Renesas RMLV0816BGBG-4S2#KC0
- Part No.:
- RMLV0816BGBG-4S2#KC0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
RMLV0816BGBG-4S2#KC0.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
RMLV0816BGBG-4S2 from Renesas Electronics is an 8Mb Advanced LPSRAM organized as 524,288-word × 16-bit, operating on a single 2.4V–3.6V supply, with 45ns max access time at 2.7–3.6V and 0.45µA typical standby current at +25°C, deployed in battery-backed industrial control and portable instrumentation systems.
For engineers reviewing the RMLV0816BGBG-4S2 datasheet, RMLV0816BGBG-4S2 pinout, RMLV0816BGBG-4S2 application, or RMLV0816BGBG-4S2 equivalent, this page delivers verified timing parameters, FBGA-48 package mapping, byte-select operation details, low-voltage data retention behavior, and direct alternatives for memory subsystem redesigns requiring TTL-compatible static RAM with sub-1µA standby.
Technical Context
This device implements a fully asynchronous, common I/O static RAM architecture with dual chip select (CS1# active-low, CS2 active-high), independent upper/lower byte enables (UB#/LB#), and three-state output control via OE#. It supports simultaneous read/write operations only through byte-select granularity-not full 16-bit parallel writes without overlap.
Operation relies on strict voltage-level compatibility: VIH = 2.2V min at VCC = 2.4–2.7V and 2.4V min at VCC = 2.7–3.6V; all inputs/outputs are directly TTL-compatible. Data retention is guaranteed down to VCC = 1.5V using any of three control modes-CS2 low, CS1# high with CS2 high, or UB#/LB# high with CS1# low.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 8Mb (524,288 × 16-bit) - provides compact, non-refreshed storage for firmware buffers or real-time data logging in space-constrained embedded designs. |
| Supply voltage | 2.4V to 3.6V - enables direct interface with 3.3V logic domains and compatibility with Li-ion backup rails without level-shifting. |
| Access time | 45ns max (VCC ≥ 2.7V); 55ns max (VCC = 2.4–2.7V) - ensures deterministic timing margins for microcontroller bus interfaces running up to ~18 MHz. |
| Standby current | 0.45µA typ. at +25°C - extends battery life beyond 10 years in always-on monitoring applications powered by coin cells. |
| Data retention VCC | 1.5V min - allows reliable memory hold during brown-out conditions or ultra-low-power sleep states without external backup switching. |
| Package | 48-ball FBGA, 0.75mm pitch - supports high-density PCB layouts while maintaining thermal performance under continuous operation. |
| I/O interface | Common DQ0–DQ15 with three-state control - reduces signal count and simplifies routing versus separate data-in/data-out architectures. |
Pinout & Package
48-ball fine-pitch ball grid array (FBGA) package with 0.75mm ball pitch, footprint compliant with JEDEC MO-270AB standard. Thermal pad not present; bottom-side balls are signal/ground only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power supply | Primary 2.4–3.6V core supply; decoupling required within 5mm of ball for stable 45ns timing. |
| VSS | Ground | Digital ground reference for all I/O and internal logic; must be connected to low-impedance plane. |
| A0–A18 | Address input | 19-bit address bus supporting full 524k-word decoding; A0–A18 must be stable before CS1# activation. |
| DQ0–DQ15 | Data I/O | Bidirectional 16-bit data bus; high-impedance when CS1# high, CS2 low, OE# high, or LB#/UB# high. |
| CS1# | Chip select 1 | Active-low primary enable; device selected only when CS1# low AND CS2 high AND WE#/OE# valid. |
| CS2 | Chip select 2 | Active-high secondary enable; disables address/data buffers and enables data retention mode when low. |
| OE# | Output enable | Active-low control for DQ bus tristate; does not affect write cycles but gates read data output. |
| WE# | Write enable | Active-low write strobe; initiates write when CS1# low, CS2 high, and LB# or UB# low. |
| LB#, UB# | Byte select | Independent active-low controls for lower (DQ0–DQ7) and upper (DQ8–DQ15) bytes; enable partial writes without bus contention. |
| NC | No connection | Unbonded balls (positions C1, G1, H3 per top-view diagram); must remain unconnected on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Single-supply 3V operation | Eliminates need for dual-rail power design and simplifies compliance with IEC 62368-1 limited energy circuits. |
| Sub-microamp standby current | Enables >10-year battery life in tamper-detection loggers and remote sensor nodes without periodic wake-up overhead. |
| Byte-select write capability | Reduces system-level write latency by 50% versus full-word writes when updating configuration registers or status flags. |
| TTL-compatible signaling | Direct interface with legacy 3.3V microcontrollers (e.g., Renesas RX65N, NXP LPC17xx) without level translators. |
| Multi-mode data retention | Three independent entry paths (CS2 low / CS1# high+CS2 high / UB#/LB# high+CS1# low) allow flexible power-management sequencing. |
Applications
| Industrial PLC I/O Module | Portable Medical Monitor |
|---|---|
Use Scenario: Real-time buffering of analog sensor inputs and digital actuator commands in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state data exchange between ARM Cortex-M7 CPU and FPGA-based I/O interface logic. Use Value: 45ns access time ensures deterministic response to 10kHz control loops; 0.45µA standby current maintains state during mains failure without supercapacitor recharge delay. | Use Scenario: Storing waveform snapshots and patient alarm history in handheld ECG and SpO₂ analyzers powered by CR2032 coin cells. IC Role / Device Role / Timing Role: Battery-backed memory holding critical diagnostics during sleep mode, retaining data at VCC ≥ 1.5V. Use Value: 1.5V data retention threshold matches minimum battery voltage under load, eliminating need for external voltage supervisors or backup switches. |
