Renesas RMLV0816BGBG-4S2#AC0
- Part No.:
- RMLV0816BGBG-4S2#AC0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
RMLV0816BGBG-4S2#AC0.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
RMLV0816BGBG-4S2 from Renesas Electronics is an 8Mb Advanced LPSRAM organized as 524,288-word × 16-bit, operating from a single 2.4V–3.6V supply, with 45ns access time at 2.7–3.6V and 0.45µA typical standby current at +25°C, designed for low-power battery-backed memory applications in industrial control and portable instrumentation.
For engineers reviewing the RMLV0816BGBG-4S2 datasheet, RMLV0816BGBG-4S2 pinout, RMLV0816BGBG-4S2 application, or RMLV0816BGBG-4S2 equivalent, key selection criteria include voltage-flexible timing (45/55ns), dual chip-select architecture, byte-selectable I/O, FBGA-48 packaging, and verified data retention down to 1.5V - all critical for power-constrained embedded systems requiring nonvolatile backup capability.
Technical Context
This static RAM implements a synchronous-compatible asynchronous interface with independent upper/lower byte enables (UB#/LB#), dual chip select (CS1#, CS2) for hierarchical memory mapping, and three-state bidirectional DQ0–DQ15 I/O lines compatible with TTL logic levels across its full 2.4V–3.6V supply range.
Its Advanced LPSRAM process enables ultra-low standby current (0.45µA typ. at 25°C) while maintaining fast random access, and supports three distinct data retention modes-CS2-controlled, CS1#-controlled, or LB#/UB#-controlled-with VDR down to 1.5V and guaranteed tCDR = 0ns for immediate retention entry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 8Mb (524,288 × 16-bit); provides compact, high-bandwidth parallel memory for microcontroller co-processing or FPGA buffer storage. |
| Access time | 45ns max at 2.7–3.6V; ensures deterministic read latency in real-time control loops without wait states. |
| Supply voltage | 2.4V–3.6V single rail; interoperates directly with 3.3V logic families and tolerates brown-out conditions down to 2.4V. |
| Standby current | 0.45µA typical at +25°C; enables multi-year battery life in always-on backup mode for RTC or configuration storage. |
| Data retention VCC | 1.5V minimum; guarantees SRAM contents survive deep sleep or main supply failure without external capacitor hold-up. |
| Operating temperature | –40°C to +85°C; qualified for industrial-grade deployment in uncontrolled ambient environments. |
| Package | 48-ball FBGA, 0.75mm pitch; supports high-density PCB layouts with thermal and signal integrity advantages over TSOP. |
Pinout & Package
48-ball fine-pitch ball grid array (FBGA) package with 0.75mm ball pitch, optimized for thermal dissipation and high-speed signal routing in space-constrained industrial modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power supply | Main 2.4–3.6V supply input; decoupling required per Renesas layout guidelines to maintain AC timing stability. |
| VSS | Ground | Digital ground reference; must be connected to low-impedance plane to minimize noise coupling into DQ lines. |
| A0–A18 | Address input | 19-bit address bus supporting full 512k-word decoding; A18 enables access to highest memory block. |
| DQ0–DQ15 | Data I/O | Bidirectional 16-bit data bus with three-state output control; shared pins reduce footprint versus separate DIN/DOUT. |
| CS1#, CS2 | Chip select | Two-level chip enable: CS1# active-low primary select; CS2 active-high secondary select enabling bank isolation. |
| OE#, WE#, LB#, UB# | Control inputs | Asynchronous read/write control with byte granularity: OE# enables output driver, WE# initiates write, LB#/UB# mask lower/upper byte. |
| NC | No connection | Unbonded pads; must remain unconnected and unstubbed on PCB to prevent impedance discontinuity. |
Key Features
| Feature | Design Value |
|---|---|
| Single-supply 2.4V–3.6V operation | Eliminates need for dual-rail regulators or level shifters when interfacing with 3.3V microcontrollers or FPGAs. |
| Byte-selectable read/write | LB# and UB# allow independent 8-bit writes without disturbing adjacent bytes - essential for compact protocol stack buffers. |
