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Renesas RMLV0816BGBG-4S2#AC0

Part No.:
RMLV0816BGBG-4S2#AC0
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixRMLV0816BGBG-4S2#AC0.pdf
Description:
IC SRAM 8MBIT PARALLEL 48TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,779

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Product details

Overview

RMLV0816BGBG-4S2 from Renesas Electronics is an 8Mb Advanced LPSRAM organized as 524,288-word × 16-bit, operating from a single 2.4V–3.6V supply, with 45ns access time at 2.7–3.6V and 0.45µA typical standby current at +25°C, designed for low-power battery-backed memory applications in industrial control and portable instrumentation.

For engineers reviewing the RMLV0816BGBG-4S2 datasheet, RMLV0816BGBG-4S2 pinout, RMLV0816BGBG-4S2 application, or RMLV0816BGBG-4S2 equivalent, key selection criteria include voltage-flexible timing (45/55ns), dual chip-select architecture, byte-selectable I/O, FBGA-48 packaging, and verified data retention down to 1.5V - all critical for power-constrained embedded systems requiring nonvolatile backup capability.

Technical Context

This static RAM implements a synchronous-compatible asynchronous interface with independent upper/lower byte enables (UB#/LB#), dual chip select (CS1#, CS2) for hierarchical memory mapping, and three-state bidirectional DQ0–DQ15 I/O lines compatible with TTL logic levels across its full 2.4V–3.6V supply range.

Its Advanced LPSRAM process enables ultra-low standby current (0.45µA typ. at 25°C) while maintaining fast random access, and supports three distinct data retention modes-CS2-controlled, CS1#-controlled, or LB#/UB#-controlled-with VDR down to 1.5V and guaranteed tCDR = 0ns for immediate retention entry.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density 8Mb (524,288 × 16-bit); provides compact, high-bandwidth parallel memory for microcontroller co-processing or FPGA buffer storage.
Access time 45ns max at 2.7–3.6V; ensures deterministic read latency in real-time control loops without wait states.
Supply voltage 2.4V–3.6V single rail; interoperates directly with 3.3V logic families and tolerates brown-out conditions down to 2.4V.
Standby current 0.45µA typical at +25°C; enables multi-year battery life in always-on backup mode for RTC or configuration storage.
Data retention VCC 1.5V minimum; guarantees SRAM contents survive deep sleep or main supply failure without external capacitor hold-up.
Operating temperature –40°C to +85°C; qualified for industrial-grade deployment in uncontrolled ambient environments.
Package 48-ball FBGA, 0.75mm pitch; supports high-density PCB layouts with thermal and signal integrity advantages over TSOP.

Pinout & Package

48-ball fine-pitch ball grid array (FBGA) package with 0.75mm ball pitch, optimized for thermal dissipation and high-speed signal routing in space-constrained industrial modules.

Pin/Terminal Circuit Role Design Meaning
VCC Power supply Main 2.4–3.6V supply input; decoupling required per Renesas layout guidelines to maintain AC timing stability.
VSS Ground Digital ground reference; must be connected to low-impedance plane to minimize noise coupling into DQ lines.
A0–A18 Address input 19-bit address bus supporting full 512k-word decoding; A18 enables access to highest memory block.
DQ0–DQ15 Data I/O Bidirectional 16-bit data bus with three-state output control; shared pins reduce footprint versus separate DIN/DOUT.
CS1#, CS2 Chip select Two-level chip enable: CS1# active-low primary select; CS2 active-high secondary select enabling bank isolation.
OE#, WE#, LB#, UB# Control inputs Asynchronous read/write control with byte granularity: OE# enables output driver, WE# initiates write, LB#/UB# mask lower/upper byte.
NC No connection Unbonded pads; must remain unconnected and unstubbed on PCB to prevent impedance discontinuity.

