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Renesas RMLV0416EGSB-4S2#AA1
- Part No.:
- RMLV0416EGSB-4S2#AA1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
RMLV0416EGSB-4S2#AA1.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,648
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Product details
Overview
RMLV0416EGSB-4S2#AA1 from Renesas Electronics is a 4Mb Advanced LPSRAM organized as 262,144-word × 16-bit, operating from a single 2.7–3.6V supply with 45ns max access time and 0.3µA typical standby current, designed for low-power battery-backed memory applications in industrial control and portable instrumentation.
For engineers reviewing the RMLV0416EGSB-4S2#AA1 datasheet, RMLV0416EGSB-4S2#AA1 pinout, RMLV0416EGSB-4S2#AA1 application, or RMLV0416EGSB-4S2#AA1 equivalent, this page delivers verified package mapping (44-pin TSOP II), byte-selectable I/O architecture, TTL-compatible interface timing, and retention operation down to 1.5V - critical for embedded systems requiring nonvolatile data hold during power loss.
Technical Context
The RMLV0416EGSB-4S2#AA1 implements dual chip select logic (CS1# active-low, CS2 active-high) with independent upper/lower byte enable (UB#/LB#) and output enable (OE#), enabling selective 8-bit or full 16-bit data transfers without external gating. Its address decoding supports 18-bit addressing (A0–A17) for direct 256k-word access.
It features three-state bidirectional I/O0–I/O15 pins with 2mA drive capability, 10pF I/O capacitance, and guaranteed high-impedance isolation (tOHZ ≤ 18ns) during standby or deselect - essential for bus-sharing in multi-peripheral microcontroller systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4Mb (262,144 × 16-bit) - supports full 16-bit data bus interfacing without glue logic |
| Supply voltage | 2.7V to 3.6V - compatible with 3.3V logic families and tolerant of brown-out conditions |
| Access time | 45ns max - enables direct connection to MCUs with ≤22MHz asynchronous bus clocks |
| Standby current | 0.3µA typ. at +25°C - extends battery life in always-on backup memory applications |
| Data retention VCC | 1.5V min - maintains SRAM contents during deep sleep or main power failure |
| Operating temperature | -40°C to +85°C - qualified for industrial-grade embedded deployment |
| I/O drive strength | 2mA sink / 1mA source - meets TTL input thresholds while driving standard PCB traces |
Pinout & Package
Package: 44-pin TSOP (II), 400-mil body, surface-mount, JEDEC standard footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power supply | Primary 2.7–3.6V supply rail; decoupling required within 10mm |
| VSS | Ground | Digital ground reference; separate plane recommended from analog ground |
| A0–A17 | Address input | 18-bit address bus supporting full 256k-word access; no internal multiplexing |
| I/O0–I/O15 | Data I/O | Bidirectional 16-bit data bus with three-state control; shared pins reduce pin count |
| CS1#, CS2 | Chip select | Complementary enable pair: CS1# low + CS2 high activates memory; allows hierarchical decoding |
| OE#, WE#, LB#, UB# | Control inputs | Independent read/write/byte-select enables; supports partial writes without masking logic |
| NC | No connection | Unbonded pad; must remain floating - no pull-up/down or routing |
Key Features
| Feature | Design Value |
|---|---|
| Single-supply 3V operation | Eliminates need for dual-voltage regulators in 3.3V systems, reducing BOM cost and board area |
| Byte-selectable write | LB# and UB# allow independent 8-bit writes to lower or upper data byte - avoids full-word read-modify-write cycles |
| TTL-compatible I/O | All inputs accept 0.6V/2.2V thresholds and outputs drive 2mA - interfaces directly with legacy 3.3V MCUs without level shifters |
| Low-voltage data retention | Maintains stored data down to 1.5V VCC using CS2, CS1#, or LB#/UB# control - enables seamless battery switchover |
| 45ns equal access/cycle time | Simplifies timing budgeting in asynchronous bus designs - no separate setup/hold or cycle overhead calculations needed |
Applications
| Industrial PLC Data Buffer | Portable Medical Instrument Memory |
|---|---|
Use Scenario: Real-time logging of sensor readings and control states in programmable logic controllers during mains power interruption. IC Role / Device Role / Timing Role: Nonvolatile backup RAM holding last valid process state and configuration parameters. Use Value: 0.3µA standby current and 1.5V retention threshold ensure >10-year battery-backed data integrity without refresh circuitry. | Use Scenario: Storing calibration coefficients and patient session history in handheld ECG or glucose meters with coin-cell backup. IC Role / Device Role / Timing Role: Low-power static RAM providing fast random-access storage between measurement sessions. Use Value: 45ns access time enables immediate data retrieval upon wake-up; 44-pin TSOP II fits compact medical PCB layouts. |
| Automotive Telematics Event Log | Smart Energy Meter Firmware Cache |
Use Scenario: Capturing crash-event CAN bus snapshots and GPS coordinates in vehicle black-box recorders. IC Role / Device Role / Timing Role: High-reliability SRAM buffering time-critical telemetry before flash commit. Use Value: -40°C to +85°C rating ensures operation across automotive under-hood environments; byte-select writes minimize bus contention. | Use Scenario: Caching firmware update packets and metering registers in utility-grade smart electricity meters. IC Role / Device Role / Timing Role: Battery-backed memory preserving update state during grid outages. Use Value: Dual chip select (CS1#/CS2) allows clean isolation from main MCU bus during firmware validation sequences. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10ns access time, 3.3V only (3.135–3.465V), 48-pin TSOP | Higher speed but narrower voltage tolerance; requires tighter regulator | Select when system clock exceeds 25MHz and voltage regulation is precise |
| AS6C4008-55PCN | 55ns access, 2.7–5.5V supply, 44-pin SOJ package | Wider voltage range but slower; SOJ not RoHS-compliant | Choose for legacy 5V systems or where extended VCC margin outweighs speed penalty |
Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the RMLV0416EGSB-4S2#AA1 uniquely balances 45ns performance, ultra-low 0.3µA standby, and 1.5V retention - making it optimal for battery-constrained industrial and medical devices where reliability trumps raw speed.
