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Renesas RMLV0816BGBG-4S2#KC0

Part No.:
RMLV0816BGBG-4S2#KC0
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixRMLV0816BGBG-4S2#KC0.pdf
Description:
IC SRAM 8MBIT PARALLEL 48TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,045

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Product details

Overview

RMLV0816BGBG-4S2 from Renesas Electronics is an 8Mb Advanced LPSRAM organized as 524,288-word × 16-bit, operating on a single 2.4V–3.6V supply, with 45ns max access time at 2.7–3.6V and 0.45µA typical standby current at +25°C, deployed in battery-backed industrial control and portable instrumentation systems.

For engineers reviewing the RMLV0816BGBG-4S2 datasheet, RMLV0816BGBG-4S2 pinout, RMLV0816BGBG-4S2 application, or RMLV0816BGBG-4S2 equivalent, this page delivers verified timing parameters, FBGA-48 package mapping, byte-select operation details, low-voltage data retention behavior, and direct alternatives for memory subsystem redesigns requiring TTL-compatible static RAM with sub-1µA standby.

Technical Context

This device implements a fully asynchronous, common I/O static RAM architecture with dual chip select (CS1# active-low, CS2 active-high), independent upper/lower byte enables (UB#/LB#), and three-state output control via OE#. It supports simultaneous read/write operations only through byte-select granularity-not full 16-bit parallel writes without overlap.

Operation relies on strict voltage-level compatibility: VIH = 2.2V min at VCC = 2.4–2.7V and 2.4V min at VCC = 2.7–3.6V; all inputs/outputs are directly TTL-compatible. Data retention is guaranteed down to VCC = 1.5V using any of three control modes-CS2 low, CS1# high with CS2 high, or UB#/LB# high with CS1# low.

Key Specifications

ParameterValue and Actual Design Meaning
Memory size8Mb (524,288 × 16-bit) - provides compact, non-refreshed storage for firmware buffers or real-time data logging in space-constrained embedded designs.
Supply voltage2.4V to 3.6V - enables direct interface with 3.3V logic domains and compatibility with Li-ion backup rails without level-shifting.
Access time45ns max (VCC ≥ 2.7V); 55ns max (VCC = 2.4–2.7V) - ensures deterministic timing margins for microcontroller bus interfaces running up to ~18 MHz.
Standby current0.45µA typ. at +25°C - extends battery life beyond 10 years in always-on monitoring applications powered by coin cells.
Data retention VCC1.5V min - allows reliable memory hold during brown-out conditions or ultra-low-power sleep states without external backup switching.
Package48-ball FBGA, 0.75mm pitch - supports high-density PCB layouts while maintaining thermal performance under continuous operation.
I/O interfaceCommon DQ0–DQ15 with three-state control - reduces signal count and simplifies routing versus separate data-in/data-out architectures.

Pinout & Package

48-ball fine-pitch ball grid array (FBGA) package with 0.75mm ball pitch, footprint compliant with JEDEC MO-270AB standard. Thermal pad not present; bottom-side balls are signal/ground only.

Pin/TerminalCircuit RoleDesign Meaning
VCCPower supplyPrimary 2.4–3.6V core supply; decoupling required within 5mm of ball for stable 45ns timing.
VSSGroundDigital ground reference for all I/O and internal logic; must be connected to low-impedance plane.
A0–A18Address input19-bit address bus supporting full 524k-word decoding; A0–A18 must be stable before CS1# activation.
DQ0–DQ15Data I/OBidirectional 16-bit data bus; high-impedance when CS1# high, CS2 low, OE# high, or LB#/UB# high.
CS1#Chip select 1Active-low primary enable; device selected only when CS1# low AND CS2 high AND WE#/OE# valid.
CS2Chip select 2Active-high secondary enable; disables address/data buffers and enables data retention mode when low.
OE#Output enableActive-low control for DQ bus tristate; does not affect write cycles but gates read data output.
WE#Write enableActive-low write strobe; initiates write when CS1# low, CS2 high, and LB# or UB# low.
LB#, UB#Byte selectIndependent active-low controls for lower (DQ0–DQ7) and upper (DQ8–DQ15) bytes; enable partial writes without bus contention.
NCNo connectionUnbonded balls (positions C1, G1, H3 per top-view diagram); must remain unconnected on PCB.

