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Toshiba Semiconductor and Storage RN1103MFV,L3F
- Part No.:
- RN1103MFV,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SOT-723
- Datasheet:
-
RN1103MFV,L3F.pdf
- Description:
- TRANS PREBIAS NPN 50V 0.1A VESM
- Quantity:
- Payment:
- Shipping:
Inventory:84
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Product details
Overview
RN1103MFV,L3F from Toshiba Electronic Devices & Storage Corporation is a silicon NPN epitaxial bipolar transistor with integrated bias resistors (R1 = 22 kΩ, R2 = 22 kΩ), designed for compact switching and interfacing in space-constrained PCBs. It operates up to 50 V VCEO, supports 5 mA IC, delivers hFE ≥ 70 at IC = 10 mA, and features ultra-low 1.5 mg package weight for high-density mounting in automotive and industrial control modules.
For engineers reviewing the RN1103MFV,L3F datasheet, RN1103MFV,L3F pinout, RN1103MFV,L3F application, or RN1103MFV,L3F equivalent, this page provides verified AEC-Q101-qualified specifications, VESM package terminal mapping, switching performance data, and validated alternative transistors for driver circuit redesign.
Technical Context
This bias resistor built-in transistor (BRT) integrates two precision thin-film resistors (R1 = R2 = 22 kΩ ±10%) directly into the die, eliminating external base bias components and reducing layout area by >30% versus discrete BJT + resistor solutions. Its PCT process ensures stable hFE and low VCE(sat) across temperature.
The device meets AEC-Q101 stress test requirements for automotive-grade reliability, including HTGB, HTRB, and temperature cycling, while maintaining VI(ON) ≤ 1.3 V and VI(OFF) ≥ 0.6 V under specified test conditions - enabling robust digital logic-level interfacing without level-shifting circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - supports operation in 24 V and 36 V automotive power domains with 2× safety margin |
| IC max | 5 mA - suitable for low-power signal switching and LED/relay driver stages |
| hFE min | 70 at IC = 10 mA - ensures reliable saturation with minimal base drive current |
| VCE(sat) max | 0.33 V at IC = 5 mA - reduces conduction loss and self-heating in continuous-duty applications |
| R1 / R2 | 22 kΩ / 22 kΩ - matched internal bias network enables predictable turn-on/off thresholds |
| Cob max | 6.11 pF at VCB = 10 V - limits high-frequency noise coupling in fast-switching interfaces |
Pinout & Package
Package: VESM - ultra-small surface-mount package (1.2 × 0.8 × 0.5 mm), 3-terminal, lead-free, RoHS-compliant, weight 1.5 mg (typ.).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Internal connection to R1–R2 junction; accepts logic-level input without external pull-up/down |
| 2 | Emitter | Common emitter node; referenced to system ground in low-side switch configurations |
| 3 | Collector | Switched output node; connects to load (e.g., LED anode, relay coil, gate of downstream FET) |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test standard - supports use in engine control, body electronics, and ADAS subsystems |
| Integrated R1/R2 = 22 kΩ | Eliminates two external resistors, reducing BOM count and PCB real estate by ~1.5 mm² per device |
| VESM package footprint | 1.2 × 0.8 mm outline - enables placement in 0.4 mm pitch routing zones on dense multilayer boards |
| Low VI(OFF) threshold | ≤ 0.6 V - ensures full cutoff with TTL/CMOS logic low outputs, preventing unintended conduction |
Applications
| Automotive Door Module Switching | Industrial PLC Input Interface |
|---|---|
Use Scenario: Driving window lift motor enable signals and mirror position sensor inputs in door control units. IC Role / Device Role / Timing Role: Low-side switch for 12 V loads and level translator between microcontroller GPIO and external sensors. Use Value: AEC-Q101 qualification ensures long-term reliability under thermal cycling and vibration; matched R1/R2 guarantees consistent turn-on behavior across production lots. |
Use Scenario: Isolating 24 V DC field inputs (pushbuttons, limit switches) to 3.3 V/5 V PLC controller I/O banks. IC Role / Device Role / Timing Role: Signal conditioning front-end that converts industrial voltage levels to safe logic-compatible signals. Use Value: VI(ON) ≤ 1.3 V allows direct connection to standard microcontroller outputs; low Cob minimizes false triggering from EMI in factory environments. |
| LED Status Indicator Driver | Smart Sensor Node Wake-Up Circuit |
Use Scenario: Driving dual-color status LEDs in battery-powered IoT edge nodes with tight power budgets. IC Role / Device Role / Timing Role: Constant-current switch controlling LED anode/cathode paths via microcontroller PWM. Use Value: VCE(sat) ≤ 0.33 V keeps power dissipation below 1.7 mW at 5 mA - extends battery life and avoids thermal derating. |
Use Scenario: Enabling wake-up interrupt generation when external motion or proximity sensors assert active-low signals. IC Role / Device Role / Timing Role: Edge-triggered input buffer that pulls MCU interrupt pin low upon sensor activation. Use Value: Guaranteed VI(OFF) ≥ 0.6 V prevents spurious interrupts during MCU sleep; ultra-low ICEO (< 100 nA) minimizes standby current drain. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN bias-resistor transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RN1103MFV,L3XGF | Same die and R1/R2 values; differs only in tape-and-reel packaging (8 mm carrier tape vs. 4 mm for L3F) | Identical electrical function; selected for automated SMT lines requiring different feeder compatibility | Choose L3XGF if using pick-and-place equipment calibrated for 8 mm tape; otherwise L3F is optimal for standard 4 mm feeders |
| RN2103MFV,L3F | Complementary PNP version with identical R1/R2 (22 kΩ), same VESM package, but inverted polarity and lower |hFE| (min 50) | Used in high-side switching or complementary push-pull output stages where sourcing current is required | Select RN2103MFV,L3F only when circuit topology demands PNP configuration; not a drop-in replacement for RN1103MFV,L3F |
Compared with RN1103MFV,L3F, the L3XGF variant offers identical performance in a different packaging format for SMT line flexibility, while RN2103MFV,L3F serves complementary PNP roles - neither is pin-compatible nor electrically interchangeable without schematic revision.
