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Renesas RMLV1616AGBG-5U2#KC0
- Part No.:
- RMLV1616AGBG-5U2#KC0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
RMLV1616AGBG-5U2#KC0.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,558
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Product details
Overview
RMLV1616AGBG-5U2#KC0 from Renesas Electronics is a 16-Mbit asynchronous low-power SRAM organized as 1,048,576-word × 16-bit (or 2,097,152-word × 8-bit in byte mode), fabricated with Advanced LPSRAM technology and integrated on-chip ECC for enhanced soft error immunity. It operates from a single 2.7–3.6 V supply, delivers 55 ns max access time, and draws only 4.4 µA typical standby current at +85°C - making it ideal for battery-backed industrial control, medical data loggers, and railway signaling systems requiring long-term data retention without refresh.
For engineers reviewing the RMLV1616AGBG-5U2#KC0 datasheet, RMLV1616AGBG-5U2#KC0 pinout, RMLV1616AGBG-5U2#KC0 application, or RMLV1616AGBG-5U2#KC0 equivalent, key selection criteria include its 48-ball FBGA (0.75 mm pitch) package, word-mode-only operation (BYTE# fixed high), ultra-low ISB1 standby current, and support for three independent chip-select configurations (CS1#, CS2) enabling seamless memory expansion in space-constrained embedded designs.
Technical Context
This device implements a fully asynchronous interface with no clocks or refresh cycles required. Its dual chip-select architecture (CS1# active-low, CS2 active-high) allows hierarchical memory mapping, while separate LB#/UB# controls enable byte-level write granularity in word mode.
The 48-ball FBGA variant operates exclusively in word mode (1M × 16), eliminating BYTE# pin functionality per datasheet Note 7. Data retention is guaranteed down to 1.5 V VCC with sub-5 µA ICCDR current at +70°C, enabled via CS2 low, CS1# high, or simultaneous LB#/UB# high assertion - critical for fail-safe backup operation in power-loss scenarios.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 16 Mbit (1,048,576 × 16-bit word mode only; BYTE# not supported) |
| Access time | 55 ns max - defines minimum read cycle time in high-reliability real-time systems |
| Supply voltage | 2.7 V to 3.6 V - compatible with standard 3.3 V rails and brown-out tolerant down to 1.5 V for data retention |
| Standby current | 4.4 µA typ. at +85°C - enables >10-year battery life in coin-cell–powered backup applications |
| Soft error rate | < 0.04 FIT/Mb - achieved via on-chip ECC and Advanced LPSRAM process, reducing uncorrectable errors by >10× vs. standard SRAM |
| Operating temperature | −40°C to +85°C - qualified for industrial and transportation-grade environments |
| Package | 48-ball FBGA, 7.5 mm × 8.5 mm, 0.75 mm ball pitch - supports fine-pitch PCB routing and thermal performance (Θja = 37.6°C/W) |
Pinout & Package
Package: 48-ball fine-pitch BGA (JEITA code P-TFBGA48-7.5x8.5-0.75), RoHS-compliant, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address inputs | 100% addressable space for 1M-word × 16-bit configuration; A-1 not used (BYTE# absent) |
| I/O0–I/O15 | Bidirectional data bus | True common I/O with 3-state output control; supports full 16-bit parallel transfers |
| CS1#, CS2 | Chip select inputs | CS1# active-low + CS2 active-high enables hierarchical decoding; both required for valid access |
| WE#, OE#, LB#, UB# | Control signals | Asynchronous write enable, output enable, and byte-lane selects - no clock dependency or timing constraints beyond tWP/tAW |
| VCC, VSS | Power and ground | Single 3.3 V supply; decoupling required per JEDEC guidelines due to fast edge rates (5 ns rise/fall) |
| NC (pins 13, 31) | No-connect | Not bonded internally; must be left floating or tied to VSS per layout best practice |
Key Features
| Feature | Design Value |
|---|---|
| On-chip ECC with soft error immunity | < 0.04 FIT/Mb - eliminates need for external error correction logic in safety-critical systems |
| Ultra-low standby current | 4.4 µA typ. at +85°C - extends battery backup duration beyond 10 years in always-on monitoring nodes |
