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Renesas RMLV0816BGSD-4S2#HA1
- Part No.:
- RMLV0816BGSD-4S2#HA1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 52-TFSOP (0.350", 8.89mm Width)
- Datasheet:
-
RMLV0816BGSD-4S2#HA1.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 52TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,732
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Product details
Overview
RMLV0816BGSD-4S2 from Renesas Electronics is an 8Mb Advanced LPSRAM organized as 524,288-word × 16-bit or 1,048,576-word × 8-bit, operating from a single 2.4V–3.6V supply, with 45ns access time at 2.7V–3.6V and −40°C to +85°C industrial temperature range, housed in a 52-pin µTSOP (II) package - ideal for battery-backed memory subsystems in portable instrumentation and low-power embedded controllers.
For engineers reviewing the RMLV0816BGSD-4S2 datasheet, RMLV0816BGSD-4S2 pinout, RMLV0816BGSD-4S2 application, or RMLV0816BGSD-4S2 equivalent, key selection criteria include byte/word mode flexibility, sub-1µA standby current at +25°C, TTL-compatible I/O, and dual chip-select architecture enabling multi-bank memory expansion without external logic.
Technical Context
This static RAM implements a dual-mode address/data architecture supporting both word (A0–A18) and byte (A−1–A18) addressing via BYTE# control, with independent LB#/UB# enables for 8-bit sub-access within 16-bit data width. Its low-power design integrates advanced LPSRAM cell technology enabling data retention down to 1.5V VCC while maintaining full functionality across the entire industrial temperature range.
The device uses three-state bidirectional DQ0–DQ15 I/O with simultaneous CS1#, CS2, OE#, and WE# control logic validated per AC timing tables for read/write cycle integrity. Standby entry is achieved through any of three independent paths: CS2 low, CS1# high with CS2 high, or LB#/UB# high with CS1# low and CS2 high - ensuring robust power management in complex system-on-module designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 8 Mbit (524,288 × 16 or 1,048,576 × 8), enabling compact code/data storage in space-constrained MCU co-processor systems |
| Supply voltage | 2.4V–3.6V single rail - compatible with 3.3V logic domains and supports brown-out tolerant operation during battery voltage sag |
| Access time | 45 ns max at 2.7V–3.6V; 55 ns max at 2.4V–2.7V - ensures deterministic timing margins for 22 MHz synchronous bus interfaces |
| Standby current | 0.45 µA typ. at +25°C - extends battery life to years in always-on backup memory applications |
| Data retention VCC | 1.5V min - maintains SRAM contents during deep sleep or main power loss without external capacitor hold-up |
| Operating temperature | −40°C to +85°C - qualified for industrial automation, automotive body control modules, and outdoor telemetry nodes |
| I/O compatibility | TTL-level inputs and outputs - eliminates level-shifter requirements when interfacing with legacy microcontrollers and FPGAs |
Pinout & Package
Package: 52-pin plastic µTSOP (II), 10.79 mm × 10.49 mm footprint, JEDEC MO-187AC compliant, suitable for fine-pitch automated assembly and thermal cycling reliability in compact PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power supply | Primary 2.4V–3.6V core and I/O rail; decoupling required within 5 mm for stable 45 ns timing |
| VSS | Ground | Dedicated ground reference for all internal logic and I/O buffers; must be connected to low-impedance plane |
| A0–A18 | Address input (word mode) | 19-bit word address bus; A0–A18 used in 524k×16 configuration; A−1 appears on DQ15 pin in byte mode |
| DQ0–DQ15 | Data I/O | Bidirectional 16-bit data bus with three-state control; shares pins between input and output; requires external bus contention management |
| CS1#, CS2 | Chip select | Two independent enables: CS1# active-low primary select; CS2 active-high secondary select - enables hierarchical bank decoding |
| OE#, WE# | Output/write enable | OE# controls DQ output drivers only; WE# initiates write cycles; both are asynchronous and edge-independent |
| LB#, UB# | Byte select | Active-low lower/upper byte enables; allow 8-bit writes/reads within 16-bit bus without masking logic |
| BYTE# | Mode control | Active-high selects byte addressing (A−1–A18) vs. word addressing (A0–A18); determines DQ15 function and address mapping |
Key Features
| Feature | Design Value |
|---|---|
