Renesas RMLV3216AGBG-5S2#AC0

Overview

RMLV3216AGBG-5S2#AC0 from Renesas Electronics is a 32Mb Advanced LPSRAM organized as 2,097,152-word × 16-bit (or 4,194,304-word × 8-bit), operating from a single 2.7–3.6V supply with 55ns max access time and 0.6µA typical standby current at +25°C. It supports battery backup operation and is implemented in a 48-ball FBGA package with 0.75mm ball pitch for space-constrained embedded systems requiring non-volatile data retention during low-power states.

For engineers reviewing the RMLV3216AGBG-5S2#AC0 datasheet, RMLV3216AGBG-5S2#AC0 pinout, RMLV3216AGBG-5S2#AC0 application, or RMLV3216AGBG-5S2#AC0 equivalent, this page delivers verified technical context, FBGA-specific pin mapping, byte/word mode operation details, low-V_CC data retention behavior, and validated alternative SRAMs for industrial control, medical instrumentation, and portable data loggers.

Technical Context

The RMLV3216AGBG-5S2#AC0 implements a dual-mode memory architecture supporting both 16-bit word and 8-bit byte access via LB#/UB# control, with BYTE# internally fixed to high (word mode) in the 48-ball FBGA variant. Its advanced LPSRAM process enables stable operation across –40°C to +85°C while maintaining sub-1µA standby current at room temperature.

It features TTL-compatible inputs/outputs, three-state DQ drivers, and multiple data retention entry paths-via CS2 ≤ 0.2V, CS1# ≥ V_CC–0.2V, or simultaneous LB#/UB# ≥ V_CC–0.2V-enabling flexible power management in battery-backed systems without external logic.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), 0.75 mm ball pitch, 7.0 mm × 8.0 mm body size, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61WV204816BLL-10MLI and AS6C4008-55ZIN, the RMLV3216AGBG-5S2#AC0 delivers the lowest standby current in its speed class and the smallest footprint, making it optimal for battery-critical, space-constrained designs where retention robustness and thermal resilience are prioritized over raw bandwidth.

Availability

RMLV3216AGBG-5S2#AC0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical monitoring, automotive black box logging, and smart energy metering requiring stable component supply across extended product lifecycles.

Supply support for RMLV3216AGBG-5S2#AC0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.

The RMLV3216A Series was developed to deliver high-density, ultra-low-power static RAM for battery-backed systems demanding long-term data integrity and minimal quiescent consumption in harsh thermal environments.

FAQ

What is the minimum supply voltage required for data retention in RMLV3216AGBG-5S2#AC0?

The RMLV3216AGBG-5S2#AC0 guarantees data retention down to 1.5V V_CC, as specified in the Low V_CC Data Retention Characteristics table. This applies across the full –40°C to +85°C operating range and enables reliable operation during brown-out conditions or battery discharge below nominal voltage. The RMLV3216AGBG-5S2#AC0 achieves this with typical retention current of 0.6µA at +25°C.

Does RMLV3216AGBG-5S2#AC0 support byte-mode operation despite lacking a physical BYTE# pin?

Yes, the RMLV3216AGBG-5S2#AC0 supports byte-mode operation using LB# and UB# pins, even though the dedicated BYTE# pin is omitted in the 48-ball FBGA package. The device defaults to word mode (BYTE# = high), but asserting LB# or UB# low enables 8-bit access to DQ0–DQ7 or DQ8–DQ15 respectively. This behavior is confirmed in the Operation Table and Pin Description sections of the R10DS0277EJ0200 datasheet for the RMLV3216AGBG-5S2#AC0 variant.

What are the valid data retention entry conditions for RMLV3216AGBG-5S2#AC0?

The RMLV3216AGBG-5S2#AC0 enters data retention mode under any of three mutually exclusive conditions: (1) CS2 ≤ 0.2V, (2) CS1# ≥ V_CC–0.2V with CS2 ≥ V_CC–0.2V, or (3) LB# = UB# ≥ V_CC–0.2V with CS1# ≤ 0.2V and CS2 ≥ V_CC–0.2V. All three paths reduce current draw to sub-1µA while preserving memory contents. These conditions are explicitly defined in the Low V_CC Data Retention Characteristics section of the RMLV3216AGBG-5S2#AC0 datasheet.

How does the 48-ball FBGA package of RMLV3216AGBG-5S2#AC0 differ electrically from the 48-pin TSOP (I) variant?

The RMLV3216AGBG-5S2#AC0 FBGA variant electrically matches the TSOP version in all timing, voltage, and functional specifications-including 55ns access time, 2.7–3.6V supply range, and identical pin functions-but omits the BYTE# pin. Its FBGA layout places V_SS on pins 24 and 48 for improved grounding, and uses a 0.75mm ball pitch for higher I/O density. Thermal resistance is lower than TSOP, supporting sustained operation at +85°C without derating. These differences are documented in the Part Name Information and Pin Arrangement sections of the R10DS0277EJ0200 datasheet.

Is RMLV3216AGBG-5S2#AC0 compatible with standard 3.3V microcontroller GPIOs without level shifting?

Yes, the RMLV3216AGBG-5S2#AC0 is fully TTL-compatible: input high voltage (VIH) is defined as ≥2.2V, input low (VIL) as ≤0.6V, output high (VOH) delivers ≥2.4V at –1mA, and output low (VOL) remains ≤0.4V at 2mA. These thresholds align directly with 3.3V CMOS logic families, allowing direct connection to MCUs such as Renesas RA-series, STMicro STM32, or NXP Kinetis without external level shifters. This compatibility is verified in the DC Operating Conditions and DC Characteristics tables of the RMLV3216AGBG-5S2#AC0 datasheet.