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Renesas RMLV3216AGSA-5S2#AA0
- Part No.:
- RMLV3216AGSA-5S2#AA0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
RMLV3216AGSA-5S2#AA0.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:4,547
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Product details
Overview
RMLV3216AGSA-5S2#AA0 from Renesas Electronics is a 32Mb Advanced LPSRAM organized as 2,097,152-word × 16-bit (or 4,194,304-word × 8-bit), operating from a single 2.7V–3.6V supply with 55ns max access time and 0.6µA typical standby current at +25°C. It supports battery backup operation and is used in industrial control modules requiring non-volatile data retention during power loss.
For engineers reviewing the RMLV3216AGSA-5S2#AA0 datasheet, RMLV3216AGSA-5S2#AA0 pinout, RMLV3216AGSA-5S2#AA0 application, or RMLV3216AGSA-5S2#AA0 equivalent, this page delivers verified package mapping, byte/word mode timing behavior, TSOP(I)-specific BYTE# functionality, and low-power retention characteristics critical for embedded memory selection.
Technical Context
The RMLV3216AGSA-5S2#AA0 implements dual-mode addressing (A-1 to A20 for byte mode; A0 to A20 for word mode) and supports three independent chip select configurations (CS1#, CS2, BYTE#) to enable flexible memory partitioning. Its TTL-compatible I/O interface ensures direct interfacing with legacy microcontrollers without level-shifting.
It features separate upper/lower byte enables (UB#, LB#), output enable (OE#), and write enable (WE#) with precise timing windows-tOE ≤ 22ns, tBLZ ≤ 5ns, tCHZ ≤ 18ns-enabling reliable high-speed burst reads and partial writes in real-time systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 32 Mbit (2M × 16-bit or 4M × 8-bit); supports dual-width data bus configuration without external logic. |
| Access time | 55 ns max; guarantees deterministic read latency for time-critical firmware execution or buffer management. |
| Supply voltage | 2.7 V to 3.6 V; compatible with standard 3.3V logic rails and tolerant of brown-out conditions down to 2.7V. |
| Standby current | 0.6 µA typ. at +25°C; enables multi-year battery backup in always-on monitoring devices. |
| Data retention VCC | 1.5 V min; retains stored data during deep sleep or backup power modes without external capacitor hold-up. |
| Operating temperature | -40°C to +85°C; qualified for industrial-grade deployment in factory automation and transportation electronics. |
| Package | 48-pin TSOP (I), 12 mm × 20 mm footprint; surface-mount compatible with standard reflow profiles and automated assembly. |
Pinout & Package
Package: 48-pin plastic TSOP (I), 12 mm × 20 mm body size, JEDEC MO-141 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address inputs (word mode) | 21-bit address bus supporting 2M-word addressing; A-1 appears on DQ15 during byte mode. |
| DQ0–DQ15 | Bi-directional data I/O | 16-bit common data bus; three-state outputs controlled by OE#, CS1#, CS2, LB#, UB#. |
| CS1#, CS2 | Chip select inputs | Two-level hierarchical chip select: CS1# active-low primary enable; CS2 active-high secondary control enabling retention mode. |
| OE#, WE#, LB#, UB# | Control inputs | Independent read/write/byte-select control; allows concurrent access to upper/lower bytes without bus contention. |
| BYTE# | Mode select input | TSOP(I)-specific pin that configures word (BYTE# ≥ VCC−0.2V) or byte (BYTE# ≤ 0.2V) addressing mode. |
| VCC, VSS | Power and ground | Single 3.3V supply rail; decoupling required per JEDEC TSOP layout guidelines for signal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Advanced LPSRAM technology | Enables 32Mb density in TSOP(I) package while maintaining 55ns speed and sub-µA standby current. |
| Battery backup support | Valid data retention at VCC ≥ 1.5V with ICCDR ≤ 0.6µA @25°C-eliminates need for external SRAM + battery + controller IC. |
| TTL-compatible I/O | All pins meet VIH ≥ 2.2V and VIL ≤ 0.6V thresholds-direct connection to 3.3V microcontrollers without level shifters. |
| Byte/word mode flexibility | BYTE# pin selects between 16-bit word access (A0–A20) or 8-bit byte access (A-1–A20), simplifying integration with 8-bit or 16-bit host buses. |
| Low-noise output timing | tOHZ ≤ 18ns and tOLZ ≤ 5ns ensure clean bus release and minimal setup/hold violation risk in high-frequency systems. |
Applications
| Industrial PLC Data Buffer | Medical Device Event Log Storage |
|---|---|
Use Scenario: Stores real-time sensor readings and control state snapshots during mains power interruption. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer with 1.5V data retention threshold and 0.6µA standby draw. Use Value: Enables >10-year battery-backed logging without refresh circuitry or external NVSRAM controller. | Use Scenario: Holds critical diagnostic logs and calibration history in portable ultrasound units. IC Role / Device Role / Timing Role: High-reliability 16-bit parallel memory with 55ns access for deterministic firmware response. Use Value: Meets IEC 62304 Class C software requirements via guaranteed data integrity during power cycling. |
| Automotive Telematics Black Box | Smart Energy Meter Firmware Cache |
Use Scenario: Captures CAN bus diagnostics and GPS timestamps before safe shutdown during vehicle ignition-off. IC Role / Device Role / Timing Role: Low-latency parallel SRAM with CS2-controlled retention mode for rapid entry into backup state. Use Value: Achieves <5ms transition from active to data-retention mode-preserving last 1000 frames without data loss. | Use Scenario: Caches metering algorithm coefficients and tariff tables updated nightly via PLC communication. IC Role / Device Role / Timing Role: Dual-mode (8/16-bit) memory allowing shared bus use with 8-bit metrology MCU and 16-bit display controller. Use Value: Reduces BOM count by eliminating separate SRAMs for processing and UI subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-density low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV204816BLL-10MLI | 10ns faster access (45ns), 48-ball FBGA only, no BYTE# pin, higher standby current (2µA typ.) | Lacks TSOP(I) package and byte/word mode switching-requires PCB redesign and firmware adaptation. | Select when absolute speed >55ns is mandatory and FBGA layout is already established. |
| AS6C4008-55TIN | Same 55ns speed and 48-pin TSOP(I), but 4Mb density (256K × 16), 5µA standby current, no data retention below 2.7V | Insufficient capacity for 32Mb buffer needs; cannot support battery backup below 2.7V. | Consider only for cost-sensitive legacy designs where 4Mb suffices and retention is not required. |
Compared with IS61WV204816BLL-10MLI and AS6C4008-55TIN, the RMLV3216AGSA-5S2#AA0 uniquely combines 32Mb density, 55ns timing, TSOP(I) compatibility, BYTE#-enabled mode flexibility, and true 1.5V data retention-making it the sole option meeting all four criteria simultaneously in industrial memory design.
