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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas RMLV0416EGBG-4S2#AC0

Name: RMLV0416EGBG-4S2#AC0
Brand: Renesas
SKU: RMLV0416EGBG-4S2#AC0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RMLV0416EGBG-4S2#AC0

Manufacturer:: Renesas

Category:: Memory

Package:: 48-TFBGA

Datasheet:: RMLV0416EGBG-4S2#AC0.pdf

Description:: IC SRAM 4MBIT PARALLEL 48TFBGA

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Product details

Overview

RMLV0416EGBG-4S2#AC0 from Renesas Electronics is a 4Mb Advanced LPSRAM organized as 262,144-word × 16-bit, operating from a single 2.7–3.6V supply with 45ns max access time, 0.3µA typical standby current, and designed for battery-backed memory systems in industrial and embedded controllers.

For engineers reviewing the RMLV0416EGBG-4S2#AC0 datasheet, RMLV0416EGBG-4S2#AC0 pinout, RMLV0416EGBG-4S2#AC0 application, or RMLV0416EGBG-4S2#AC0 equivalent, this page delivers verified package mapping (48-ball FBGA, 0.75mm pitch), byte-selectable I/O architecture, TTL-compatible interface timing, low-voltage data retention down to 1.5V, and direct replacement guidance for legacy LPSRAM designs.

Technical Context

The RMLV0416EGBG-4S2#AC0 implements a dual-chip-select architecture (CS1# active-low, CS2 active-high) with independent upper/lower byte enables (UB#, LB#) and output enable (OE#), supporting full 16-bit, upper-byte-only, or lower-byte-only read/write operations. Its internal address decoder handles 18-bit addressing (A0–A17) for 256k-word capacity.

It supports three distinct data retention modes-CS2-controlled, CS1#-controlled, or LB#/UB#-controlled-with guaranteed data hold at VCC ≥ 1.5V and ICCDR ≤ 7µA up to +85°C. All inputs and outputs are TTL-compatible, and the device enters high-impedance state within 18ns of chip deselect or output disable.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory size	4Mb (262,144 × 16-bit); provides compact, non-refreshing RAM for microcontroller co-processing or buffer storage.
Access time	45ns max; enables direct interfacing with 22 MHz bus clocks without wait states in most MCU systems.
Supply voltage	2.7V to 3.6V; compatible with 3.3V logic domains and tolerant of brown-out conditions during backup operation.
Standby current	0.3µA typ. at +25°C; extends battery life in always-on backup memory applications beyond 10 years.
Data retention VCC	1.5V min; maintains SRAM contents during deep power-down or coin-cell backup without external regulators.
Package	48-ball FBGA, 0.75mm pitch; offers 30% smaller footprint than 44-pin TSOP(II) while maintaining thermal performance.
I/O interface	Common bidirectional data bus (I/O0–I/O15) with three-state control; eliminates need for external transceivers in space-constrained designs.

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), 0.75mm ball pitch, 7.0mm × 8.0mm body size, RoHS-compliant, lead-free solder finish.

Pin/Terminal	Circuit Role	Design Meaning
VCC	Power supply	Primary 2.7–3.6V core supply; two dedicated balls (pins D1, E1) reduce IR drop and noise coupling.
VSS	Ground	System ground reference; four dedicated balls (C1, D2, E2, F1) ensure low-impedance return path.
A0–A17	Address input	18-bit address bus; fully decoded internally to access all 262,144 words without external demultiplexing.
I/O0–I/O15	Data input/output	Bidirectional 16-bit data bus; three-state controlled by OE#, CS1#, CS2, LB#, UB# for flexible byte granularity.
CS1#	Chip select 1	Active-low primary enable; must be low with CS2 high for valid read/write cycles.
CS2	Chip select 2	Active-high secondary enable; controls internal buffers and enables low-VCC data retention when pulled low.
OE#	Output enable	Active-low control for output drivers; allows read data to appear on I/O bus only when asserted.
WE#	Write enable	Active-low write strobe; initiates write cycle when CS1# low, CS2 high, and LB#/UB# active.
LB# / UB#	Byte select	Independent active-low enables for lower (I/O0–I/O7) or upper (I/O8–I/O15) byte writes/reads.
NC	No connection	Three unconnected balls (F3, G3, H3); must remain floating per design - no PCB routing or pull-ups.

