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Renesas RMWV6416AGSD-5S2#HA0
- Part No.:
- RMWV6416AGSD-5S2#HA0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 52-TFSOP (0.350", 8.89mm Width)
- Datasheet:
-
RMWV6416AGSD-5S2#HA0.pdf
- Description:
- IC SRAM 64MBIT PAR 52TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,993
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Product details
Overview
RMWV6416AGSD-5S2 from Renesas Electronics is a 64Mb Advanced LPSRAM organized as 4,194,304-word × 16-bit (or 8,388,608-word × 8-bit), fabricated using high-performance low-power SRAM technology. It operates from a single 3V supply (2.7–3.6V), delivers 55ns max access time, draws only 1.2µA typical standby current, and supports battery backup operation in industrial temperature range (−40°C to +85°C). It is used in embedded systems requiring non-volatile data retention during power loss.
For engineers reviewing the RMWV6416AGSD-5S2 datasheet, RMWV6416AGSD-5S2 pinout, RMWV6416AGSD-5S2 application, or RMWV6416AGSD-5S2 equivalent, key selection criteria include byte/word mode flexibility via BYTE#, dual chip select architecture (CS1#/CS2), ultra-low ISB1 standby current at temperature, TTL-compatible I/O, and µTSOP (II) package compatibility with space-constrained PCB layouts.
Technical Context
The RMWV6416AGSD-5S2 implements a dual-bank 32Mb × 2 memory array with independent column decoding for x8/x16 configurable data width. Its control logic supports three distinct operational modes-word, byte, and upper/lower byte write-enabled by coordinated assertion of CS1#, CS2, WE#, LB#, UB#, and BYTE#.
It features two independent chip select inputs (CS1# active-low, CS2 active-high) enabling hierarchical memory mapping, and includes dedicated byte-select pins (LB#, UB#) plus BYTE# to configure address interpretation (A−1 vs A0–A21) and DQ bus partitioning. Standby entry is triggered by CS2 low or CS1# high or simultaneous LB#/UB# high under defined voltage thresholds.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 64 Mbit (4M × 16 or 8M × 8), enabling compact code/data storage in resource-limited microcontroller subsystems |
| Access Time | 55 ns max - ensures timing compliance with 18.2 MHz synchronous bus interfaces without wait states |
| Supply Voltage | 2.7 V to 3.6 V - compatible with standard 3.3V logic rails and tolerant of brown-out conditions down to 2.7V |
| Standby Current | 1.2 µA typ. at +25°C - enables multi-year battery backup in RTC or SRAM-cached firmware applications |
| Operating Temperature | −40°C to +85°C - qualified for industrial-grade deployment in automotive body controllers and factory automation nodes |
| Data Retention VCC | 1.5 V min - maintains stored data during deep sleep or capacitor-backed power failure scenarios |
| Package | 52-pin µTSOP (II), 10.79 mm × 10.49 mm - provides fine-pitch surface-mount compatibility while easing thermal dissipation vs. TSOP-I |
Pinout & Package
RMWV6416AGSD-5S2 uses a 52-pin plastic µTSOP (II) package with 0.5 mm pitch, optimized for high-density PCB layouts and automated assembly. Pin numbering follows standard counter-clockwise orientation starting from the index mark.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A21 | Address input (word mode) | 22-bit address bus supporting full 4M-word addressing; A−1 used only in byte mode |
| DQ0–DQ15 | Data input/output | 16-bit bidirectional data bus with three-state output control; shared I/O reduces pin count vs. separate DQ/DI |
| CS1#, CS2 | Chip select inputs | CS1# (active-low) and CS2 (active-high) enable hierarchical decode; both must be asserted for read/write activation |
| WE#, OE#, LB#, UB# | Control inputs | WE# initiates writes; OE# enables outputs; LB#/UB# select byte lanes; all TTL-compatible (VIH ≥ 2.2V, VIL ≤ 0.6V) |
| BYTE# | Mode configuration | Selects word (BYTE# ≥ VCC−0.2V) or byte (BYTE# ≤ 0.2V) addressing; required for A−1 usage and byte-mode operation |
| VCC, VSS | Power terminals | Single 3V supply rail; decoupling near package essential due to 38 mA max operating current and fast edge rates |
Key Features
| Feature | Design Value |
