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Renesas RMLV0416EGSB-4S2#HA0
- Part No.:
- RMLV0416EGSB-4S2#HA0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
RMLV0416EGSB-4S2#HA0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
RMLV0416EGSB-4S2#HA0 from Renesas Electronics is a 4Mb Advanced LPSRAM organized as 262,144-word × 16-bit, operating on a single 2.7–3.6V supply with 45ns max access time and 0.3µA typical standby current, designed for low-power battery-backed memory applications in industrial controllers and portable instrumentation.
For engineers reviewing the RMLV0416EGSB-4S2#HA0 datasheet, RMLV0416EGSB-4S2#HA0 pinout, RMLV0416EGSB-4S2#HA0 application, or RMLV0416EGSB-4S2#HA0 equivalent, this page delivers verified package mapping (44-pin TSOP II), byte-selectable I/O architecture, TTL-compatible interface timing, and low-voltage data retention down to 1.5V - all critical for embedded SRAM selection and power-sensitive system design.
Technical Context
The RMLV0416EGSB-4S2#HA0 implements a dual-chip-select architecture (CS1# active-low, CS2 active-high) with independent upper/lower byte enables (UB#, LB#) and three-state output control via OE#. Its operation table defines eight distinct functional states including full-word read/write, byte-select read/write, and multiple standby modes triggered by CS2 low, CS1# high, or UB#/LB# high.
It supports true static operation with no refresh required, equal access and cycle times (tRC = tAA = 45ns), and low-voltage data retention at VCC ≥ 1.5V when entering retention mode via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V (with CS2 ≥ VCC−0.2V), or simultaneous UB#/LB# ≥ VCC−0.2V - enabling seamless integration into backup power domains.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4Mb (262,144 × 16-bit); provides 512KB of word-addressable RAM for firmware buffers or real-time data logging. |
| Supply voltage | 2.7V to 3.6V; compatible with standard 3.3V logic rails and tolerant of brown-out conditions down to 2.7V. |
| Access time | 45ns max; enables direct interfacing with microcontrollers running at ≤22MHz bus clocks without wait states. |
| Standby current | 0.3µA typ. at +25°C; extends battery life in always-on backup memory applications beyond 10 years. |
| Data retention VCC | 1.5V min; maintains stored data during deep sleep or main power loss when backed by coin-cell or supercapacitor. |
| I/O interface | Common bidirectional data bus (I/O0–I/O15) with TTL-compatible inputs/outputs; eliminates level-shifting in 3.3V systems. |
| Byte control | Dedicated LB# and UB# pins enable selective 8-bit writes without read-modify-write cycles, reducing bus traffic and power. |
Pinout & Package
Package: 44-pin TSOP (II), 400-mil body width, surface-mount, JEDEC standard footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power supply | Primary 2.7–3.6V supply rail; requires local 0.1µF ceramic decoupling per device. |
| VSS | Ground | Signal and power ground reference; must be connected to system ground plane with low-inductance path. |
| A0–A17 | Address input | 18-bit address bus supporting full 262,144-word addressing; A0–A17 directly map to memory locations. |
| I/O0–I/O15 | Data input/output | Bidirectional 16-bit data bus; three-state controlled by CS1#, CS2, OE#, LB#, and UB#. |
| CS1# | Chip select 1 | Active-low primary chip enable; must be low with CS2 high for normal read/write operations. |
| CS2 | Chip select 2 | Active-high secondary chip enable; low state forces standby and enables low-VCC data retention. |
| OE# | Output enable | Active-low control for output drivers; high disables outputs to high-impedance regardless of CS state. |
| WE# | Write enable | Active-low write strobe; initiates write cycles only when CS1# low, CS2 high, and LB#/UB# asserted. |
| LB# | Lower byte select | Active-low enable for I/O0–I/O7; allows independent 8-bit writes without disturbing upper byte. |
| UB# | Upper byte select | Active-low enable for I/O8–I/O15; enables selective upper-byte access in mixed-width systems. |
