Renesas RMLV0808BGSB-4S2#HA0

Overview

RMLV0808BGSB-4S2 from Renesas Electronics is an 8Mb Advanced LPSRAM organized as 1,048,576-word × 8-bit, operating on a single 2.4V–3.6V supply with 45ns access time (at V_CC ≥ 2.7V), 0.45µA typical standby current, and rated for -40°C to +85°C industrial temperature range. It serves as a low-power, battery-backup-capable SRAM in embedded controllers, real-time data buffers, and legacy system memory upgrades.

For engineers reviewing the RMLV0808BGSB-4S2 datasheet, RMLV0808BGSB-4S2 pinout, RMLV0808BGSB-4S2 application, or RMLV0808BGSB-4S2 equivalent, key selection criteria include TSOP(II) package compatibility, dual chip-select architecture, TTL-level I/O compatibility, and guaranteed data retention down to 1.5V.

Technical Context

The RMLV0808BGSB-4S2 implements a fully static memory array with asynchronous parallel interface, supporting independent chip select (CS1# active-low, CS2 active-high) and three-state bidirectional DQ0–DQ7 bus. Its timing architecture enforces equal read/write cycle times (45ns/55ns depending on V_CC) and guarantees output disable within 18ns after control signal deactivation.

It features dual standby entry modes: CS2-driven (low-active) or CS1#-driven (high-active), enabling flexible power management in systems with multiple voltage domains. Data retention is maintained at V_CC ≥ 1.5V with sub-1µA typical ICCDR at 25°C, verified under bias across full industrial temperature range.

Key Specifications

Pinout & Package

44-pin plastic TSOP(II) package with 0.8mm lead pitch, JEDEC MO-141AC compliant, body dimensions 11.76mm × 18.41mm × 1.2mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV808AL-10TLI and AS6C8008-55PCN, the RMLV0808BGSB-4S2 uniquely balances 45ns performance, 0.45µA ultra-low standby, and 2.4V minimum V_CC-making it optimal for battery-constrained, wide-input-voltage industrial systems.

Availability

RMLV0808BGSB-4S2 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device real-time logging, and automotive infotainment caching requiring stable component supply across extended product lifecycles.

Supply support for RMLV0808BGSB-4S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The RMLV0808BGSB-4S2 belongs to Renesas's Advanced LPSRAM family, engineered specifically for ultra-low-power, battery-backed memory in space- and energy-constrained embedded systems.

FAQ

What is the minimum supply voltage required for data retention in the RMLV0808BGSB-4S2?

The RMLV0808BGSB-4S2 guarantees data retention down to 1.5V, as specified in the Low V_CC Data Retention Characteristics table. This applies when either CS2 ≤ 0.2V or CS1# ≥ V_CC−0.2V with CS2 ≥ V_CC−0.2V, and is validated across the full −40°C to +85°C temperature range. The RMLV0808BGSB-4S2 maintains stored data without refresh at this voltage, enabling long-term backup from depleted batteries.

Does the RMLV0808BGSB-4S2 support true static operation without refresh cycles?

Yes, the RMLV0808BGSB-4S2 is a fully static RAM with no refresh requirement. Its memory array retains data indefinitely as long as V_CC remains within specification and appropriate chip-select conditions are met. This eliminates timing-critical refresh overhead in microcontroller-based systems and simplifies firmware design. The RMLV0808BGSB-4S2 achieves this using Renesas's Advanced LPSRAM process technology.

How does the dual chip-select architecture (CS1# and CS2) function in the RMLV0808BGSB-4S2?

In the RMLV0808BGSB-4S2, valid memory access requires CS1# low and CS2 high simultaneously. CS2 low places the device in standby or data retention mode, while CS1# high also forces standby. This dual-control scheme allows independent power gating of memory banks and supports hierarchical address decoding. The RMLV0808BGSB-4S2 uses CS2 to control internal buffers including address, WE#, OE#, and DQ drivers-enabling precise power state management.

What is the maximum operating current of the RMLV0808BGSB-4S2 during active read/write cycles?

The RMLV0808BGSB-4S2 draws up to 30mA average operating current (I_CC1) at 45ns cycle time, V_CC = 3.0V, and full bus activity-per the DC Characteristics table. At slower 55ns cycles, it consumes ≤25mA. This value assumes all control inputs driven actively and DQ lines loaded per test conditions. The RMLV0808BGSB-4S2's current scales predictably with frequency, aiding power budgeting in real-time systems.

Is the RMLV0808BGSB-4S2 pin-compatible with other 44-pin TSOP(II) 8Mb SRAMs?

The RMLV0808BGSB-4S2 follows JEDEC MO-141AC for 44-pin TSOP(II) mechanical dimensions and has confirmed pin assignments matching industry-standard 8Mb ×8 SRAM footprints-including A0–A19, DQ0–DQ7, CS1#, CS2, OE#, WE#, VCC, and VSS. However, functional compatibility depends on timing and electrical behavior: the RMLV0808BGSB-4S2's dual CS architecture and 2.4V minimum V_CC differ from some legacy parts, so timing validation is required.