Renesas RMLV0414EGSB-4S2#HA1

Overview

RMLV0414EGSB-4S2#HA1 from Renesas Electronics is a 4-Mbit advanced low-power static RAM organized as 262,144 words × 16 bits, operating from a single 2.7–3.6 V supply with 45 ns max access time and 0.3 µA typical standby current. It supports byte-selectable read/write operations via LB# and UB# control lines and is designed for battery-backed memory applications requiring data retention at reduced V_CC down to 1.5 V.

For engineers reviewing the RMLV0414EGSB-4S2#HA1 datasheet, RMLV0414EGSB-4S2#HA1 pinout, RMLV0414EGSB-4S2#HA1 application, or RMLV0414EGSB-4S2#HA1 equivalent, this page delivers verified specifications, TSOP (II) package layout, byte-level I/O control behavior, low-voltage data retention timing, and direct alternatives for industrial backup SRAM selection.

Technical Context

This device implements a fully static memory architecture with asynchronous parallel interface, TTL-compatible inputs/outputs, and independent upper/lower byte enable logic. Its control scheme uses active-low CS#, OE#, WE#, LB#, and UB# signals to manage chip select, output gating, write strobing, and 8-bit data granularity-enabling partial-word writes without external masking logic.

The RMLV0414EGSB-4S2#HA1 achieves ultra-low standby power via dual retention modes: CS#-controlled (CS# ≥ V_CC−0.2 V) or LB#/UB#-controlled (LB# = UB# ≥ V_CC−0.2 V), both permitting data hold at V_CC = 1.5 V with ≤7 µA current draw up to +85°C. All timing parameters-including tCLZ (10 ns), tBLZ (5 ns), and tOLZ (5 ns)-are guaranteed across −40°C to +85°C.

Key Specifications

Pinout & Package

44-pin plastic TSOP (II) package, 400-mil body width, JEDEC standard pinout with 0.8 mm pitch. Pin 1 marked by notch or dot; top view orientation shown in datasheet Figure 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Compared with CY62148EV30LL-45ZAXI and IS62WV25616BLL-45NLI, the RMLV0414EGSB-4S2#HA1 delivers superior battery longevity due to its 0.3 µA standby spec and 1.5 V retention-critical for sealed, maintenance-free deployments-while maintaining pin-compatible timing and interface behavior within the 44-pin TSOP footprint.

Availability

RMLV0414EGSB-4S2#HA1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical event logging, automotive black box recording, and smart meter firmware caching requiring stable component supply and long-term lifecycle support.

Supply support for RMLV0414EGSB-4S2#HA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The RMLV0414E Series was developed specifically for high-reliability, low-power backup memory in mission-critical embedded systems where data integrity during power interruption is non-negotiable.

FAQ

What is the minimum V_CC required to retain data in RMLV0414EGSB-4S2#HA1?

The RMLV0414EGSB-4S2#HA1 guarantees data retention down to 1.5 V under either CS#-controlled or LB#/UB#-controlled retention modes. At this voltage, ICCDR remains ≤7 µA up to +85°C, enabling robust operation with small backup capacitors or primary lithium cells. This specification is validated per the Low V_CC Data Retention Characteristics table on page 12 of the R10DS0216EJ0300 datasheet.

Does RMLV0414EGSB-4S2#HA1 support true byte-write operations?

Yes, the RMLV0414EGSB-4S2#HA1 supports independent lower-byte (I/O0–I/O7) and upper-byte (I/O8–I/O15) writes using LB# and UB# control signals. When only LB# is asserted low with WE# and CS# active, only the lower byte is written; similarly for UB#. This eliminates the need for external byte masking logic and reduces bus traffic in partial-word update scenarios.

What is the maximum operating temperature range for RMLV0414EGSB-4S2#HA1?

The RMLV0414EGSB-4S2#HA1 is rated for industrial temperature operation from −40°C to +85°C. All AC and DC specifications-including 45 ns access time, 0.3 µA standby current, and 1.5 V data retention-are guaranteed across this full range. The device uses Renesas's Advanced LPSRAM process to maintain parameter stability without derating.

Is RMLV0414EGSB-4S2#HA1 pin-compatible with other 44-pin TSOP SRAMs?

The RMLV0414EGSB-4S2#HA1 follows JEDEC-standard 44-pin TSOP (II) pinout for 16-bit parallel SRAMs, including identical VCC/VSS placement, address/data mapping, and control signal positions (CS#, OE#, WE#, LB#, UB#). However, pin compatibility does not imply functional equivalence-always verify timing, voltage, and retention specs before substitution.

How does the standby current of RMLV0414EGSB-4S2#HA1 compare to standard SRAMs?

The RMLV0414EGSB-4S2#HA1 achieves 0.3 µA typical standby current at +25°C-up to 100× lower than conventional 4-Mbit SRAMs. This is enabled by Renesas's Advanced LPSRAM technology and dual retention mode architecture. At +85°C, ISB1 remains ≤7 µA, making it uniquely suited for battery-backed applications where multi-year data retention is mandatory.