Renesas RMLV3216AGSD-5S2#HA0

Overview

RMLV3216AGSD-5S2 from Renesas Electronics is a 32Mb Advanced LPSRAM organized as 2,097,152-word × 16-bit (or 4,194,304-word × 8-bit), operating from a single 2.7–3.6V supply with 55ns max access time and 0.6µA typical standby current at +25°C. It supports byte/word mode operation via LB#/UB#/BYTE# control and is designed for low-power battery-backed memory applications in industrial and embedded systems.

For engineers reviewing the RMLV3216AGSD-5S2 datasheet, RMLV3216AGSD-5S2 pinout, RMLV3216AGSD-5S2 application, or RMLV3216AGSD-5S2 equivalent, key selection criteria include µTSOP (II) package compatibility, 52-pin footprint, TTL-level I/O compatibility, low-voltage data retention down to 1.5V, and dual chip-select architecture enabling multi-bank memory expansion.

Technical Context

The RMLV3216AGSD-5S2 implements a dual-select static RAM architecture with independent CS1# and CS2 inputs, where CS2 enables address/data buffers and controls entry into data retention mode. Its BYTE# pin-present only in TSOP (I) and µTSOP (II) variants-configures word/byte addressing modes, while LB# and UB# enable selective 8-bit writes without affecting adjacent bytes.

It features three-state bidirectional DQ0–DQ15 I/Os with 2mA drive strength, 10pF input/output capacitance, and timing-critical parameters including tOE ≤ 22ns, tCLZ1 ≤ 10ns, and tCHZ1 ≤ 18ns, ensuring reliable interfacing with microcontrollers and ASICs operating at up to 18MHz read/write cycles.

Key Specifications

Pinout & Package

Package: 52-pin plastic µTSOP (II), dimensions 10.79 mm × 10.49 mm, pitch 0.5 mm, JEDEC MO-218AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-density low-power SRAM applications.

Compared with IS61WV204816BLL-10MLI and AS6C4008-55ZIN, the RMLV3216AGSD-5S2 uniquely delivers µTSOP (II) packaging, hardware-configurable BYTE# for true byte/word mode, and verified 1.5V data retention-making it optimal for battery-constrained, space-limited, and retention-critical embedded systems.

Availability

RMLV3216AGSD-5S2 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device configuration storage, automotive telematics logging, and network edge router metadata caching requiring stable component supply across extended product lifecycles.

Supply support for RMLV3216AGSD-5S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The RMLV3216A Series was developed to deliver high-density, low-leakage SRAM for battery-backed applications where long-term data retention and minimal standby power are critical system requirements.

FAQ

What is the maximum operating frequency supported by the RMLV3216AGSD-5S2?

The RMLV3216AGSD-5S2 has a 55ns maximum access time, corresponding to a theoretical maximum bus clock frequency of approximately 18.2 MHz for read cycles. This assumes proper setup/hold timing margins and meets tRC = 55ns minimum cycle time under worst-case voltage (2.7V) and temperature (+85°C) conditions. The RMLV3216AGSD-5S2 does not include an internal clock generator; timing is fully asynchronous and controlled by external host signals.

Does the RMLV3216AGSD-5S2 support true byte-write operations without affecting adjacent bytes?

Yes, the RMLV3216AGSD-5S2 supports independent lower-byte (LB#) and upper-byte (UB#) writes. When BYTE# is asserted low (byte mode), asserting LB# alone writes only DQ0–DQ7 while leaving DQ8–DQ15 unchanged, and asserting UB# alone writes only DQ8–DQ15. This functionality is confirmed in the Operation Table on page 4 of the R10DS0277EJ0200 datasheet and applies specifically to the RMLV3216AGSD-5S2 µTSOP (II) variant.

What is the minimum supply voltage at which the RMLV3216AGSD-5S2 retains stored data?

The RMLV3216AGSD-5S2 guarantees data retention down to 1.5V, as specified in the Low VCC Data Retention Characteristics table (page 13). At this voltage, data is retained with ICCDR ≤ 8 µA at +85°C when entering retention mode via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V, or LB#/UB# ≥ VCC−0.2V. This specification is validated for the RMLV3216AGSD-5S2 and is not extrapolated from other variants.

Is the RMLV3216AGSD-5S2 pin-compatible with other members of the RMLV3216A Series?

No, the RMLV3216AGSD-5S2 is not pin-compatible with the 48-pin TSOP (I) or 48-ball FBGA variants. It uses a 52-pin µTSOP (II) footprint with distinct pin arrangement (e.g., NC pins at positions 25, 44, 45, 46, 51, 52), different CS2 polarity behavior, and inclusion of the BYTE# pin-features absent in the FBGA version and assigned to different pins in TSOP (I). Pin compatibility must be verified per package-specific diagrams in the R10DS0277EJ0200 datasheet.

How does the dual chip-select architecture (CS1# and CS2) improve power management in the RMLV3216AGSD-5S2?

The CS2 input in the RMLV3216AGSD-5S2 gates internal address, data, and control buffers. When CS2 is deasserted (low), all buffers enter high-impedance and leakage is minimized-even if CS1# remains active-enabling selective power-down of unused memory banks. This architecture reduces dynamic and standby current beyond what single-CS SRAMs achieve, and is explicitly documented in the Absolute Maximum Ratings and DC Characteristics sections of the R10DS0277EJ0200 datasheet for the RMLV3216AGSD-5S2.