Renesas RMLV0816BGSB-4S2#HA0

Overview

RMLV0816BGSB-4S2 from Renesas Electronics is an 8Mb Advanced LPSRAM organized as 524,288-word × 16-bit, operating on a single 2.4V–3.6V supply, with 45ns access time at 2.7–3.6V and 0.45µA typical standby current at +25°C, designed for low-power battery-backed memory applications in industrial control and portable instrumentation.

For engineers reviewing the RMLV0816BGSB-4S2 datasheet, RMLV0816BGSB-4S2 pinout, RMLV0816BGSB-4S2 application, or RMLV0816BGSB-4S2 equivalent, this page delivers verified timing specs, TSOP(II) package mapping, byte-select operation details, and direct TTL-compatible interface behavior critical for SRAM integration in power-constrained embedded systems.

Technical Context

The RMLV0816BGSB-4S2 implements a fully static memory architecture with independent upper/lower byte enable (UB#/LB#), asynchronous read/write control via CS#/OE#/WE#, and common I/O pins supporting true three-state output. Its address space spans A0–A18 (19 bits), enabling full 512k-word decoding without external logic.

All inputs and outputs are directly TTL-compatible across the full 2.4V–3.6V VCC range, with VIH thresholds of 2.2V (2.4–2.7V) or 2.4V (2.7–3.6V), and VOL ≤ 0.4V at IOL = 2mA. Standby mode is activated by asserting CS# high or simultaneously holding LB# and UB# high, achieving sub-1µA retention current at +25°C.

Key Specifications

Pinout & Package

44-pin plastic TSOP(II) package with 0.8mm lead pitch, JEDEC MO-141AC compliant, top-side marking includes date code and part number. Pin 1 identified by corner notch or dot.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with CY62167EV30LL-45ZSXIT and IS62WV51216BLL-45NLI, the RMLV0816BGSB-4S2 uniquely delivers 0.45µA standby at +25°C with 2.4V operational margin and 44-pin TSOP(II) compactness-making it optimal for long-life battery-backed systems where voltage headroom and board area are constrained.

Availability

RMLV0816BGSB-4S2 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical device memory, and automotive telematics log storage requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial-temperature performance.

Supply support for RMLV0816BGSB-4S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The RMLV0816BGSB-4S2 belongs to Renesas's Advanced LPSRAM product line, engineered specifically for ultra-low-power, battery-backed memory applications demanding high reliability and extended data retention at minimal supply voltage.

FAQ

What is the minimum supply voltage required for data retention in the RMLV0816BGSB-4S2?

The RMLV0816BGSB-4S2 maintains data integrity down to 1.5V VCC in retention mode, activated either by holding CS# high or simultaneously asserting LB# and UB# high. This specification is validated per the Low VCC Data Retention Characteristics table on page 12 of the R10DS0231EJ0201 datasheet, with ICCDR measured at 0.45µA typical at +25°C and 3.0V. The RMLV0816BGSB-4S2 thus supports graceful operation during brownout conditions where main supply dips below nominal levels.

Does the RMLV0816BGSB-4S2 support true 16-bit parallel access without external byte masking?

Yes, the RMLV0816BGSB-4S2 natively supports full 16-bit parallel access using DQ0–DQ15, with independent LB# and UB# controls enabling selective 8-bit writes without external logic. The operation table (page 3) confirms that asserting LB# low while keeping UB# high performs lower-byte writes, and vice versa. This eliminates the need for external AND gates or bus transceivers typically required in narrower SRAM interfaces, simplifying PCB routing and reducing component count for the RMLV0816BGSB-4S2.

What is the maximum operating frequency implied by the RMLV0816BGSB-4S2's 45ns access time?

The 45ns access time (tAA) of the RMLV0816BGSB-4S2 defines the minimum time between address valid and valid data output under 2.7–3.6V VCC conditions. This corresponds to a theoretical maximum bus clock rate of ~22.2 MHz for asynchronous read cycles. However, total cycle time (tRC = 45ns) governs sustained throughput, meaning the RMLV0816BGSB-4S2 supports up to 22.2 million read/write operations per second in ideal conditions, assuming zero overhead from control signal setup/hold. Real-world performance depends on host controller timing margins and PCB trace lengths.

Is the RMLV0816BGSB-4S2 pin-compatible with earlier Renesas LPSRAM devices like the R1LV0816BGSB series?

No, the RMLV0816BGSB-4S2 is not pin-compatible with the legacy R1LV0816BGSB series. While both are 44-pin TSOP(II) SRAMs with identical pin count and mechanical outline, the RMLV0816BGSB-4S2 introduces updated DC and AC characteristics-including tighter standby current (0.45µA vs. older 1µA spec) and revised VIH/VIL thresholds-and requires verification against the R10DS0231EJ0201 datasheet for signal timing alignment. Direct replacement is not assured without board-level validation of voltage thresholds and timing margins for the RMLV0816BGSB-4S2.

How does the RMLV0816BGSB-4S2 handle simultaneous assertion of LB# and UB# during write operations?

When both LB# and UB# are asserted low simultaneously with CS# and WE#, the RMLV0816BGSB-4S2 performs a full 16-bit write across DQ0–DQ15, as defined in the Operation Table (page 3). This is the default write mode and requires no special sequencing. The device does not enter an undefined or conflict state-instead, it treats the combined assertion as a request to update the entire word. This behavior ensures deterministic operation for standard microprocessor bus interfaces where byte-select lines are driven in concert with write strobes for the RMLV0816BGSB-4S2.