Key Features

FeatureDesign Value
Single-supply 3V operationEliminates need for dual-rail power design and simplifies compliance with IEC 62368-1 limited energy circuits.
Sub-microamp standby currentEnables >10-year battery life in tamper-detection loggers and remote sensor nodes without periodic wake-up overhead.
Byte-select write capabilityReduces system-level write latency by 50% versus full-word writes when updating configuration registers or status flags.
TTL-compatible signalingDirect interface with legacy 3.3V microcontrollers (e.g., Renesas RX65N, NXP LPC17xx) without level translators.
Multi-mode data retentionThree independent entry paths (CS2 low / CS1# high+CS2 high / UB#/LB# high+CS1# low) allow flexible power-management sequencing.

Applications

Industrial PLC I/O ModulePortable Medical Monitor

Use Scenario: Real-time buffering of analog sensor inputs and digital actuator commands in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state data exchange between ARM Cortex-M7 CPU and FPGA-based I/O interface logic.

Use Value: 45ns access time ensures deterministic response to 10kHz control loops; 0.45µA standby current maintains state during mains failure without supercapacitor recharge delay.

Use Scenario: Storing waveform snapshots and patient alarm history in handheld ECG and SpO₂ analyzers powered by CR2032 coin cells.

IC Role / Device Role / Timing Role: Battery-backed memory holding critical diagnostics during sleep mode, retaining data at VCC ≥ 1.5V.

Use Value: 1.5V data retention threshold matches minimum battery voltage under load, eliminating need for external voltage supervisors or backup switches.

Avionics Data LoggerSmart Energy Meter

Use Scenario: Capturing flight parameter telemetry (GPS, IMU, pressure) in certified airborne recorders with extended temperature range requirements.

IC Role / Device Role / Timing Role: High-reliability static RAM operating across –40°C to +85°C without refresh, interfacing with radiation-tolerant microcontrollers.

Use Value: FBGA-48 package withstands mechanical shock per DO-160 Section 8; 85°C operation supports conduction-cooled avionics bays.

Use Scenario: Holding tariff tables, consumption logs, and firmware update staging in ANSI C12.20-compliant electricity meters with 15-year service life.

IC Role / Device Role / Timing Role: Nonvolatile buffer enabling secure firmware rollback and tamper-evident event logging during power interruptions.

Use Value: Sub-1µA ISB1 current at +85°C ensures >15-year calendar life with primary lithium thionyl chloride battery; byte-select writes minimize EEPROM wear.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV51216AL-10TLI10ns faster access (35ns), 54-pin TSOP-II package, higher ICC1 (35mA typ.), no multi-mode retentionRequires PCB redesign due to different footprint and pinout; better suited for high-speed controller caches than battery backupSelect when speed > power efficiency; verify layout compatibility and thermal derating at +85°C
AS6C8016-55ZIN55ns access time, 48-pin SOP package, 1.5µA ISB1 at +25°C, single retention mode (CS# only)Larger footprint, higher standby draw, simpler control - appropriate for cost-sensitive industrial HMIs without battery constraintsChoose for legacy board upgrades where SOP fits existing land pattern and 1.5µA standby suffices

Compared with RMLV0816BGBG-4S2, the IS61LV51216AL-10TLI trades 0.45µA standby for 10ns speed and TSOP-II layout complexity, while the AS6C8016-55ZIN sacrifices retention flexibility and ultra-low power for SOP manufacturability and lower unit cost.

Availability

RMLV0816BGBG-4S2 is available at Aetrix Electronics and suitable for industrial automation, portable medical devices, and avionics data loggers requiring stable component supply, long-term lifecycle support, and guaranteed traceability.

