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Renesas RMLV0414EGSB-4S2#AA1

Part No.:
RMLV0414EGSB-4S2#AA1
Manufacturer:
Renesas
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixRMLV0414EGSB-4S2#AA1.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,863

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Product details

Overview

RMLV0414EGSB-4S2#AA1 from Renesas Electronics is a 4Mb advanced low-power static RAM organized as 262,144 words × 16 bits, operating from a single 2.7–3.6V supply with 45ns max access time and 0.3µA typical standby current, deployed in battery-backed industrial control and portable instrumentation memory buffers.

For engineers reviewing the RMLV0414EGSB-4S2#AA1 datasheet, RMLV0414EGSB-4S2#AA1 pinout, RMLV0414EGSB-4S2#AA1 application, or RMLV0414EGSB-4S2#AA1 equivalent, key selection criteria include TSOP (II) package compatibility, byte-selectable 16-bit I/O interface, low-voltage data retention down to 1.5V, and TTL-compatible timing margins for legacy microcontroller bus interfacing.

Technical Context

This device implements a fully asynchronous SRAM architecture with independent upper/lower byte enable (UB#/LB#) and three-state bidirectional I/Os, supporting simultaneous read/write operations only within selected byte lanes. Its control logic decodes CS#, OE#, and WE# in conjunction with LB#/UB# to manage output impedance, data direction, and internal address latching without clock dependency.

The memory matrix uses a 2,048 × 2,048 row/column organization with distributed decoding across A0–A17, enabling deterministic access timing across temperature (−40°C to +85°C) and supply (2.7–3.6V). Data retention mode activates when CS# ≥ VCC−0.2V or LB#/UB# ≥ VCC−0.2V, sustaining stored data at VCC as low as 1.5V with ICCDR ≤ 7µA at +85°C.

Key Specifications

ParameterValue and Actual Design Meaning
Memory size4Mb (262,144 × 16-bit) - supports 64KB of word-aligned data storage for embedded firmware buffers or real-time data logging.
Access time45ns max - ensures compatibility with 22 MHz microcontroller buses without wait states.
Supply voltage2.7V to 3.6V - matches standard 3.3V system rails and enables direct connection to Li-ion backup sources.
Standby current0.3µA typ. at +25°C - extends battery life beyond 10 years in always-on monitoring systems.
Data retention VCC1.5V min - maintains memory contents during brown-out or backup switchover without external supervision.
I/O interfaceCommon 16-bit bidirectional bus with UB#/LB# - eliminates need for external byte demux logic in 8-bit peripheral interfaces.
Output driveVOH = 2.4V @ −1mA, VOL = 0.4V @ 2mA - meets TTL input thresholds and drives 500Ω loads per AC test condition.

Pinout & Package

Package: 44-pin TSOP (II), 400-mil body width, surface-mount, JEDEC MO-141 compliant.

Pin/TerminalCircuit RoleDesign Meaning
VCCPower supplyPrimary 2.7–3.6V supply rail; decoupling required within 10mm for stable 45ns operation.
VSSGroundDedicated ground reference for all I/O and core logic; requires low-inductance connection to system GND plane.
A0–A17Address input18-bit address bus supporting full 262k-word addressing; no internal address latching-tAS = 0ns simplifies timing.
I/O0–I/O15Data input/outputBidirectional 16-bit data bus with three-state control; shared pins reduce PCB trace count vs. separate DQ/DQ̅.
CS#Chip selectActive-low global enable; asserts internal buffers and initiates access cycle-tACS = 45ns defines chip-level latency.
OE#Output enableActive-low read gate; controls I/O pin direction and output driver activation-tOE = 22ns defines data valid window.
WE#Write enableActive-low write strobe; samples data on falling edge with tDW = 25ns setup for reliable capture.
LB#/UB#Byte selectIndependent active-low enables for lower/upper 8-bit lanes; allows partial writes without masking logic.
NCNo connectionUnbonded pin; must remain unconnected and unstubbed to avoid parasitic coupling or EMI.

Key Features

FeatureDesign Value
Single 3V supply operationEliminates dual-rail regulators and level shifters in 3.3V systems, reducing BOM cost and board area by ~15%.
Byte-selectable 16-bit I/OEnables efficient 8-bit microcontroller interfacing without external multiplexing or data alignment logic.
0.3µA standby currentSupports >10-year battery life in tamper-detection circuits and smart meter backup memory applications.
1.5V data retention thresholdPermits seamless transition to backup power during main supply failure without data loss or controller intervention.
TTL-compatible inputs/outputsDirect connection to legacy 5V-tolerant microcontrollers without external voltage translation circuitry.

Applications

Industrial PLC Data BufferPortable Medical Instrument Memory

Use Scenario: Storing real-time sensor acquisition buffers and configuration parameters in programmable logic controllers with extended power-loss immunity.

IC Role / Device Role / Timing Role: Asynchronous SRAM buffer providing nonvolatile shadow storage during mains interruption, synchronized via CS#/WE# handshaking with ARM Cortex-M4 host.

Use Value: 45ns access enables full-speed DMA transfers from ADC peripherals; 0.3µA ISB extends supercapacitor hold-up time from 20s to >90s at 3.3V.

Use Scenario: Retaining calibration coefficients and last-measurement history in handheld ECG monitors powered by coin-cell batteries.

IC Role / Device Role / Timing Role: Low-power data retention memory holding critical patient data during sleep mode, activated only during measurement bursts.

Use Value: 1.5V VDR allows continued data integrity down to end-of-battery voltage; 7µA ISB1 at +85°C ensures 5+ year shelf life without refresh cycles.

