Renesas RMWV6416AGSD-5S2#AA0

Overview

RMWV6416AGSD-5S2#AA0 from Renesas Electronics is a 64Mb Advanced LPSRAM organized as 4,194,304-word × 16-bit (or 8,388,608-word × 8-bit), fabricated using high-performance low-power SRAM technology. It operates from a single 2.7–3.6V supply, delivers 55ns max access time, consumes only 1.2µA typical standby current, and supports battery backup operation in industrial temperature range (−40°C to +85°C). It is used in real-time data buffering for portable instrumentation and embedded control systems requiring non-volatile retention during power loss.

For engineers reviewing the RMWV6416AGSD-5S2#AA0 datasheet, RMWV6416AGSD-5S2#AA0 pinout, RMWV6416AGSD-5S2#AA0 application, or RMWV6416AGSD-5S2#AA0 equivalent, key selection criteria include byte/word mode flexibility via BYTE#, dual chip select architecture (CS1#/CS2), low-voltage data retention down to 1.5V, and µTSOP (II) package compatibility with space-constrained PCB layouts.

Technical Context

The RMWV6416AGSD-5S2#AA0 implements a dual-bank 32Mb SRAM architecture with independent column decoders and shared address buffers, enabling concurrent word- and byte-access modes controlled by BYTE#, UB#, and LB# signals. Its control logic supports four distinct write configurations-word, upper/lower byte, and byte-mode-with precise timing windows validated across −40°C to +85°C.

It features three-state bidirectional DQ0–DQ15 I/Os compatible with TTL voltage levels, integrated output enable (OE#) and write enable (WE#) with sub-20ns high-Z transitions, and CS2-controlled data retention mode that maintains memory contents at VCC as low as 1.5V without external circuitry.

Key Specifications

Pinout & Package

RMWV6416AGSD-5S2#AA0 uses a 52-pin plastic µTSOP (II) package with 0.5mm lead pitch, optimized for automated assembly and thermal dissipation in high-density designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61WV6416BLL-10MLI and AS6C6416-55TIN, the RMWV6416AGSD-5S2#AA0 uniquely combines 55ns access, µTSOP (II) footprint, BYTE#-enabled mode switching, and triple-method data retention - making it the only option supporting both space-constrained layouts and robust battery-backed operation in industrial environments.

Availability

RMWV6416AGSD-5S2#AA0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical monitoring, automotive body control modules, and smart energy metering requiring stable component supply across long product lifecycles.

Supply support for RMWV6416AGSD-5S2#AA0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The RMWV6416A Series was designed to deliver high-density, low-power static RAM for battery-critical and thermally demanding embedded systems - emphasizing data retention integrity, pin efficiency, and industrial-grade reliability.

FAQ

What is the maximum access time specification for RMWV6416AGSD-5S2#AA0?

The RMWV6416AGSD-5S2#AA0 has a maximum access time of 55ns across its full operating temperature range (−40°C to +85°C) and supply voltage range (2.7V to 3.6V). This value is measured from address valid to data valid under standard test conditions (VIH = 2.4V, VIL = 0.4V, load = 30pF), and applies to both word and byte modes. The 55ns rating ensures deterministic timing for real-time firmware execution and DMA-driven data capture in industrial controllers.

Does RMWV6416AGSD-5S2#AA0 support true byte-mode operation?

Yes, RMWV6416AGSD-5S2#AA0 supports true 8-bit byte-mode operation via the BYTE# pin. When BYTE# is driven low, the device maps A-1 as an additional address bit, enabling 8,388,608 × 8-bit organization. In this mode, LB# and UB# function as byte write enables, allowing independent 8-bit writes to DQ0–DQ7 and DQ8–DQ15. This capability is confirmed in the device's Operation Table and Timing Waveforms on pages 4–8 of R10DS0278EJ0200 Rev.2.00.

How does RMWV6416AGSD-5S2#AA0 achieve data retention during power loss?

RMWV6416AGSD-5S2#AA0 supports data retention at VCC as low as 1.5V using three independent control methods: CS1# ≥ VCC−0.2V, CS2 ≤ 0.2V, or LB# = UB# ≥ VCC−0.2V. Each method places the SRAM array into ultra-low-current retention mode (1.2µA typ. at 25°C), preserving stored data without external circuitry. This behavior is validated per Low VCC Data Retention Characteristics on page 13 of R10DS0278EJ0200 Rev.2.00 and eliminates the need for external supervisors or backup capacitors.

What package type is used by RMWV6416AGSD-5S2#AA0?

RMWV6416AGSD-5S2#AA0 uses a 52-pin plastic µTSOP (II) package measuring 10.79mm × 10.49mm with 0.5mm lead pitch. This package is explicitly assigned to the RMWV6416AGSD-5S2 variant in the "Part Name Information" table on page 1 of R10DS0278EJ0200 Rev.2.00. It provides superior thermal performance and solder joint reliability compared to standard TSOP-I, and is compatible with standard SMT reflow profiles.

Is RMWV6416AGSD-5S2#AA0 compatible with TTL-level interfaces?

Yes, RMWV6416AGSD-5S2#AA0 is fully TTL-compatible: all inputs accept VIH ≥ 2.2V and VIL ≤ 0.6V, and outputs drive VOH ≥ 2.4V (at IOH = −1mA) and VOL ≤ 0.4V (at IOL = 2mA). This allows direct connection to legacy 3.3V microcontrollers, FPGAs, and ASICs without level-shifting components. The compatibility is specified in the DC Operating Conditions table (page 4) and DC Characteristics table (page 5) of R10DS0278EJ0200 Rev.2.00.