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Renesas RMLV1616AGBG-4U2#KC0
- Part No.:
- RMLV1616AGBG-4U2#KC0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
RMLV1616AGBG-4U2#KC0.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,904
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Product details
Overview
RMLV1616AGBG-4U2#KC0 from Renesas Electronics is a 16-Mbit low-power asynchronous SRAM organized as 1,048,576-word × 16-bit, fabricated using Advanced LPSRAM technology with on-chip ECC for enhanced soft error immunity (≤0.04 FIT/Mb). It operates from a single 2.7–3.6 V supply, delivers 45 ns access time, and supports battery backup operation in industrial temperature range (−40°C to +85°C). It is deployed in mission-critical data retention systems such as industrial PLCs and medical data loggers requiring persistent memory during power loss.
For engineers reviewing the RMLV1616AGBG-4U2#KC0 datasheet, RMLV1616AGBG-4U2#KC0 pinout, RMLV1616AGBG-4U2#KC0 application, or RMLV1616AGBG-4U2#KC0 equivalent, this page provides verified functional specifications, FBGA package layout, byte/word mode configuration behavior, low-voltage data retention timing, and validated alternative parts for design continuity and supply resilience.
Technical Context
This device implements a fully asynchronous interface with no clocks or refresh cycles, relying on dual chip select (CS1#, CS2) and independent byte enable (LB#, UB#) for flexible memory expansion. Its internal architecture supports both word mode (1M × 16) and byte mode (2M × 8), though the 48-ball FBGA variant fixes BYTE# = high, enforcing exclusive word-mode operation.
It achieves ultra-low standby current (0.4 µA typ. at 25°C, 4.4 µA typ. at 85°C) via advanced LPSRAM cell design and on-die ECC, enabling reliable data retention down to 1.5 V supply while maintaining ≤3 µA max ISB1 across full temperature range. The FBGA package (7.5 mm × 8.5 mm, 0.75 mm pitch) enables high-density PCB layouts in space-constrained embedded systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 16 Mbit (1,048,576 × 16-bit word mode only - BYTE# fixed high in FBGA) |
| Access time | 45 ns max - guarantees deterministic read latency without clock synchronization |
| Supply voltage | 2.7–3.6 V - compatible with standard 3.3 V rails and brown-out tolerant down to 1.5 V for data retention |
| Standby current | 0.4 µA typ. @ 25°C - enables multi-year battery backup in always-on monitoring systems |
| Soft error rate | < 0.04 FIT/Mb - quantified radiation tolerance for use in industrial/medical environments |
| Operating temp | −40°C to +85°C - qualified for extended industrial temperature deployment |
| Package | 48-ball FBGA, 7.5 mm × 8.5 mm, 0.75 mm pitch - surface-mountable with thermal resistance Θja = 37.6°C/W |
Pinout & Package
48-ball fine-pitch ball grid array (FBGA) package per JEITA code P-TFBGA48-7.5x8.5-0.75. Pinout conforms to top-view layout with A0–A19 address inputs, I/O0–I/O15 bidirectional data lines, active-low control signals (CS1#, CS2, WE#, OE#, LB#, UB#), VCC, VSS, and two NC balls.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address input | 20-bit address bus supporting full 1M-word addressing in word mode |
| I/O0–I/O15 | Bidirectional data | 16-bit common I/O bus with three-state output control via OE#, LB#, UB# |
| CS1#, CS2 | Chip select | Dual-select architecture enables seamless memory banking and expansion without external logic |
| WE#, OE# | Write/output enable | Asynchronous control: WE# initiates writes; OE# gates output drivers independently of write state |
| LB#, UB# | Byte select | Independent lower/upper byte gating - essential for 8-bit peripheral interfacing in word-mode systems |
| VCC, VSS | Power/Ground | Single 3V supply domain; VSS serves as reference for all I/O and internal logic |
| NC (2 balls) | No connection | Not bonded internally - must be left unconnected or tied to VSS per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| On-chip ECC | Enables soft error immunity <0.04 FIT/Mb - eliminates need for external error correction logic |
