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Renesas RMWV6416AGBG-5S2#KC0
- Part No.:
- RMWV6416AGBG-5S2#KC0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
RMWV6416AGBG-5S2#KC0.pdf
- Description:
- IC SRAM 64MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,329
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Product details
Overview
RMWV6416AGBG-5S2#KC0 from Renesas Electronics is a 64Mb advanced low-power static RAM organized as 4,194,304-word × 16-bit (or 8,388,608-word × 8-bit), operating from a single 3.0V supply (2.7–3.6V), with 55ns maximum access time and 1.2µA typical standby current at +25°C. It supports battery backup operation and is used in portable industrial controllers requiring nonvolatile data retention during power loss.
For engineers reviewing the RMWV6416AGBG-5S2#KC0 datasheet, RMWV6416AGBG-5S2#KC0 pinout, RMWV6416AGBG-5S2#KC0 application, or RMWV6416AGBG-5S2#KC0 equivalent, key selection criteria include FBGA-48 package compatibility, byte/word mode flexibility via LB#/UB#, TTL-level interface compliance, and low-voltage data retention down to 1.5V.
Technical Context
This SRAM implements dual chip select (CS1#, CS2) with independent control of upper/lower byte enables (UB#, LB#) and output enable (OE#), enabling precise memory banking and partial-word writes. Its architecture supports both word-mode (16-bit DQ0–DQ15) and byte-mode (DQ0–DQ7 / DQ8–DQ15 with A−1 addressing), with BYTE# internally fixed high in FBGA variants.
The device uses Renesas' Advanced LPSRAM process to achieve sub-1µA standby current while maintaining 55ns read/write cycle timing across −40°C to +85°C. Data retention is guaranteed down to VCC = 1.5V when entering low-power mode via CS2 ≤ 0.2V, CS1# ≥ VCC−0.2V, or simultaneous LB#/UB# ≥ VCC−0.2V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 64 Mbit (4M × 16 or 8M × 8), enabling compact buffer storage for real-time embedded systems |
| Access time | 55 ns max - ensures deterministic timing for 18.2 MHz synchronous bus interfaces |
| Supply voltage | 2.7–3.6 V - compatible with standard 3.3V logic rails and brown-out tolerant operation |
| Standby current | 1.2 µA typ. at +25°C - extends battery life in always-on backup applications beyond 10 years |
| Data retention voltage | 1.5 V min - allows retention during deep sleep or capacitor-backed power failure |
| Operating temperature | −40°C to +85°C - qualified for industrial-grade deployment without derating |
| Package | 48-ball FBGA, 0.75 mm pitch - supports high-density PCB layouts with thermal and signal integrity advantages over TSOP |
Pinout & Package
RMWV6416AGBG-5S2#KC0 is housed in a 48-ball fine-pitch ball grid array (FBGA) package measuring 8.0 mm × 10.5 mm with 0.75 mm ball pitch. The package supports automated placement and offers improved thermal dissipation and signal integrity versus TSOP alternatives.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address inputs | 22-bit address bus supporting full 4M-word addressing in 16-bit mode or 8M-word in byte mode |
| DQ0–DQ15 | Bi-directional data I/O | 16-bit parallel data path; three-state outputs controlled by OE#, CS1#, and CS2 |
| CS1#, CS2 | Chip select inputs | Two-level hierarchical enable: CS1# active-low primary select; CS2 high enables internal buffers and controls retention mode |
| WE#, OE#, LB#, UB# | Control inputs | Write enable, output enable, and byte-select signals allow granular 8-bit or 16-bit read/write operations |
| VCC, VSS | Power and ground | Single 3V supply domain; decoupling required per Renesas layout guidelines for noise immunity |
| NC | No connection | Three unconnected balls (B1, E1, H1) - must be left unpopulated on PCB |
Key Features
| Feature | Design Value |
|---|---|
| Low-power standby | 1.2 µA typical current at +25°C enables multi-year battery backup without external supervision |