| NC | No connection | Unbonded pins (positions B1, D1, F1, G1, H1 on TSOP); must remain unconnected and unstubbed. |
Key Features
| Feature | Design Value |
|---|---|
| Advanced LPSRAM technology | Enables 4Mb density in compact 44-pin TSOP II package while maintaining 45ns speed and sub-µA standby. |
| Triple standby entry modes | Supports retention activation via CS2 low, CS1# high (with CS2 high), or simultaneous UB#/LB# high - simplifying power sequencing. |
| Low-voltage data retention | Maintains valid data at VCC as low as 1.5V, enabling use with 1.8V–3.3V backup sources without external regulators. |
| Byte-selectable write architecture | Eliminates need for external byte masking logic; reduces PCB area and signal count in 8-bit peripheral interfaces. |
| TTL-compatible I/O | Accepts standard 3.3V logic levels without level shifters; VOH ≥ 2.4V at -1mA ensures robust noise margin in noisy industrial environments. |
Applications
| Industrial PLC Data Buffer | Portable Medical Instrument Memory |
|---|---|
Use Scenario: Storing real-time sensor logs and configuration parameters in programmable logic controllers with intermittent mains power. IC Role / Device Role / Timing Role: Non-volatile backup RAM holding critical state data during AC power loss; retains contents via coin-cell when VCC drops to 1.5V. Use Value: Eliminates need for external EEPROM write cycles and wear leveling, enabling infinite write endurance and deterministic 5ms recovery after power restoration. | Use Scenario: Battery-powered ECG or glucose monitor requiring persistent storage of calibration coefficients and last-measurement history. IC Role / Device Role / Timing Role: Low-leakage SRAM preserving settings across sleep/wake cycles; draws only 0.3µA in standby at room temperature. Use Value: Extends single CR2032 battery life beyond 3 years in sleep-dominated operation, meeting IEC 62304 Class B safety requirements. |
| Automotive Telematics Event Log | Smart Energy Meter Firmware Cache |
Use Scenario: Capturing GPS position snapshots and CAN bus fault codes in vehicle telematics units during ignition-off periods. IC Role / Device Role / Timing Role: High-reliability SRAM with -40°C to +85°C operation; retains data under automotive thermal cycling and vibration. Use Value: Guarantees crash-event data integrity without supercapacitor derating or thermal shutdown, satisfying ISO/SAE 21434 cybersecurity logging mandates. | Use Scenario: Caching tariff tables and consumption history in utility-grade smart meters with 10-year field deployment targets. IC Role / Device Role / Timing Role: Radiation-tolerant static RAM immune to single-event upsets; no refresh circuitry required for long-term data stability. Use Value: Reduces BOM cost versus FRAM alternatives while delivering equivalent 10-year data retention at <1µA average current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10ns access time, 3.3V only (3.135–3.465V), 44-pin TSOP II, 256K × 16-bit (4Mb same density) | Higher speed but narrower VCC range; lacks low-VCC retention below 2.2V | Choose for high-speed control loops where 10ns timing is mandatory and supply regulation is tight. |
| AS6C4008-55ZIN | 55ns access, 2.7–5.5V supply, 44-pin TSOP II, 256K × 16-bit, 2µA standby (typ.) | Wider voltage range but higher standby current; no defined 1.5V retention mode | Prefer when interfacing with mixed 3.3V/5V legacy systems and ultra-low standby is not required. |
Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the RMLV0416EGSB-4S2#HA0 uniquely balances 45ns performance, 0.3µA standby, and 1.5V data retention - making it optimal for battery-critical, thermally demanding, or brown-out-prone embedded systems where reliability trumps raw speed.
Availability
RMLV0416EGSB-4S2#HA0 is available at Aetrix Electronics and suitable for industrial automation, portable medical devices, and automotive telematics requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.