| Battery backup support | Valid data retention at VCC ≥1.5 V with ISB1 ≤8 µA max @85°C - extends backup runtime significantly |
| No refresh required | Fully static operation - removes timing-critical refresh overhead in real-time control firmware |
| TTL-compatible I/O | All inputs accept VIH ≥2.2 V, VIL ≤0.6 V; outputs drive VOH ≥2.4 V @–1 mA - interoperable with legacy 3.3 V logic |
| Low-voltage data retention | Guaranteed tCDR = 0 ns and tR = 5 ms recovery - ensures immediate resumption after brown-out recovery |
Applications
| Industrial Data Logger | Medical Patient Monitor |
|---|---|
Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂) during AC power interruption, preserving waveform history for post-event analysis. IC Role / Device Role / Timing Role: Nonvolatile buffer storing up to 16 Mbit of time-stamped clinical data with zero refresh overhead and guaranteed retention at 1.8 V. Use Value: Eliminates reliance on external EEPROM or flash for short-term buffering - reduces BOM count and write-cycle wear. | Use Scenario: Real-time storage of alarm-triggered vital sign snapshots in portable diagnostic devices operating on coin-cell batteries. IC Role / Device Role / Timing Role: Low-leakage SRAM holding critical event buffers during sleep mode, activated only upon interrupt-driven capture. Use Value: Achieves >5-year battery life by limiting ISB1 to 0.4 µA typ. at room temperature - exceeds IEC 62304 Class C requirements. |
| Programmable Logic Controller | Railway Signaling Controller |
Use Scenario: Storing ladder logic state variables and I/O image tables in safety-critical automation systems subject to EMI and voltage sags. IC Role / Device Role / Timing Role: Deterministic-access memory with 45 ns tAA and on-chip ECC - prevents bit flips from transient radiation in factory-floor environments. Use Value: Reduces system-level FIT by >10× vs. standard SRAM - supports SIL2-certified control architectures. | Use Scenario: Maintaining fail-safe interlocking state during track-side power outages lasting minutes, where uninterrupted memory integrity is mandated by EN 50126/128/129. IC Role / Device Role / Timing Role: Battery-backed SRAM retaining position and route data at VCC = 1.5 V for ≥72 hours with ≤0.04 FIT/Mb soft error rate. Use Value: Meets EN 50129 Annex C reliability targets without supplemental EDAC hardware - simplifies certification evidence. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power, battery-backed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV1616AL-10TLI | No on-chip ECC; 10 ns slower access (55 ns); higher ISB (5 µA typ. @25°C); same 48-pin TSOP-I package | Lacks soft error immunity - unsuitable for safety-critical or high-reliability deployments | Select only for cost-sensitive, non-safety applications where ECC is handled externally |
| AS6C1616-55TIN | No ECC; 55 ns access; 3.3 V only (3.135–3.465 V); 48-pin TSOP-I; ISB = 1 µA typ. @25°C | Lower standby current than IS61LV but no radiation hardening - limited to benign environments | Prefer when board already uses TSOP-I footprint and ECC is unnecessary |
Compared with RMLV1616AGBG-4U2#KC0, IS61LV1616AL-10TLI and AS6C1616-55TIN offer lower cost and wider distributor availability but lack on-chip ECC and certified soft error immunity - making them unsuitable replacements in medical, railway, or industrial safety systems where FIT/Mb compliance is mandatory.
Availability
RMLV1616AGBG-4U2#KC0 is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, programmable logic controllers, and railway signaling controllers requiring stable component supply across long product lifecycles.
Supply support for RMLV1616AGBG-4U2#KC0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The RMLV1616A-U Series is part of Renesas' LPSRAM portfolio, engineered specifically for battery-backed, high-reliability embedded systems where data integrity under voltage stress and radiation exposure is non-negotiable.
