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Renesas RMLV0816BGSB-4S2#AA0
- Part No.:
- RMLV0816BGSB-4S2#AA0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
RMLV0816BGSB-4S2#AA0.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,349
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Product details
Overview
RMLV0816BGSB-4S2 from Renesas Electronics is an 8Mb Advanced LPSRAM organized as 524,288-word × 16-bit, operating from a single 2.4V–3.6V supply, with 45ns max access time at 2.7–3.6V and 0.45µA typical standby current, designed for low-power battery-backed memory applications in industrial control and portable instrumentation.
For engineers reviewing the RMLV0816BGSB-4S2 datasheet, RMLV0816BGSB-4S2 pinout, RMLV0816BGSB-4S2 application, or RMLV0816BGSB-4S2 equivalent, this page delivers verified package mapping (44-pin TSOP-II), byte-selectable 16-bit I/O architecture, TTL-compatible interface timing, and battery-retention operation down to 1.5V - all critical for embedded SRAM replacement and power-constrained system design.
Technical Context
The RMLV0816BGSB-4S2 implements a fully static CMOS memory array with independent upper/lower byte enable (UB#/LB#) and three-state bidirectional DQ0–DQ15 I/Os. Its address decoding supports full 19-bit addressing (A0–A18) for 512k-word capacity, with chip select (CS#), output enable (OE#), and write enable (WE#) controlling read/write state transitions.
It features dual-voltage timing compliance: 45ns cycle/AC parameters at 2.7–3.6V and relaxed 55ns specs at 2.4–2.7V, plus guaranteed data retention at VCC ≥ 1.5V when CS# or LB#/UB# are held high - enabling seamless transition to backup power without external logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8Mb (524,288 × 16-bit) - provides compact 1MB addressable space with 16-bit parallel bus efficiency. |
| Supply Voltage Range | 2.4V to 3.6V - enables direct interfacing with 3.3V logic and compatibility with brown-out tolerant systems. |
| Access Time (max) | 45ns at 2.7–3.6V; 55ns at 2.4–2.7V - defines minimum read cycle timing for synchronous microcontroller or FPGA memory controllers. |
| Standby Current (typ) | 0.45µA at +25°C - ensures multi-year battery life in backup mode for real-time clocks and configuration storage. |
| Data Retention Voltage | 1.5V minimum - allows reliable memory hold during deep sleep or main power loss without auxiliary regulators. |
| I/O Interface | TTL-compatible inputs/outputs with three-state DQ bus - eliminates level-shifting requirements in legacy 3.3V designs. |
| Operating Temperature | -40°C to +85°C - qualified for industrial-grade deployment in programmable logic controllers and medical devices. |
Pinout & Package
Package: 44-pin plastic TSOP(II), 11.76mm × 18.41mm body, standard JEDEC MO-141AC footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power supply | Primary 2.4–3.6V supply rail; decoupling required within 10mm of pin. |
| VSS | Ground | Digital ground reference for all I/O and core logic; separate plane recommended. |
| A0–A18 | Address input | 19-bit address bus supporting full 512k-word addressing; no internal latching. |
| DQ0–DQ15 | Data input/output | Bidirectional 16-bit data bus with three-state control; shared pins reduce PCB trace count. |
| CS# | Chip select | Active-low enable for all operations; controls buffer activation and data retention entry. |
| OE# | Output enable | Active-low read gate; asserts DQ outputs only when CS# is active and WE# is high. |
| WE# | Write enable | Active-low write strobe; initiates write cycles when combined with active CS# and LB#/UB#. |
| LB#, UB# | Byte select | Independent active-low enables for lower (DQ0–DQ7) and upper (DQ8–DQ15) bytes - enables partial writes without masking logic. |
Key Features
| Feature | Design Value |
|---|---|
| Single-supply 3V operation | Eliminates need for dual-rail supplies or voltage translators in 3.3V systems. |
| Low standby current (0.45µA typ) | Extends battery life in always-on backup memory applications beyond 10 years at room temperature. |
| Byte-selectable write capability | Reduces bus contention and simplifies firmware by enabling 8-bit updates without full 16-bit masking. |
