Renesas RMLV1616AGBG-4U2#AC0

Overview

RMLV1616AGBG-4U2#AC0 from Renesas Electronics is a 16-Mbit low-power asynchronous SRAM organized as 1,048,576-word × 16-bit, featuring on-chip ECC for enhanced soft error immunity (≤0.04 FIT/Mb), 45 ns access time, and ultra-low standby current (0.4 µA typ. at 25°C). It operates from a single 2.7–3.6 V supply and supports battery backup systems in industrial and embedded applications requiring data retention during power loss.

For engineers reviewing the RMLV1616AGBG-4U2#AC0 datasheet, RMLV1616AGBG-4U2#AC0 pinout, RMLV1616AGBG-4U2#AC0 application, or RMLV1616AGBG-4U2#AC0 equivalent, this device delivers verified word-mode operation, FBGA48 package compatibility, low-voltage data retention down to 1.5 V, and dual chip select architecture for seamless memory expansion in space-constrained designs.

Technical Context

The RMLV1616AGBG-4U2#AC0 implements Renesas's Advanced LPSRAM technology with integrated ECC logic that detects and corrects single-bit errors without external circuitry, enabling reliable operation in radiation-prone environments. Its 48-ball FBGA package (0.75 mm pitch) fixes BYTE# = high, enforcing strict 1M × 16-bit word-mode addressing-no dynamic byte/word mode switching.

It uses dual chip select (CS1#, CS2) with independent enable control for hierarchical memory mapping and supports three-state outputs with TTL-compatible I/O levels (VIH ≥ 2.2 V, VIL ≤ 0.6 V). Standby entry is triggered by asserting CS2 low or disabling both CS1# and CS2 per JEDEC JESD89A-compliant retention conditions.

Key Specifications

Pinout & Package

48-ball fine-pitch ball grid array (FBGA) package with 0.75 mm pitch, JEITA code P-TFBGA48-7.5x8.5-0.75. Pinout conforms to word-mode operation only (BYTE# internally tied high); no byte-mode configuration support.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with IS61WV102416BLL-10MLI and AS6C1008-55PCN, the RMLV1616AGBG-4U2#AC0 uniquely combines on-chip ECC, 45 ns speed, 0.4 µA standby, and 1.5 V data retention in a single 48-ball FBGA-enabling smaller footprint, longer battery life, and higher functional safety compliance without redesign.

Availability

RMLV1616AGBG-4U2#AC0 is available at Aetrix Electronics and suitable for industrial PLCs, medical event loggers, railway signaling controllers, avionics health monitors, and battery-backed embedded systems requiring stable component supply across extended temperature and lifecycle demands.

Supply support for RMLV1616AGBG-4U2#AC0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The RMLV1616A-U Series was designed specifically for battery-backed, high-reliability embedded systems where data integrity, ultra-low power, and extended temperature operation are mandatory-not general-purpose memory replacement.

FAQ

What is the maximum operating temperature range for the RMLV1616AGBG-4U2#AC0?

The RMLV1616AGBG-4U2#AC0 is rated for continuous operation from –40°C to +85°C ambient temperature. This range is validated per its Absolute Maximum Ratings and DC Operating Conditions specifications, and applies to all electrical parameters including access time, standby current, and data retention behavior. The device maintains 45 ns access time and ≤0.04 FIT/Mb soft error immunity across this full industrial temperature span.

Does the RMLV1616AGBG-4U2#AC0 support byte-mode (2M × 8-bit) operation?

No, the RMLV1616AGBG-4U2#AC0 does not support byte-mode operation. As confirmed in the datasheet's "Part Name Information" and "Pin Description" sections, the 48-ball FBGA variant (including RMLV1616AGBG-4U2#AC0) fixes BYTE# = high internally, enabling word-mode only (1M × 16-bit). Byte-mode is exclusive to the TSOP (I) variants (e.g., RMLV1616AGSA-4U2) which expose the BYTE# pin.

What is the minimum V_CC required to retain data in the RMLV1616AGBG-4U2#AC0 during battery backup?

The RMLV1616AGBG-4U2#AC0 retains stored data down to 1.5 V V_CC, as specified in the "Low VCC Data Retention Characteristics" table. This value is measured under defined retention conditions (e.g., CS2 ≤ 0.2 V or LB#/UB# ≥ V_CC–0.2 V) and enables robust operation during brown-out or backup power transitions without external voltage supervision.

How does the on-chip ECC in the RMLV1616AGBG-4U2#AC0 function during normal read/write cycles?

The on-chip ECC in the RMLV1616AGBG-4U2#AC0 operates transparently: it automatically calculates and stores Hamming-code parity bits alongside user data during writes, and validates/corrects single-bit errors on every read without CPU intervention or additional timing overhead. No external logic, firmware routines, or memory controller modifications are required-the RMLV1616AGBG-4U2#AC0 presents a standard SRAM interface while delivering FIT-rated reliability.

Is the RMLV1616AGBG-4U2#AC0 RoHS compliant and lead-free?

Yes, the RMLV1616AGBG-4U2#AC0 is Pb-free and RoHS applicable, as explicitly stated in the "Features" section of the datasheet. Its 48-ball FBGA package uses lead-free solder finish and complies with EU RoHS Directive 2011/65/EU and related amendments, making it suitable for environmentally regulated industrial and medical product deployments.