| Low-voltage data retention | Operates down to 1.5V VCC with 0.45 µA retention current - eliminates need for external backup batteries in many applications |
| Dual addressing modes | Hardware-selectable word (524k×16) or byte (1M×8) organization via BYTE# pin - simplifies migration between 8-bit and 16-bit host processors |
| Multi-path standby entry | Three independent standby activation methods (CS2 low / CS1# high+CS2 high / LB#/UB# high+CS1# low+CS2 high) - enhances system-level power sequencing flexibility |
| Simultaneous chip select architecture | CS1# and CS2 operate orthogonally: CS1# gates memory array access, CS2 gates internal buffer enable - enables glitch-free partial power-down |
| TTL-compatible I/O | All inputs accept 0.4V/2.0V (2.4V–2.7V) or 0.6V/2.2V (2.7V–3.6V) thresholds; outputs drive ±1mA - interoperable with 3.3V and 5V-tolerant logic families |
Applications
| Industrial Data Logger | Medical Portable Monitor |
|---|---|
Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂, temperature) with periodic flash offload and real-time display buffering. IC Role / Device Role / Timing Role: Primary volatile buffer for waveform capture and UI refresh; operates in word mode for fast CPU reads and byte mode for peripheral register updates. Use Value: 0.45 µA standby current extends battery runtime beyond 72 hours between charges; 45 ns access enables 22 MHz DMA transfers without wait states. | Use Scenario: Battery-powered handheld diagnostic tool requiring persistent parameter storage and rapid boot-time configuration recall. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding calibration coefficients and user preferences; retains data during 1.8V brown-out events. Use Value: 1.5V data retention threshold allows uninterrupted operation during Li-ion discharge below 2.5V; µTSOP package fits within 12 mm × 12 mm board area budget. |
| Automotive Body Control Module | Smart Energy Meter |
Use Scenario: Storing door lock status, window position, mirror settings, and fault logs across ignition cycles in 12V vehicle electrical systems. IC Role / Device Role / Timing Role: Battery-backed SRAM holding EEPROM-like configuration data; accessed via CAN-linked microcontroller over parallel bus. Use Value: −40°C to +85°C rating ensures reliability under hood temperature extremes; dual CS architecture isolates memory during CAN transceiver reset sequences. | Use Scenario: Tamper-resistant metering unit storing tariff schedules, consumption history, and cryptographic keys with secure power-fail write protection. IC Role / Device Role / Timing Role: Secure scratchpad memory for AES encryption operations and real-time billing calculations; operates in byte mode for efficient 8-bit crypto engine interfacing. Use Value: Sub-1 µA standby draw minimizes supercapacitor leakage impact; LB#/UB# enables atomic 8-bit writes to prevent key corruption during mains dropout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C8016-45TIN | 45 ns access at 2.7V–3.6V, but 2.5V–3.6V supply range and 1 µA standby current at +25°C - higher minimum VCC and 2.2× higher standby draw | Less suitable for ultra-low-power battery backup; requires tighter VCC regulation | Select only if AS6C8016-45TIN's 44-pin TSOP-I footprint matches existing layout and 1 µA standby is acceptable |
| IS61LV51216AL-10TLI | 10 ns access, 3.3V-only (3.0V–3.6V), 2 µA standby at +25°C, 48-pin TSOP-I - faster but significantly higher power and narrower voltage tolerance | Better for high-speed caching; unsuitable for long-term battery retention | Choose only when system demands sub-10 ns timing and can support higher quiescent current and strict 3.3V regulation |
Compared with AS6C8016-45TIN and IS61LV51216AL-10TLI, the RMLV0816BGSD-4S2 delivers superior energy efficiency for battery-critical applications due to its 0.45 µA standby current and 1.5V data retention, while maintaining industrial temperature compliance and flexible addressing - making it optimal for extended-life portable and automotive systems where power budget dominates speed requirements.
Availability
RMLV0816BGSD-4S2 is available at Aetrix Electronics and suitable for industrial data loggers, portable medical monitors, and automotive body control modules requiring stable component supply, long-lifecycle assurance, and guaranteed traceability for ISO 13485 and IATF 16949 programs.
Supply support for RMLV0816BGSD-4S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog and power devices, and memory solutions for automotive, industrial, and IoT markets.
