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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas RMLV1616AGBG-5U2#AC0

Name: RMLV1616AGBG-5U2#AC0
Brand: Renesas
SKU: RMLV1616AGBG-5U2#AC0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: RMLV1616AGBG-5U2#AC0

Manufacturer:: Renesas

Category:: Memory

Package:: 48-TFBGA

Datasheet:: RMLV1616AGBG-5U2#AC0.pdf

Description:: IC SRAM 16MBIT PARALLEL 48TFBGA

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Product details

Overview

RMLV1616AGBG-5U2#AC0 from Renesas Electronics is a 16-Mbit asynchronous low-power SRAM organized as 1,048,576-word × 16-bit (or configurable as 2,097,152-word × 8-bit), fabricated with Advanced LPSRAM technology and integrated on-chip ECC for enhanced soft error immunity. It operates from a single 2.7–3.6 V supply, delivers 55 ns max access time, and draws only 4.4 µA typical standby current at +85°C-making it ideal for battery-backed industrial control and medical data logging systems.

For engineers reviewing the RMLV1616AGBG-5U2#AC0 datasheet, RMLV1616AGBG-5U2#AC0 pinout, RMLV1616AGBG-5U2#AC0 application, or RMLV1616AGBG-5U2#AC0 equivalent, this device supports dual chip select (CS1#/CS2), byte/word mode selection via dedicated LB#/UB# pins, TTL-compatible I/O, and three-state output control-critical for memory expansion in space-constrained embedded designs requiring long-term data retention under low-V_CC.

Technical Context

This SRAM implements a fully asynchronous architecture with no clocks or refresh cycles required. Its memory array supports two operational modes: word mode (1M × 16) and byte mode (2M × 8), though the 48-ball FBGA package (RMLV1616AGBG-5U2#AC0) fixes BYTE# = high, enabling only word-mode operation without external pin control.

It achieves ultra-low power via advanced LPSRAM cell design and on-chip ECC, delivering <0.04 FIT/Mb soft error rate. Data retention is guaranteed down to 1.5 V with sub-µA current draw at +25°C, activated by CS2 low, CS1# high, or simultaneous LB#/UB# high-all validated across -40°C to +85°C operating range.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory density	16 Mbit (1,048,576 × 16-bit); enables compact storage for firmware buffers or real-time telemetry in edge nodes.
Access time	55 ns max; ensures deterministic timing for microcontroller-based systems without wait states.
Supply voltage	2.7–3.6 V single supply; compatible with standard 3.3 V rails and battery backup circuits.
Standby current	4.4 µA typ. at +85°C; extends battery life beyond 10 years in always-on backup applications.
Soft error immunity	<0.04 FIT/Mb; reduces uncorrectable bit flips in radiation-prone environments like transportation or medical devices.
Data retention V_CC	1.5 V min; maintains stored configuration during brown-out or backup switchover without external hold-up capacitors.
Operating temperature	-40°C to +85°C; qualified for industrial-grade deployment in harsh ambient conditions.

Pinout & Package

Package: 48-ball fine-pitch BGA (7.5 mm × 8.5 mm, 0.75 mm ball pitch), JEITA code P-TFBGA48-7.5x8.5-0.75. RoHS-compliant, Pb-free.

Pin/Terminal	Circuit Role	Design Meaning
A0–A19	Address input	20-bit address bus supporting full 1M-word addressing in word mode; no A-1 pin used in FBGA variant.
I/O0–I/O15	Bi-directional data bus	16-bit parallel interface with three-state output; shares pins for read/write without separate DQ lines.
CS1#, CS2	Chip select inputs	Dual-select architecture allows seamless memory expansion up to 4 devices without external decoding logic.
WE#, OE#, LB#, UB#	Control signals	Independent write enable, output enable, and byte-lane controls-enables partial writes and selective reads without bus contention.
V_CC, V_SS	Power and ground	Dedicated power/ground balls distributed across package per JEDEC layout; minimizes noise coupling and improves signal integrity.
NC	No connection	Two NC balls (A15, A14 positions in top view); must remain unconnected per Renesas specification.