Availability
RMLV0416EGSB-4S2#AA1 is available at Aetrix Electronics and suitable for industrial PLC data buffers, portable medical instrument memory, automotive telematics event logs, and smart energy meter firmware caches requiring stable component supply across long product lifecycles.
Supply support for RMLV0416EGSB-4S2#AA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The RMLV0416E Series is part of Renesas' Advanced LPSRAM product line, engineered specifically for low-power, high-reliability embedded memory applications where battery backup, wide temperature operation, and pin-efficient 16-bit interfacing are mandatory.
FAQ
What is the maximum operating frequency supported by the RMLV0416EGSB-4S2#AA1?
The RMLV0416EGSB-4S2#AA1 does not operate on a clock signal - it is an asynchronous SRAM. Its 45ns access time corresponds to a maximum effective bus frequency of approximately 22MHz for continuous random reads. System timing must satisfy tRC ≥ 45ns, tAA ≤ 45ns, and tOE ≤ 22ns per the AC characteristics table in the R10DS0205EJ0300 datasheet. The RMLV0416EGSB-4S2#AA1 requires no external clock and responds directly to address and control transitions.
Does the RMLV0416EGSB-4S2#AA1 support true 16-bit data width without multiplexing?
Yes, the RMLV0416EGSB-4S2#AA1 provides native 16-bit bidirectional data I/O via dedicated I/O0–I/O15 pins - no address/data multiplexing is used. Its 262,144-word × 16-bit organization means each address accesses one full 16-bit word simultaneously. This eliminates the need for external latching or byte-swapping logic in 16-bit microprocessor or FPGA interfaces, simplifying PCB layout and timing closure for the RMLV0416EGSB-4S2#AA1.
How does the RMLV0416EGSB-4S2#AA1 achieve data retention below 2.7V?
The RMLV0416EGSB-4S2#AA1 maintains data integrity down to 1.5V VCC using three selectable retention modes: CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V (with CS2 high), or LB#/UB# ≥ VCC−0.2V (with CS1# low). In any mode, standby current remains ≤7µA at +85°C. This capability is intrinsic to Renesas' Advanced LPSRAM process and is validated per the Low VCC Data Retention Characteristics table on page 12 of the R10DS0205EJ0300 datasheet for the RMLV0416EGSB-4S2#AA1.
What is the purpose of the dual chip select signals (CS1# and CS2) on the RMLV0416EGSB-4S2#AA1?
The RMLV0416EGSB-4S2#AA1 uses active-low CS1# and active-high CS2 to enable hierarchical memory decoding and flexible bus arbitration. Both must be asserted (CS1# = L, CS2 = H) for normal read/write operations. CS2 alone can place the device in data retention mode when pulled low, while CS1# controls core logic activation. This separation allows partial system power-down without losing memory contents - a key design feature confirmed in the Operation Table (page 3) and Low VCC Data Retention section of the RMLV0416EGSB-4S2#AA1 datasheet.
Is the RMLV0416EGSB-4S2#AA1 pin-compatible with other 44-pin TSOP SRAMs like the IS61LV25616AL?
No, the RMLV0416EGSB-4S2#AA1 is not pin-compatible with IS61LV25616AL or similar 44-pin TSOP SRAMs. While both use 44-pin TSOP (II), the RMLV0416EGSB-4S2#AA1 places VCC on pins 11/29, VSS on pins 12/30, and locates CS2 on pin 2 - whereas IS61LV25616AL assigns CS2 to pin 33 and uses different address pin ordering. Pin mapping must be verified against the "Pin Arrangement" diagram on page 2 of R10DS0205EJ0300 for the RMLV0416EGSB-4S2#AA1; direct substitution requires PCB redesign.
RMLV0416EGSB-4S2#AA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
RMLV0416EGSB-4S2#AA1 FAQ
1.How can I place an order for RMLV0416EGSB-4S2#AA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV0416EGSB-4S2#AA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV0416EGSB-4S2#AA1 reliable?
The price and inventory of RMLV0416EGSB-4S2#AA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0416EGSB-4S2#AA1 is usually 5 days.
3.What payment methods are accepted for RMLV0416EGSB-4S2#AA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV0416EGSB-4S2#AA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMLV0416EGSB-4S2#AA1?
RMLV0416EGSB-4S2#AA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMLV0416EGSB-4S2#AA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMLV0416EGSB-4S2#AA1?
For technical support, including RMLV0416EGSB-4S2#AA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0416EGSB-4S2#AA1 requirements.
6.How does Aetrix verify that RMLV0416EGSB-4S2#AA1 is sourced from the original manufacturer or authorized distributors?
All RMLV0416EGSB-4S2#AA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0416EGSB-4S2#AA1 meets industry standards.
7.What is the process for return or replacement of RMLV0416EGSB-4S2#AA1?
All RMLV0416EGSB-4S2#AA1 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0416EGSB-4S2#AA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV0416EGSB-4S2#AA1 part is unused and in its original packaging.
Return procedure for RMLV0416EGSB-4S2#AA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RMLV0416EGSB-4S2#AA1 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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