| TTL-compatible I/O | All pins meet VIH ≥ 2.2 V and VIL ≤ 0.6 V - eliminates level-shifting in 3.3V microcontroller interfaces |
| Flexible data width | Hardware-selectable 8-bit or 16-bit operation via LB#/UB# - simplifies integration with mixed-width processors |
| Multi-mode data retention | Enters retention at VCC ≥ 1.5 V using CS2 ≤ 0.2 V, CS1# ≥ VCC−0.2 V, or LB#/UB# ≥ VCC−0.2 V - three robust entry paths |
| High-speed timing | 55 ns tRC and tWC with 25 ns tOE - meets timing closure for ARM Cortex-M7/M33 buses running at 18+ MHz |
Applications
| Industrial PLC Data Buffer | Medical Device Event Log Storage |
|---|---|
|
Use Scenario: Real-time logging of sensor readings and alarm events in programmable logic controllers with intermittent power. IC Role / Device Role / Timing Role: High-reliability, low-leakage SRAM acting as volatile but battery-backed working memory for last-known-state recovery. Use Value: 1.2 µA standby current extends coin-cell life beyond 10 years; 55 ns access supports deterministic scan-cycle execution. |
Use Scenario: Storing critical diagnostic timestamps and error codes in portable ultrasound or infusion pumps during power interruption. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding time-critical event history until safe transfer to flash or host. Use Value: Guaranteed data retention at 1.5 V allows seamless handoff during brownout; FBGA footprint minimizes board area in handheld enclosures. |
| Automotive Telematics Black Box | Test Equipment Configuration Cache |
|
Use Scenario: Capturing CAN bus diagnostics and GPS coordinates during vehicle ignition cycles and unexpected shutdowns. IC Role / Device Role / Timing Role: Fast-access, low-power SRAM buffering transient telemetry before persistent storage. Use Value: −40°C to +85°C rating ensures operation under hood conditions; dual CS control enables selective subsystem isolation. |
Use Scenario: Caching instrument calibration tables and user-defined test sequences in automated bench testers. IC Role / Device Role / Timing Role: High-speed scratchpad memory reducing boot latency and improving reconfiguration responsiveness. Use Value: 48-ball FBGA enables dense routing in multi-layer test head PCBs; 55 ns access accelerates pattern loading. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-55ZSXIT | 64Mb PSRAM (pseudo-static), 55 ns access, 3.3V only, 48-TSOP I package | Lacks true static retention below 2.7V; requires refresh circuitry; no FBGA option | Choose for legacy TSOP-based designs where refresh overhead is acceptable and VCC never drops below 2.7V |
| IS61WV6416BLL-55NLI | 64Mb async SRAM, 55 ns access, 2.5–3.6V, 48-TSOP I or 48-FBGA (0.8 mm pitch) | Slightly higher ISB (2 µA typ.), wider FBGA pitch (0.8 mm vs. 0.75 mm), no low-VCC retention spec below 2.0V | Prefer when board already uses 0.8 mm pitch FBGA footprints or when marginally higher standby is acceptable |
Compared with CY62167EV30LL-55ZSXIT and IS61WV6416BLL-55NLI, RMWV6416AGBG-5S2#KC0 uniquely delivers verified 1.5V data retention, 0.75 mm FBGA density, and 1.2 µA standby - making it optimal for space-constrained, battery-sensitive industrial and medical edge devices.
Availability
RMWV6416AGBG-5S2#KC0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device event logging, and automotive telematics black box applications requiring stable component supply, long-lifecycle support, and guaranteed low-power performance.
Supply support for RMWV6416AGBG-5S2#KC0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The RMWV6416A Series belongs to Renesas' Advanced LPSRAM product line, engineered specifically for ultra-low-power, high-reliability embedded memory applications where battery backup, extended temperature operation, and compact packaging are critical.
FAQ
What is the minimum supply voltage for data retention in RMWV6416AGBG-5S2#KC0?
