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Renesas RMLV0416EGSB-4S2#AA0
- Part No.:
- RMLV0416EGSB-4S2#AA0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
RMLV0416EGSB-4S2#AA0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,352
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Product details
Overview
RMLV0416EGSB-4S2#AA0 from Renesas Electronics is a 4Mb Advanced LPSRAM organized as 262,144-word × 16-bit, operating from a single 2.7–3.6V supply with 45ns max access time, 0.3µA typical standby current, and TTL-compatible I/O - deployed in battery-backed industrial controllers and real-time data logging systems.
For engineers reviewing the RMLV0416EGSB-4S2#AA0 datasheet, RMLV0416EGSB-4S2#AA0 pinout, RMLV0416EGSB-4S2#AA0 application, or RMLV0416EGSB-4S2#AA0 equivalent, this page delivers verified package mapping (44-pin TSOP II), byte-select control timing, low-voltage data retention behavior, and direct alternatives for memory subsystem redesign.
Technical Context
This static RAM implements dual chip select logic (CS1# active-low, CS2 active-high) with independent upper/lower byte enable (UB#, LB#) for 16-bit data bus partitioning. It supports simultaneous read/write operations only within enabled byte lanes, with output disable via OE# and high-impedance control governed by tOHZ (≤18ns) and tCHZ (≤18ns).
Operation requires strict voltage sequencing: VCC must be stable before address/data transitions, and data retention is guaranteed down to 1.5V when CS2 ≤ 0.2V or LB#/UB# ≥ VCC−0.2V. Standby current scales with temperature (0.3µA @ 25°C, 7µA @ 85°C) under valid retention conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4Mb (262,144 × 16-bit) - supports full 16-bit parallel interface without external multiplexing |
| Supply voltage | 2.7V to 3.6V - compatible with 3.3V logic domains and brown-out tolerant in battery backup |
| Access time | 45ns max - enables direct interfacing with microcontrollers running at ≤22MHz asynchronous bus clocks |
| Standby current | 0.3µA typ. @ 25°C - extends battery life to years in always-on monitoring nodes |
| Data retention VCC | 1.5V min - maintains SRAM contents during deep sleep or power-fail holdover |
| I/O interface | Common bidirectional data bus (I/O0–I/O15) with three-state control - eliminates need for external transceivers |
| Operating temp | −40°C to +85°C - qualified for industrial automation and transportation electronics |
Pinout & Package
Package: 44-pin plastic TSOP (II), 400-mil width, JEDEC standard footprint (0.8mm pitch, 12.0×20.0mm body).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power supply | Primary 2.7–3.6V supply rail; decoupling required within 5mm of pin |
| VSS | Ground | Digital ground reference; separate plane recommended from analog/IO grounds |
| A0–A17 | Address input | 18-bit address bus supporting full 262k-word decoding; no internal latching |
| I/O0–I/O15 | Data input/output | Bidirectional 16-bit data path; high-impedance when CS1#, OE#, or LB#/UB# inactive |
| CS1# | Chip select 1 | Active-low primary enable; device selected only when CS1# = L AND CS2 = H |
| CS2 | Chip select 2 | Active-high secondary enable; controls buffer activation and data retention mode |
| OE# | Output enable | Active-low read control; disables outputs (high-Z) when asserted during write or standby |
| WE# | Write enable | Active-low write strobe; initiates write cycle on falling edge with valid CS and byte select |
| LB# | Lower byte select | Active-low enable for I/O0–I/O7; allows 8-bit writes without disturbing upper byte |
| UB# | Upper byte select | Active-low enable for I/O8–I/O15; enables partial writes to high-order byte only |
Key Features
| Feature | Design Value |
|---|---|
| Single-supply 3V operation | Eliminates need for dual-rail regulators or level shifters in 3.3V systems |
| Byte-selectable write capability | Reduces bus contention and enables efficient 8-bit peripheral interfacing without software masking |
| 0.3µA standby current | Enables >5-year battery life in coin-cell powered data loggers at room temperature |
| 1.5V data retention threshold | Permits use with supercapacitor holdup circuits sized for minimal energy storage |
| TTL-compatible inputs/outputs | Direct connection to legacy microcontrollers (e.g., Renesas RL78, SH-2) without interface logic |
Applications
| Industrial PLC Data Buffer | Medical Device Event Logger |
|---|---|
Use Scenario: Real-time buffering of sensor readings and actuator commands in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: High-speed, non-volatile shadow RAM holding I/O image tables; accessed synchronously with CPU bus cycles. Use Value: 45ns access ensures zero-wait-state operation with 22MHz bus clocks; byte-select enables atomic updates to status registers without corrupting adjacent data. |
Use Scenario: Continuous timestamped storage of ECG waveforms and alarm events in portable diagnostic equipment. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving critical patient data during AC power loss or battery swap. Use Value: 0.3µA standby current extends CR2032 battery life beyond 36 months; 1.5V retention supports seamless switchover to backup power. |
| Automotive Telematics Black Box | Test Equipment Configuration Memory |
Use Scenario: Crash-data capture and pre-event buffering in vehicle event data recorders (EDRs) meeting ISO 26262 ASIL-B requirements. IC Role / Device Role / Timing Role: Low-latency, radiation-tolerant memory storing CAN message timestamps and vehicle state snapshots. Use Value: −40°C to +85°C rating ensures reliability across engine bay and cabin environments; dual CS logic prevents spurious writes during power transients. |
Use Scenario: Storing calibration coefficients, test sequences, and user preferences in automated benchtop test instruments. IC Role / Device Role / Timing Role: Nonvolatile configuration store retaining settings across power cycles and firmware updates. Use Value: TSOP-II package enables compact PCB layout; TTL compatibility simplifies integration with FPGA-based control logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10ns faster access (35ns), higher ICC (25mA active), 48-pin TSOPII package | Targeted at high-speed DSP interfaces; lacks low-VCC retention mode | Select when system clock exceeds 28MHz and battery backup is not required |
| AS6C4008-55TIN | Slower access (55ns), 2.7–5.5V supply range, same 44-pin TSOP-II footprint | Supports mixed-voltage systems; no byte-select pins - full 16-bit writes only | Choose for legacy 5V designs or where simplified control logic outweighs speed penalty |
Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, RMLV0416EGSB-4S2#AA0 uniquely balances ultra-low standby power (0.3µA), battery-retention capability (1.5V), and byte-select flexibility - making it optimal for energy-constrained, safety-critical embedded systems requiring partial-write integrity.
