Renesas RMLV0416EGSB-4S2#HA1

Overview

RMLV0416EGSB-4S2#HA1 from Renesas Electronics is a 4Mb Advanced LPSRAM organized as 262,144-word × 16-bit, operating on a single 3V supply (2.7–3.6V), with 45ns max access time, 0.3µA typical standby current, and TSOP (II) 44-pin packaging - deployed in battery-backed industrial controllers requiring non-volatile data retention during power loss.

For engineers reviewing the RMLV0416EGSB-4S2#HA1 datasheet, RMLV0416EGSB-4S2#HA1 pinout, RMLV0416EGSB-4S2#HA1 application, or RMLV0416EGSB-4S2#HA1 equivalent, this page delivers verified package mapping, byte-select SRAM timing behavior, low-voltage data retention capability, and direct TTL-compatible interface validation for embedded memory subsystem design.

Technical Context

This SRAM implements dual chip select logic (CS1# active-low, CS2 active-high) with independent upper/lower byte control (UB#, LB#) enabling partial-word writes without bus contention. Its three-state I/O architecture supports common data bus sharing in microcontroller-based systems.

It features true static operation with no refresh required, supports battery backup mode at VCC ≥ 1.5V, and guarantees data retention with ISB1 ≤ 0.3µA at +25°C when CS2 ≤ 0.2V or LB#/UB# ≥ VCC−0.2V - critical for fail-safe logging in medical and transportation electronics.

Key Specifications

Pinout & Package

Package: 44-pin Plastic Thin Small Outline Package (TSOP II), 400-mil body width, JEDEC MO-141AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power static RAM applications.

Compared with CY62148EV30LL-45ZAXI and IS62WV25616BLL-45NLI, the RMLV0416EGSB-4S2#HA1 delivers superior ultra-low-power operation (0.3µA vs. ≥1µA) and certified 1.5V data retention - making it the only choice for long-duration battery backup in safety-critical infrastructure.

Availability

RMLV0416EGSB-4S2#HA1 is available at Aetrix Electronics and suitable for industrial PLC data logging, portable medical device event buffering, and automotive ADAS camera buffering requiring stable component supply across extended product lifecycles.

Supply support for RMLV0416EGSB-4S2#HA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC products for automotive, industrial, and IoT applications.

The RMLV0416E Series targets battery-sensitive embedded systems needing reliable, low-power static RAM with guaranteed data retention - optimized for industrial automation, medical instrumentation, and smart energy infrastructure.

FAQ

What is the minimum supply voltage required for data retention in RMLV0416EGSB-4S2#HA1?

The RMLV0416EGSB-4S2#HA1 guarantees data retention down to VCC = 1.5V when entering retention mode via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V, or LB#/UB# ≥ VCC−0.2V. This specification is validated per R10DS0205EJ0300 Rev.3.00, Page 12, and enables robust operation during severe brown-out events without data loss.

Does RMLV0416EGSB-4S2#HA1 require an external clock or refresh circuitry?

No, the RMLV0416EGSB-4S2#HA1 is a true static RAM and requires no clock input or periodic refresh cycles. Its internal latch-based memory cells retain data indefinitely as long as VCC remains within specification and appropriate chip select conditions are met - simplifying system design versus DRAM solutions.

Can RMLV0416EGSB-4S2#HA1 perform byte-level writes without affecting adjacent data?

Yes, the RMLV0416EGSB-4S2#HA1 supports independent lower-byte (I/O0–I/O7) and upper-byte (I/O8–I/O15) writes using LB# and UB# control signals. When only one byte select is asserted low during a write cycle with WE# low, only that 8-bit lane is updated - preserving integrity of the unselected byte.

What is the maximum operating temperature range for RMLV0416EGSB-4S2#HA1?

The RMLV0416EGSB-4S2#HA1 is rated for industrial temperature operation from −40°C to +85°C, as confirmed in the "Orderable part number information" table on Page 1 of R10DS0205EJ0300 Rev.3.00. This range supports deployment in harsh environments such as factory floors, outdoor utility meters, and vehicle under-hood electronics.

Is RMLV0416EGSB-4S2#HA1 pin-compatible with other 44-pin TSOP II SRAMs like the IS62WV25616BLL-45NLI?

While RMLV0416EGSB-4S2#HA1 shares the 44-pin TSOP II footprint and basic signal naming (A0–A17, I/O0–I/O15, CS1#, OE#, WE#), its dual-chip-select architecture (CS1# active-low + CS2 active-high) and dedicated LB#/UB# pins differ from single-CS SRAMs. Direct replacement requires validation of timing and control logic - it is not a drop-in substitute.