| Guaranteed data retention at 1.5V | Permits use with coin-cell batteries or supercapacitors without retention-regulator circuitry. |
| TTL-compatible I/O levels | Direct connection to legacy microcontrollers (e.g., Renesas RX, SH, or older ARM7) without level shifters. |
Applications
| Industrial PLC Data Buffer | Medical Device Configuration Storage |
|---|---|
Use Scenario: Storing runtime I/O mapping tables and alarm history in programmable logic controllers with intermittent mains power. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding critical state data during AC dropout; accessed via 16-bit parallel bus from Cortex-M4 MCU. Use Value: 0.45µA standby current enables >5-year coin-cell backup; 45ns access supports deterministic scan-cycle timing under 100µs. |
Use Scenario: Retaining calibration coefficients and patient-specific settings in portable ultrasound units powered by Li-ion batteries. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving EEPROM-like persistence without wear-out limitations during frequent parameter updates. Use Value: 1.5V data retention threshold matches depleted battery voltage; byte-select writes minimize energy per configuration update. |
| Automotive Telematics Log Buffer | Test Equipment Firmware Cache |
Use Scenario: Capturing CAN bus diagnostic logs during vehicle ignition-off periods using supercapacitor hold-up. IC Role / Device Role / Timing Role: High-reliability SRAM acting as circular buffer for event-triggered data capture; interfaced to automotive-grade microcontroller. Use Value: -40°C to +85°C rating ensures operation in under-hood environments; 55ns timing at 2.4V supports degraded-voltage logging. |
Use Scenario: Caching instrument firmware patches and calibration scripts in automated test systems requiring fast reconfiguration. IC Role / Device Role / Timing Role: High-speed parallel memory serving as execution buffer for FPGA-based controller, reducing flash read latency. Use Value: 44-pin TSOP(II) footprint allows drop-in replacement of legacy SRAMs; equal access/cycle times simplify timing closure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10ns faster access (35ns), but higher 2µA standby current and no sub-2V data retention. | Preferred where speed dominates over battery life; unsuitable for true low-VCC retention scenarios. | Select only if system operates continuously above 2.7V and requires tighter timing margins. |
| AS6C4008-55TIN | Same 45ns access and 44-pin TSOP(II), but 1.5µA standby current and no specified <1.5V retention. | Suitable for cost-sensitive industrial designs where backup duration is <1 year and VCC never drops below 2.0V. | Choose when footprint compatibility is critical but ultra-low standby is not required. |
Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the RMLV0816BGSB-4S2 uniquely balances 45ns performance with 0.45µA standby and 1.5V data retention - making it the only option among the three qualified for long-term battery-backed operation in harsh thermal environments.
Availability
RMLV0816BGSB-4S2 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device configuration storage, and automotive telematics log capture requiring stable component supply across extended product lifecycles.
Supply support for RMLV0816BGSB-4S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.
The RMLV0816BGSB-4S2 belongs to Renesas's Advanced LPSRAM family, engineered specifically for ultra-low-power, battery-backed memory applications where data integrity must persist through extended power-loss events.
FAQ
What is the minimum supply voltage required to retain data in RMLV0816BGSB-4S2?
The RMLV0816BGSB-4S2 guarantees data retention down to 1.5V when CS# or LB#/UB# are held high per the datasheet's Low VCC Data Retention Characteristics table. At this voltage, typical retention current is 0.45µA at +25°C. Operation below 1.5V risks data loss, and the device is not characterized for retention at lower voltages. This specification makes RMLV0816BGSB-4S2 suitable for coin-cell or supercapacitor backup schemes where voltage decay occurs gradually.
Does RMLV0816BGSB-4S2 support independent 8-bit reads and writes?
