Renesas RMLV1616AGSD-5S2#AC0

Overview

RMLV1616AGSD-5S2 from Renesas Electronics is a 16Mb Advanced LPSRAM organized as 1,048,576 words × 16 bits (or 2,097,152 words × 8 bits), operating from a single 2.7–3.6V supply with 55ns max access time and 0.5µA typical standby current. It supports byte/word mode selection via BYTE#, UB#/LB# controls, and is optimized for battery-backed systems requiring low-power retention.

For engineers reviewing the RMLV1616AGSD-5S2 datasheet, RMLV1616AGSD-5S2 pinout, RMLV1616AGSD-5S2 application, or RMLV1616AGSD-5S2 equivalent, key selection criteria include µTSOP (II) package compatibility, CS1#/CS2 dual-chip-select timing, TTL-level I/O compatibility, and verified data retention down to 1.5V at -40°C to +85°C.

Technical Context

This SRAM implements a dual-bank address decoder with independent upper/lower byte enable (UB#/LB#) and byte-mode control (BYTE#), supporting both word and byte addressing modes. Its architecture enables simultaneous low-power operation and fast random-access performance through advanced LPSRAM cell design and optimized sense amplifier circuitry.

The device uses two chip select inputs (CS1# active-low, CS2 active-high) to gate internal buffers and enable three-state output control. Standby current drops to ≤0.3mA (max) or 0.5µA (typ. at 25°C) when either CS2 is low or CS1# is high - enabling robust battery backup functionality without external power management circuitry.

Key Specifications

Pinout & Package

Package: 52-pin plastic µTSOP (II), 10.79mm × 10.49mm footprint, 0.5mm lead pitch, JEDEC MO-218AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61WV102416BLL-10MLI and AS6C1008-55PCN, the RMLV1616AGSD-5S2 uniquely balances µTSOP (II) mechanical compatibility, dual-chip-select power gating, and byte/word mode configurability - making it optimal for upgrade paths from legacy 8-bit designs and battery-dependent embedded platforms.

Availability

RMLV1616AGSD-5S2 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device nonvolatile caching, and automotive infotainment boot memory requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for RMLV1616AGSD-5S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The RMLV1616A Series was designed specifically for low-power, high-reliability embedded memory applications - emphasizing battery-backed operation, wide temperature resilience, and direct TTL interface compatibility without external support components.

FAQ

What is the maximum operating frequency supported by RMLV1616AGSD-5S2?

RMLV1616AGSD-5S2 does not specify a clock frequency because it is an asynchronous SRAM. Its performance is defined by access time: 55ns maximum read/write cycle time implies effective throughput up to ~18.2 MHz in continuous burst mode. Timing margins must be validated per application using tRC, tAA, tWC, and tWP parameters from the datasheet.

Does RMLV1616AGSD-5S2 support true 8-bit data bus operation?

Yes. RMLV16AGSD-5S2 supports native 8-bit operation via BYTE# pin assertion (low), which reconfigures the memory array to 2,097,152 × 8-bit organization. In this mode, DQ0–DQ7 carry valid data while DQ8–DQ15 enter high-impedance unless UB# is also asserted - enabling clean 8-bit bus interfacing without external demultiplexing.

Can RMLV1616AGSD-5S2 retain data when V_CC drops below 2.7V?

Yes. RMLV1616AGSD-5S2 guarantees data retention down to 1.5V V_CC across its full -40°C to +85°C operating range. Retention is enabled by asserting CS2 ≤ 0.2V, CS1# ≥ V_CC−0.2V, or LB#/UB# ≥ V_CC−0.2V - allowing use with depleted batteries or unregulated backup supplies without data corruption.

Is the RMLV1616AGSD-5S2 pinout compatible with other devices in the RMLV1616A Series?

No. RMLV1616AGSD-5S2 uses a 52-pin µTSOP (II) package with unique pin assignments distinct from the 48-pin TSOP (I) and 48-ball FBGA variants. While functional signals (e.g., A0–A19, DQ0–DQ15, CS1#, WE#) are consistent, physical pin locations differ - especially for CS2, BYTE#, and NC positions - requiring dedicated PCB layout for this variant.

What is the purpose of the CS2 pin on RMLV1616AGSD-5S2?

CS2 is an active-high chip select that works in tandem with active-low CS1# to provide hierarchical memory enable control. When CS2 is low, the device enters standby regardless of CS1# state. When CS2 is high, CS1# determines active/inactive mode - enabling flexible power sequencing, multi-bank addressing, and low-power gating in complex memory subsystems.