| TTL-compatible I/O | All inputs accept standard TTL thresholds (VIH ≥ 2.0V @ 2.4–2.7V, ≥2.2V @ 2.7–3.6V); no external translation required. |
| Three retention activation modes | CS2-low, CS1#-high, or LB#/UB#-high entry into data retention - offers flexible system-level power management strategies. |
| Low-capacitance I/O | CI/O ≤ 10pF ensures minimal loading on address/data buses, preserving signal integrity at 22MHz+ effective clock rates. |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
|
Use Scenario: Storing runtime calibration tables and sensor history in programmable logic controllers deployed in factory automation cabinets. IC Role / Device Role / Timing Role: As a nonvolatile shadow RAM holding critical operational parameters during mains power loss. Use Value: 0.45µA standby current and 1.5V data retention enable >5-year coin-cell backup life without refresh circuitry. |
Use Scenario: Retaining user-defined therapy settings and device serialization in portable ultrasound or infusion pumps. IC Role / Device Role / Timing Role: Acting as a secure, fast-access configuration memory mapped directly to ARM Cortex-M4 peripherals. Use Value: 45ns access time and byte-select writes allow real-time parameter updates without interrupt latency penalties. |
| Automotive Body Control Module | Test & Measurement Equipment Buffer |
|
Use Scenario: Caching door lock status, lighting profiles, and seat position memory in 12V automotive body domain controllers. IC Role / Device Role / Timing Role: Serving as a low-quiescent-current SRAM interfaced via CAN-connected MCU's parallel memory controller. Use Value: –40°C to +85°C rating and FBGA package withstand thermal cycling in under-hood environments. |
Use Scenario: Providing high-speed waveform capture buffer in handheld oscilloscopes and logic analyzers. IC Role / Device Role / Timing Role: Functioning as a 16-bit-wide FIFO buffer between ADC front-end and ARM-based processing engine. Use Value: Equal access/cycle times (45ns) and common DQ bus simplify timing closure in burst-mode acquisition paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXIT | 512K × 16-bit, 45ns, 3.3V only (3.135–3.465V), 100µA standby current | Lacks voltage flexibility and ultra-low standby; unsuitable for battery backup below 3.1V | Choose only if system operates strictly at 3.3V with no brown-out risk and higher standby current acceptable. |
| IS61WV51216BLL-10MLI | 512K × 16-bit, 10ns access, 3.3V supply, 25µA standby, 48-pin TSOP-II | Faster but higher power; TSOP-II package limits board density vs. FBGA | Select when nanosecond-level latency dominates over power and size constraints, and PCB layout permits larger footprint. |
Compared with CY62167EV30LL-45ZSXIT and IS61WV51216BLL-10MLI, the RMLV0816BGBG-4S2 uniquely balances sub-microamp standby, 1.5V data retention, and 45ns performance in an industry-standard FBGA - making it the only option among the three qualified for long-duration battery-backed operation in thermally demanding industrial enclosures.
Availability
RMLV0816BGBG-4S2 is available at Aetrix Electronics and suitable for industrial control, medical instrumentation, and automotive body electronics requiring stable component supply, extended temperature support, and verified low-power memory retention.
Supply support for RMLV0816BGBG-4S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The RMLV0816BGBG-4S2 belongs to Renesas' Advanced LPSRAM product line, engineered specifically for ultra-low-power, high-reliability embedded memory applications where battery backup, wide voltage operation, and industrial temperature resilience are mandatory.
FAQ
What is the minimum supply voltage required for data retention in the RMLV0816BGBG-4S2?
The RMLV0816BGBG-4S2 guarantees data retention down to 1.5V VCC, as specified in the Low VCC Data Retention Characteristics table (Page 12). This applies across all three retention activation modes - CS2-controlled, CS1#-controlled, or LB#/UB#-controlled - and is validated at temperatures up to +85°C. The RMLV0816BGBG-4S2 maintains stored data without refresh at this voltage, enabling robust operation during deep brown-out events.
