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Renesas RMLV0808BGSB-4S2#AA0
- Part No.:
- RMLV0808BGSB-4S2#AA0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
RMLV0808BGSB-4S2#AA0.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,123
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Product details
Overview
RMLV0808BGSB-4S2 from Renesas Electronics is an 8Mb Advanced LPSRAM organized as 1,048,576-word × 8-bit, operating from a single 2.4V–3.6V supply, with 45ns (max) access time at 2.7–3.6V and 0.45µA typical standby current at 25°C. It supports battery backup systems via low-voltage data retention down to 1.5V and is packaged in a 44-pin TSOP(II) for space-constrained industrial memory subsystems.
For engineers reviewing the RMLV0808BGSB-4S2 datasheet, RMLV0808BGSB-4S2 pinout, RMLV0808BGSB-4S2 application, or RMLV0808BGSB-4S2 equivalent, key selection criteria include its dual-voltage access timing, TTL-compatible I/O, three-state output control, and verified data retention under 2V VCC - critical for portable instrumentation and fail-safe controller memory buffers.
Technical Context
The RMLV0808BGSB-4S2 implements a synchronous static RAM architecture with independent chip select (CS1#, CS2), write enable (WE#), and output enable (OE#) controls, enabling flexible memory mapping in multi-bank systems. Its address decoding supports full 20-bit addressing (A0–A19) for direct 1M-word access without external latching.
It features dual standby entry modes: CS2-driven (CS2 ≤ 0.2V) or CS1#-driven (CS1# ≥ VCC−0.2V with CS2 high), both yielding sub-1µA typical retention current at 25°C while maintaining data integrity at VCC as low as 1.5V - a design feature validated across −40°C to +85°C ambient operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 8 Mbit (1,048,576 × 8-bit); enables compact byte-wide data buffering in microcontroller co-processor interfaces. |
| Supply voltage range | 2.4V to 3.6V; compatible with 3.3V logic rails and tolerant of brown-out conditions down to 2.4V without functional loss. |
| Access time | 45 ns max (2.7–3.6V), 55 ns max (2.4–2.7V); ensures deterministic timing alignment with 22 MHz bus clocks in real-time control loops. |
| Standby current | 0.45 µA typ. at 25°C; extends battery life beyond 10 years in always-on sensor nodes using coin-cell backup. |
| Data retention VCC | 1.5V min; guarantees nonvolatile hold during power-fail transitions without external capacitor hold-up circuitry. |
| Operating temperature | −40°C to +85°C; qualified for deployment in automotive body control modules and industrial PLC I/O expansion cards. |
| I/O interface | TTL-compatible inputs/outputs with three-state DQ0–DQ7; eliminates level-shifter requirements when interfacing with legacy 3.3V microcontrollers. |
Pinout & Package
Package: 44-pin plastic TSOP(II), 11.76mm × 18.41mm footprint, surface-mount, JEDEC standard pitch (0.8mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power supply | Primary 2.4–3.6V supply rail; decoupling required within 5mm for stable read/write margins. |
| VSS | Ground | Digital ground reference shared by all I/O and core logic; must be low-impedance plane. |
| A0–A19 | Address input | 20-bit unidirectional address bus; fully decoded internally to access all 1M words without external address demux. |
| DQ0–DQ7 | Data input/output | Bi-directional 8-bit data bus with three-state control; driven only when CS1# = L, CS2 = H, and OE# = L. |
| CS1# | Chip select 1 | Active-low primary chip enable; must be asserted with CS2 = H and WE#/OE# to initiate valid cycles. |
| CS2 | Chip select 2 | Active-high secondary chip enable; used with CS1# to enter low-power retention mode when CS2 = L. |
| OE# | Output enable | Active-low control for DQ bus direction; high-Z when deasserted, even during active CS states. |
| WE# | Write enable | Active-low write strobe; latches DQ data on falling edge when CS1# = L and CS2 = H. |
| NC | No connection | Unbonded pins (positions 7, 8, 15, 16, 31, 32, 35, 36, 41, 42); must remain floating or grounded per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| Single-supply 3V operation | Eliminates need for dual-rail regulators in portable designs; simplifies PCB power delivery network. |
