Renesas RMLV1616AGSA-4U2#AA0

Overview

RMLV1616AGSA-4U2#AA0 from Renesas Electronics is a 16-Mbit asynchronous low-power SRAM organized as 1,048,576-word × 16-bit (or configurable as 2,097,152-word × 8-bit), featuring on-chip ECC for enhanced soft error immunity (< 0.04 FIT/Mb), ultra-low standby current (0.4 µA typ. at 25°C), and 45 ns access time - deployed in battery-backed industrial control, medical data loggers, and railway signaling systems requiring non-volatile data retention without refresh.

For engineers reviewing the RMLV1616AGSA-4U2#AA0 datasheet, RMLV1616AGSA-4U2#AA0 pinout, RMLV1616AGSA-4U2#AA0 application, or RMLV1616AGSA-4U2#AA0 equivalent, this page delivers verified package mapping (48-pin TSOP-I), byte/word mode configuration logic, battery backup retention behavior down to 1.5 V, and direct functional alternatives with documented timing and interface compatibility.

Technical Context

This device implements a fully asynchronous architecture with no clocks or refresh cycles, relying on dual chip select (CS1#, CS2) and independent byte enable (LB#, UB#) for flexible memory expansion. Its on-chip ECC operates transparently during read/write, reducing system-level error correction overhead while maintaining full TTL compatibility across all I/Os.

It supports three distinct data retention entry modes - via CS2 low, CS1# high (with CS2 ≥ VCC−0.2V), or simultaneous LB#/UB# high - each enabling data hold at VCC as low as 1.5 V while drawing ≤ 4.4 µA typical current at +85°C, critical for long-duration backup operation in power-fail scenarios.

Key Specifications

Pinout & Package

Package: 48-pin plastic TSOP (I), 12 mm × 20 mm footprint, JEITA code P-TSOP(1)48−12×18.4−0.50, lead-free and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power, battery-backed SRAM applications.

Compared with RMLV1616AGSA-4U2#AA0, IS61LV25616AL-10TLI trades ECC and ultra-low ISB for lower unit cost, while AS6C1008-55PCN retains speed but lacks integrated retention control - making RMLV1616AGSA-4U2#AA0 uniquely suited for compact, safety-certifiable battery-backed designs.

Availability

RMLV1616AGSA-4U2#AA0 is available at Aetrix Electronics and suitable for railway signaling controllers, medical patient monitors, and industrial PLC data loggers requiring stable component supply, long-term lifecycle assurance, and guaranteed Pb-free compliance.

Supply support for RMLV1616AGSA-4U2#AA0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The RMLV1616A-U Series was developed specifically for mission-critical battery-backed applications demanding high soft-error immunity, ultra-low leakage, and seamless integration into legacy 3.3 V bus architectures - targeting rail, medical, and energy sectors.

FAQ

What is the exact memory organization supported by RMLV1616AGSA-4U2#AA0?

RMLV1616AGSA-4U2#AA0 supports two hardware-configurable organizations: 1,048,576-word × 16-bit (1M×16) in word mode, or 2,097,152-word × 8-bit (2M×8) in byte mode. The BYTE# pin selects mode - tied high for 1M×16, low for 2M×8. This dual-mode capability is confirmed in the R10DS0314EJ0100 datasheet, Page 3 and Page 7, and applies exclusively to the TSOP-I package variant like RMLV1616AGSA-4U2#AA0.

Does RMLV1616AGSA-4U2#AA0 require an external clock or refresh circuit?

No, RMLV1616AGSA-4U2#AA0 is a fully asynchronous SRAM with no clock input and zero refresh requirement. Its operation relies solely on address, control (CS1#, CS2, WE#, OE#, LB#, UB#), and data signals. This eliminates timing-critical refresh logic, simplifies PCB layout, and avoids refresh-induced latency spikes - a key advantage over DRAM or pseudo-static RAM. All timing parameters in the datasheet (e.g., tRC = 45 ns) assume purely asynchronous control.

How does the on-chip ECC in RMLV1616AGSA-4U2#AA0 function during normal read/write operations?

The on-chip ECC in RMLV1616AGSA-4U2#AA0 operates transparently: single-bit errors are automatically corrected on read, and double-bit errors are flagged (but not corrected). No external logic or software intervention is needed. The ECC engine is integrated into the sense amplifier path and adds no latency - read access remains 45 ns. This capability is intrinsic to the Advanced LPSRAM technology and is validated per JEDEC JESD89A, yielding <0.04 FIT/Mb soft error immunity.

What are the valid methods to enter data retention mode on RMLV1616AGSA-4U2#AA0?

RMLV1616AGSA-4U2#AA0 supports three mutually exclusive data retention entry methods: (1) pull CS2 ≤ 0.2 V, (2) drive CS1# ≥ VCC−0.2 V while holding CS2 ≥ VCC−0.2 V or ≤ 0.2 V, or (3) assert both LB# and UB# ≥ VCC−0.2 V with CS1# ≤ 0.2 V and CS2 ≥ VCC−0.2 V. All three methods allow operation down to VCC = 1.5 V with ISB1 ≤ 8 µA at +85°C, as specified in Page 12 of R10DS0314EJ0100.

Can RMLV1616AGSA-4U2#AA0 be used with a 2.5 V supply?

No, RMLV1616AGSA-4U2#AA0 is rated for 2.7 V to 3.6 V only. Operation below 2.7 V violates DC Operating Conditions (Page 4), risks data corruption during writes, and invalidates retention guarantees. The minimum VCC for reliable data retention is 1.5 V, but that applies only during retention mode - active read/write requires ≥2.7 V. Using 2.5 V may cause setup/hold violations and increased bit error rates, especially at temperature extremes.