Renesas RMLV0816BGSA-4S2#AA0
- Part No.:
- RMLV0816BGSA-4S2#AA0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
RMLV0816BGSA-4S2#AA0.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:

- Shipping:

Inventory:334
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Product details
Overview
RMLV0816BGSA-4S2 from Renesas Electronics is an 8Mb Advanced LPSRAM organized as 524,288-word × 16-bit (or 1,048,576-word × 8-bit), operating from a single 2.4V–3.6V supply with 45ns max access time at 2.7–3.6V, 0.45µA typical standby current, and rated for -40°C to +85°C industrial temperature range - deployed in battery-backed data logging and real-time control buffers.
For engineers reviewing the RMLV0816BGSA-4S2 datasheet, RMLV0816BGSA-4S2 pinout, RMLV0816BGSA-4S2 application, or RMLV0816BGSA-4S2 equivalent, key selection criteria include byte/word mode flexibility, TSOP(I)-48 package compatibility, low-voltage data retention down to 1.5V, TTL-level I/O compatibility, and dual chip select architecture for memory banking.
Technical Context
This static RAM implements a dual-bank addressable memory array with configurable byte/word operation via BYTE# control, supporting simultaneous upper/lower byte writes using UB#/LB# signals and full-word access when BYTE# is low. Its internal architecture includes separate column decoders for x8/x16 modes, dedicated sense/write amplifiers, and independent DQ buffers enabling three-state output control per access cycle.
The device uses Renesas's Advanced LPSRAM process to achieve sub-microamp standby current while maintaining 45ns access at 3.0V, with all DC and AC timing parameters fully specified across the full industrial voltage (2.4–3.6V) and temperature (-40°C to +85°C) range - including tCLZ/tCHZ <10ns/20ns transitions and tOHZ/tWHZ ≤20ns high-impedance enable/disable times critical for bus arbitration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 8 Mbit (524,288 × 16 or 1,048,576 × 8) - supports flexible data bus width without external multiplexing |
| Supply voltage | 2.4V to 3.6V - compatible with 3.3V logic systems and tolerant of brown-out conditions during battery backup |
| Access time | 45 ns max (2.7–3.6V); 55 ns max (2.4–2.7V) - enables direct interface with legacy microcontrollers running at ≤22 MHz |
| Standby current | 0.45 µA typ. at 25°C - extends battery life to years in always-on monitoring applications |
| Data retention VCC | 1.5V min - maintains stored data during deep sleep or power-fail scenarios without auxiliary power |
| Operating temperature | -40°C to +85°C - qualified for industrial control, automotive body electronics, and outdoor embedded systems |
| Package | 48-pin TSOP(I), 12mm × 20mm - surface-mount compatible with standard reflow profiles and PCB assembly lines |
Pinout & Package
48-pin plastic TSOP(I) package (12mm × 20mm), JEDEC standard footprint, suitable for automated placement and reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power supply | Primary 2.4–3.6V supply rail; decoupling required within 10 mm for stable read/write margins |
| VSS | Ground | Digital ground reference; two dedicated pins (pins 24 and 47) reduce ground bounce in high-speed cycles |
| A0–A18 | Address input (word mode) | 19-bit word address bus; A-1 used only in byte mode for 8-bit addressing extension |
| DQ0–DQ15 | Data input/output | Bidirectional 16-bit data bus with three-state control; shared I/O eliminates need for external transceivers |
| CS1#, CS2 | Chip select inputs | Two-level chip enable: CS1# active-low + CS2 active-high required for access; enables memory banking |
| OE#, WE# | Output/write enable | Asynchronous controls: OE# gates output drivers; WE# initiates write cycles independent of address change |
| UB#, LB#, BYTE# | Byte/word mode control | UB#/LB# select upper/lower byte; BYTE# = high enables byte mode (A-1 active), low enables word mode |
| NC | No connection | Pins 9, 10, 12 are unconnected; must remain floating or tied to VSS per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Single-supply 2.4–3.6V operation | Eliminates dual-rail design complexity and reduces BOM count in portable and battery-powered systems |
| 0.45 µA typical standby current | Enables >5-year data retention on coin-cell batteries in tamper-detection or event-logging applications |
| Configurable x8/x16 organization | Reduces PCB layer count by avoiding external address multiplexing or data-width translation logic |
| TTL-compatible I/O levels | Direct interface with legacy 3.3V microcontrollers (e.g., Renesas RX, SH, or ARM Cortex-M3/M4) without level shifters |
| Low-voltage data retention (1.5V) | Maintains SRAM contents during brown-out or backup-switchover events without capacitor hold-up circuitry |
Applications
| Industrial Data Logger | Automotive Body Control Module |
|---|---|
|
Use Scenario: Continuous timestamped sensor sampling (temperature, voltage, CAN status) with periodic flash offload. IC Role / Device Role / Timing Role: High-reliability buffer memory holding up to 512k 16-bit samples before non-volatile storage. Use Value: 45ns access ensures no sample loss at 20 kS/s; 0.45µA standby preserves battery charge between ignition cycles. |
Use Scenario: Real-time door lock actuation sequence buffering and diagnostic event storage. IC Role / Device Role / Timing Role: Dual-port accessible SRAM storing encrypted command queues and fault logs. Use Value: TSOP(I) package withstands automotive thermal cycling; -40°C to +85°C rating ensures operation in trunk-mounted ECUs. |
| Medical Infusion Pump Controller | Smart Energy Meter |
|
Use Scenario: Storing calibrated flow rate tables, dose history, and safety-critical alarm timestamps. IC Role / Device Role / Timing Role: Battery-backed SRAM retaining configuration and audit trail during AC power loss. Use Value: 1.5V data retention allows use of small backup capacitors; byte-mode support simplifies 8-bit MCU interfacing. |
Use Scenario: Accumulating kWh readings, tariff schedules, and communication protocol buffers in AMI meters. IC Role / Device Role / Timing Role: Low-power memory bank for firmware update staging and secure metering registers. Use Value: Dual CS architecture enables isolated firmware/data partitioning; 48-pin TSOP fits constrained meter PCB footprints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV51216AL-10TLI | 10ns faster access (35ns), but 5µA standby current - 11× higher than RMLV0816BGSA-4S2 | Preferred where speed dominates power budget (e.g., FPGA co-processor buffers) | Select if system clock >28 MHz and battery life is secondary |
| AS6C8016-55PCN | Same 45ns access, but 5.5V-tolerant I/O and -20°C to +70°C temp range - narrower than RMLV0816BGSA-4S2 | Suitable for commercial-grade consumer devices lacking extended temperature needs | Choose only for cost-sensitive, non-industrial designs with no battery backup requirement |
Compared with IS61LV51216AL-10TLI and AS6C8016-55PCN, the RMLV0816BGSA-4S2 uniquely balances ultra-low standby current (0.45µA), industrial temperature range (-40°C to +85°C), and 1.5V data retention - making it optimal for long-life, battery-backed embedded systems where reliability under voltage stress is critical.