Key Features

Feature Design Value
Single-supply 2.4V–3.6V operation Eliminates need for dual-rail regulators or level shifters when interfacing with 3.3V microcontrollers or FPGAs.
Byte-selectable read/write LB# and UB# allow independent 8-bit writes without disturbing adjacent bytes - essential for compact protocol stack buffers.
TTL-compatible I/O All inputs accept standard TTL thresholds (VIH ≥ 2.0V @ 2.4–2.7V, ≥2.2V @ 2.7–3.6V); no external translation required.
Three retention activation modes CS2-low, CS1#-high, or LB#/UB#-high entry into data retention - offers flexible system-level power management strategies.
Low-capacitance I/O CI/O ≤ 10pF ensures minimal loading on address/data buses, preserving signal integrity at 22MHz+ effective clock rates.

Applications

Industrial PLC Data Logging Medical Device Configuration Storage

Use Scenario: Storing runtime calibration tables and sensor history in programmable logic controllers deployed in factory automation cabinets.

IC Role / Device Role / Timing Role: As a nonvolatile shadow RAM holding critical operational parameters during mains power loss.

Use Value: 0.45µA standby current and 1.5V data retention enable >5-year coin-cell backup life without refresh circuitry.

Use Scenario: Retaining user-defined therapy settings and device serialization in portable ultrasound or infusion pumps.

IC Role / Device Role / Timing Role: Acting as a secure, fast-access configuration memory mapped directly to ARM Cortex-M4 peripherals.

Use Value: 45ns access time and byte-select writes allow real-time parameter updates without interrupt latency penalties.

Automotive Body Control Module Test & Measurement Equipment Buffer

Use Scenario: Caching door lock status, lighting profiles, and seat position memory in 12V automotive body domain controllers.

IC Role / Device Role / Timing Role: Serving as a low-quiescent-current SRAM interfaced via CAN-connected MCU's parallel memory controller.

Use Value: –40°C to +85°C rating and FBGA package withstand thermal cycling in under-hood environments.

Use Scenario: Providing high-speed waveform capture buffer in handheld oscilloscopes and logic analyzers.

IC Role / Device Role / Timing Role: Functioning as a 16-bit-wide FIFO buffer between ADC front-end and ARM-based processing engine.

Use Value: Equal access/cycle times (45ns) and common DQ bus simplify timing closure in burst-mode acquisition paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-45ZSXIT 512K × 16-bit, 45ns, 3.3V only (3.135–3.465V), 100µA standby current Lacks voltage flexibility and ultra-low standby; unsuitable for battery backup below 3.1V Choose only if system operates strictly at 3.3V with no brown-out risk and higher standby current acceptable.
IS61WV51216BLL-10MLI 512K × 16-bit, 10ns access, 3.3V supply, 25µA standby, 48-pin TSOP-II Faster but higher power; TSOP-II package limits board density vs. FBGA Select when nanosecond-level latency dominates over power and size constraints, and PCB layout permits larger footprint.

Compared with CY62167EV30LL-45ZSXIT and IS61WV51216BLL-10MLI, the RMLV0816BGBG-4S2 uniquely balances sub-microamp standby, 1.5V data retention, and 45ns performance in an industry-standard FBGA - making it the only option among the three qualified for long-duration battery-backed operation in thermally demanding industrial enclosures.

Availability

RMLV0816BGBG-4S2 is available at Aetrix Electronics and suitable for industrial control, medical instrumentation, and automotive body electronics requiring stable component supply, extended temperature support, and verified low-power memory retention.

Supply support for RMLV0816BGBG-4S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The RMLV0816BGBG-4S2 belongs to Renesas' Advanced LPSRAM product line, engineered specifically for ultra-low-power, high-reliability embedded memory applications where battery backup, wide voltage operation, and industrial temperature resilience are mandatory.

FAQ

What is the minimum supply voltage required for data retention in the RMLV0816BGBG-4S2?

The RMLV0816BGBG-4S2 guarantees data retention down to 1.5V VCC, as specified in the Low VCC Data Retention Characteristics table (Page 12). This applies across all three retention activation modes - CS2-controlled, CS1#-controlled, or LB#/UB#-controlled - and is validated at temperatures up to +85°C. The RMLV0816BGBG-4S2 maintains stored data without refresh at this voltage, enabling robust operation during deep brown-out events.

Does the RMLV0816BGBG-4S2 support true 16-bit parallel access, and how is byte masking implemented?