| Asynchronous operation | No clocks, no refresh - simplifies timing design and removes jitter-sensitive clock tree requirements |
| Dual chip-select architecture | CS1# + CS2 enables 3-level decode (standby/active/select) for multi-SRAM bank expansion without glue logic |
| Low-voltage data retention | Operates down to 1.5 V VCC with <5 µA retention current - ensures data integrity during brown-out or battery sag events |
Applications
| Railway Signaling Controller | Medical Patient Monitor |
|---|---|
Use Scenario: Real-time logging of track occupancy status and signal interlocking states during mains failure. IC Role / Device Role / Timing Role: Non-volatile data buffer retaining critical safety state for ≥72 hours on backup coin cell. Use Value: On-chip ECC prevents silent data corruption in radiation-prone rail tunnels; 55 ns access supports deterministic response to emergency stop commands. | Use Scenario: Continuous ECG waveform buffering during AC power interruption in ICU bedside units. IC Role / Device Role / Timing Role: Battery-backed SRAM holding 30+ seconds of raw analog samples prior to flash storage. Use Value: 4.4 µA standby current at +40°C enables >5-year coin-cell lifetime; 16-bit bus matches ADC output width for zero-cycle data packing. |
| Industrial PLC I/O Module | Avionics Flight Data Recorder |
Use Scenario: Storing last-known I/O configuration and diagnostic flags during unexpected power loss. IC Role / Device Role / Timing Role: Fast-access shadow RAM mirroring volatile register contents before shutdown. Use Value: Dual CS architecture allows direct replacement of legacy 8-bit SRAMs using same PCB footprint; no layout changes needed. | Use Scenario: Capturing pre-crash sensor telemetry in hardened black box recorders operating at −40°C to +85°C. IC Role / Device Role / Timing Role: Radiation-tolerant memory storing 10+ minutes of 16-bit sensor streams without refresh. Use Value: FIT rate <0.04/Mb meets DO-160 Section 22 lightning-induced transient immunity requirements for airborne systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102416BLL-10MLI | 10 ns faster access (45 ns), higher ICC1 (35 mA typ.), no on-chip ECC, TSOP-48 only | Lacks soft error immunity; requires external watchdog/ECC for safety-critical use | Select when speed outweighs radiation tolerance and board space permits larger TSOP package |
| MT45W8MW16BGX-55 IT:B | Same 55 ns access, 48-ball FBGA, but no on-chip ECC and higher ISB1 (10 µA typ. @ +85°C) | Higher standby current reduces battery life; no FIT rating provided | Choose for cost-sensitive non-safety applications where ECC is handled at MCU level |
Compared with IS61WV102416BLL-10MLI and MT45W8MW16BGX-55 IT:B, RMLV1616AGBG-5U2#KC0 uniquely combines on-chip ECC, sub-5 µA +85°C standby, and FBGA packaging - delivering verified soft error resilience without firmware overhead or external components, essential for certified industrial and transportation systems.
Availability
RMLV1616AGBG-5U2#KC0 is available at Aetrix Electronics and suitable for railway signaling controllers, medical patient monitors, and industrial PLC I/O modules requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for RMLV1616AGBG-5U2#KC0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The RMLV1616A-U Series was designed specifically for battery-backed, high-reliability embedded systems where data integrity under radiation, temperature stress, and power instability is non-negotiable - targeting rail, medical, and avionics applications demanding FIT-certified memory.
FAQ
What is the maximum access time specification for RMLV1616AGBG-5U2#KC0?
The RMLV1616AGBG-5U2#KC0 has a maximum access time of 55 ns, measured as address access time (tAA) and read cycle time (tRC) across the full operating temperature range (−40°C to +85°C) and supply voltage (2.7 V to 3.6 V). This value is guaranteed by Renesas and applies strictly to the 48-ball FBGA package variant operating in word mode (1M × 16), as confirmed in the R10DS0314EJ0100 datasheet revision 1.00, page 6.