Availability
RMLV0816BGSA-4S2 is available at Aetrix Electronics and suitable for industrial data loggers, automotive body control modules, and medical infusion pump controllers requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for RMLV0816BGSA-4S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.
The RMLV0816BGSA-4S2 belongs to Renesas's Advanced LPSRAM family, engineered specifically for ultra-low-power, battery-backed memory applications demanding industrial temperature resilience and long-term data integrity.
FAQ
What is the minimum supply voltage required to retain data in RMLV0816BGSA-4S2?
The RMLV0816BGSA-4S2 guarantees data retention down to 1.5V VCC when placed in standby mode via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V, or LB#/UB# ≥ VCC−0.2V. This specification is verified across the full −40°C to +85°C temperature range and enables reliable operation during brown-out conditions without external backup power circuitry. The RMLV0816BGSA-4S2 retains stored data indefinitely at this voltage as long as the retention control conditions are maintained.
Does RMLV0816BGSA-4S2 support both 8-bit and 16-bit data bus configurations?
Yes, the RMLV0816BGSA-4S2 supports configurable x8/x16 organization through the BYTE# pin: when BYTE# is high, it operates in byte mode (1,048,576 × 8) with A-1 as LSB; when BYTE# is low, it operates in word mode (524,288 × 16). This eliminates external data-width translation logic and allows seamless integration with either 8-bit or 16-bit microcontrollers. The RMLV0816BGSA-4S2 maintains identical timing specifications in both modes.
What is the maximum operating frequency supported by RMLV0816BGSA-4S2?
The RMLV0816BGSA-4S2 does not use a clock signal and is asynchronous, so it has no maximum operating frequency. Instead, its performance is defined by access and cycle times: 45ns max at 2.7–3.6V and 55ns max at 2.4–2.7V. These timings allow reliable interfacing with microcontrollers running up to ~22 MHz bus clocks (for 45ns cycles) without wait states. The RMLV0816BGSA-4S2 achieves this using purely combinational address-to-data propagation.
How does the dual chip select (CS1# and CS2) architecture benefit system design with RMLV0816BGSA-4S2?
The RMLV0816BGSA-4S2 requires both CS1# (active-low) and CS2 (active-high) to be asserted for memory access, enabling hierarchical memory banking - for example, CS2 can select a memory group while CS1# selects individual devices within that group. This reduces address decoder complexity in multi-SRAM systems and improves noise immunity by requiring complementary logic levels. The RMLV0816BGSA-4S2 also supports independent standby entry via CS2 alone, simplifying power sequencing.
Is RMLV0816BGSA-4S2 pin-compatible with other 48-pin TSOP(I) SRAMs like the IS61LV51216 series?
No, the RMLV0816BGSA-4S2 is not pin-compatible with IS61LV51216 series devices due to differences in pin assignment: RMLV0816BGSA-4S2 places A16 on pin 23 and BYTE# on pin 22, whereas IS61LV51216AL-10TLI assigns A16 to pin 22 and lacks a dedicated BYTE# pin. Signal routing, PCB layout, and firmware initialization sequences must be redesigned when substituting. The RMLV0816BGSA-4S2 requires explicit BYTE# control for mode selection, unlike fixed-x16 alternatives.
RMLV0816BGSA-4S2#AA0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8, 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.4V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
RMLV0816BGSA-4S2#AA0 FAQ
1.How can I place an order for RMLV0816BGSA-4S2#AA0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV0816BGSA-4S2#AA0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV0816BGSA-4S2#AA0 reliable?
The price and inventory of RMLV0816BGSA-4S2#AA0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0816BGSA-4S2#AA0 is usually 5 days.
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5.How can I obtain technical support or documentation for RMLV0816BGSA-4S2#AA0?
For technical support, including RMLV0816BGSA-4S2#AA0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0816BGSA-4S2#AA0 requirements.
6.How does Aetrix verify that RMLV0816BGSA-4S2#AA0 is sourced from the original manufacturer or authorized distributors?
All RMLV0816BGSA-4S2#AA0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0816BGSA-4S2#AA0 meets industry standards.
7.What is the process for return or replacement of RMLV0816BGSA-4S2#AA0?
All RMLV0816BGSA-4S2#AA0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0816BGSA-4S2#AA0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV0816BGSA-4S2#AA0 part is unused and in its original packaging.
Return procedure for RMLV0816BGSA-4S2#AA0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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