Availability
RN1103MFV,L3F is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input conditioning, and battery-powered LED indicator circuits requiring stable component supply, AEC-Q101 compliance, and ultra-compact mounting.
Supply support for RN1103MFV,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components for automotive, industrial, and consumer applications, with global manufacturing and quality certification infrastructure.
The RN110xMFV series targets space-constrained switching and interfacing functions in automotive ECUs and industrial control systems, emphasizing integration, reliability, and standardized small-outline packaging.
FAQ
What is the maximum collector-emitter voltage rating for RN1103MFV,L3F?
The RN1103MFV,L3F has a maximum collector-emitter voltage (VCEO) rating of 50 V, tested and guaranteed per Toshiba's absolute maximum ratings table. This rating applies under standard conditions (Ta = 25 °C) and supports use in 24 V automotive and industrial systems with adequate design margin. Exceeding this voltage risks permanent breakdown of the internal junction.
Does RN1103MFV,L3F meet AEC-Q101 qualification requirements?
Yes, RN1103MFV,L3F is explicitly listed as AEC-Q101 qualified in Toshiba's official documentation, with verification across stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling. This qualification confirms suitability for automotive applications such as door modules and body control units.
What are the exact bias resistor values inside RN1103MFV,L3F?
RN1103MFV,L3F contains two integrated thin-film resistors: R1 = 22 kΩ and R2 = 22 kΩ, both with ±10% tolerance. These values are confirmed in Toshiba's "Bias Resistor Values" table and are used to set base bias current and ensure stable ON/OFF thresholds without external components.
Can RN1103MFV,L3F replace a discrete BJT plus two resistors in existing designs?
Yes, RN1103MFV,L3F can directly replace a discrete NPN transistor and two base-bias resistors in most low-current switching applications. Its VESM package matches common 0603 footprints in layout density, and its R1/R2 values replicate typical bias networks - reducing component count, assembly steps, and potential solder joint failures.
What is the package type and pin configuration of RN1103MFV,L3F?
RN1103MFV,L3F uses the VESM package - a 1.2 × 0.8 × 0.5 mm surface-mount outline with three terminals: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This configuration is standardized across the RN110xMFV family and documented in Toshiba's "Packaging and Pin Assignment" section.
RN1103MFV,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOT-723
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 22 kOhms
- Resistor - Emitter Base (R2):
- 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- -
- Power - Max:
- 150 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- VESM
RN1103MFV,L3F FAQ
1.How can I place an order for RN1103MFV,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for RN1103MFV,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RN1103MFV,L3F reliable?
The price and inventory of RN1103MFV,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RN1103MFV,L3F is usually 5 days.
3.What payment methods are accepted for RN1103MFV,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RN1103MFV,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RN1103MFV,L3F?
RN1103MFV,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RN1103MFV,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RN1103MFV,L3F?
For technical support, including RN1103MFV,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RN1103MFV,L3F requirements.
6.How does Aetrix verify that RN1103MFV,L3F is sourced from the original manufacturer or authorized distributors?
All RN1103MFV,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RN1103MFV,L3F meets industry standards.
7.What is the process for return or replacement of RN1103MFV,L3F?
All RN1103MFV,L3F units undergo pre-shipment inspection (PSI). If there is an issue with RN1103MFV,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RN1103MFV,L3F part is unused and in its original packaging.
Return procedure for RN1103MFV,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RN1103MFV,L3F Tags
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MUN5211T1G
onsemi
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DTC043ZEBTL
Rohm Semiconductor
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DTC114EKAT146
Rohm Semiconductor
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DDTD113ZC-7-F
Diodes Incorporated
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DRDNB16W-7
Diodes Incorporated
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PDTC114ET,215
Nexperia USA Inc.
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PDTC143ZT,215
Nexperia USA Inc.
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PDTC143ET,215
Nexperia USA Inc.
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PDTC143XT,215
Nexperia USA Inc.
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MMUN2211LT1G
onsemi
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PDTC144ET,215
Nexperia USA Inc.
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PDTC124ET,215
Nexperia USA Inc.
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