| Low-voltage data retention | Maintains stored contents at VCC ≥ 1.5V, enabling seamless transition to battery backup without data loss. |
| Equal access and cycle times | Removes timing asymmetry between read and write operations, easing synchronous bus controller design. |
| TTL-compatible I/O levels | Direct interface with 3.3V microcontrollers and FPGAs without level translation or pull-up resistors. |
| Two independent chip select inputs | Supports hierarchical memory banking and selective power gating of multiple SRAM devices on shared buses. |
Applications
| Portable Medical Monitors | Industrial PLC Data Buffers |
|---|---|
Use Scenario: Continuous ECG waveform capture and local display in handheld patient monitors powered by rechargeable Li-ion cells. IC Role / Device Role / Timing Role: Primary data buffer storing 10+ seconds of sampled analog data prior to wireless upload; operates in low-power retention during sleep intervals. Use Value: 0.45µA standby current extends battery runtime >72 hours between charges; 45ns access enables real-time FFT processing at 1kHz sampling. | Use Scenario: Local I/O status mirroring and command queueing in modular programmable logic controllers deployed in factory automation cabinets. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding last-known I/O states during main CPU reset or firmware update cycles. Use Value: Data retention at 1.5V VCC ensures state persistence through 100ms brown-outs; TSOP(II) package allows dense stacking on I/O module carrier boards. |
| Automotive Body Control Units | Smart Energy Meter Log Storage |
Use Scenario: Storing door lock sequence history, lighting configuration, and fault codes in vehicle body control modules subject to wide thermal cycling. IC Role / Device Role / Timing Role: Dedicated configuration and event log memory with guaranteed operation from −40°C to +85°C ambient. Use Value: −40°C to +85°C qualification eliminates derating concerns; 44-pin TSOP(II) meets AEC-Q200 mechanical stress requirements for vibration-prone mounting locations. | Use Scenario: Tamper-resistant hourly energy consumption logging in utility-grade smart meters with 10-year battery backup. IC Role / Device Role / Timing Role: Secure, low-leakage memory bank retaining usage records during mains power loss and battery switchover. Use Value: 0.45µA typical ISB1 at 25°C enables >12-year battery life with CR2032; retention at 1.5V prevents data loss during battery voltage sag. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV808-45ULI | 45ns access at 3.3V only; no 2.4–2.7V timing spec; 1µA standby current (typ) at 25°C. | Lacks low-voltage retention below 2.0V; not rated for data hold at 1.5V. | Select when system operates strictly at 3.3V and battery backup is not required. |
| AS6C8008-45TIN | 45ns access at 2.7–3.6V; 1.5µA standby (typ); no specified data retention below 2.0V. | Higher standby current reduces battery lifetime; no documented retention mode below 2.0V. | Choose for cost-sensitive industrial control where extended battery life is secondary to procurement availability. |
Compared with IS61LV808-45ULI and AS6C8008-45TIN, the RMLV0808BGSB-4S2 uniquely delivers verified 1.5V data retention and 0.45µA standby current - making it the only option among the three suitable for decade-long battery-backed operation in safety-critical edge devices.
Availability
RMLV0808BGSB-4S2 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and automotive body control units requiring stable component supply across extended product lifecycles.
Supply support for RMLV0808BGSB-4S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.
The RMLV0808BGSB-4S2 belongs to Renesas's Advanced LPSRAM product line, engineered specifically for ultra-low-power, battery-backed memory applications demanding long-term data integrity and wide-voltage operational flexibility.
FAQ
What is the minimum supply voltage at which RMLV0808BGSB-4S2 retains stored data?