Key Features

Feature	Design Value
Low-power standby mode	0.3µA typical current draw enables multi-year battery backup in metering and alarm systems.
Triple data retention control	CS2-, CS1#-, or LB#/UB#-triggered retention mode allows flexible system-level power management strategies.
TTL-compatible I/O	All pins meet VIH ≥ 2.2V and VIL ≤ 0.6V thresholds, eliminating level-shifting requirements with 3.3V MCUs.
Equal access/cycle timing	tRC = tAA = 45ns ensures deterministic bus timing - no separate setup/hold penalties for consecutive reads/writes.
Byte-selectable I/O	Independent LB# and UB# pins enable 8-bit peripheral interfacing without software masking or bus contention.

Applications

Smart Energy Metering	Industrial PLC Data Buffer
Use Scenario: Stores real-time energy consumption logs and tariff tables during mains failure using coin-cell backup. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer retaining critical billing data across power cycles with <1.5V retention threshold. Use Value: Eliminates need for EEPROM wear leveling or flash write latency; guarantees atomic data integrity during brown-out events.	Use Scenario: Holds I/O scan history and diagnostic registers in modular PLC backplanes with distributed power domains. IC Role / Device Role / Timing Role: High-speed local memory for cyclic process data exchange between CPU and fieldbus modules. Use Value: 45ns access enables sub-100µs scan cycles; FBGA package fits dense backplane layouts with minimal trace length.
Medical Patient Monitor Cache	Automotive ADAS Event Logger
Use Scenario: Caches waveform buffers and alarm-triggered snapshots in portable monitors powered by Li-ion batteries. IC Role / Device Role / Timing Role: Low-leakage SRAM preserving vital patient data during battery swaps or charging interruptions. Use Value: 0.3µA standby current extends operational uptime between charges; TTL compatibility simplifies interface to ARM Cortex-M4 SoCs.	Use Scenario: Captures pre-crash sensor fusion data in automotive black-box recorders with dual-supply failover. IC Role / Device Role / Timing Role: High-reliability memory capturing timestamped CAN/LIN messages and IMU samples at 1kHz. Use Value: CS2-controlled retention mode activates automatically during main rail collapse, ensuring zero-data-loss logging.

Smart Energy Metering

Industrial PLC Data Buffer

Use Scenario: Stores real-time energy consumption logs and tariff tables during mains failure using coin-cell backup.

IC Role / Device Role / Timing Role: Non-volatile SRAM buffer retaining critical billing data across power cycles with <1.5V retention threshold.

Use Value: Eliminates need for EEPROM wear leveling or flash write latency; guarantees atomic data integrity during brown-out events.

Use Scenario: Holds I/O scan history and diagnostic registers in modular PLC backplanes with distributed power domains.

IC Role / Device Role / Timing Role: High-speed local memory for cyclic process data exchange between CPU and fieldbus modules.

Use Value: 45ns access enables sub-100µs scan cycles; FBGA package fits dense backplane layouts with minimal trace length.

Medical Patient Monitor Cache

Automotive ADAS Event Logger

Use Scenario: Caches waveform buffers and alarm-triggered snapshots in portable monitors powered by Li-ion batteries.

IC Role / Device Role / Timing Role: Low-leakage SRAM preserving vital patient data during battery swaps or charging interruptions.

Use Value: 0.3µA standby current extends operational uptime between charges; TTL compatibility simplifies interface to ARM Cortex-M4 SoCs.

Use Scenario: Captures pre-crash sensor fusion data in automotive black-box recorders with dual-supply failover.

IC Role / Device Role / Timing Role: High-reliability memory capturing timestamped CAN/LIN messages and IMU samples at 1kHz.

Use Value: CS2-controlled retention mode activates automatically during main rail collapse, ensuring zero-data-loss logging.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power static RAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV25616AL-10TLI	10ns faster access (35ns), 44-pin TSOP(II) only, no FBGA option, higher standby current (1µA typ.)	Preferred where board layout permits larger TSOP and speed-critical burst transfers are required.	Select if system clock >28 MHz and PCB has space for 44-pin package; verify thermal derating at +85°C.
AS6C4008-55ZIN	Slower access (55ns), 48-ball FBGA same pitch, 1.8V–3.6V supply, 1µA standby current, no low-VCC retention spec	Suitable for cost-sensitive consumer devices where 1.5V retention is not required.	Choose for price-sensitive designs needing FBGA footprint but tolerating longer access and no battery-retention guarantee.

Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the RMLV0416EGBG-4S2#AC0 uniquely balances 45ns speed, 0.3µA standby, 1.5V data retention, and 48-ball FBGA - making it optimal for industrial battery-backed systems requiring long-term reliability without speed or footprint trade-offs.