The RMLV0816BGSD-4S2 belongs to Renesas' Advanced LPSRAM family, engineered specifically for ultra-low-power, battery-backed memory applications demanding industrial temperature resilience and flexible data-width interfacing without external glue logic.
FAQ
What is the minimum supply voltage required to retain data in RMLV0816BGSD-4S2?
The RMLV0816BGSD-4S2 guarantees data retention down to 1.5V VCC under specified conditions (CS2 ≤ 0.2V or LB#/UB# ≥ VCC−0.2V with CS1# low and CS2 high). At this voltage, typical retention current is 0.45 µA at +25°C. Operation below 1.5V risks data loss; full functionality resumes immediately upon VCC restoration above 2.4V.
How does BYTE# pin configuration affect address mapping in RMLV0816BGSD-4S2?
When BYTE# is high, RMLV0816BGSD-4S2 operates in word mode: A0–A18 define 524,288 addresses for 16-bit words. When BYTE# is low, it switches to byte mode: A−1–A18 define 1,048,576 addresses for 8-bit bytes, with A−1 appearing on DQ15. This hardware-selectable mode eliminates software remapping overhead and supports mixed 8/16-bit host architectures.
Can RMLV0816BGSD-4S2 be used with a 2.5V microcontroller interface?
Yes - the RMLV0816BGSD-4S2 accepts VIH = 2.0V (min) and VIL = 0.4V (max) at VCC = 2.4V–2.7V, making it fully compatible with 2.5V logic families. Input thresholds scale with VCC, and outputs drive VOH ≥ 2.4V at IOH = −1mA, ensuring noise margin against 2.5V receivers. No level translation is needed.
What are the three independent standby entry conditions for RMLV0816BGSD-4S2?
The RMLV0816BGSD-4S2 enters standby via any one of: (1) CS2 ≤ 0.2V, (2) CS1# ≥ VCC−0.2V with CS2 ≥ VCC−0.2V, or (3) LB# = UB# ≥ VCC−0.2V with CS1# ≤ 0.2V and CS2 ≥ VCC−0.2V. All three paths yield identical 0.45 µA standby current at +25°C and support seamless transition to data retention mode.
Is RMLV0816BGSD-4S2 pin-compatible with standard 52-pin µTSOP (II) packages from other manufacturers?
Yes - the RMLV0816BGSD-4S2 adheres to JEDEC MO-187AC mechanical specifications for 52-pin µTSOP (II), including 0.5 mm pitch, 10.79 mm × 10.49 mm body dimensions, and standardized pin 1 marking. However, signal assignment (e.g., BYTE#, dual CS architecture) is Renesas-specific; direct replacement requires functional verification of control logic and timing.
RMLV0816BGSD-4S2#HA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 52-TFSOP (0.350", 8.89mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8, 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.4V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 52-TSOP II
RMLV0816BGSD-4S2#HA1 FAQ
1.How can I place an order for RMLV0816BGSD-4S2#HA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV0816BGSD-4S2#HA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV0816BGSD-4S2#HA1 reliable?
The price and inventory of RMLV0816BGSD-4S2#HA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV0816BGSD-4S2#HA1 is usually 5 days.
3.What payment methods are accepted for RMLV0816BGSD-4S2#HA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV0816BGSD-4S2#HA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMLV0816BGSD-4S2#HA1?
RMLV0816BGSD-4S2#HA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMLV0816BGSD-4S2#HA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMLV0816BGSD-4S2#HA1?
For technical support, including RMLV0816BGSD-4S2#HA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV0816BGSD-4S2#HA1 requirements.
6.How does Aetrix verify that RMLV0816BGSD-4S2#HA1 is sourced from the original manufacturer or authorized distributors?
All RMLV0816BGSD-4S2#HA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV0816BGSD-4S2#HA1 meets industry standards.
7.What is the process for return or replacement of RMLV0816BGSD-4S2#HA1?
All RMLV0816BGSD-4S2#HA1 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV0816BGSD-4S2#HA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV0816BGSD-4S2#HA1 part is unused and in its original packaging.
Return procedure for RMLV0816BGSD-4S2#HA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RMLV0816BGSD-4S2#HA1 Tags
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M24C02-WMN6TP
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Microchip Technology
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