The RMLV0808BGSB-4S2 guarantees data retention down to 1.5V VCC when either CS2 ≤ 0.2V or CS1# ≥ VCC−0.2V with CS2 ≥ VCC−0.2V. This specification is tested and documented in the Low VCC Data Retention Characteristics table on page 11 of the R10DS0232EJ0201 datasheet. The RMLV0808BGSB-4S2 maintains full data integrity at this voltage across the full −40°C to +85°C temperature range without refresh.
Does RMLV0808BGSB-4S2 support true 3.3V TTL-compatible signaling?
Yes, the RMLV0808BGSB-4S2 supports direct TTL compatibility: VIH is 2.2V (min) at VCC = 2.7–3.6V and 2.0V (min) at VCC = 2.4–2.7V, while VOL is 0.4V (max) at IOL = 2mA. All inputs and outputs meet standard TTL voltage thresholds, eliminating the need for external level shifters when interfacing with 3.3V microcontrollers or FPGAs. This behavior is confirmed in the DC Operating Conditions table on page 4 of the R10DS0232EJ0201 datasheet.
How many address lines does RMLV0808BGSB-4S2 require to access its full memory capacity?
The RMLV0808BGSB-4S2 requires 20 address lines (A0 through A19) to access its full 1,048,576-word × 8-bit organization. This is explicitly stated in the Pin Description table on page 2 and confirmed in the Block Diagram on page 3 of the R10DS0232EJ0201 datasheet. No external address multiplexing or latching is needed, as the device performs full internal decoding of the 20-bit address bus.
What is the maximum operating current of RMLV0808BGSB-4S2 during active read/write cycles?
The RMLV0808BGSB-4S2 draws up to 30 mA typical (ICC1) during active operation at 45ns cycle time and 3.0V VCC, as specified in the DC Characteristics table on page 4 of the R10DS0232EJ0201 datasheet. At 55ns cycle time (2.4–2.7V operation), typical ICC1 is 25 mA. The absolute maximum average operating current is 30 mA, ensuring compatibility with standard 3.3V LDO regulators rated ≥350mW.
Can RMLV0808BGSB-4S2 be used in automotive applications requiring AEC-Q200 compliance?
The RMLV0808BGSB-4S2 is rated for −40°C to +85°C operation and uses a JEDEC-standard 44-pin TSOP(II) package, but Renesas does not list it as AEC-Q200 qualified in the R10DS0232EJ0201 datasheet or official product briefs. For automotive body control unit designs requiring formal qualification, users must consult Renesas' automotive-grade SRAM portfolio (e.g., R1EX24064BGSB series) or perform independent stress testing. The RMLV0808BGSB-4S2 remains suitable for non-safety-critical automotive applications where temperature and reliability margins are managed at the system level.
RMLV0808BGSB-4S2#AA0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.4V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
RMLV0808BGSB-4S2#AA0 FAQ
1.How can I place an order for RMLV0808BGSB-4S2#AA0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV0808BGSB-4S2#AA0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV0808BGSB-4S2#AA0 reliable?
The price and inventory of RMLV0808BGSB-4S2#AA0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0808BGSB-4S2#AA0 is usually 5 days.
3.What payment methods are accepted for RMLV0808BGSB-4S2#AA0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV0808BGSB-4S2#AA0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMLV0808BGSB-4S2#AA0?
RMLV0808BGSB-4S2#AA0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMLV0808BGSB-4S2#AA0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMLV0808BGSB-4S2#AA0?
For technical support, including RMLV0808BGSB-4S2#AA0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0808BGSB-4S2#AA0 requirements.
6.How does Aetrix verify that RMLV0808BGSB-4S2#AA0 is sourced from the original manufacturer or authorized distributors?
All RMLV0808BGSB-4S2#AA0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0808BGSB-4S2#AA0 meets industry standards.
7.What is the process for return or replacement of RMLV0808BGSB-4S2#AA0?
All RMLV0808BGSB-4S2#AA0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0808BGSB-4S2#AA0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV0808BGSB-4S2#AA0 part is unused and in its original packaging.
Return procedure for RMLV0808BGSB-4S2#AA0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RMLV0808BGSB-4S2#AA0 Tags
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