Yes, the RMLV0816BGBG-4S2 supports full 16-bit parallel access via DQ0–DQ15, with independent lower-byte (DQ0–DQ7) and upper-byte (DQ8–DQ15) control using LB# and UB# signals. When LB# is low and UB# is high, only the lower byte is written or read; when UB# is low and LB# is high, only the upper byte is accessed. Both signals low enables full 16-bit operation. This functionality is confirmed in the Operation Table (Page 3) and timing waveforms (Pages 7–11) of the RMLV0816BGBG-4S2 datasheet.

What is the maximum operating frequency implied by the RMLV0816BGBG-4S2's 45ns access time?

The RMLV0816BGBG-4S2's 45ns access time (at VCC = 2.7–3.6V) corresponds to a maximum sustained read/write cycle rate of approximately 22.2 MHz (1 / 45ns). However, actual system throughput depends on bus protocol overhead, address setup/hold requirements, and control signal timing margins - all detailed in the AC Characteristics table (Page 5). The RMLV0816BGBG-4S2 does not include internal clock circuitry; it is an asynchronous SRAM requiring externally generated control strobes.

How does the dual chip select (CS1# and CS2) architecture of the RMLV0816BGBG-4S2 improve system design flexibility?

The RMLV0816BGBG-4S2 uses CS1# (active-low) as the primary chip select and CS2 (active-high) as a secondary enable that gates internal buffers. This allows hierarchical memory mapping: CS2 can be used to globally enable/disable multiple RMLV0816BGBG-4S2 devices in a bank, while CS1# selects individual units. It also enables three distinct data retention entry methods - CS2-low, CS1#-high, or LB#/UB#-high - giving firmware multiple low-overhead paths to enter ultra-low-power mode without reconfiguring address decoding logic. This dual-CS scheme is explicitly defined in the Pin Description and Operation Table (Pages 2–3).

Is the RMLV0816BGBG-4S2 pinout compatible with other 48-ball FBGA SRAMs, such as the ISSI IS61WV51216BLL series?

No, the RMLV0816BGBG-4S2 is not pin-to-pin compatible with the IS61WV51216BLL series or other vendor's 48-ball FBGA SRAMs. Its pin arrangement - including placement of VCC/VSS balls, address bit ordering (A0–A18), and dedicated CS2/UB#/LB# positions - is unique to Renesas' Advanced LPSRAM family and documented in Figure 1 (Page 2) of the RMLV0816BGBG-4S2 datasheet. PCB layout must follow Renesas' recommended land pattern and routing guidelines to ensure signal integrity and thermal performance.

RMLV0816BGBG-4S2#AC0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
8Mbit
Memory Organization:
512K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.4V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TFBGA (7.5x8.5)

RMLV0816BGBG-4S2#AC0 FAQ

1.How can I place an order for RMLV0816BGBG-4S2#AC0 through Aetrix?

Please submit a Request for Quotation (RFQ) for RMLV0816BGBG-4S2#AC0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RMLV0816BGBG-4S2#AC0 reliable?

The price and inventory of RMLV0816BGBG-4S2#AC0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0816BGBG-4S2#AC0 is usually 5 days.

3.What payment methods are accepted for RMLV0816BGBG-4S2#AC0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV0816BGBG-4S2#AC0 transactions.

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4.How is shipping managed for RMLV0816BGBG-4S2#AC0?

RMLV0816BGBG-4S2#AC0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RMLV0816BGBG-4S2#AC0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RMLV0816BGBG-4S2#AC0?

For technical support, including RMLV0816BGBG-4S2#AC0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0816BGBG-4S2#AC0 requirements.

6.How does Aetrix verify that RMLV0816BGBG-4S2#AC0 is sourced from the original manufacturer or authorized distributors?

All RMLV0816BGBG-4S2#AC0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0816BGBG-4S2#AC0 meets industry standards.

7.What is the process for return or replacement of RMLV0816BGBG-4S2#AC0?

All RMLV0816BGBG-4S2#AC0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0816BGBG-4S2#AC0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RMLV0816BGBG-4S2#AC0 part is unused and in its original packaging.

Return procedure for RMLV0816BGBG-4S2#AC0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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