Key Features

Feature	Design Value
On-chip ECC	Corrects single-bit errors and detects double-bit errors in real time-eliminates need for external error correction logic.
Ultra-low ISB	0.4 µA typical at +25°C; reduces quiescent power to negligible levels in sleep-mode systems.
No refresh required	Asynchronous static operation eliminates timing-critical refresh cycles-simplifies firmware and reduces CPU overhead.
TTL-compatible I/O	VIH = 2.2 V min, VIL = 0.6 V max; interfaces directly with legacy 3.3 V microcontrollers without level shifters.
Battery backup support	Valid data retention at 1.5 V with <3 µA ICCDR; enables seamless transition to backup power during main supply failure.

Applications

Industrial PLC Data Buffer	Medical Device Configuration Storage
Use Scenario: Storing real-time sensor history and control setpoints in programmable logic controllers during mains power interruption. IC Role / Device Role / Timing Role: Asynchronous SRAM providing non-refreshing, low-latency read/write access with guaranteed data retention during brown-out events. Use Value: Enables >10-year battery-backed operation with zero data loss, meeting IEC 61000-4-29 immunity requirements for industrial automation.	Use Scenario: Holding calibration coefficients and patient-specific therapy parameters in portable infusion pumps and diagnostic monitors. IC Role / Device Role / Timing Role: Low-power memory serving as persistent configuration store with ECC protection against cosmic-ray-induced bit corruption. Use Value: Achieves <0.04 FIT/Mb soft error rate-critical for FDA Class II/III device reliability and ISO 13485 compliance.
Avionics Sensor Log Buffer	Smart Grid Meter Firmware Cache
Use Scenario: Capturing high-frequency inertial measurement unit (IMU) outputs in UAV flight controllers during GPS-denied navigation. IC Role / Device Role / Timing Role: High-speed 55 ns SRAM acting as temporary telemetry buffer before flash write, with deterministic timing and no refresh jitter. Use Value: Eliminates refresh-induced latency spikes that could disrupt real-time control loops in DO-178C-certified systems.	Use Scenario: Caching firmware update payloads and cryptographic keys in ANSI C12.22-compliant smart electricity meters. IC Role / Device Role / Timing Role: Secure, low-leakage memory holding sensitive data during power transitions between line and supercapacitor backup. Use Value: Sub-µA standby current at +85°C ensures >5-year backup runtime without thermal derating penalties.

Industrial PLC Data Buffer

Medical Device Configuration Storage

Use Scenario: Storing real-time sensor history and control setpoints in programmable logic controllers during mains power interruption.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing non-refreshing, low-latency read/write access with guaranteed data retention during brown-out events.

Use Value: Enables >10-year battery-backed operation with zero data loss, meeting IEC 61000-4-29 immunity requirements for industrial automation.

Use Scenario: Holding calibration coefficients and patient-specific therapy parameters in portable infusion pumps and diagnostic monitors.

IC Role / Device Role / Timing Role: Low-power memory serving as persistent configuration store with ECC protection against cosmic-ray-induced bit corruption.

Use Value: Achieves <0.04 FIT/Mb soft error rate-critical for FDA Class II/III device reliability and ISO 13485 compliance.

Avionics Sensor Log Buffer

Smart Grid Meter Firmware Cache

Use Scenario: Capturing high-frequency inertial measurement unit (IMU) outputs in UAV flight controllers during GPS-denied navigation.

IC Role / Device Role / Timing Role: High-speed 55 ns SRAM acting as temporary telemetry buffer before flash write, with deterministic timing and no refresh jitter.

Use Value: Eliminates refresh-induced latency spikes that could disrupt real-time control loops in DO-178C-certified systems.

Use Scenario: Caching firmware update payloads and cryptographic keys in ANSI C12.22-compliant smart electricity meters.

IC Role / Device Role / Timing Role: Secure, low-leakage memory holding sensitive data during power transitions between line and supercapacitor backup.

Use Value: Sub-µA standby current at +85°C ensures >5-year backup runtime without thermal derating penalties.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61WV102416BLL-10MLI	10 ns faster access (45 ns), higher ICC1 (35 mA typ.), no on-chip ECC, TSOP-48 only	Lacks soft error immunity and battery-retention optimization; suited for cost-sensitive non-safety-critical systems	Select when speed outweighs reliability and low-power requirements.
AS6C1008-55ZIN	Same 55 ns access, 3.3 V only (no 2.7 V min), no ECC, 48-pin SOP package	Higher ISB (10 µA typ. @ +85°C), no low-V_CC retention spec; limited to commercial-temp applications	Choose for legacy board reuse where FBGA footprint and extended temp range are not required.