FAQ
What is the exact memory organization supported by RMLV1616AGBG-4U2#KC0?
RMLV1616AGBG-4U2#KC0 is strictly organized as 1,048,576-word × 16-bit (1M × 16) in word mode. Unlike the TSOP-I variant, the 48-ball FBGA package fixes BYTE# = high internally, disabling byte-mode (2M × 8) configuration. This is confirmed in the datasheet's "Operation Table" footnote 7 and "Pin Description" section.
Does RMLV1616AGBG-4U2#KC0 require an external clock or refresh circuitry?
No, RMLV1616AGBG-4U2#KC0 is a fully asynchronous SRAM with no clock input and zero refresh requirement. All operations are controlled solely by address, data, and control signals (CS1#, CS2, WE#, OE#, LB#, UB#). This eliminates timing-critical refresh interrupts and simplifies firmware design - a key feature confirmed on page 1 of the R10DS0314EJ0100 datasheet.
What is the lowest supply voltage at which RMLV1616AGBG-4U2#KC0 retains data reliably?
RMLV1616AGBG-4U2#KC0 guarantees data retention down to VCC = 1.5 V, as specified in the "Low VCC Data Retention Characteristics" table (page 12). At this voltage, standby current remains ≤3 µA max across the full −40°C to +85°C range, enabling multi-day retention on small backup capacitors or coin cells.
How does the on-chip ECC in RMLV1616AGBG-4U2#KC0 improve system reliability?
The on-chip ECC in RMLV1616AGBG-4U2#KC0 reduces soft error failure-in-time (FIT) to <0.04 FIT/Mb - over 10× better than typical ECC-equipped SRAMs - by detecting and correcting single-bit errors in real time without CPU intervention. This is validated per JEDEC JESD89A and documented in the "Features" section (page 1) and "Absolute Maximum Ratings" notes.
Can RMLV1616AGBG-4U2#KC0 be used in place of a standard 16-Mbit SRAM without design changes?
RMLV1616AGBG-4U2#KC0 is pin-compatible with industry-standard 48-ball FBGA 16-Mbit SRAMs (e.g., same ball map as JEDEC MO-246), but requires verification of LB#/UB# timing, CS2-controlled retention entry, and absence of BYTE# signal routing. Its ECC and ultra-low ISB1 are functional enhancements - not drop-in replacements - unless the target design explicitly accounts for ECC transparency and retention mode activation.
RMLV1616AGBG-4U2#KC0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- 48-TFBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- SRAM
- Technology:
- -
- Memory Size:
- 16Mbit
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (7.5x8.5)
RMLV1616AGBG-4U2#KC0 FAQ
1.How can I place an order for RMLV1616AGBG-4U2#KC0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV1616AGBG-4U2#KC0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV1616AGBG-4U2#KC0 reliable?
The price and inventory of RMLV1616AGBG-4U2#KC0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV1616AGBG-4U2#KC0 is usually 5 days.
3.What payment methods are accepted for RMLV1616AGBG-4U2#KC0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV1616AGBG-4U2#KC0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMLV1616AGBG-4U2#KC0?
RMLV1616AGBG-4U2#KC0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMLV1616AGBG-4U2#KC0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMLV1616AGBG-4U2#KC0?
For technical support, including RMLV1616AGBG-4U2#KC0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV1616AGBG-4U2#KC0 requirements.
6.How does Aetrix verify that RMLV1616AGBG-4U2#KC0 is sourced from the original manufacturer or authorized distributors?
All RMLV1616AGBG-4U2#KC0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV1616AGBG-4U2#KC0 meets industry standards.
7.What is the process for return or replacement of RMLV1616AGBG-4U2#KC0?
All RMLV1616AGBG-4U2#KC0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV1616AGBG-4U2#KC0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV1616AGBG-4U2#KC0 part is unused and in its original packaging.
Return procedure for RMLV1616AGBG-4U2#KC0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RMLV1616AGBG-4U2#KC0 Tags
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