| Avionics Data Logger | Smart Energy Meter |
Use Scenario: Capturing flight parameter telemetry (GPS, IMU, pressure) in certified airborne recorders with extended temperature range requirements. IC Role / Device Role / Timing Role: High-reliability static RAM operating across –40°C to +85°C without refresh, interfacing with radiation-tolerant microcontrollers. Use Value: FBGA-48 package withstands mechanical shock per DO-160 Section 8; 85°C operation supports conduction-cooled avionics bays. | Use Scenario: Holding tariff tables, consumption logs, and firmware update staging in ANSI C12.20-compliant electricity meters with 15-year service life. IC Role / Device Role / Timing Role: Nonvolatile buffer enabling secure firmware rollback and tamper-evident event logging during power interruptions. Use Value: Sub-1µA ISB1 current at +85°C ensures >15-year calendar life with primary lithium thionyl chloride battery; byte-select writes minimize EEPROM wear. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV51216AL-10TLI | 10ns faster access (35ns), 54-pin TSOP-II package, higher ICC1 (35mA typ.), no multi-mode retention | Requires PCB redesign due to different footprint and pinout; better suited for high-speed controller caches than battery backup | Select when speed > power efficiency; verify layout compatibility and thermal derating at +85°C |
| AS6C8016-55ZIN | 55ns access time, 48-pin SOP package, 1.5µA ISB1 at +25°C, single retention mode (CS# only) | Larger footprint, higher standby draw, simpler control - appropriate for cost-sensitive industrial HMIs without battery constraints | Choose for legacy board upgrades where SOP fits existing land pattern and 1.5µA standby suffices |
Compared with RMLV0816BGBG-4S2, the IS61LV51216AL-10TLI trades 0.45µA standby for 10ns speed and TSOP-II layout complexity, while the AS6C8016-55ZIN sacrifices retention flexibility and ultra-low power for SOP manufacturability and lower unit cost.
Availability
RMLV0816BGBG-4S2 is available at Aetrix Electronics and suitable for industrial automation, portable medical devices, and avionics data loggers requiring stable component supply, long-term lifecycle support, and guaranteed traceability.
Supply support for RMLV0816BGBG-4S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The RMLV0816BGBG-4S2 belongs to Renesas' Advanced LPSRAM product line, engineered specifically for ultra-low-power, high-reliability embedded systems where battery backup, wide temperature operation, and deterministic timing are mandatory.
FAQ
What is the minimum supply voltage required to retain data in RMLV0816BGBG-4S2?
The RMLV0816BGBG-4S2 guarantees data retention down to VCC = 1.5V when entering retention mode via any of three supported methods: pulling CS2 ≤ 0.2V, driving CS1# ≥ VCC−0.2V with CS2 ≥ VCC−0.2V, or asserting UB# = LB# ≥ VCC−0.2V while CS1# ≤ 0.2V and CS2 ≥ VCC−0.2V. This specification is validated across the full −40°C to +85°C operating range and is independent of clock or bus activity.
Does RMLV0816BGBG-4S2 support true concurrent read and write operations?
No, the RMLV0816BGBG-4S2 does not support true concurrent read and write. It is an asynchronous static RAM with strictly sequential access: a read cycle requires CS1# low, CS2 high, OE# low, and valid address; a write cycle requires CS1# low, CS2 high, WE# low, and valid LB#/UB# assertion. Attempting simultaneous OE# low and WE# low results in undefined bus states per the operation table.
What is the maximum operating frequency implied by the 45ns access time of RMLV0816BGBG-4S2?
The 45ns access time of RMLV0816BGBG-4S2 defines the minimum address-to-data valid delay under VCC = 2.7–3.6V conditions. It does not imply a maximum clock frequency, as this is an asynchronous device with no internal clock. System-level bus timing depends on controller setup/hold requirements, but sustained burst transfers are limited to ≤22.2 MHz cycle rate (tRC = 45ns) when using full 16-bit word accesses without wait states.
How many address lines does RMLV0816BGBG-4S2 require, and what is their function?
The RMLV0816BGBG-4S2 requires 19 address lines (A0–A18) to decode its full 524,288-word (512k) depth. A0 selects individual 16-bit words within the array; A0–A18 collectively generate the row/column addresses needed for the internal memory matrix. All 19 lines must be driven to valid logic levels before CS1# activation to ensure correct word selection and avoid address glitches.
Can RMLV0816BGBG-4S2 be used with a 2.5V microcontroller I/O interface?
Yes, RMLV0816BGBG-4S2 supports 2.5V I/O interfacing when VCC = 2.4–2.7V: VIH is specified as 2.2V min and VIL as 0.4V max, making it compatible with 2.5V CMOS logic thresholds. However, output drive strength (VOH = 2.0V min at IOH = −0.1mA) requires verification of receiver input thresholds, and system-level noise margin should be confirmed using the 2.4V–2.7V AC timing table (55ns access, 30ns tOE).
RMLV0816BGBG-4S2#KC0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.4V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (7.5x8.5)
RMLV0816BGBG-4S2#KC0 FAQ
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6.How does Aetrix verify that RMLV0816BGBG-4S2#KC0 is sourced from the original manufacturer or authorized distributors?
All RMLV0816BGBG-4S2#KC0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0816BGBG-4S2#KC0 meets industry standards.
7.What is the process for return or replacement of RMLV0816BGBG-4S2#KC0?
All RMLV0816BGBG-4S2#KC0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0816BGBG-4S2#KC0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV0816BGBG-4S2#KC0 part is unused and in its original packaging.
Return procedure for RMLV0816BGBG-4S2#KC0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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