Renesas RMLV1616AGBG-5S2#AC0

Overview

RMLV1616AGBG-5S2#AC0 from Renesas Electronics is a 16Mb advanced low-power static RAM organized as 1,048,576 words × 16 bits (or 2,097,152 words × 8 bits), operating from a single 2.7–3.6V supply with 55ns max access time and 0.5µA typical standby current at +25°C. It supports battery backup operation and is designed for embedded systems requiring non-volatile data retention during power loss.

For engineers reviewing the RMLV1616AGBG-5S2#AC0 datasheet, RMLV1616AGBG-5S2#AC0 pinout, RMLV1616AGBG-5S2#AC0 application, or RMLV1616AGBG-5S2#AC0 equivalent, key selection criteria include FBGA-48 package compatibility, byte/word mode flexibility via LB#/UB#, TTL-level interface compatibility, and low-voltage data retention down to 1.5V.

Technical Context

The RMLV1616AGBG-5S2#AC0 implements dual chip select (CS1#, CS2) with independent control of address buffers, I/O drivers, and data selectors to enable precise power gating and multi-bank memory management. Its byte-select architecture (LB#/UB#) allows independent 8-bit writes without affecting adjacent bytes, while the absence of BYTE# pin in FBGA packaging fixes operation in word mode (BYTE#=H internally).

It features three-state outputs with fast output enable/disable timing (tOE = 22ns max, tOHZ = 18ns max), low-noise switching design verified across -40°C to +85°C, and robust data retention under VCC as low as 1.5V when CS2 ≤ 0.2V or LB#/UB# ≥ VCC−0.2V - critical for real-time clock backup and fail-safe logging.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA) with 0.75 mm pitch, footprint 8.0 mm × 9.0 mm per Renesas R10DS0258EJ0101 Rev.1.01.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the RMLV1616AGBG-5S2#AC0 uniquely combines FBGA-48 compactness, 1.5V data retention, and 0.5µA standby - making it optimal for space- and battery-constrained industrial edge nodes where reliability trumps raw speed.

Availability

RMLV1616AGBG-5S2#AC0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device event logging, and automotive telematics ECU applications requiring stable component supply across extended product lifecycles.

Supply support for RMLV1616AGBG-5S2#AC0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The RMLV1616A Series targets low-power, high-reliability embedded systems requiring battery-backed SRAM with industrial temperature tolerance and compact packaging - especially where FBGA integration and ultra-low standby current are critical.

FAQ

What is the package type and ball pitch of the RMLV1616AGBG-5S2#AC0?

The RMLV1616AGBG-5S2#AC0 uses a 48-ball fine-pitch ball grid array (FBGA) package with 0.75 mm ball pitch and an 8.0 mm × 9.0 mm body size, as specified in Renesas document R10DS0258EJ0101 Rev.1.01. This package provides superior thermal performance and board density compared to TSOP alternatives, and is optimized for automated SMT assembly in high-reliability industrial applications. The RMLV1616AGBG-5S2#AC0 does not include a BYTE# pin, fixing operation in word mode.

Does the RMLV1616AGBG-5S2#AC0 support byte-wide memory access?

Yes, the RMLV1616AGBG-5S2#AC0 supports byte-wide access through dedicated LB# (lower byte) and UB# (upper byte) control signals, enabling independent 8-bit writes to DQ0–DQ7 or DQ8–DQ15 without affecting the other byte lane. Although the FBGA variant omits the BYTE# pin (fixing word-mode behavior), LB# and UB# remain fully functional per the operation table in the RMLV1616A datasheet. This capability is essential for efficient data handling in mixed-width microcontroller interfaces.

What is the minimum supply voltage for data retention on the RMLV1616AGBG-5S2#AC0?

The RMLV1616AGBG-5S2#AC0 guarantees data retention down to 1.5 V VCC when entering retention mode via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V, or LB#/UB# ≥ VCC−0.2V - as confirmed in the Low VCC Data Retention Characteristics table (Page 13) of R10DS0258EJ0101 Rev.1.01. At this voltage, typical retention current is 0.5 µA at +25°C, scaling to 5 µA at +40°C. This enables reliable operation with primary lithium or supercapacitor backup sources.

Is the RMLV1616AGBG-5S2#AC0 compatible with standard TTL logic levels?

Yes, the RMLV1616AGBG-5S2#AC0 is directly TTL-compatible: input thresholds are VIH ≥ 2.2 V and VIL ≤ 0.6 V, and output drive meets VOH ≥ 2.4 V (at IOH = −1 mA) and VOL ≤ 0.4 V (at IOL = 2 mA). All address, control, and data pins adhere to these levels across the full 2.7–3.6 V supply range and −40°C to +85°C temperature span. This eliminates the need for level shifters when interfacing with legacy 3.3V microcontrollers or FPGAs.

How does the RMLV1616AGBG-5S2#AC0 manage power during standby mode?

The RMLV1616AGBG-5S2#AC0 achieves ultra-low standby current of 0.5 µA typical at +25°C by disabling internal buffers and sense amplifiers when CS2 is driven low or CS1# is held high with CS2 ≥ VCC−0.2V - as defined in the DC Characteristics table (Page 5). Standby current remains under 0.3 mA maximum across temperature, and the device enters retention mode autonomously without external control logic. This behavior is validated per JEDEC JESD78 leakage test conditions and supports decade-long battery backup in sealed systems.