Availability
RMLV0416EGSB-4S2#AA0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical event logging, automotive black box recording, and test equipment configuration memory requiring stable component supply across extended product lifecycles.
Supply support for RMLV0416EGSB-4S2#AA0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The RMLV0416E Series was designed specifically for low-power, battery-backed memory applications demanding high reliability, wide temperature operation, and byte-level write granularity - targeting industrial automation, medical instrumentation, and telematics.
FAQ
What is the minimum VCC required to retain data in RMLV0416EGSB-4S2#AA0?
The RMLV0416EGSB-4S2#AA0 guarantees data retention down to 1.5V VCC when configured in retention mode via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V (with CS2 ≥ VCC−0.2V), or LB#/UB# ≥ VCC−0.2V (with CS1# ≤ 0.2V and CS2 ≥ VCC−0.2V). This specification is validated per the Low VCC Data Retention Characteristics table on page 12 of the R10DS0205EJ0300 datasheet.
Does RMLV0416EGSB-4S2#AA0 support true 8-bit operation?
Yes, RMLV0416EGSB-4S2#AA0 supports true 8-bit operation through dedicated LB# (I/O0–I/O7) and UB# (I/O8–I/O15) control pins. When only LB# is asserted low (UB# high), only the lower byte is written or read; similarly, asserting only UB# enables upper-byte access - enabling atomic partial writes without software masking or bus turnaround delays.
What is the maximum operating frequency supported by RMLV0416EGSB-4S2#AA0?
RMLV0416EGSB-4S2#AA0 does not operate on a clock signal but is asynchronous. Its 45ns maximum access time and 45ns cycle time correspond to a theoretical maximum bus toggle rate of ~22.2MHz. System timing must satisfy all AC parameters including tAS (0ns address setup), tDH (0ns data hold), and tCW (35ns chip select to write end) as defined in the Write Cycle timing tables on pages 6–11.
Is RMLV0416EGSB-4S2#AA0 pin-compatible with other 44-pin TSOP-II SRAMs?
RMLV0416EGSB-4S2#AA0 follows JEDEC-standard 44-pin TSOP (II) pinout (page 2 of R10DS0205EJ0300), matching industry conventions for address, data, and control signals. However, pin compatibility with other SRAMs requires verification of function mapping - e.g., CS2 is active-high here but often active-low elsewhere; LB#/UB# are not present on many legacy 16-bit SRAMs. Always cross-check pin descriptions before substitution.
How does the standby current of RMLV0416EGSB-4S2#AA0 vary with temperature?
RMLV0416EGSB-4S2#AA0 standby current (ISB1) increases with temperature: 0.3µA typical at 25°C, 3µA at 40°C, 5µA at 70°C, and 7µA at 85°C - all measured under valid retention conditions (CS2 ≤ 0.2V or equivalent). This behavior is specified in the DC Characteristics table on page 4 and directly impacts battery lifetime calculations in thermal environments.
RMLV0416EGSB-4S2#AA0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
RMLV0416EGSB-4S2#AA0 FAQ
1.How can I place an order for RMLV0416EGSB-4S2#AA0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV0416EGSB-4S2#AA0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV0416EGSB-4S2#AA0 reliable?
The price and inventory of RMLV0416EGSB-4S2#AA0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0416EGSB-4S2#AA0 is usually 5 days.
3.What payment methods are accepted for RMLV0416EGSB-4S2#AA0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV0416EGSB-4S2#AA0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMLV0416EGSB-4S2#AA0?
RMLV0416EGSB-4S2#AA0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMLV0416EGSB-4S2#AA0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMLV0416EGSB-4S2#AA0?
For technical support, including RMLV0416EGSB-4S2#AA0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0416EGSB-4S2#AA0 requirements.
6.How does Aetrix verify that RMLV0416EGSB-4S2#AA0 is sourced from the original manufacturer or authorized distributors?
All RMLV0416EGSB-4S2#AA0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0416EGSB-4S2#AA0 meets industry standards.
7.What is the process for return or replacement of RMLV0416EGSB-4S2#AA0?
All RMLV0416EGSB-4S2#AA0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0416EGSB-4S2#AA0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV0416EGSB-4S2#AA0 part is unused and in its original packaging.
Return procedure for RMLV0416EGSB-4S2#AA0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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