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Renesas RMWV3216AGBG-5S2#AC0

Part No.:
RMWV3216AGBG-5S2#AC0
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixRMWV3216AGBG-5S2#AC0.pdf
Description:
IC SRAM 32MBIT PARALLEL 48TFBGA
Quantity:
Payment:
Payment
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Shipping

Inventory:997

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Product details

Overview

RMWV3216AGBG-5S2#AC0 from Renesas Electronics is a 32Mb Advanced LPSRAM organized as 2,097,152-word × 16-bit, fabricated using high-performance low-power SRAM technology. It operates from a single 3V supply (2.7–3.6V), delivers 55ns max access time, consumes only 1.0µA typical standby current, and supports battery backup operation in industrial temperature range (−40°C to +85°C). It serves as main working memory in portable instrumentation and real-time control systems requiring non-volatile data retention during power loss.

For engineers reviewing the RMWV3216AGBG-5S2#AC0 datasheet, RMWV3216AGBG-5S2#AC0 pinout, RMWV3216AGBG-5S2#AC0 application, or RMWV3216AGBG-5S2#AC0 equivalent, this page provides verified package mapping (48-ball FBGA, 0.75mm pitch), byte-selectable 16-bit I/O architecture, TTL-compatible interface timing, low-voltage data retention down to 1.5V, and confirmed alternatives for memory subsystem redesign.

Technical Context

The RMWV3216AGBG-5S2#AC0 implements dual chip select logic (CS1# active-low, CS2 active-high) with independent byte enable (LB#/UB#) for 8-bit sub-word access. Its read/write cycle timing is fully compliant with standard asynchronous SRAM protocols, supporting tRC = 55ns, tAA = 55ns, and tWP = 35ns under full voltage/temperature range.

It features three-state bidirectional DQ0–DQ15 bus with output enable (OE#) control, direct TTL-level compatibility on all pins, and multiple data retention entry modes-via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V, or LB#/UB# ≥ VCC−0.2V-enabling flexible low-power system wake-up strategies.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density32 Mbit (2,097,152 × 16-bit) - supports 64KB word-aligned buffer storage without external banking logic
Access time55 ns max - enables direct interfacing with legacy microcontrollers running at ≤18 MHz bus clock
Supply voltage2.7 V to 3.6 V - compatible with Li-ion battery-powered systems and 3.3V FPGA I/O banks
Standby current1.0 µA typ. at +25°C - extends battery life to years in always-on sensor nodes
Data retention VCC1.5 V min - maintains RAM contents during brown-out or backup battery switchover
Operating temperature−40°C to +85°C - qualified for industrial control, automotive body electronics, and outdoor telemetry
Package48-ball FBGA, 0.75 mm pitch - compact footprint (7.0 × 8.0 mm) suitable for space-constrained PCB layouts

Pinout & Package

RMWV3216AGBG-5S2#AC0 uses a 48-ball fine-pitch ball grid array (FBGA) package with 0.75 mm ball pitch and 7.0 mm × 8.0 mm body size. Pin assignments follow JEDEC-standard top-view layout with VCC/VSS distributed across corners and center rows for optimal power integrity.

Pin/Terminal Circuit Role Design Meaning
VCCPower supplyPrimary 2.7–3.6V core and I/O supply; requires local 100nF + 4.7µF decoupling
VSSGroundDigital ground reference; multiple balls ensure low-impedance return path for DQ switching
A0–A20Address input21-bit address bus supporting full 2M-word decoding; no internal address latching
DQ0–DQ15Data I/OBidirectional 16-bit data bus with three-state control via OE#, LB#, UB#
CS1#Chip select 1Active-low primary chip select; must be low with CS2 high for valid read/write cycles
CS2Chip select 2Active-high secondary chip select; controls address/data buffers and enables data retention mode
OE#Output enableActive-low control for DQ bus direction; high-Z when asserted during write or standby
WE#Write enableActive-low write strobe; sampled synchronously with CS1#/CS2 to initiate write sequence
LB# / UB#Byte selectIndependent active-low enables for lower (DQ0–DQ7) and upper (DQ8–DQ15) bytes
NCNo connectionUnbonded pad; must be left floating or tied to VSS per PCB design rules

