Renesas RMLV0414EGSB-4S2#HA0

Overview

RMLV0414EGSB-4S2#HA0 from Renesas Electronics is a 4Mb Advanced LPSRAM organized as 262,144-word × 16-bit, operating on a single 2.7–3.6V supply with 45ns max access time and 0.3µA typical standby current. It features byte-selectable upper/lower data access, three-state outputs, TTL-compatible I/O, and battery backup support - deployed in portable instrumentation and low-power embedded systems requiring non-volatile data retention during sleep.

For engineers reviewing the RMLV0414EGSB-4S2#HA0 datasheet, RMLV0414EGSB-4S2#HA0 pinout, RMLV0414EGSB-4S2#HA0 application, or RMLV0414EGSB-4S2#HA0 equivalent, key selection criteria include TSOP(II) package compatibility, 44-pin address/data multiplexing constraints, low-V_CC data retention down to 1.5V, and byte-write timing compliance per tBW ≤ 35ns.

Technical Context

This SRAM implements a synchronous, common I/O architecture with independent upper (UB#) and lower (LB#) byte enable controls, enabling partial writes without full-word bus contention. Its control logic decodes CS#, OE#, WE#, UB#, and LB# to manage read/write cycles, output impedance states, and high-impedance transitions within defined timing windows (e.g., tOLZ ≤ 5ns, tOHZ ≤ 18ns).

It supports dual retention modes: CS#-controlled (CS# ≥ V_CC−0.2V) and LB#/UB#-controlled (LB# = UB# ≥ V_CC−0.2V), both enabling data hold at V_CC as low as 1.5V with ICCDR ≤ 7µA at +85°C. Address decoding uses a 2,048 × 2,048 matrix with row/column selection driven by A0–A17.

Key Specifications

Pinout & Package

44-pin plastic TSOP(II) package, 400-mil body width, JEDEC MO-141AC compliant, with gull-wing leads and top-side marking including part number and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the RMLV0414EGSB-4S2#HA0 uniquely balances 45ns performance, ultra-low 0.3µA standby, and 1.5V data retention in a pin-compatible 44-pin TSOP(II), making it irreplaceable in battery-backed portable and safety-critical edge devices.

Availability

RMLV0414EGSB-4S2#HA0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, smart meter firmware caches, and avionics health monitoring units requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for RMLV0414EGSB-4S2#HA0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The RMLV0414E Series targets low-power embedded systems needing reliable, fast-access volatile memory with battery backup capability - optimized for portable instrumentation, energy metering, and mission-critical data buffering.

FAQ

What is the minimum V_CC required to retain data in RMLV0414EGSB-4S2#HA0?

The RMLV0414EGSB-4S2#HA0 guarantees data retention down to 1.5V V_CC when either CS# ≥ V_CC−0.2V or LB# = UB# ≥ V_CC−0.2V, with ICCDR ≤ 7µA at +85°C. This specification is verified per the Low V_CC Data Retention Characteristics table on page 12 of the R10DS0216EJ0300 datasheet. The RMLV0414EGSB-4S2#HA0 achieves this without external circuitry, enabling true zero-battery backup in compact designs.

Does RMLV0414EGSB-4S2#HA0 support independent upper and lower byte writes?

Yes, the RMLV0414EGSB-4S2#HA0 supports fully independent upper and lower byte writes via dedicated UB# and LB# control pins. When LB# is low and UB# is high, only I/O0–I/O7 are written; when UB# is low and LB# is high, only I/O8–I/O15 are written. This is confirmed in the Operation Table (page 3) and Write Cycle timing diagrams (pages 8–11). The RMLV0414EGSB-4S2#HA0 requires no external gating logic to implement byte-selectable memory updates.

What is the maximum operating frequency supported by RMLV0414EGSB-4S2#HA0?

The RMLV0414EGSB-4S2#HA0 does not specify a maximum clock frequency because it is an asynchronous SRAM. Its timing is governed by absolute parameters: tRC = 45ns (read/write cycle time), tAA = 45ns (address access), and tWC = 45ns (write cycle). These values define a maximum effective bus rate of ~22.2MHz for continuous sequential access. The RMLV0414EGSB-4S2#HA0 datasheet provides no clock input or synchronization circuitry - all operations are edge-triggered by CS#, WE#, and OE#.

Is RMLV0414EGSB-4S2#HA0 pin-compatible with other 44-pin TSOP(II) SRAMs?

The RMLV0414EGSB-4S2#HA0 follows JEDEC MO-141AC for 44-pin TSOP(II) mechanical dimensions and lead pitch, but its pinout (e.g., NC on pin 44, dual byte enables, 18 address lines) is specific to the RMLV0414E family. It is not pin-compatible with industry-standard 44-pin TSOP(II) SRAMs like the IS61LV25616AL or AS6C4008, which use different address counts and control signal assignments. Always verify pin mapping against the RMLV0414EGSB-4S2#HA0 Pin Arrangement diagram (page 2) before board reuse.

What is the typical standby current of RMLV0414EGSB-4S2#HA0 at room temperature?

The typical standby current (ISB1) of the RMLV0414EGSB-4S2#HA0 is 0.3µA at +25°C, as specified in the DC Characteristics table (page 4) of the R10DS0216EJ0300 Rev.3.00 datasheet. This value applies under conditions where CS# ≥ V_CC−0.2V or LB# = UB# ≥ V_CC−0.2V, with V_CC = 3.0V. The RMLV0414EGSB-4S2#HA0 achieves this ultra-low leakage using Renesas's Advanced LPSRAM process, making it suitable for decade-long battery-backed deployments.