Does the RMLV0816BGBG-4S2 support true 16-bit parallel access, and how is byte masking implemented?
Yes, the RMLV0816BGBG-4S2 supports full 16-bit parallel access via DQ0–DQ15, with independent lower-byte (DQ0–DQ7) and upper-byte (DQ8–DQ15) control using LB# and UB# signals. When LB# is low and UB# is high, only the lower byte is written or read; when UB# is low and LB# is high, only the upper byte is accessed. Both signals low enables full 16-bit operation. This functionality is confirmed in the Operation Table (Page 3) and timing waveforms (Pages 7–11) of the RMLV0816BGBG-4S2 datasheet.
What is the maximum operating frequency implied by the RMLV0816BGBG-4S2's 45ns access time?
The RMLV0816BGBG-4S2's 45ns access time (at VCC = 2.7–3.6V) corresponds to a maximum sustained read/write cycle rate of approximately 22.2 MHz (1 / 45ns). However, actual system throughput depends on bus protocol overhead, address setup/hold requirements, and control signal timing margins - all detailed in the AC Characteristics table (Page 5). The RMLV0816BGBG-4S2 does not include internal clock circuitry; it is an asynchronous SRAM requiring externally generated control strobes.
How does the dual chip select (CS1# and CS2) architecture of the RMLV0816BGBG-4S2 improve system design flexibility?
The RMLV0816BGBG-4S2 uses CS1# (active-low) as the primary chip select and CS2 (active-high) as a secondary enable that gates internal buffers. This allows hierarchical memory mapping: CS2 can be used to globally enable/disable multiple RMLV0816BGBG-4S2 devices in a bank, while CS1# selects individual units. It also enables three distinct data retention entry methods - CS2-low, CS1#-high, or LB#/UB#-high - giving firmware multiple low-overhead paths to enter ultra-low-power mode without reconfiguring address decoding logic. This dual-CS scheme is explicitly defined in the Pin Description and Operation Table (Pages 2–3).
Is the RMLV0816BGBG-4S2 pinout compatible with other 48-ball FBGA SRAMs, such as the ISSI IS61WV51216BLL series?
No, the RMLV0816BGBG-4S2 is not pin-to-pin compatible with the IS61WV51216BLL series or other vendor's 48-ball FBGA SRAMs. Its pin arrangement - including placement of VCC/VSS balls, address bit ordering (A0–A18), and dedicated CS2/UB#/LB# positions - is unique to Renesas' Advanced LPSRAM family and documented in Figure 1 (Page 2) of the RMLV0816BGBG-4S2 datasheet. PCB layout must follow Renesas' recommended land pattern and routing guidelines to ensure signal integrity and thermal performance.
RMLV0816BGBG-4S2#AC0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.4V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (7.5x8.5)
RMLV0816BGBG-4S2#AC0 FAQ
1.How can I place an order for RMLV0816BGBG-4S2#AC0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV0816BGBG-4S2#AC0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV0816BGBG-4S2#AC0 reliable?
The price and inventory of RMLV0816BGBG-4S2#AC0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0816BGBG-4S2#AC0 is usually 5 days.
3.What payment methods are accepted for RMLV0816BGBG-4S2#AC0?
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5.How can I obtain technical support or documentation for RMLV0816BGBG-4S2#AC0?
For technical support, including RMLV0816BGBG-4S2#AC0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0816BGBG-4S2#AC0 requirements.
6.How does Aetrix verify that RMLV0816BGBG-4S2#AC0 is sourced from the original manufacturer or authorized distributors?
All RMLV0816BGBG-4S2#AC0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0816BGBG-4S2#AC0 meets industry standards.
7.What is the process for return or replacement of RMLV0816BGBG-4S2#AC0?
All RMLV0816BGBG-4S2#AC0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0816BGBG-4S2#AC0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV0816BGBG-4S2#AC0 part is unused and in its original packaging.
Return procedure for RMLV0816BGBG-4S2#AC0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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