Automotive Telematics Log StorageNetwork Edge Router Packet Buffer

Use Scenario: Caching GPS position logs and CAN bus diagnostic snapshots in vehicle telematics units operating across −40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Temperature-stable SRAM acting as circular buffer for crash-event pre-trigger data, accessed via SPI-to-parallel bridge IC.

Use Value: Guaranteed 45ns tRC across full temp range eliminates timing margin derating; TSOP (II) package withstands automotive thermal cycling per AEC-Q200.

Use Scenario: Temporary packet buffering in IEEE 802.3af PoE-powered network switches where space and power are constrained.

IC Role / Device Role / Timing Role: High-speed parallel memory interfaced to FPGA-based packet engine, using LB#/UB# for header/payload separation.

Use Value: Equal tRC/tAA/tWC simplifies timing closure in FPGA logic; 10pF CI/O minimizes signal integrity degradation at 22MHz bus rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV25616AL-10TLI10ns access time, 3.3V only (3.135–3.465V), 44-pin TSOP (II), 256K × 16-bit (4Mb same density)Higher speed but narrower VCC range; lacks 1.5V data retention capabilitySelect for systems requiring sub-10ns latency and stable 3.3V rails, not battery backup operation.
AS6C4008-55PCN55ns access, 2.7–3.6V, 44-pin SOJ, 256K × 16-bit, 1µA ISB typ.Slower but identical voltage range and retention; SOJ package incompatible with TSOP footprintChoose only if SOJ mounting is acceptable and 55ns timing satisfies system requirements.

Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, RMLV0414EGSB-4S2#AA1 uniquely balances 45ns performance, ultra-low 0.3µA standby, and 1.5V data retention in a drop-in TSOP (II) package-making it optimal for battery-critical industrial and medical designs where reliability trumps raw speed.

Availability

RMLV0414EGSB-4S2#AA1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical instrument memory, automotive telematics log storage, and network edge router packet buffering requiring stable component supply across extended temperature and long-life battery operation.

Supply support for RMLV0414EGSB-4S2#AA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The RMLV0414E Series targets low-power, high-reliability embedded memory applications requiring extended data retention, wide temperature operation, and direct TTL compatibility-designed specifically for battery-backed instrumentation and mission-critical control systems.

FAQ

What is the minimum supply voltage required for data retention in RMLV0414EGSB-4S2#AA1?

The RMLV0414EGSB-4S2#AA1 guarantees data retention down to 1.5V (VDR), provided CS# ≥ VCC−0.2V or LB#/UB# ≥ VCC−0.2V. This allows uninterrupted memory operation during brown-out conditions or backup power transitions without external supervision-verified per page 12 of R10DS0216EJ0300 Rev.3.00.

Does RMLV0414EGSB-4S2#AA1 support true 8-bit access without external logic?

Yes, RMLV0414EGSB-4S2#AA1 supports native 8-bit access via dedicated LB# (I/O0–I/O7) and UB# (I/O8–I/O15) controls. When LB# is asserted low and UB# high, only the lower byte is enabled; asserting UB# low and LB# high enables the upper byte-eliminating need for external byte demux or data masking circuitry.

What is the maximum operating current of RMLV0414EGSB-4S2#AA1 during active read cycles?

The RMLV0414EGSB-4S2#AA1 draws up to 25mA average operating current (ICC2) under worst-case conditions: 45ns cycle time, 100% duty, and CS# = VIL. This value is measured with all I/O pins unloaded (II/O = 0mA) and reflects peak dynamic power consumption during sustained high-speed access.

Is RMLV0414EGSB-4S2#AA1 pin-compatible with standard 44-pin TSOP (II) footprints?

Yes, RMLV0414EGSB-4S2#AA1 uses a JEDEC MO-141 compliant 44-pin TSOP (II) package with 400-mil body width and 0.8mm lead pitch. Pin assignments match industry-standard 44-pin TSOP (II) SRAM layouts-including VCC/VSS placement, address/data ordering, and control signal positions-enabling direct PCB footprint reuse.

How does the standby current of RMLV0414EGSB-4S2#AA1 vary with temperature?

RMLV0414EGSB-4S2#AA1 standby current (ISB1) increases with temperature: 0.3µA typ. at +25°C, 3µA at +40°C, 5µA at +70°C, and 7µA at +85°C. This behavior is specified in Table "DC Characteristics" on page 4 of R10DS0216EJ0300 Rev.3.00 and reflects leakage growth in advanced LPSRAM process technology.

RMLV0414EGSB-4S2#AA1 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

RMLV0414EGSB-4S2#AA1 FAQ

1.How can I place an order for RMLV0414EGSB-4S2#AA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for RMLV0414EGSB-4S2#AA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RMLV0414EGSB-4S2#AA1 reliable?

The price and inventory of RMLV0414EGSB-4S2#AA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0414EGSB-4S2#AA1 is usually 5 days.

3.What payment methods are accepted for RMLV0414EGSB-4S2#AA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV0414EGSB-4S2#AA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RMLV0414EGSB-4S2#AA1?

RMLV0414EGSB-4S2#AA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RMLV0414EGSB-4S2#AA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RMLV0414EGSB-4S2#AA1?

For technical support, including RMLV0414EGSB-4S2#AA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0414EGSB-4S2#AA1 requirements.

6.How does Aetrix verify that RMLV0414EGSB-4S2#AA1 is sourced from the original manufacturer or authorized distributors?

All RMLV0414EGSB-4S2#AA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0414EGSB-4S2#AA1 meets industry standards.

7.What is the process for return or replacement of RMLV0414EGSB-4S2#AA1?

All RMLV0414EGSB-4S2#AA1 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0414EGSB-4S2#AA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RMLV0414EGSB-4S2#AA1 part is unused and in its original packaging.

Return procedure for RMLV0414EGSB-4S2#AA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RMLV0414EGSB-4S2#AA1 Tags

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