Key Features

Feature Design Value
Single-supply 3V operationEliminates need for separate core/I/O voltage rails; simplifies power sequencing in battery-backed systems
1.0 µA typical standby currentReduces quiescent power to <1 µW at 3V, enabling multi-year operation on coin-cell batteries
Three-state DQ bus with OE#/LB#/UB#Enables seamless integration into shared 16-bit data buses without external bus transceivers
Multiple data retention entry modesSupports system-level power management via CS2 low, CS1# high, or LB#/UB# high - no firmware dependency
TTL-compatible inputs/outputsDirect interface with legacy 3.3V microcontrollers and FPGAs without level-shifting circuitry
48-ball FBGA packageEnables high-density routing with reduced trace inductance versus TSOP packages; supports automated optical inspection

Applications

Industrial Data Logger Medical Patient Monitor

Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂, temperature) with periodic flash offload and power-loss resilience.

IC Role / Device Role / Timing Role: Primary working RAM holding real-time waveform buffers and configuration state between power cycles.

Use Value: 1.5V data retention ensures no loss of critical patient history during AC failure or battery swap.

Use Scenario: Portable diagnostic device requiring fast waveform rendering, alarm-triggered event capture, and regulatory-compliant data persistence.

IC Role / Device Role / Timing Role: High-speed scratchpad memory for display frame buffers and real-time signal processing pipelines.

Use Value: 55ns access time sustains >18 MHz CPU bus throughput while 1.0µA standby preserves battery charge during standby intervals.

Automotive Body Control Module Smart Utility Meter

Use Scenario: Centralized vehicle subsystem managing door locks, lighting, and HVAC with EEPROM wear leveling and crash-data logging.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM storing last-known actuator states and fault codes prior to safe shutdown.

Use Value: Dual CS control allows hardware-triggered retention entry during ignition-off transition without MCU intervention.

Use Scenario: AMI meter performing hourly consumption sampling, tariff switching, and tamper-event logging under intermittent solar/battery power.

IC Role / Device Role / Timing Role: Low-power buffer memory accumulating interval data before secure transmission to concentrator.

Use Value: 0.75mm-pitch FBGA minimizes PCB area in sealed meter housing while −40°C to +85°C rating ensures field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61WV204816BLL-10MLI10ns faster access (45ns max); 3.3V only (3.135–3.465V); 48-pin TSOP-II packageRequires board redesign due to TSOP-II footprint and tighter VCC tolerance; better for high-speed MCU interfacesSelect when system clock exceeds 22 MHz and PCB layout permits TSOP-II height clearance
AS6C4008-55ZINSame 55ns speed and 32Mb density; 3.3V supply (3.0–3.6V); 44-pin SOP packageLarger SOP footprint; lacks LB#/UB# byte control and multi-mode retention; simpler control logicChoose for cost-sensitive industrial controllers where byte-select granularity is unnecessary

Compared with IS61WV204816BLL-10MLI and AS6C4008-55ZIN, the RMWV3216AGBG-5S2#AC0 uniquely combines FBGA miniaturization, multi-mode data retention, and true 2.7–3.6V operation-making it optimal for space-constrained, battery-backed embedded systems requiring guaranteed data integrity across voltage brownouts.

Availability

RMWV3216AGBG-5S2#AC0 is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, and automotive body control modules requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for RMWV3216AGBG-5S2#AC0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.

The RMWV3216AGBG-5S2#AC0 belongs to Renesas' Advanced LPSRAM product line, engineered specifically for ultra-low-power, battery-backed memory applications demanding high reliability and extended data retention at reduced supply voltages.

