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Renesas RMLV3216AGSD-5S2#AA0
- Part No.:
- RMLV3216AGSD-5S2#AA0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 52-TFSOP (0.350", 8.89mm Width)
- Datasheet:
-
RMLV3216AGSD-5S2#AA0.pdf
- Description:
- IC SRAM 32MBIT PAR 52TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:666
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Product details
Overview
RMLV3216AGSD-5S2 from Renesas Electronics is a 32Mb Advanced LPSRAM organized as 2,097,152-word × 16-bit or 4,194,304-word × 8-bit, operating from a single 2.7–3.6V supply with 55ns max access time and 0.6µA typical standby current at +25°C. It supports byte/word mode selection via BYTE# pin and is designed for low-power battery-backed memory applications in industrial control and portable instrumentation.
For engineers reviewing the RMLV3216AGSD-5S2 datasheet, RMLV3216AGSD-5S2 pinout, RMLV3216AGSD-5S2 application, or RMLV3216AGSD-5S2 equivalent, key selection criteria include µTSOP (II) package compatibility, dual-mode address/data bus operation, CS1#/CS2# dual-chip-select architecture, and verified data retention down to 1.5V VCC.
Technical Context
This SRAM implements a dual-bank address decoder supporting both word (A0–A20) and byte (A−1–A20) addressing modes, with independent upper/lower byte enable (UB#/LB#) and three-state output control via OE#. The BYTE# pin configures interface behavior-high for 16-bit word mode, low for 8-bit byte mode-and is active only on TSOP (I) and µTSOP (II) packages.
It features two chip select inputs (CS1#, CS2) enabling hierarchical memory mapping: CS1# acts as primary enable while CS2 controls internal buffers and determines data retention entry conditions. Standby power is minimized through dynamic gate biasing, achieving 0.6µA typical ISB1 at +25°C and maintaining data integrity at VCC ≥ 1.5V with no external refresh required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 32 Mbit (2M × 16-bit or 4M × 8-bit), enabling compact code/data storage without external multiplexing |
| Access time | 55 ns max - guarantees deterministic read latency for real-time control loops |
| Supply voltage | 2.7–3.6 V - compatible with standard 3V logic rails and battery-backed systems |
| Standby current | 0.6 µA typ. at +25°C - extends battery life in always-on backup mode |
| Data retention VCC | 1.5 V min - retains contents during brown-out or backup battery operation |
| Operating temperature | −40°C to +85°C - qualified for industrial ambient environments |
| Package | 52-pin µTSOP (II), 10.79 mm × 10.49 mm - surface-mount compatible with high-density PCB layouts |
Pinout & Package
Package: 52-pin plastic µTSOP (II), 10.79 mm × 10.49 mm footprint, JEDEC MO-217 compliant, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address input (word mode) | 21-bit address bus for 2M-word addressing; A−1 used only in byte mode |
| DQ0–DQ15 | Data input/output | Bidirectional 16-bit data bus with three-state output control via OE# |
| CS1#, CS2 | Chip select inputs | CS1# primary enable; CS2 enables internal buffers and triggers data retention when low |
| OE#, WE#, LB#, UB# | Control signals | OE# gates output drivers; WE# initiates write; LB#/UB# select byte lanes independently |
| BYTE# | Mode configuration | Selects 16-bit word mode (BYTE# = VIH) or 8-bit byte mode (BYTE# = VIL); present only on TSOP/µTSOP |
| VCC, VSS | Power terminals | Single 3V supply rail and ground; decoupling required per high-speed SRAM layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Low-voltage data retention | Maintains stored data at VCC ≥ 1.5V, eliminating need for external backup power circuitry |
| Dual chip-select architecture | CS1# and CS2# allow hierarchical memory banking and seamless integration into multi-SRAM systems |
| Byte/word mode flexibility | BYTE# pin enables runtime reconfiguration between 8-bit and 16-bit data bus widths |
| TTL-compatible I/O | All inputs and outputs meet TTL voltage thresholds, simplifying interface with legacy microcontrollers |
| Ultra-low standby current | 0.6 µA typical at +25°C ensures >10-year battery life in backup applications |
Applications
| Industrial PLC Data Buffer | Portable Medical Instrument Memory |
|---|---|
Use Scenario: Real-time logging of sensor readings and control state in programmable logic controllers with intermittent power loss. IC Role / Device Role / Timing Role: Non-refreshing static RAM providing deterministic 55ns read/write access and guaranteed data retention during brown-out events. Use Value: Eliminates need for external battery management ICs by retaining data at 1.5V VCC, reducing BOM count and board space. | Use Scenario: Storing calibration coefficients and patient session history in handheld ECG or glucose monitors powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-power SRAM serving as persistent scratchpad memory with direct connection to 8/16-bit MCU data buses. Use Value: 0.6µA standby current extends battery service life beyond 5 years without replacement or recharge. |
| Automotive Telematics Event Log | Smart Meter Firmware Cache |
Use Scenario: Capturing GPS position, CAN bus diagnostics, and crash-triggered event snapshots in vehicle telematics units. IC Role / Device Role / Timing Role: High-reliability SRAM interfaced via CS1#/CS2# to isolate memory banks during firmware updates or fault recovery. Use Value: −40°C to +85°C rating and 52-pin µTSOP package ensure mechanical robustness and thermal stability under hood conditions. | Use Scenario: Caching metering firmware patches and tariff tables in utility smart meters deployed in uncontrolled outdoor environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM supporting byte-mode writes for efficient firmware update operations over narrowband PLC links. Use Value: LB#/UB# independent control enables partial writes without disturbing adjacent memory regions, improving update reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV204816BLL-10MLI | 10ns faster access (45ns), 48-pin TSOP-I, no BYTE# pin, higher standby current (2µA typ.) | Lacks byte/word mode flexibility; requires fixed 16-bit bus interface | Choose when speed >55ns is mandatory and system design locks to 16-bit data path |
| AS6C4008-55ZIN | Same 55ns access, 44-pin SOJ, no CS2 pin, no data retention below 2.0V | Missing dual-CS architecture and low-VCC retention capability | Prefer for cost-sensitive consumer designs where extended battery backup is not required |
Compared with IS61WV204816BLL-10MLI and AS6C4008-55ZIN, the RMLV3216AGSD-5S2 uniquely combines µTSOP (II) packaging, BYTE#-enabled bus flexibility, and sub-2V data retention-making it the only option among the three qualified for long-term battery-backed industrial logging.