Availability

RMLV0416EGBG-4S2#AC0 is available at Aetrix Electronics and suitable for smart metering, industrial PLC data buffering, medical monitor caching, and automotive event logging requiring stable component supply across extended product lifecycles.

Supply support for RMLV0416EGBG-4S2#AC0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The RMLV0416E Series was developed as an Advanced LPSRAM family targeting battery-backed, low-power embedded systems requiring reliable, fast, and compact static RAM with guaranteed data retention under brown-out conditions.

FAQ

What is the minimum supply voltage required to retain data in RMLV0416EGBG-4S2#AC0?

The RMLV0416EGBG-4S2#AC0 guarantees data retention down to 1.5V VCC when placed in retention mode via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V (with CS2 ≥ VCC−0.2V), or LB#/UB# ≥ VCC−0.2V (with CS1# ≤ 0.2V). This specification is validated across the full −40°C to +85°C temperature range and enables robust operation with coin-cell or supercapacitor backup sources.

Does RMLV0416EGBG-4S2#AC0 support byte-wide read and write operations?

Yes, the RMLV0416EGBG-4S2#AC0 supports independent byte access through dedicated LB# (lower byte, I/O0–I/O7) and UB# (upper byte, I/O8–I/O15) control pins. When LB# is active low and UB# is high, only the lower byte is driven or latched; the reverse enables upper-byte-only operations - allowing efficient 8-bit peripheral interfacing without software bit-masking.

What is the maximum operating frequency supported by RMLV0416EGBG-4S2#AC0?

The RMLV0416EGBG-4S2#AC0 does not specify a maximum clock frequency, as it is an asynchronous SRAM. Its timing is governed by access and cycle times: tRC and tAA are both rated at 45ns max, corresponding to a theoretical maximum bus toggle rate of ~22.2 MHz. System timing must satisfy all AC parameters including tAS, tDH, tWP, and tBW per the datasheet's write cycle definitions.

Is RMLV0416EGBG-4S2#AC0 pin-compatible with other members of the RMLV0416E Series?

Yes, the RMLV0416EGBG-4S2#AC0 shares identical pinout and signal definitions with other 48-ball FBGA variants in the RMLV0416E Series, including RMLV0416EGBG-4S2#KC0. However, it is not pin-compatible with the 44-pin TSOP(II) variants (e.g., RMLV0416EGSB-4S2#AA0) due to differing package geometry, ball/pad count, and layout.

What thermal and mechanical specifications apply to the 48-ball FBGA package of RMLV0416EGBG-4S2#AC0?

The RMLV0416EGBG-4S2#AC0 uses a 48-ball FBGA with 0.75mm ball pitch, 7.0mm × 8.0mm body dimensions, and JEDEC-standard solder reflow profile (peak: 260°C, 10s max). Its thermal resistance (θJA) is 52°C/W, and it operates across −40°C to +85°C ambient. The package is RoHS-compliant and features lead-free (Pb-free) solder balls with Ni/Au surface finish.

RMLV0416EGBG-4S2#AC0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 48-TFBGA

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM

Memory Size:: 4Mbit

Memory Organization:: 256K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 45ns

Access Time:: 45 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-TFBGA (7.5x8.5)

RMLV0416EGBG-4S2#AC0 FAQ

1.How can I place an order for RMLV0416EGBG-4S2#AC0 through Aetrix?

Please submit a Request for Quotation (RFQ) for RMLV0416EGBG-4S2#AC0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RMLV0416EGBG-4S2#AC0 reliable?

The price and inventory of RMLV0416EGBG-4S2#AC0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0416EGBG-4S2#AC0 is usually 5 days.

3.What payment methods are accepted for RMLV0416EGBG-4S2#AC0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV0416EGBG-4S2#AC0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RMLV0416EGBG-4S2#AC0?

RMLV0416EGBG-4S2#AC0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RMLV0416EGBG-4S2#AC0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RMLV0416EGBG-4S2#AC0?

For technical support, including RMLV0416EGBG-4S2#AC0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0416EGBG-4S2#AC0 requirements.

6.How does Aetrix verify that RMLV0416EGBG-4S2#AC0 is sourced from the original manufacturer or authorized distributors?

All RMLV0416EGBG-4S2#AC0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0416EGBG-4S2#AC0 meets industry standards.

7.What is the process for return or replacement of RMLV0416EGBG-4S2#AC0?

All RMLV0416EGBG-4S2#AC0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0416EGBG-4S2#AC0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RMLV0416EGBG-4S2#AC0 part is unused and in its original packaging.

Return procedure for RMLV0416EGBG-4S2#AC0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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