Renesas RMLV1616AGSD-5S2#HC0

Overview

RMLV1616AGSD-5S2 from Renesas Electronics is a 16Mb advanced low-power static RAM (LPSRAM), organized as 1,048,576 words × 16 bits or 2,097,152 words × 8 bits, operating from a single 2.7–3.6V supply with 55ns max access time and 0.5µA typical standby current. It supports byte/word mode operation via BYTE#, UB#, and LB# controls and is designed for battery-backed memory systems in industrial and embedded controllers.

For engineers reviewing the RMLV1616AGSD-5S2 datasheet, RMLV1616AGSD-5S2 pinout, RMLV1616AGSD-5S2 application, or RMLV1616AGSD-5S2 equivalent, key selection criteria include µTSOP (II) package compatibility, low-voltage data retention down to 1.5V, TTL-level I/O compatibility, and dual chip-select architecture enabling multi-bank memory mapping.

Technical Context

The RMLV1616AGSD-5S2 implements a dual-chip-select interface (CS1# active-low, CS2 active-high) with independent byte enable (LB#/UB#) and byte-mode control (BYTE#), allowing flexible 8-bit or 16-bit data bus interfacing without external logic. Its address buffer and sense amplifier architecture supports simultaneous word- and byte-access modes, with BYTE# pin functional only in TSOP (I) and µTSOP (II) packages.

It features three-state output drivers compatible with TTL voltage thresholds (VIH ≥ 2.2V, VIL ≤ 0.6V), low-noise output timing (tOE ≤ 22ns, tOLZ ≤ 5ns), and multiple data retention entry paths-via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V, or LB#/UB# ≥ VCC−0.2V-enabling robust power-loss recovery in backup systems.

Key Specifications

Pinout & Package

Package: 52-pin plastic µTSOP (II), dimensions 10.79 mm × 10.49 mm, surface-mount, JEDEC standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-density low-power SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the RMLV1616AGSD-5S2 uniquely balances ultra-low standby current (0.5µA), µTSOP (II) mechanical compatibility, and hardware-configurable byte/word mode-making it optimal for battery-constrained industrial edge devices where pinout stability and retention robustness are non-negotiable.

Availability

RMLV1616AGSD-5S2 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device configuration storage, automotive telematics logging, network edge router packet staging, and battery-backed real-time clock applications requiring stable component supply across extended product lifecycles.

Supply support for RMLV1616AGSD-5S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The RMLV1616A Series was developed to deliver high-density, low-power static RAM for battery-backed and energy-sensitive embedded systems-emphasizing data retention integrity, wide temperature operation, and simplified interface design.

FAQ

What is the minimum supply voltage required to retain data in RMLV1616AGSD-5S2?

The RMLV1616AGSD-5S2 guarantees data retention down to 1.5V VCC when entering retention mode via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V, or LB#/UB# ≥ VCC−0.2V. This specification is validated across the full −40°C to +85°C operating range and enables reliable operation during brown-out events without external supervision circuitry. The RMLV1616AGSD-5S2 retains stored values even when main power drops below normal operating levels, provided one of the defined retention entry conditions is met.

Does RMLV1616AGSD-5S2 support both 8-bit and 16-bit data bus configurations?

Yes, the RMLV1616AGSD-5S2 supports both configurations through its BYTE# pin: when BYTE# ≤ 0.2V, it operates in 2M-word × 8-bit mode; when BYTE# ≥ VCC−0.2V, it operates in 1M-word × 16-bit mode. This hardware-selectable mode eliminates the need for external multiplexing logic and allows dynamic reconfiguration based on system bus width. The RMLV1616AGSD-5S2 maintains full timing compliance in both modes, with identical 55ns access time and 0.5µA standby current.

What is the function of the dual chip-select signals (CS1# and CS2) on RMLV1616AGSD-5S2?

CS1# (active-low) and CS2 (active-high) form a two-signal chip-select pair that enables hierarchical memory banking and reduces address decoder complexity. Both must be asserted simultaneously (CS1# = L, CS2 = H) for normal read/write operations. This architecture allows multiple RMLV1616AGSD-5S2 devices to share address/data buses while using unique CS combinations-supporting scalable memory expansion without additional gating logic. The RMLV1616AGSD-5S2 uses CS2 to control internal buffers, making it essential for data retention mode activation.

Can RMLV1616AGSD-5S2 be directly interfaced with 3.3V microcontrollers without level shifters?

Yes, the RMLV1616AGSD-5S2 is fully TTL-compatible: its input thresholds require VIH ≥ 2.2V and VIL ≤ 0.6V, and its outputs drive VOH ≥ 2.4V (at −1mA) and VOL ≤ 0.4V (at 2mA)-all within standard 3.3V logic margins. This ensures interoperability with common 3.3V MCUs, FPGAs, and ASICs without external level translation. The RMLV1616AGSD-5S2 also features 8pF input capacitance and 10pF I/O capacitance, minimizing signal integrity concerns on typical 3.3V bus layouts.

How does the standby current of RMLV1616AGSD-5S2 compare to standard SRAMs in the same density class?

The RMLV1616AGSD-5S2 delivers 0.5µA typical standby current at +25°C-up to 10× lower than conventional 16Mb SRAMs (e.g., IS61LV25616AL at 2µA). This ultra-low quiescent draw is achieved through Renesas's Advanced LPSRAM process and optimized cell design, enabling multi-year battery life in backup applications. The RMLV1616AGSD-5S2 maintains this advantage across temperature, with only 5µA max at +85°C, making it suitable for unregulated, thermally demanding deployments.