Renesas RMLV1616AGSA-5S2#AA0

Overview

RMLV1616AGSA-5S2#AA0 from Renesas Electronics is a 16Mb Advanced LPSRAM organized as 1,048,576 words × 16 bits (or 2,097,152 words × 8 bits), operating from a single 2.7–3.6V supply with 55ns max access time and 0.5µA typical standby current. It supports battery backup operation via low-voltage data retention down to 1.5V and is used in industrial control modules requiring nonvolatile SRAM persistence during power loss.

For engineers reviewing the RMLV1616AGSA-5S2#AA0 datasheet, RMLV1616AGSA-5S2#AA0 pinout, RMLV1616AGSA-5S2#AA0 application, or RMLV1616AGSA-5S2#AA0 equivalent, key selection criteria include TSOP (I) package compatibility, byte/word mode flexibility via BYTE#, dual chip select architecture (CS1#/CS2), and verified low-power standby performance across –40°C to +85°C.

Technical Context

The RMLV1616AGSA-5S2#AA0 implements a dual-bank address decoder supporting both word (A0–A19) and byte (A–1–A19) addressing modes, with BYTE# pin enabling mode selection in TSOP (I) and µTSOP (II) packages. Its memory array delivers 16-bit bidirectional I/O through three-state DQ0–DQ15 pins, controlled by independent LB#/UB# and OE# signals.

Operation relies on hierarchical chip enable logic: CS1# active-low and CS2 active-high must simultaneously assert for read/write cycles, while standby is entered when either CS2 is low or CS1# is high. Data retention is maintained at VCC ≥ 1.5V using any of three control paths - CS1#, CS2, or simultaneous LB#/UB# assertion - each with defined tCDR (0ns) and tR (5ms) recovery timing.

Key Specifications

Pinout & Package

Package: 48-pin plastic TSOP (I), 12 mm × 20 mm body, 0.5 mm lead pitch, JEDEC MO-141 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the RMLV1616AGSA-5S2#AA0 uniquely combines 55ns speed, wide 2.7–3.6V operation, byte/word mode selection, and dual-byte control - making it optimal for mixed-bus-width industrial systems needing long-term data retention without auxiliary components.

Availability

RMLV1616AGSA-5S2#AA0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical event logging, automotive black box recording, and point-of-sale transaction caching requiring stable component supply and guaranteed long-term availability.

Supply support for RMLV1616AGSA-5S2#AA0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The RMLV1616A Series was designed specifically for battery-backed, low-power SRAM applications in space-constrained industrial controllers and portable medical devices requiring reliable data retention across extended temperature ranges.

FAQ

What is the minimum supply voltage required for data retention in RMLV1616AGSA-5S2#AA0?

The RMLV1616AGSA-5S2#AA0 maintains stored data at VCC as low as 1.5 V, verified under all three retention control modes (CS1#, CS2, or LB#/UB# assertion). This specification enables robust operation during brown-out conditions or coin-cell backup scenarios without external hold-up circuitry. The RMLV1616AGSA-5S2#AA0 achieves this with ICCDR = 0.5 µA typical at 25°C, scaling predictably with temperature per datasheet Table on Page 13.

Does RMLV1616AGSA-5S2#AA0 support both 8-bit and 16-bit bus interfaces?

Yes, the RMLV1616AGSA-5S2#AA0 supports both configurations via the BYTE# pin: when pulled high (≥ VCC–0.2V), it operates in 16-bit word mode (A0–A19); when pulled low (≤ 0.2V), it enters 8-bit byte mode (A–1–A19). This eliminates the need for separate 8-bit and 16-bit SRAM SKUs. The RMLV1616AGSA-5S2#AA0 also provides dedicated LB# and UB# pins for selective byte writes without additional logic.

What is the function of the dual chip select signals (CS1# and CS2) in RMLV1616AGSA-5S2#AA0?

CS1# (active-low) and CS2 (active-high) form a hierarchical enable pair: both must be asserted simultaneously for read/write operations. This architecture allows daisy-chained or decoded multi-SRAM systems - for example, using CS2 as a bank selector and CS1# as a per-device strobe. Standby is triggered if CS2 is low OR CS1# is high, providing flexible power management. The RMLV1616AGSA-5S2#AA0's timing tables confirm tACS1/tACS2 ≤ 45ns, ensuring tight decode margins.

Can RMLV1616AGSA-5S2#AA0 be interfaced directly with 5V TTL logic?

No - the RMLV1616AGSA-5S2#AA0 is strictly a 3V device with VIH = 2.2V min and VIL = 0.6V max, making it incompatible with 5V TTL output levels (which exceed VCC+0.3V absolute maximum). However, it is fully TTL-compatible within its 2.7–3.6V domain: inputs accept standard TTL thresholds, and outputs drive VOH = 2.4V @ –1mA, matching 3V TTL receivers. Direct connection to 5V systems requires level translation. The RMLV1616AGSA-5S2#AA0 does not tolerate 5V on any pin.

How does the RMLV1616AGSA-5S2#AA0 achieve 0.5µA standby current?

The RMLV1616AGSA-5S2#AA0 achieves 0.5µA typical standby current through Renesas' Advanced LPSRAM process, which minimizes leakage in deep-sleep states. This occurs when CS2 is low (or CS1# is high, or LB#/UB# are both high), disabling internal buffers and isolating the memory array. The value is measured at 25°C with all inputs at valid logic levels and VCC = 3.0V. The RMLV1616AGSA-5S2#AA0 datasheet specifies ISB1 = 0.5µA typ. (Page 5, DC Characteristics), validated across production lots.