Availability
RMLV3216AGSD-5S2 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical instrument memory, automotive telematics event logging, and smart meter firmware caching requiring stable component supply across extended product lifecycles.
Supply support for RMLV3216AGSD-5S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The RMLV3216A Series was developed to address demand for ultra-low-power, high-reliability static RAM in battery-critical industrial and portable systems-emphasizing data retention, wide temperature operation, and flexible bus interfacing.
FAQ
What is the maximum access time specification for RMLV3216AGSD-5S2?
The RMLV3216AGSD-5S2 has a maximum access time of 55 ns under all operating conditions (VCC = 2.7–3.6 V, TA = −40°C to +85°C). This value is measured as address access time (tAA) and applies to both word and byte modes. The parameter is production-tested and guaranteed per the R10DS0277EJ0200 Rev.2.00 datasheet, page 6.
Does RMLV3216AGSD-5S2 support true 8-bit operation?
Yes, RMLV3216AGSD-5S2 supports true 8-bit operation via BYTE# pin assertion (BYTE# = VIL), which configures the device to interpret A−1–A20 as the 22-bit address bus for 4M × 8-bit organization. In this mode, DQ0–DQ7 become active while DQ8–DQ15 are disabled unless UB# is asserted separately.
What is the minimum VCC required to retain data in RMLV3216AGSD-5S2?
The RMLV3216AGSD-5S2 guarantees data retention down to VCC = 1.5 V, provided one of three entry conditions is met: CS2 ≤ 0.2 V, CS1# ≥ VCC−0.2 V with CS2 ≥ VCC−0.2 V, or LB# = UB# ≥ VCC−0.2 V with CS1# ≤ 0.2 V. This is specified in the Low VCC Data Retention Characteristics table (page 13).
Is RMLV3216AGSD-5S2 pin-compatible with other members of the RMLV3216A Series?
No, RMLV3216AGSD-5S2 is not pin-compatible with RMLV3216AGSA-5S2 (48-pin TSOP-I) or RMLV3216AGBG-5S2 (48-ball FBGA). Its 52-pin µTSOP (II) footprint has distinct pin count, spacing, and signal assignment-including dedicated NC pins and relocated control signals-as shown in the Pin Arrangement diagram (page 2).
How does the dual chip-select architecture (CS1# and CS2#) function in RMLV3216AGSD-5S2?
In RMLV3216AGSD-5S2, CS1# serves as the primary chip enable, while CS2# controls internal buffer activation and determines data retention entry. When CS2# is low, the device enters standby with minimal current draw; when CS2# is high and CS1# is low, full read/write operation is enabled. This separation allows hierarchical memory mapping and precise power-state control.
RMLV3216AGSD-5S2#AA0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 52-TFSOP (0.350", 8.89mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 52-TSOP II
RMLV3216AGSD-5S2#AA0 FAQ
1.How can I place an order for RMLV3216AGSD-5S2#AA0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMLV3216AGSD-5S2#AA0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMLV3216AGSD-5S2#AA0 reliable?
The price and inventory of RMLV3216AGSD-5S2#AA0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMLV3216AGSD-5S2#AA0 is usually 5 days.
3.What payment methods are accepted for RMLV3216AGSD-5S2#AA0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMLV3216AGSD-5S2#AA0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMLV3216AGSD-5S2#AA0?
RMLV3216AGSD-5S2#AA0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMLV3216AGSD-5S2#AA0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMLV3216AGSD-5S2#AA0?
For technical support, including RMLV3216AGSD-5S2#AA0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMLV3216AGSD-5S2#AA0 requirements.
6.How does Aetrix verify that RMLV3216AGSD-5S2#AA0 is sourced from the original manufacturer or authorized distributors?
All RMLV3216AGSD-5S2#AA0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMLV3216AGSD-5S2#AA0 meets industry standards.
7.What is the process for return or replacement of RMLV3216AGSD-5S2#AA0?
All RMLV3216AGSD-5S2#AA0 units undergo pre-shipment inspection (PSI). If there is an issue with RMLV3216AGSD-5S2#AA0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMLV3216AGSD-5S2#AA0 part is unused and in its original packaging.
Return procedure for RMLV3216AGSD-5S2#AA0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RMLV3216AGSD-5S2#AA0 Tags
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M24C02-WMN6TP
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