Supply support for RMLV0416EGSB-4S2#HA0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The RMLV0416E Series was developed to deliver high-density, low-power static RAM for battery-backed and energy-harvesting applications where data integrity during power interruption is non-negotiable.
FAQ
What is the minimum supply voltage required for data retention in RMLV0416EGSB-4S2#HA0?
The RMLV0416EGSB-4S2#HA0 guarantees data retention down to VCC = 1.5V when entering retention mode via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V (with CS2 ≥ VCC−0.2V), or simultaneous UB#/LB# ≥ VCC−0.2V. This specification is validated per Renesas R10DS0205EJ0300 Rev.3.00, Page 12, and enables reliable operation with coin-cell or supercapacitor backup sources.
Does RMLV0416EGSB-4S2#HA0 require an external clock or refresh circuitry?
No, the RMLV0416EGSB-4S2#HA0 is a true static RAM and requires no external clock or refresh cycles. Its internal latch-based cell structure maintains data indefinitely as long as VCC remains within specification and appropriate chip-select conditions are met - confirmed in the Block Diagram (Page 3) and Operation Table (Page 3) of the official datasheet.
How does the byte-select functionality work on RMLV0416EGSB-4S2#HA0?
The RMLV0416EGSB-4S2#HA0 uses dedicated LB# (pins 39, 40) and UB# (pins 37, 38) signals to enable independent 8-bit writes: asserting LB# low accesses I/O0–I/O7, asserting UB# low accesses I/O8–I/O15, and asserting both enables full 16-bit writes. This is defined in the Pin Description (Page 2) and Operation Table (Page 3) of the datasheet.
What is the maximum operating temperature range for RMLV0416EGSB-4S2#HA0?
The RMLV0416EGSB-4S2#HA0 is rated for industrial temperature operation from −40°C to +85°C, as specified in the Orderable Part Number table (Page 1) and Absolute Maximum Ratings (Page 4) of the Renesas datasheet R10DS0205EJ0300 Rev.3.00. This range applies to all DC and AC characteristics unless otherwise noted.
Can RMLV0416EGSB-4S2#HA0 be used with 5V logic systems?
No, the RMLV0416EGSB-4S2#HA0 is strictly a 3V-family device with VIH = 2.2V min and VIL = 0.6V max, and absolute maximum input voltage of VCC+0.3V (≤3.9V). Direct connection to 5V logic violates its Absolute Maximum Ratings (Page 4) and risks permanent damage; level translation is mandatory for 5V system interfacing.
RMLV0416EGSB-4S2#HA0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
RMLV0416EGSB-4S2#HA0 FAQ
1.How can I place an order for RMLV0416EGSB-4S2#HA0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV0416EGSB-4S2#HA0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV0416EGSB-4S2#HA0 reliable?
The price and inventory of RMLV0416EGSB-4S2#HA0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0416EGSB-4S2#HA0 is usually 5 days.
3.What payment methods are accepted for RMLV0416EGSB-4S2#HA0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV0416EGSB-4S2#HA0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMLV0416EGSB-4S2#HA0?
RMLV0416EGSB-4S2#HA0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMLV0416EGSB-4S2#HA0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMLV0416EGSB-4S2#HA0?
For technical support, including RMLV0416EGSB-4S2#HA0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0416EGSB-4S2#HA0 requirements.
6.How does Aetrix verify that RMLV0416EGSB-4S2#HA0 is sourced from the original manufacturer or authorized distributors?
All RMLV0416EGSB-4S2#HA0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0416EGSB-4S2#HA0 meets industry standards.
7.What is the process for return or replacement of RMLV0416EGSB-4S2#HA0?
All RMLV0416EGSB-4S2#HA0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0416EGSB-4S2#HA0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV0416EGSB-4S2#HA0 part is unused and in its original packaging.
Return procedure for RMLV0416EGSB-4S2#HA0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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