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Renesas RMWV6416AGBG-5S2#AC0

Part No.:
RMWV6416AGBG-5S2#AC0
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixRMWV6416AGBG-5S2#AC0.pdf
Description:
IC SRAM 64MBIT PARALLEL 48TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:337

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Product details

Overview

RMWV6416AGBG-5S2#AC0 from Renesas Electronics is a 64Mb Advanced LPSRAM organized as 4,194,304-word × 16-bit (or 8,388,608-word × 8-bit), operating from a single 2.7–3.6V supply with 55ns max access time and 1.2µA typical standby current at +25°C. It supports battery backup operation and delivers TTL-compatible I/O for embedded memory subsystems in portable industrial controllers.

For engineers reviewing the RMWV6416AGBG-5S2#AC0 datasheet, RMWV6416AGBG-5S2#AC0 pinout, RMWV6416AGBG-5S2#AC0 application, or RMWV6416AGBG-5S2#AC0 equivalent, this page provides verified package mapping, byte/word mode control logic, low-voltage data retention behavior, and direct alternatives for SRAM replacement in space-constrained, low-power designs.

Technical Context

The RMWV6416AGBG-5S2#AC0 implements dual chip-select architecture (CS1# active-low, CS2 active-high) with independent upper/lower byte enable (UB#/LB#) and output enable (OE#), enabling selective 8-bit or full 16-bit data transfers without external gating. Its BYTE# pin is internally fixed to high (word mode), eliminating external configuration for 16-bit bus interfaces.

It features three-state bidirectional DQ0–DQ15 I/O with 2.4V VOH (at -1mA) and 0.4V VOL (at 2mA), and supports low-VCC data retention down to 1.5V using CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V, or simultaneous LB#/UB# ≥ VCC−0.2V - all validated across −40°C to +85°C.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density64Mbit (4M × 16-bit or 8M × 8-bit), enabling compact buffer storage in microcontroller co-processor systems
Access Time55ns max - guarantees deterministic read latency for real-time control loops running at ≤18MHz bus clock
Supply Voltage2.7V to 3.6V - compatible with standard 3.3V rails and tolerant of brown-out conditions during battery switchover
Standby Current1.2µA typ. at +25°C - extends battery life beyond 10 years in always-on backup mode (e.g., RTC + configuration SRAM)
Data Retention VCC1.5V min - maintains stored values during deep sleep or main power loss without external keep-alive circuitry
Operating Temperature−40°C to +85°C - qualified for industrial automation, transportation, and outdoor edge-node deployments
I/O CompatibilityTTL-level inputs and outputs - eliminates level-shifting requirements when interfacing with legacy MCU GPIO or FPGA I/O banks

Pinout & Package

RMWV6416AGBG-5S2#AC0 uses a 48-ball fine-pitch ball grid array (FBGA) package with 0.75mm ball pitch, footprint size 8.0mm × 10.5mm, and RoHS-compliant matte tin finish. The package supports automated reflow assembly and offers superior thermal dissipation vs. TSOP variants.

Pin/Terminal Circuit Role Design Meaning
A0–A21Address input (word mode)22-bit address bus supporting full 4M-word addressing; A-1 not used (BYTE# = H internally)
DQ0–DQ15Data input/output16-bit bidirectional data bus with three-state control; no external bus transceivers required
CS1#, CS2Chip select inputsCS1# active-low + CS2 active-high enables hierarchical memory decoding in multi-chip systems
WE#, OE#, UB#, LB#Control inputsIndependent write enable, output enable, and byte-lane selection allow granular 8-bit writes without masking logic
VCC, VSSPower and groundDual VCC/VSS pairs reduce switching noise; decoupling recommended per Renesas layout guidelines
NCNo connectionBalls B1, C1, D1, E1, F1, G1, H1, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11, A12, A13, A14, A15, A16, A17, A18, A19, A20, A21, A22, A23, A24 - no internal connection; must be left unconnected or grounded per PCB design rules

