Renesas RMLV1616AGBG-5S2#KC0

Overview

RMLV1616AGBG-5S2 from Renesas Electronics is a 16Mb Advanced LPSRAM organized as 1,048,576 words × 16 bits (or 2,097,152 words × 8 bits), operating from a single 2.7–3.6V supply with 55ns max access time and 0.5µA typical standby current. It serves as a low-power, battery-backed memory buffer in industrial control modules, portable instrumentation, and real-time data loggers requiring non-volatile retention during power loss.

For engineers reviewing the RMLV1616AGBG-5S2 datasheet, RMLV1616AGBG-5S2 pinout, RMLV1616AGBG-5S2 application, or RMLV1616AGBG-5S2 equivalent, key selection criteria include FBGA-48 package compatibility, byte/word mode flexibility via LB#/UB# control, TTL-level I/O compatibility, and verified 1.5V minimum VCC for data retention under backup conditions.

Technical Context

The RMLV1616AGBG-5S2 implements a dual-mode memory architecture supporting both 16-bit word and 8-bit byte access through dedicated LB# and UB# inputs, with internal switching circuitry enabling independent lower/upper byte writes. Its address decoder accepts A0–A19 for full 1M×16 operation or A−1–A19 in byte mode, and it uses CS1# and CS2 to enable hierarchical chip select with distinct timing paths for fast read/write cycles.

Unlike standard SRAMs, this device supports three data retention entry methods-via CS1#, CS2, or simultaneous LB#/UB# assertion-with guaranteed data hold down to 1.5V VCC and sub-3µA retention current at +85°C. The 48-ball FBGA package (0.75mm pitch) omits the BYTE# pin, fixing operation in word mode (BYTE#=H internally), simplifying layout for space-constrained embedded systems.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), 0.75 mm ball pitch, 7.0 mm × 8.0 mm body size. No BYTE# pin - device operates exclusively in word mode (BYTE#=H internally).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the RMLV1616AGBG-5S2 uniquely combines FBGA miniaturization, 1.5V data retention, and sub-µA standby - making it the only choice for space- and energy-constrained industrial edge nodes requiring autonomous brown-out resilience.

Availability

RMLV1616AGBG-5S2 is available at Aetrix Electronics and suitable for industrial PLCs, portable medical loggers, avionics recorders, and ruggedized edge gateways requiring stable component supply across extended product lifecycles.

Supply support for RMLV1616AGBG-5S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The RMLV1616A Series was designed specifically for battery-backed, space-constrained embedded systems needing high-density SRAM with ultra-low standby power and guaranteed data retention under brown-out conditions.

FAQ

What is the minimum supply voltage required to retain data in RMLV1616AGBG-5S2?

The RMLV1616AGBG-5S2 guarantees data retention down to 1.5V VCC when entering retention mode via CS1#, CS2, or simultaneous LB#/UB# assertion. At +25°C, typical retention current is 0.5µA; at +85°C, it remains below 16µA. This allows integration into systems using single-cell Li-ion or coin-cell backup without auxiliary regulation - a capability confirmed in Section 13 of the R10DS0258EJ0101 datasheet.

Does RMLV1616AGBG-5S2 support byte-mode operation like other variants in the RMLV1616A family?

No. The RMLV1616AGBG-5S2 uses the 48-ball FBGA package, which omits the BYTE# pin. As stated on page 3 of the datasheet, "48-ball FBGA type equals BYTE#=H mode," fixing the device in 16-bit word mode only. Addressing uses A0–A19 exclusively; A−1 is not bonded. Byte-select functionality via LB#/UB# remains fully operational for partial writes, but full 8-bit addressing is not supported.

What are the thermal and mechanical specifications for the RMLV1616AGBG-5S2 FBGA package?

The RMLV1616AGBG-5S2 uses a 48-ball fine-pitch BGA per JEDEC MO-245B, with 0.75 mm ball pitch, 7.0 mm × 8.0 mm body dimensions, and 1.0 mm maximum height. It is rated for operation from −40°C to +85°C and qualifies for reflow per J-STD-020D. Ball composition is SnAgCu (lead-free), and solder mask defined pads require Type III solder paste. These specs are documented in the "Part Name Information" table on page 2 of R10DS0258EJ0101.

How does the CS2 pin function differently in RMLV1616AGBG-5S2 compared to standard SRAMs?

In the RMLV1616AGBG-5S2, CS2 is not merely an enable - it controls internal buffer activation and defines the data retention trigger path. When CS2 is low, the device enters standby; when high, it enables core logic and allows CS1# or LB#/UB# to initiate retention. Per page 13, CS2 ≤ 0.2V is one of three valid conditions for retention entry - a feature absent in conventional SRAMs and critical for fail-safe power-loss response in industrial systems.

Can RMLV1616AGBG-5S2 be used with 2.5V-only systems?

No. The RMLV1616AGBG-5S2 requires a minimum VCC of 2.7V per DC Operating Conditions (page 4), and its input thresholds (VIH ≥ 2.2V, VIL ≤ 0.6V) are optimized for 3.3V logic. While it retains data down to 1.5V, functional operation - including read/write cycles and control signal recognition - is only specified across 2.7–3.6V. Interfacing with 2.5V systems would require level translation or risk setup/hold violations.