Supply support for RMLV0816BGBG-4S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The RMLV0816BGBG-4S2 belongs to Renesas' Advanced LPSRAM product line, engineered specifically for ultra-low-power, high-reliability embedded systems where battery backup, wide temperature operation, and deterministic timing are mandatory.

FAQ

What is the minimum supply voltage required to retain data in RMLV0816BGBG-4S2?

The RMLV0816BGBG-4S2 guarantees data retention down to VCC = 1.5V when entering retention mode via any of three supported methods: pulling CS2 ≤ 0.2V, driving CS1# ≥ VCC−0.2V with CS2 ≥ VCC−0.2V, or asserting UB# = LB# ≥ VCC−0.2V while CS1# ≤ 0.2V and CS2 ≥ VCC−0.2V. This specification is validated across the full −40°C to +85°C operating range and is independent of clock or bus activity.

Does RMLV0816BGBG-4S2 support true concurrent read and write operations?

No, the RMLV0816BGBG-4S2 does not support true concurrent read and write. It is an asynchronous static RAM with strictly sequential access: a read cycle requires CS1# low, CS2 high, OE# low, and valid address; a write cycle requires CS1# low, CS2 high, WE# low, and valid LB#/UB# assertion. Attempting simultaneous OE# low and WE# low results in undefined bus states per the operation table.

What is the maximum operating frequency implied by the 45ns access time of RMLV0816BGBG-4S2?

The 45ns access time of RMLV0816BGBG-4S2 defines the minimum address-to-data valid delay under VCC = 2.7–3.6V conditions. It does not imply a maximum clock frequency, as this is an asynchronous device with no internal clock. System-level bus timing depends on controller setup/hold requirements, but sustained burst transfers are limited to ≤22.2 MHz cycle rate (tRC = 45ns) when using full 16-bit word accesses without wait states.

How many address lines does RMLV0816BGBG-4S2 require, and what is their function?

The RMLV0816BGBG-4S2 requires 19 address lines (A0–A18) to decode its full 524,288-word (512k) depth. A0 selects individual 16-bit words within the array; A0–A18 collectively generate the row/column addresses needed for the internal memory matrix. All 19 lines must be driven to valid logic levels before CS1# activation to ensure correct word selection and avoid address glitches.

Can RMLV0816BGBG-4S2 be used with a 2.5V microcontroller I/O interface?

Yes, RMLV0816BGBG-4S2 supports 2.5V I/O interfacing when VCC = 2.4–2.7V: VIH is specified as 2.2V min and VIL as 0.4V max, making it compatible with 2.5V CMOS logic thresholds. However, output drive strength (VOH = 2.0V min at IOH = −0.1mA) requires verification of receiver input thresholds, and system-level noise margin should be confirmed using the 2.4V–2.7V AC timing table (55ns access, 30ns tOE).

RMLV0816BGBG-4S2#KC0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
8Mbit
Memory Organization:
512K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.4V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TFBGA (7.5x8.5)

RMLV0816BGBG-4S2#KC0 FAQ

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Please submit a Request for Quotation (RFQ) for RMLV0816BGBG-4S2#KC0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of RMLV0816BGBG-4S2#KC0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0816BGBG-4S2#KC0 is usually 5 days.

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RMLV0816BGBG-4S2#KC0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RMLV0816BGBG-4S2#KC0?

For technical support, including RMLV0816BGBG-4S2#KC0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0816BGBG-4S2#KC0 requirements.

6.How does Aetrix verify that RMLV0816BGBG-4S2#KC0 is sourced from the original manufacturer or authorized distributors?

All RMLV0816BGBG-4S2#KC0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0816BGBG-4S2#KC0 meets industry standards.

7.What is the process for return or replacement of RMLV0816BGBG-4S2#KC0?

All RMLV0816BGBG-4S2#KC0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0816BGBG-4S2#KC0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RMLV0816BGBG-4S2#KC0 part is unused and in its original packaging.

Return procedure for RMLV0816BGBG-4S2#KC0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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