Yes, RMLV0816BGSB-4S2 supports independent 8-bit operations via dedicated LB# (lower byte, DQ0–DQ7) and UB# (upper byte, DQ8–DQ15) control signals. When LB# is low and UB# is high, only DQ0–DQ7 are active during read or write; the reverse enables DQ8–DQ15 only. This eliminates the need for external byte masking logic and reduces power per transaction. The RMLV0816BGSB-4S2 operation table on page 3 confirms these modes with distinct DQ behavior per byte enable state.
Is RMLV0816BGSB-4S2 pin-compatible with standard 44-pin TSOP(II) SRAMs like the IS61LV25616AL?
No, RMLV0816BGSB-4S2 is not pin-compatible with IS61LV25616AL despite sharing the 44-pin TSOP(II) package outline. Pin assignments differ: RMLV0816BGSB-4S2 places VCC at pin 11 and VSS at pin 12, while IS61LV25616AL uses pin 11 for A15 and pin 12 for A14. The RMLV0816BGSB-4S2 pin arrangement on page 2 shows unique placement of LB#/UB# and DQ groupings. Direct substitution would require PCB redesign. Always verify layout against the RMLV0816BGSB-4S2 pin diagram before integration.
What is the maximum operating current of RMLV0816BGSB-4S2 during active read cycles?
The RMLV0816BGSB-4S2 draws up to 25mA average operating current (ICC1) during continuous 55ns-cycle reads at 2.4–2.7V supply, and up to 30mA at 45ns cycles with 2.7–3.6V supply, per the DC Characteristics table on page 4. These values assume 100% duty cycle, CS# active, and no I/O loading. Real-world current will be lower with typical burst access patterns. The RMLV0816BGSB-4S2 also specifies 3mA ICC2 for standby-active transition conditions, critical for estimating peak supply demands in mixed-mode systems.
Can RMLV0816BGSB-4S2 be used with 2.5V logic systems?
Yes, RMLV0816BGSB-4S2 is fully specified for 2.4V–2.7V operation, including 2.5V nominal supply. At this voltage, access time is 55ns (max), VIH is 2.2V min, and VIL is 0.4V max - all compatible with standard 2.5V TTL/CMOS logic families. Input leakage remains ≤1µA, and output drive meets VOL ≤0.4V at 2mA. The RMLV0816BGSB-4S2 DC Operating Conditions table explicitly lists 2.4V–2.7V as a defined operating range, confirming robust functionality at 2.5V without derating or external level translation.
RMLV0816BGSB-4S2#AA0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.4V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
RMLV0816BGSB-4S2#AA0 FAQ
1.How can I place an order for RMLV0816BGSB-4S2#AA0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV0816BGSB-4S2#AA0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV0816BGSB-4S2#AA0 reliable?
The price and inventory of RMLV0816BGSB-4S2#AA0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0816BGSB-4S2#AA0 is usually 5 days.
3.What payment methods are accepted for RMLV0816BGSB-4S2#AA0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV0816BGSB-4S2#AA0 transactions.
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4.How is shipping managed for RMLV0816BGSB-4S2#AA0?
RMLV0816BGSB-4S2#AA0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMLV0816BGSB-4S2#AA0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMLV0816BGSB-4S2#AA0?
For technical support, including RMLV0816BGSB-4S2#AA0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0816BGSB-4S2#AA0 requirements.
6.How does Aetrix verify that RMLV0816BGSB-4S2#AA0 is sourced from the original manufacturer or authorized distributors?
All RMLV0816BGSB-4S2#AA0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0816BGSB-4S2#AA0 meets industry standards.
7.What is the process for return or replacement of RMLV0816BGSB-4S2#AA0?
All RMLV0816BGSB-4S2#AA0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0816BGSB-4S2#AA0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV0816BGSB-4S2#AA0 part is unused and in its original packaging.
Return procedure for RMLV0816BGSB-4S2#AA0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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