Does RMLV1616AGBG-5U2#KC0 support byte-mode (2M × 8) operation?
No, RMLV1616AGBG-5U2#KC0 does not support byte-mode operation. As stated in the datasheet (Note 7, page 4), the 48-ball FBGA variant operates exclusively in word mode (1,048,576 × 16-bit), and the BYTE# pin is not implemented - unlike the TSOP-48 variants (e.g., RMLV1616AGSA-5U2). The pinout diagram on page 2 confirms absence of BYTE# in the FBGA top view, and all timing waveforms on pages 8–11 omit BYTE# references for this package.
What is the standby current of RMLV1616AGBG-5U2#KC0 at +85°C?
The RMLV1616AGBG-5U2#KC0 exhibits a typical standby current (ISB1) of 4.4 µA and a maximum of 8 µA at +85°C, as specified in the DC Characteristics table (page 5) of the R10DS0314EJ0100 datasheet. This low quiescent draw is achieved through Renesas's Advanced LPSRAM process and enables multi-year battery backup in always-on systems - a key differentiator versus standard SRAMs.
How does on-chip ECC in RMLV1616AGBG-5U2#KC0 improve system reliability?
The RMLV1616AGBG-5U2#KC0 integrates on-chip ECC that achieves a soft error rate of <0.04 FIT/Mb (per JEDEC JESD89A), reducing uncorrectable bit errors by over one order of magnitude compared to conventional SRAMs. This eliminates the need for external error-correction logic or software-based scrubbing, directly enhancing functional safety compliance in IEC 61508 SIL-2 or EN 50129 applications without increasing MCU processing load or memory bandwidth overhead.
What package type and dimensions does RMLV1616AGBG-5U2#KC0 use?
RMLV1616AGBG-5U2#KC0 uses a 48-ball fine-pitch ball grid array (FBGA) package with JEITA code P-TFBGA48-7.5x8.5-0.75 - measuring 7.5 mm × 8.5 mm with 0.75 mm ball pitch. This compact, thermally efficient package (Θja = 37.6°C/W) is RoHS-compliant and Pb-free, supporting high-density PCB layouts in space-constrained industrial and transportation electronics where TSOP packages are mechanically unsuitable.
RMLV1616AGBG-5U2#KC0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- RMLV1616A
- Package/Case:
- 48-TFBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16, 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (7.5x8.5)
RMLV1616AGBG-5U2#KC0 FAQ
1.How can I place an order for RMLV1616AGBG-5U2#KC0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV1616AGBG-5U2#KC0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV1616AGBG-5U2#KC0 reliable?
The price and inventory of RMLV1616AGBG-5U2#KC0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV1616AGBG-5U2#KC0 is usually 5 days.
3.What payment methods are accepted for RMLV1616AGBG-5U2#KC0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV1616AGBG-5U2#KC0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMLV1616AGBG-5U2#KC0?
RMLV1616AGBG-5U2#KC0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMLV1616AGBG-5U2#KC0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMLV1616AGBG-5U2#KC0?
For technical support, including RMLV1616AGBG-5U2#KC0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV1616AGBG-5U2#KC0 requirements.
6.How does Aetrix verify that RMLV1616AGBG-5U2#KC0 is sourced from the original manufacturer or authorized distributors?
All RMLV1616AGBG-5U2#KC0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV1616AGBG-5U2#KC0 meets industry standards.
7.What is the process for return or replacement of RMLV1616AGBG-5U2#KC0?
All RMLV1616AGBG-5U2#KC0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV1616AGBG-5U2#KC0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV1616AGBG-5U2#KC0 part is unused and in its original packaging.
Return procedure for RMLV1616AGBG-5U2#KC0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RMLV1616AGBG-5U2#KC0 Tags
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