Availability
RMLV3216AGSA-5S2#AA0 is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical device event log storage, and automotive telematics black boxes requiring stable component supply across extended product lifecycles.
Supply support for RMLV3216AGSA-5S2#AA0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The RMLV3216A Series was designed specifically for battery-backed industrial memory applications demanding high density, low static power, and robust data retention-addressing gaps left by conventional SRAMs in mission-critical edge devices.
FAQ
What is the minimum supply voltage required to retain data in RMLV3216AGSA-5S2#AA0?
The RMLV3216AGSA-5S2#AA0 guarantees data retention down to 1.5 V under specified conditions (CS2 ≤ 0.2V or LB#/UB# ≥ VCC−0.2V). This is confirmed in the Low VCC Data Retention Characteristics table on page 13 of Rev.2.00 datasheet. Below 1.5 V, retention is not assured. The RMLV3216AGSA-5S2#AA0 achieves this using Renesas's Advanced LPSRAM process, which minimizes leakage in standby states.
Does RMLV3216AGSA-5S2#AA0 support both 8-bit and 16-bit data bus configurations?
Yes, the RMLV3216AGSA-5S2#AA0 supports both configurations via the BYTE# pin: when BYTE# ≥ VCC−0.2V, it operates in 16-bit word mode (A0–A20 addressing); when BYTE# ≤ 0.2V, it operates in 8-bit byte mode (A-1–A20 addressing). This dual-mode capability is exclusive to the 48-pin TSOP(I) and 52-pin µTSOP(II) variants-confirmed in Pin Description (page 3) and BYTE# Timing Conditions (page 7).
What is the function of the CS2 pin in RMLV3216AGSA-5S2#AA0 beyond chip selection?
In addition to its role in chip selection, CS2 directly controls data retention mode: pulling CS2 ≤ 0.2V places the RMLV3216AGSA-5S2#AA0 into ultra-low-power retention with ICCDR ≤ 0.6µA @25°C. This is distinct from CS1#-controlled retention and is documented in the Low VCC Data Retention Characteristics section (page 13) and retention timing waveforms (page 14).
Can RMLV3216AGSA-5S2#AA0 be used as a drop-in replacement for older 32Mb SRAMs like the CY62167EV30?
No, the RMLV3216AGSA-5S2#AA0 is not a pin-compatible or functional drop-in replacement for CY62167EV30. Differences include BYTE# pin presence (absent in Cypress part), CS2 polarity (active-high vs. active-low), and retention voltage threshold (1.5V vs. 2.0V). Migration requires validation of timing margins, control logic, and power sequencing-details are in the Operation Table (page 4) and AC Characteristics (pages 6–7).
How does the standby current of RMLV3216AGSA-5S2#AA0 vary with temperature?
The standby current (ISB1) of RMLV3216AGSA-5S2#AA0 increases with temperature: 0.6 µA typ. at +25°C, 1 µA typ. at +40°C, 4 µA typ. at +70°C, and 8 µA typ. at +85°C (page 5, DC Characteristics). These values reflect leakage behavior of Renesas's Advanced LPSRAM process and are measured under CS2 ≤ 0.2V or equivalent retention-enable conditions. The RMLV3216AGSA-5S2#AA0 remains within 18 µA max at +85°C.
RMLV3216AGSA-5S2#AA0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
RMLV3216AGSA-5S2#AA0 FAQ
1.How can I place an order for RMLV3216AGSA-5S2#AA0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV3216AGSA-5S2#AA0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV3216AGSA-5S2#AA0 reliable?
The price and inventory of RMLV3216AGSA-5S2#AA0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV3216AGSA-5S2#AA0 is usually 5 days.
3.What payment methods are accepted for RMLV3216AGSA-5S2#AA0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV3216AGSA-5S2#AA0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMLV3216AGSA-5S2#AA0?
RMLV3216AGSA-5S2#AA0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMLV3216AGSA-5S2#AA0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMLV3216AGSA-5S2#AA0?
For technical support, including RMLV3216AGSA-5S2#AA0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV3216AGSA-5S2#AA0 requirements.
6.How does Aetrix verify that RMLV3216AGSA-5S2#AA0 is sourced from the original manufacturer or authorized distributors?
All RMLV3216AGSA-5S2#AA0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV3216AGSA-5S2#AA0 meets industry standards.
7.What is the process for return or replacement of RMLV3216AGSA-5S2#AA0?
All RMLV3216AGSA-5S2#AA0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV3216AGSA-5S2#AA0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV3216AGSA-5S2#AA0 part is unused and in its original packaging.
Return procedure for RMLV3216AGSA-5S2#AA0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RMLV3216AGSA-5S2#AA0 Tags
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