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Renesas RMWV3216AGBG-5S2#KC0
- Part No.:
- RMWV3216AGBG-5S2#KC0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
RMWV3216AGBG-5S2#KC0.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:880
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Product details
Overview
RMWV3216AGBG-5S2#KC0 from Renesas Electronics is a 32Mb advanced low-power static RAM (2,097,152-word × 16-bit), designed for high-density, low-power memory applications requiring battery backup operation. It operates from a single 3V supply (2.7–3.6V), delivers 55ns max access time, and draws only 1.0µA typical standby current at +25°C - making it suitable for portable instrumentation and industrial control systems with extended offline data retention needs.
For engineers reviewing the RMWV3216AGBG-5S2#KC0 datasheet, RMWV3216AGBG-5S2#KC0 pinout, RMWV3216AGBG-5S2#KC0 application, or RMWV3216AGBG-5S2#KC0 equivalent, key selection criteria include its 48-ball FBGA package, byte-selectable 16-bit I/O architecture, TTL-compatible interface, and three-state output control enabling seamless integration into legacy 16-bit microcontroller bus systems without level-shifting.
Technical Context
This SRAM implements dual chip select logic (CS1# active-low, CS2 active-high) with independent upper/lower byte enable (UB#/LB#) and output enable (OE#), supporting flexible memory mapping in 16-bit data buses. Its internal architecture eliminates address setup requirements (tAS = 0 ns) and supports overlapping write cycles with 25ns data valid window (tDW).
It features three distinct data retention modes controlled by CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V, or LB#/UB# ≥ VCC−0.2V - allowing ultra-low-current retention (1.0µA typ.) down to VCC = 1.5V while maintaining full data integrity across −40°C to +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 32 Mbit (2,097,152 × 16-bit) - provides compact 4MB of byte-addressable storage in a fine-pitch BGA footprint. |
| Access time | 55 ns max - enables direct interfacing with 18 MHz synchronous bus systems without wait states. |
| Supply voltage | 2.7V to 3.6V - compatible with standard 3.3V logic rails and tolerant of brown-out conditions during battery switchover. |
| Standby current | 1.0 µA typ. at +25°C - extends battery life to years in backup mode for real-time clock or configuration memory applications. |
| Data retention VCC | 1.5V min - guarantees nonvolatile data hold during deep power-down, critical for fail-safe industrial logging. |
| Package | 48-ball FBGA, 0.75 mm pitch - supports high-density PCB layouts with thermal performance optimized for embedded enclosures. |
| I/O interface | TTL-compatible inputs/outputs - eliminates need for external level translators when interfacing with legacy microcontrollers or FPGAs. |
Pinout & Package
RMWV3216AGBG-5S2#KC0 is housed in a 48-ball fine-pitch ball grid array (FBGA) package with 0.75 mm ball pitch, optimized for thermal dissipation and board-level reliability in space-constrained industrial modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power supply | Primary 2.7–3.6V core supply rail; decoupling required within 5 mm for stable 55ns timing. |
| VSS | Ground | Dedicated ground reference for all I/O and core logic; must be connected to low-impedance PCB plane. |
| A0–A20 | Address input | 21-bit address bus supporting full 2M-word decoding; no address setup time (tAS = 0 ns) simplifies timing closure. |
| DQ0–DQ15 | Data input/output | 16-bit bidirectional data bus with three-state control; shared pins reduce pin count versus parallel flash alternatives. |
| CS1#, CS2 | Chip select | Dual active-low/high enables hierarchical memory banking and reduces bus contention in multi-SRAM systems. |
| OE#, WE# | Output/write enable | Independent control allows read-modify-write operations without bus turnaround delays. |
| LB#, UB# | Byte select | Enables 8-bit sub-word writes - essential for efficient configuration storage and partial register updates. |
| NC | No connection | Unbonded pad; must remain unconnected and unstubbed on PCB layout to prevent signal integrity issues. |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup support | Valid data retention at VCC as low as 1.5V with <1.0µA current draw - enables >10-year backup using coin-cell batteries. |
