when system clock > 33 MHz and capacity < 2Mb suffices; verify thermal derating for industrial temp range. |
| AS6C4008-55ZIN | 55ns access, 2.7–5.5V supply, 256K×16 (2Mb), 10µA standby current at +25°C | Wider voltage range but 25× higher standby current; unsuitable for multi-year battery operation | Choose only if 5V legacy compatibility is mandatory and backup duration < 6 months is acceptable. |
Compared with RMLV0414EGSB-4S2#AA0, IS61LV25616AL-10TLI offers faster access but half the density and no low-VCC retention, while AS6C4008-55ZIN supports 5V systems but consumes too much current for battery backup-making RMLV0414EGSB-4S2#AA0 optimal for 3.3V, long-life, 4Mb embedded storage.
Availability
RMLV0414EGSB-4S2#AA0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device configuration storage, and automotive telematics log buffering requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for RMLV0414EGSB-4S2#AA0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The RMLV0414E Series was designed specifically for low-power, battery-backed memory applications in space-constrained embedded systems where data integrity during power interruption is critical.
FAQ
What is the minimum supply voltage required to retain data in RMLV0414EGSB-4S2#AA0?
The RMLV0414EGSB-4S2#AA0 guarantees data retention down to 1.5V VCC when CS# is held high or both LB# and UB# are held high, as confirmed in the Low VCC Data Retention Characteristics table on page 12 of the R10DS0216EJ0200 datasheet. This mode draws only 0.4µA typical current at +25°C, enabling reliable operation during brown-out conditions or battery switchover without external supervision circuitry.
Does RMLV0414EGSB-4S2#AA0 support true 16-bit parallel access without multiplexing?
Yes, the RMLV0414EGSB-4S2#AA0 provides native 16-bit parallel access via dedicated I/O0–I/O15 pins with no address/data multiplexing. Its 262,144-word × 16-bit organization maps directly to an 18-bit address bus (A0–A17), allowing full-word reads/writes in a single cycle-confirmed by the Block Diagram on page 3 and Operation Table on page 3 of the R10DS0216EJ0200 datasheet.
How does byte-select functionality work on RMLV0414EGSB-4S2#AA0?
RMLV0414EGSB-4S2#AA0 uses independent active-low LB# (pins 39–40) and UB# (pin 38) signals to enable lower-byte (I/O0–I/O7) or upper-byte (I/O8–I/O15) writes without affecting the opposite byte. As shown in the Operation Table on page 3, asserting only LB# performs an 8-bit write to the lower byte while leaving upper-byte contents unchanged-eliminating need for read-modify-write sequences in partial-word updates.
Is RMLV0414EGSB-4S2#AA0 compatible with standard TTL logic levels?
Yes, the RMLV0414EGSB-4S2#AA0 is fully TTL-compatible: VIH is specified at 2.2V min (up to VCC+0.3V), VIL at 0.6V max, VOH at 2.4V min (IOH = –1mA), and VOL at 0.4V max (IOL = 2mA). These values-listed in the DC Operating Conditions table on page 4-allow direct interfacing with legacy 3.3V or 5V TTL microcontrollers without level-shifting components.
What is the maximum operating temperature range for RMLV0414EGSB-4S2#AA0?
The RMLV0414EGSB-4S2#AA0 is rated for industrial temperature operation from –40°C to +85°C, as explicitly stated in the "Orderable part number information" table on page 1 and confirmed in the Absolute Maximum Ratings table on page 4 of the R10DS0216EJ0200 datasheet. This range applies to both functional operation and data retention under specified voltage and timing conditions.
RMLV0414EGSB-4S2#AA0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
RMLV0414EGSB-4S2#AA0 FAQ
1.How can I place an order for RMLV0414EGSB-4S2#AA0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV0414EGSB-4S2#AA0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV0414EGSB-4S2#AA0 reliable?
The price and inventory of RMLV0414EGSB-4S2#AA0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0414EGSB-4S2#AA0 is usually 5 days.
3.What payment methods are accepted for RMLV0414EGSB-4S2#AA0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV0414EGSB-4S2#AA0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMLV0414EGSB-4S2#AA0?
RMLV0414EGSB-4S2#AA0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMLV0414EGSB-4S2#AA0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMLV0414EGSB-4S2#AA0?
For technical support, including RMLV0414EGSB-4S2#AA0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0414EGSB-4S2#AA0 requirements.
6.How does Aetrix verify that RMLV0414EGSB-4S2#AA0 is sourced from the original manufacturer or authorized distributors?
All RMLV0414EGSB-4S2#AA0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0414EGSB-4S2#AA0 meets industry standards.
7.What is the process for return or replacement of RMLV0414EGSB-4S2#AA0?
All RMLV0414EGSB-4S2#AA0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0414EGSB-4S2#AA0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV0414EGSB-4S2#AA0 part is unused and in its original packaging.
Return procedure for RMLV0414EGSB-4S2#AA0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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