|---|---|
| Battery backup support | Enables data retention at VCC as low as 1.5 V with ISB1 ≤ 36 µA at +85°C, eliminating need for external backup batteries in many designs |
| Byte/word mode flexibility | BYTE# pin allows runtime reconfiguration between 16-bit word and 8-bit byte access, simplifying interface to 8-bit microcontrollers or legacy peripherals |
| Ultra-low standby power | 1.2 µA typical ISB1 at +25°C meets stringent energy budgets for always-on sensor nodes and IoT endpoints |
| TTL-compatible I/O | All inputs and outputs meet TTL voltage thresholds (VIH ≥ 2.2 V, VOL ≤ 0.4 V), enabling direct connection to 3.3V microcontrollers without level shifters |
| Dual chip select architecture | CS1# and CS2 allow cascaded memory mapping - e.g., CS2 enables bank selection while CS1# gates individual device access within bank |
Applications
| Industrial PLC Data Buffer | Automotive Body Control Module |
|---|---|
Use Scenario: Temporary storage of I/O scan data and fault logs during cyclic PLC scan execution. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM buffer interfaced directly to ARM Cortex-M7 MCU's external bus interface. Use Value: 55 ns access time eliminates wait states; 1.2 µA standby current extends backup runtime during main power interruption. |
Use Scenario: Storing calibrated sensor offsets and EEPROM-emulated configuration parameters in door module ECUs. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding critical settings across ignition cycles, backed by coin cell during main power loss. Use Value: 1.5 V data retention threshold ensures reliable holdover even as backup voltage sags; −40°C to +85°C rating matches under-hood requirements. |
| Medical Infusion Pump Controller | Network Edge Router Packet Buffer |
Use Scenario: Real-time buffering of dosage history and alarm event timestamps with deterministic latency. IC Role / Device Role / Timing Role: Safety-critical SRAM providing fail-safe data capture path independent of main application processor. Use Value: Dual CS architecture isolates pump controller access from diagnostic subsystem; byte-mode support simplifies integration with 8-bit safety monitor MCU. |
Use Scenario: Temporary frame storage in Layer 2 switching ASIC subsystems requiring burst-access memory for QoS queue management. IC Role / Device Role / Timing Role: Low-power, high-bandwidth SRAM serving as packet descriptor cache adjacent to traffic manager logic. Use Value: 38 mA max ICC1 supports sustained 18.2 MHz bus throughput; µTSOP (II) footprint minimizes trace inductance for signal integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-density low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV6416BLL-10MLI | 10 ns faster access (45 ns max); 3.3 V only (3.135–3.465 V); no BYTE# pin; 48-pin TSOP-I package | Lacks byte/word mode flexibility and extended voltage range; requires tighter VCC regulation | Preferred where speed >5 MHz bus timing margin is critical and system VCC is tightly regulated |
| AS6C6416-55ZIN | Same 55 ns access; 2.7–3.6 V supply; 48-ball FBGA package; no BYTE# support; higher ISB (5 µA typ.) | Smaller footprint but no byte-mode capability; less suitable for mixed 8/16-bit bus environments | Chosen when board space is constrained and FBGA assembly infrastructure exists; not drop-in for µTSOP layout |
Compared with RMWV6416AGSD-5S2, IS61WV6416BLL-10MLI trades voltage flexibility and byte-mode configurability for raw speed, while AS6C6416-55ZIN sacrifices mode versatility and ultra-low standby for compact packaging - making RMWV6416AGSD-5S2 optimal for thermally demanding, battery-backed, mixed-bus industrial designs.
Availability
RMWV6416AGSD-5S2 is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive body control modules, and medical infusion pump controllers requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.
Supply support for RMWV6416AGSD-5S2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
The RMWV6416A Series was designed specifically for battery-backed, low-power embedded systems needing reliable static RAM with flexible bus interface options and extended temperature operation.