The RMWV6416AGBG-5S2#KC0 guarantees data retention down to 1.5 V when entering retention mode via CS2 ≤ 0.2 V, CS1# ≥ VCC−0.2 V, or simultaneous LB#/UB# ≥ VCC−0.2 V. This specification is validated across the full −40°C to +85°C temperature range and enables reliable operation during capacitor-backed brownout scenarios. Retention current remains below 36 µA even at +85°C.
Does RMWV6416AGBG-5S2#KC0 support byte-mode addressing like the TSOP variants?
Yes, RMWV6416AGBG-5S2#KC0 supports byte-mode operation (8-bit data width) using A−1 addressing and LB#/UB# control, identical to the TSOP versions. However, the BYTE# pin is not bonded out in the 48-ball FBGA package - its function is internally fixed to high, enabling automatic word-mode behavior unless LB# or UB# is asserted independently.
What is the meaning of "5S2" in RMWV6416AGBG-5S2#KC0?
The "5S2" suffix in RMWV6416AGBG-5S2#KC0 denotes a 55 ns maximum access time grade and industrial temperature range (−40°C to +85°C). It also indicates compliance with Renesas' standard reliability screening and moisture sensitivity level 3 (MSL3) handling requirements per J-STD-020.
Can RMWV6416AGBG-5S2#KC0 be used as a direct replacement for RMWV6416AGSA-5S2 in an existing TSOP design?
No - RMWV6416AGBG-5S2#KC0 uses a 48-ball FBGA package with 0.75 mm pitch and different pinout than the 48-pin TSOP (I) RMWV6416AGSA-5S2. While electrical functionality and timing are identical, PCB redesign and layout validation are required due to mechanical incompatibility and ball-to-pin mapping differences.
How does the dual chip select (CS1# and CS2) architecture improve system design flexibility with RMWV6416AGBG-5S2#KC0?
The dual chip select architecture in RMWV6416AGBG-5S2#KC0 enables hierarchical memory management: CS1# serves as primary enable, while CS2 controls internal buffer activation and determines data retention entry path. This allows independent power gating of peripheral logic while preserving SRAM state, reduces address decode complexity in multi-bank systems, and supports selective subsystem isolation during low-power modes.
RMWV6416AGBG-5S2#KC0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 64Mbit
- Memory Organization:
- 4M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (7.5x8.5)
RMWV6416AGBG-5S2#KC0 FAQ
1.How can I place an order for RMWV6416AGBG-5S2#KC0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMWV6416AGBG-5S2#KC0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMWV6416AGBG-5S2#KC0 reliable?
The price and inventory of RMWV6416AGBG-5S2#KC0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMWV6416AGBG-5S2#KC0 is usually 5 days.
3.What payment methods are accepted for RMWV6416AGBG-5S2#KC0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMWV6416AGBG-5S2#KC0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMWV6416AGBG-5S2#KC0?
RMWV6416AGBG-5S2#KC0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMWV6416AGBG-5S2#KC0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMWV6416AGBG-5S2#KC0?
For technical support, including RMWV6416AGBG-5S2#KC0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMWV6416AGBG-5S2#KC0 requirements.
6.How does Aetrix verify that RMWV6416AGBG-5S2#KC0 is sourced from the original manufacturer or authorized distributors?
All RMWV6416AGBG-5S2#KC0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMWV6416AGBG-5S2#KC0 meets industry standards.
7.What is the process for return or replacement of RMWV6416AGBG-5S2#KC0?
All RMWV6416AGBG-5S2#KC0 units undergo pre-shipment inspection (PSI). If there is an issue with RMWV6416AGBG-5S2#KC0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMWV6416AGBG-5S2#KC0 part is unused and in its original packaging.
Return procedure for RMWV6416AGBG-5S2#KC0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RMWV6416AGBG-5S2#KC0 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C08C-STUM-T
Microchip Technology
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