Compared with IS61WV102416BLL-10MLI and AS6C1008-55ZIN, the RMLV1616AGBG-5U2#AC0 uniquely combines on-chip ECC, sub-µA standby current at +85°C, and 1.5 V data retention-making it the only option qualified for safety-critical, battery-backed industrial and medical use cases demanding long-term data integrity.

Availability

RMLV1616AGBG-5U2#AC0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device configuration storage, avionics sensor logging, smart grid meter firmware caching, and battery-backed telemetry systems requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for RMLV1616AGBG-5U2#AC0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The RMLV1616A-U Series was designed specifically for battery-backed, high-reliability embedded applications where data integrity, ultra-low power, and extended temperature operation are mandatory-not general-purpose memory replacement.

FAQ

What is the maximum access time specified for RMLV1616AGBG-5U2#AC0?

The RMLV1616AGBG-5U2#AC0 has a maximum access time of 55 ns, measured as address access time (t_AA) and read cycle time (t_RC) over the full -40°C to +85°C operating range at V_CC = 2.7–3.6 V. This value is guaranteed per Renesas datasheet R10DS0314EJ0100 Rev.1.00 and applies exclusively to the 48-ball FBGA package variant.

Does RMLV1616AGBG-5U2#AC0 support byte-mode (2M × 8) operation?

No, the RMLV1616AGBG-5U2#AC0 does not support dynamic byte-mode operation. Its 48-ball FBGA package lacks the BYTE# pin required for mode switching; the device is fixed in word-mode (1M × 16) per Renesas documentation. Only the TSOP-48 variants (e.g., RMLV1616AGSA-5U2) include BYTE# and support both configurations.

What is the minimum supply voltage for data retention in RMLV1616AGBG-5U2#AC0?

The RMLV1616AGBG-5U2#AC0 guarantees data retention down to 1.5 V, as specified in the Low V_CC Data Retention Characteristics table (Page 12). This applies when entering retention mode via CS2 low, CS1# high, or LB#/UB# high-enabling reliable operation during brown-out or battery switchover without external supervision.

How many address lines does RMLV1616AGBG-5U2#AC0 require for full memory access?

The RMLV1616AGBG-5U2#AC0 requires 20 address lines (A0–A19) to access its full 1,048,576-word × 16-bit organization in word mode. The FBGA variant does not implement the A-1 pin used in byte-mode TSOP packages; all 20 address bits are active and necessary for complete addressing.

Is RMLV1616AGBG-5U2#AC0 RoHS compliant and lead-free?

Yes, the RMLV1616AGBG-5U2#AC0 is RoHS applicable and Pb-free, as explicitly stated in the "Features" section of the Renesas datasheet R10DS0314EJ0100. The 48-ball FBGA package uses lead-free solder spheres and complies with EU Directive 2011/65/EU and related amendments.

RMLV1616AGBG-5U2#AC0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: RMLV1616A

Package/Case:: 48-TFBGA

Packaging:: Bulk

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 16Mbit

Memory Organization:: 1M x 16, 2M x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 55ns

Access Time:: 55 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-TFBGA (7.5x8.5)

RMLV1616AGBG-5U2#AC0 FAQ

1.How can I place an order for RMLV1616AGBG-5U2#AC0 through Aetrix?

Please submit a Request for Quotation (RFQ) for RMLV1616AGBG-5U2#AC0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RMLV1616AGBG-5U2#AC0 reliable?

The price and inventory of RMLV1616AGBG-5U2#AC0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV1616AGBG-5U2#AC0 is usually 5 days.

3.What payment methods are accepted for RMLV1616AGBG-5U2#AC0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV1616AGBG-5U2#AC0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RMLV1616AGBG-5U2#AC0?

RMLV1616AGBG-5U2#AC0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RMLV1616AGBG-5U2#AC0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RMLV1616AGBG-5U2#AC0?

For technical support, including RMLV1616AGBG-5U2#AC0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV1616AGBG-5U2#AC0 requirements.

6.How does Aetrix verify that RMLV1616AGBG-5U2#AC0 is sourced from the original manufacturer or authorized distributors?

All RMLV1616AGBG-5U2#AC0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV1616AGBG-5U2#AC0 meets industry standards.

7.What is the process for return or replacement of RMLV1616AGBG-5U2#AC0?

All RMLV1616AGBG-5U2#AC0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV1616AGBG-5U2#AC0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RMLV1616AGBG-5U2#AC0 part is unused and in its original packaging.

Return procedure for RMLV1616AGBG-5U2#AC0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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