| Byte-selectable write | Independent LB#/UB# control permits 8-bit writes without disturbing adjacent bytes - reduces EEPROM wear in parameter storage. |
| Zero address setup time | tAS = 0 ns eliminates minimum address hold requirement - simplifies FPGA or ASIC controller design and improves bus efficiency. |
| Three-state output control | OE#-gated high-impedance DQ outputs allow direct connection to shared data buses without external transceivers. |
| TTL-compatible signaling | VIH = 2.2V min / VIL = 0.6V max ensures interoperability with 3.3V microcontrollers and CPLDs without level shifters. |
Applications
| Industrial PLC Data Buffer | Medical Device Configuration Memory |
|---|---|
|
Use Scenario: Stores real-time I/O state snapshots and firmware configuration parameters during mains power loss in programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile backup memory with fast 55ns read access and sub-microamp retention current. Use Value: Enables deterministic recovery within 5ms after power restoration, meeting IEC 61131-2 cycle-time requirements. |
Use Scenario: Holds calibration coefficients, patient history flags, and safety-critical device settings in portable diagnostic equipment. IC Role / Device Role / Timing Role: Battery-backed SRAM providing guaranteed data integrity during battery replacement or charging interruptions. Use Value: Eliminates need for external EEPROM wear leveling and reduces BOM cost by 32% versus serial flash + backup capacitor solutions. |
| Automotive Telematics Log Storage | Test & Measurement Instrument Buffer |
|
Use Scenario: Captures CAN bus event logs and GPS timestamps during vehicle ignition-off periods in fleet management units. IC Role / Device Role / Timing Role: Low-power static RAM operating in extended temperature range (−40°C to +85°C) with robust data retention. Use Value: Supports 100,000+ power-cycle endurance without data corruption, exceeding ISO 16750-4 cold-cranking stress requirements. |
Use Scenario: Buffers high-speed analog-to-digital conversion results in oscilloscopes and spectrum analyzers before host transfer. IC Role / Device Role / Timing Role: High-bandwidth 16-bit parallel interface SRAM enabling 18 MB/s sustained write throughput. Use Value: Reduces acquisition dead time by 40% compared to DDR2-based buffers due to zero-latency random access. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-55ZSXIT | 32Mb (2M×16), 55ns access, 48-TSOP II package; standby current 2µA typ. at +25°C - higher than RMWV3216AGBG-5S2#KC0's 1.0µA. | TSOP II footprint requires larger PCB area and offers inferior thermal performance vs. FBGA in sealed enclosures. | Select when board redesign for BGA is not feasible and 1µA standby savings are noncritical. |
| IS62WV204816BLL-55NLI | 32Mb (2M×16), 55ns access, 48-TSOP II; standby current 1.5µA typ. at +25°C; no low-VCC retention mode below 2.0V. | Lacks 1.5V data retention capability - unsuitable for deep-brownout scenarios requiring extended backup. | Choose only for cost-sensitive consumer applications where full industrial temperature range and ultra-low retention VCC are unnecessary. |
Compared with CY62167EV30LL-55ZSXIT and IS62WV204816BLL-55NLI, RMWV3216AGBG-5S2#KC0 uniquely combines 1.0µA standby current, 1.5V data retention, and 48-ball FBGA packaging - delivering superior power efficiency and board-area optimization for mission-critical industrial and medical designs.
Availability
RMWV3216AGBG-5S2#KC0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device configuration storage, and automotive telematics log retention requiring stable component supply across extended product lifecycles.
Supply support for RMWV3216AGBG-5S2#KC0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The RMWV3216A Series was developed to deliver high-density, low-power static RAMs for battery-backed applications demanding long-term data integrity and minimal standby consumption - targeting industrial control, medical instrumentation, and automotive black-box recorders.
FAQ
What is the maximum operating temperature range for RMWV3216AGBG-5S2#KC0?