FAQ

What is the minimum VCC required to retain data in RMWV3216AGBG-5S2#AC0?

The RMWV3216AGBG-5S2#AC0 guarantees data retention down to 1.5 V VCC when entering retention mode via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V, or LB#/UB# ≥ VCC−0.2V. This specification is validated across the full −40°C to +85°C operating range and enables robust operation during brown-out conditions without external supervision circuits.

Does RMWV3216AGBG-5S2#AC0 support byte-wide writes without affecting adjacent bytes?

Yes, RMWV3216AGBG-5S2#AC0 supports independent lower-byte (DQ0–DQ7) and upper-byte (DQ8–DQ15) writes using LB# and UB# control signals. When only LB# is asserted low (UB# high), only DQ0–DQ7 are written; when only UB# is low, only DQ8–DQ15 are updated - preserving data in the unselected byte.

What is the maximum operating frequency supported by RMWV3216AGBG-5S2#AC0?

The RMWV3216AGBG-5S2#AC0 does not operate with a clock signal; it is an asynchronous SRAM. Its performance is defined by access timing parameters: maximum read cycle time (tRC) is 55 ns, corresponding to an effective maximum bus rate of approximately 18.2 MHz for consecutive random accesses. No external clock is required or supported.

Can RMWV3216AGBG-5S2#AC0 be used with 3.3V FPGA I/O banks without level shifters?

Yes, RMWV3216AGBG-5S2#AC0 is directly TTL-compatible with all inputs and outputs, and its VIH (2.2 V min) and VOL (0.4 V max) specifications meet 3.3V LVTTL thresholds. When operated within its 2.7–3.6V supply range, it interfaces seamlessly with Xilinx Artix-7 or Intel Cyclone V FPGA I/O banks configured for 3.3V LVTTL standards.

How does the dual chip select architecture (CS1# and CS2) function in RMWV3216AGBG-5S2#AC0?

In RMWV3216AGBG-5S2#AC0, valid memory operations require CS1# low AND CS2 high. CS2 also controls internal buffers and enables data retention mode when driven low - independent of CS1#. This separation allows hardware-based retention entry (e.g., via power supervisor output) without MCU involvement, enhancing system-level power management autonomy.

RMWV3216AGBG-5S2#AC0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
32Mbit
Memory Organization:
2M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TFBGA (7.5x8.5)

RMWV3216AGBG-5S2#AC0 FAQ

1.How can I place an order for RMWV3216AGBG-5S2#AC0 through Aetrix?

Please submit a Request for Quotation (RFQ) for RMWV3216AGBG-5S2#AC0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RMWV3216AGBG-5S2#AC0 reliable?

The price and inventory of RMWV3216AGBG-5S2#AC0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMWV3216AGBG-5S2#AC0 is usually 5 days.

3.What payment methods are accepted for RMWV3216AGBG-5S2#AC0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMWV3216AGBG-5S2#AC0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RMWV3216AGBG-5S2#AC0?

RMWV3216AGBG-5S2#AC0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RMWV3216AGBG-5S2#AC0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RMWV3216AGBG-5S2#AC0?

For technical support, including RMWV3216AGBG-5S2#AC0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMWV3216AGBG-5S2#AC0 requirements.

6.How does Aetrix verify that RMWV3216AGBG-5S2#AC0 is sourced from the original manufacturer or authorized distributors?

All RMWV3216AGBG-5S2#AC0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMWV3216AGBG-5S2#AC0 meets industry standards.

7.What is the process for return or replacement of RMWV3216AGBG-5S2#AC0?

All RMWV3216AGBG-5S2#AC0 units undergo pre-shipment inspection (PSI). If there is an issue with RMWV3216AGBG-5S2#AC0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RMWV3216AGBG-5S2#AC0 part is unused and in its original packaging.

Return procedure for RMWV3216AGBG-5S2#AC0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RMWV3216AGBG-5S2#AC0 Tags

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