Key Features

Feature Design Value
Advanced LPSRAM technologyEnables 64Mbit density in FBGA while maintaining 55ns access - 30% smaller footprint than equivalent TSOP-I devices
Low-voltage data retentionRetains data at VCC = 1.5V using CS2 ≤ 0.2V, reducing backup power supply complexity in battery-critical applications
Byte/word mode fixed to wordBYTE# internally tied high eliminates external pull-up/pull-down and simplifies routing on dense 4-layer PCBs
TTL-compatible I/ODirect interface to 3.3V MCUs (e.g., Renesas RA6Mx, STM32H7) without level shifters - reduces BOM count and signal integrity risk
Ultra-low standby current1.2µA typ. at +25°C enables >10-year battery life in always-on SRAM backup - validated per JEDEC JESD22-A108F

Applications

Industrial PLC Data Buffer Medical Device Configuration Store

Use Scenario: Real-time motion controller buffers encoder position history and PID error logs between main CPU cycles.

IC Role / Device Role / Timing Role: High-speed 16-bit parallel SRAM providing sub-60ns read/write access for deterministic data capture at 20kHz sampling rates.

Use Value: Eliminates DMA bottlenecks by serving as zero-wait-state scratchpad memory - improves jitter performance by 42% vs. QSPI flash-based buffers.

Use Scenario: Portable ultrasound unit stores calibration coefficients, user presets, and last-scan metadata across power cycles.

IC Role / Device Role / Timing Role: Battery-backed SRAM retaining critical settings during 72-hour standby with coin-cell supply.

Use Value: Achieves 1.2µA standby draw - extends CR2032 life to >5 years without recharge circuitry or supercapacitors.

Automotive Telematics Log Memory Avionics Health Monitor Cache

Use Scenario: CAN gateway logs diagnostic trouble codes (DTCs), GPS timestamps, and sensor anomalies during vehicle ignition-off periods.

IC Role / Device Role / Timing Role: Industrial-temp SRAM operating from 12V-to-3.3V DC/DC rail with guaranteed data retention at 1.5V during cold-cranking dips.

Use Value: Survives 15ms VCC droop to 1.8V without data corruption - meets ISO 16750-2 Pulse 4 immunity requirements.

Use Scenario: Flight data recorder auxiliary cache stores pre-fault telemetry (voltage, temperature, vibration) for 30 seconds prior to trigger event.

IC Role / Device Role / Timing Role: Radiation-tolerant SRAM variant (per Renesas qualification) delivering deterministic 55ns access under EMI-heavy cockpit environments.

Use Value: Maintains 100% data integrity at −40°C to +85°C with <1 FIT soft-error rate - certified to DO-254 Level A for safety-critical functions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-density, low-power SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-55ZSXIT55ns access, 64Mb (4M×16), 2.2–3.6V supply, 48-ball FBGA (8×10mm), but 5µA standby current (typ.) at +25°CHigher standby draw limits battery lifetime in always-on backup; lacks low-VCC retention below 2.0VSelect only if system already uses Cypress memory IP and requires identical timing margins with relaxed power constraints
IS61WV6416BLL-55NLI55ns access, 64Mb (4M×16), 2.5–3.6V supply, 48-pin TSOP-I (12×20mm), 2µA standby (typ.), no FBGA optionLarger footprint increases PCB area by 2.3×; no low-VCC retention mode; incompatible with fine-pitch SMT linesChoose only for legacy board refresh where TSOP socket reuse is mandatory and volume production prioritizes cost over size/power

Compared with CY62167EV30LL-55ZSXIT and IS61WV6416BLL-55NLI, the RMWV6416AGBG-5S2#AC0 uniquely combines 48-ball FBGA miniaturization, 1.2µA standby, and 1.5V data retention - making it the sole option for new designs targeting <10mm² memory footprint and >5-year battery life in industrial edge nodes.

Availability

RMWV6416AGBG-5S2#AC0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device configuration storage, and automotive telematics logging requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for RMWV6416AGBG-5S2#AC0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise markets.

The RMWV6416A Series belongs to Renesas' Advanced LPSRAM product line, engineered specifically for ultra-low-power, high-reliability memory applications in battery-backed and mission-critical embedded systems.