The RMWV3216AGBG-5S2#KC0 is rated for continuous operation from −40°C to +85°C ambient temperature, validated per its DC and AC specifications in the R10DS0259EJ0101 datasheet. This industrial-grade temperature range ensures reliable performance in enclosed control cabinets, automotive under-hood environments, and portable medical devices without derating.
Does RMWV3216AGBG-5S2#KC0 support true 1.5V data retention, and how is it enabled?
Yes, RMWV3216AGBG-5S2#KC0 supports guaranteed data retention at VCC as low as 1.5V using any of three hardware-controlled modes: asserting CS2 ≤ 0.2V, driving CS1# ≥ VCC−0.2V, or setting LB#/UB# ≥ VCC−0.2V. Each method places the device into ultra-low-current retention state (<10µA at +85°C), preserving stored data indefinitely without external circuitry.
Can RMWV3216AGBG-5S2#KC0 be used with a 3.3V-only system without level shifting?
Yes, RMWV3216AGBG-5S2#KC0 is fully TTL-compatible: VIH is specified at 2.2V min and VIL at 0.6V max over the full 2.7–3.6V supply range. When powered at 3.3V, its inputs accept standard 3.3V CMOS logic levels, and its outputs drive VOH ≥ 2.4V at −1mA and VOL ≤ 0.4V at 2mA - eliminating need for level translators in 3.3V microcontroller or FPGA interfaces.
What is the significance of tAS = 0 ns in RMWV3216AGBG-5S2#KC0 timing?
The tAS = 0 ns specification means RMWV3216AGBG-5S2#KC0 requires no minimum setup time between address assertion and write-enable activation. This simplifies timing closure in FPGA- or ASIC-based controllers, removes constraints on address bus skew, and enables tighter write-cycle packing - particularly valuable in high-throughput data acquisition systems where every nanosecond impacts buffer efficiency.
How does the dual chip select (CS1# and CS2) architecture benefit system design with RMWV3216AGBG-5S2#KC0?
The dual chip select architecture (CS1# active-low, CS2 active-high) in RMWV3216AGBG-5S2#KC0 enables hierarchical memory decoding: CS2 can act as a bank-enable signal to gate multiple RMWV3216AGBG-5S2#KC0 devices, while CS1# selects individual chips within each bank. This reduces address decoder complexity, minimizes bus contention during partial-memory accesses, and supports scalable memory expansion up to 128MB using identical timing across all devices.
RMWV3216AGBG-5S2#KC0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 32Mbit
- Memory Organization:
- 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (7.5x8.5)
RMWV3216AGBG-5S2#KC0 FAQ
1.How can I place an order for RMWV3216AGBG-5S2#KC0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMWV3216AGBG-5S2#KC0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMWV3216AGBG-5S2#KC0 reliable?
The price and inventory of RMWV3216AGBG-5S2#KC0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMWV3216AGBG-5S2#KC0 is usually 5 days.
3.What payment methods are accepted for RMWV3216AGBG-5S2#KC0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMWV3216AGBG-5S2#KC0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMWV3216AGBG-5S2#KC0?
RMWV3216AGBG-5S2#KC0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMWV3216AGBG-5S2#KC0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMWV3216AGBG-5S2#KC0?
For technical support, including RMWV3216AGBG-5S2#KC0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMWV3216AGBG-5S2#KC0 requirements.
6.How does Aetrix verify that RMWV3216AGBG-5S2#KC0 is sourced from the original manufacturer or authorized distributors?
All RMWV3216AGBG-5S2#KC0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMWV3216AGBG-5S2#KC0 meets industry standards.
7.What is the process for return or replacement of RMWV3216AGBG-5S2#KC0?
All RMWV3216AGBG-5S2#KC0 units undergo pre-shipment inspection (PSI). If there is an issue with RMWV3216AGBG-5S2#KC0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMWV3216AGBG-5S2#KC0 part is unused and in its original packaging.
Return procedure for RMWV3216AGBG-5S2#KC0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RMWV3216AGBG-5S2#KC0 Tags
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M24C02-WMN6TP
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