FAQ
What is the minimum supply voltage required for data retention in RMWV6416AGSD-5S2?
The RMWV6416AGSD-5S2 guarantees data retention down to 1.5 V on VCC when entering standby via CS2 low, CS1# high, or LB#/UB# high assertion. This threshold is validated across the full −40°C to +85°C temperature range and enables robust operation during brown-out or capacitor-based backup scenarios without external supervision circuitry.
Does RMWV6416AGSD-5S2 support both 8-bit and 16-bit data bus configurations?
Yes, RMWV6416AGSD-5S2 supports both configurations via the BYTE# pin: when BYTE# ≥ VCC−0.2V, it operates in 16-bit word mode (A0–A21, DQ0–DQ15); when BYTE# ≤ 0.2V, it enters 8-bit byte mode (A−1–A21, DQ0–DQ7). This eliminates need for external multiplexing or bus-width adaptation logic in mixed-architecture systems.
What is the function of the dual chip select signals (CS1# and CS2) in RMWV6416AGSD-5S2?
CS1# (active-low) and CS2 (active-high) provide hierarchical chip enable control: CS2 acts as a master bank enable, while CS1# serves as a per-device select within that bank. Both must be asserted simultaneously for read/write operations, allowing scalable memory expansion with minimal address decoder complexity and reduced contention on shared data buses.
How does RMWV6416AGSD-5S2 achieve ultra-low standby current of 1.2 µA?
The RMWV6416AGSD-5S2 achieves 1.2 µA typical standby current (ISB1) through Renesas' Advanced LPSRAM process, which minimizes subthreshold leakage and employs dynamic power gating on internal buffers (address, WE#, OE#, LB#/UB#, DQ) when CS2 is low or CS1# is high. This design eliminates need for external power switches in battery-critical applications.
Is RMWV6416AGSD-5S2 pin-compatible with other members of the RMWV6416A Series?
No, RMWV6416AGSD-5S2 is not pin-compatible with RMWV6416AGSA-5S2 (48-pin TSOP-I) or RMWV6416AGBG-5S2 (48-ball FBGA). The 52-pin µTSOP (II) package has unique pin count, pitch, and layout - including dedicated NC pins and relocated control signals - requiring distinct PCB footprints and routing strategies.
RMWV6416AGSD-5S2#HA0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 52-TFSOP (0.350", 8.89mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 64Mbit
- Memory Organization:
- 8M x 8, 4M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 52-TSOP II
RMWV6416AGSD-5S2#HA0 FAQ
1.How can I place an order for RMWV6416AGSD-5S2#HA0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RMWV6416AGSD-5S2#HA0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RMWV6416AGSD-5S2#HA0 reliable?
The price and inventory of RMWV6416AGSD-5S2#HA0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RMWV6416AGSD-5S2#HA0 is usually 5 days.
3.What payment methods are accepted for RMWV6416AGSD-5S2#HA0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RMWV6416AGSD-5S2#HA0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RMWV6416AGSD-5S2#HA0?
RMWV6416AGSD-5S2#HA0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RMWV6416AGSD-5S2#HA0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RMWV6416AGSD-5S2#HA0?
For technical support, including RMWV6416AGSD-5S2#HA0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RMWV6416AGSD-5S2#HA0 requirements.
6.How does Aetrix verify that RMWV6416AGSD-5S2#HA0 is sourced from the original manufacturer or authorized distributors?
All RMWV6416AGSD-5S2#HA0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RMWV6416AGSD-5S2#HA0 meets industry standards.
7.What is the process for return or replacement of RMWV6416AGSD-5S2#HA0?
All RMWV6416AGSD-5S2#HA0 units undergo pre-shipment inspection (PSI). If there is an issue with RMWV6416AGSD-5S2#HA0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RMWV6416AGSD-5S2#HA0 part is unused and in its original packaging.
Return procedure for RMWV6416AGSD-5S2#HA0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RMWV6416AGSD-5S2#HA0 Tags
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