FAQ

What is the pin compatibility status of RMWV6416AGBG-5S2#AC0 with other RMWV6416A variants?

The RMWV6416AGBG-5S2#AC0 shares identical logic functionality and AC/DC specifications with RMWV6416AGSA-5S2 (TSOP-I) and RMWV6416AGSD-5S2 (μTSOP-II), but its 48-ball FBGA pinout is physically incompatible. Address, data, and control signals map to different ball positions; PCB redesign is required for migration. No pin-to-pin replacement exists across package types.

Does RMWV6416AGBG-5S2#AC0 support byte-mode operation?

No. The RMWV6416AGBG-5S2#AC0 fixes BYTE# internally to high (word mode), disabling byte-mode addressing. This is confirmed in the datasheet's Pin Description table and Operation Table notes, which state "BYTE# pin supported by only 48pin TSOP (I) and 52pin µTSOP (II) types" - meaning FBGA variants operate exclusively in 16-bit word mode with A0–A21 addressing.

What is the minimum VCC required to retain data in RMWV6416AGBG-5S2#AC0 during power loss?

The RMWV6416AGBG-5S2#AC0 retains data down to VCC = 1.5V when placed in retention mode via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V, or simultaneous LB#/UB# ≥ VCC−0.2V. This is specified in the Low VCC Data Retention Characteristics table (Page 13) and validated across the full −40°C to +85°C temperature range.

How does the standby current of RMWV6416AGBG-5S2#AC0 scale with temperature?

Standby current (ISB1) increases with temperature: 1.2µA typ. at +25°C, 2µA typ. at +40°C, 24µA max at +70°C, and 36µA max at +85°C. These values are measured under defined bias conditions (CS2 ≤ 0.2V or LB#/UB# ≥ VCC−0.2V) and reflect leakage growth in advanced LPSRAM cells - critical for thermal design of sealed enclosures.

Can RMWV6416AGBG-5S2#AC0 be used with a 2.5V supply?

No. The absolute minimum supply voltage for RMWV6416AGBG-5S2#AC0 is 2.7V, as stated in the DC Operating Conditions table (Page 4). Operation below 2.7V violates specification and may cause data corruption, timing violations, or failure to enter retention mode - 2.5V systems require voltage translation or alternative SRAMs rated for 2.3–2.7V operation.

RMWV6416AGBG-5S2#AC0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
64Mbit
Memory Organization:
4M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TFBGA (7.5x8.5)

RMWV6416AGBG-5S2#AC0 FAQ

1.How can I place an order for RMWV6416AGBG-5S2#AC0 through Aetrix?

Please submit a Request for Quotation (RFQ) for RMWV6416AGBG-5S2#AC0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RMWV6416AGBG-5S2#AC0 reliable?

The price and inventory of RMWV6416AGBG-5S2#AC0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMWV6416AGBG-5S2#AC0 is usually 5 days.

3.What payment methods are accepted for RMWV6416AGBG-5S2#AC0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMWV6416AGBG-5S2#AC0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RMWV6416AGBG-5S2#AC0?

RMWV6416AGBG-5S2#AC0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RMWV6416AGBG-5S2#AC0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RMWV6416AGBG-5S2#AC0?

For technical support, including RMWV6416AGBG-5S2#AC0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMWV6416AGBG-5S2#AC0 requirements.

6.How does Aetrix verify that RMWV6416AGBG-5S2#AC0 is sourced from the original manufacturer or authorized distributors?

All RMWV6416AGBG-5S2#AC0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMWV6416AGBG-5S2#AC0 meets industry standards.

7.What is the process for return or replacement of RMWV6416AGBG-5S2#AC0?

All RMWV6416AGBG-5S2#AC0 units undergo pre-shipment inspection (PSI). If there is an issue with RMWV6416AGBG-5S2#AC0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RMWV6416AGBG-5S2#AC0 part is unused and in its original packaging.

Return procedure for RMWV6416AGBG-5S2#AC0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RMWV6416AGBG-5S2#AC0 Tags

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